BAT54C [FORMOSA]

Surface Mount Schottky Diode - Silicon epitaxial planar type; 表面贴装肖特基二极管 - 硅外延平面型
BAT54C
型号: BAT54C
厂家: FORMOSA MS    FORMOSA MS
描述:

Surface Mount Schottky Diode - Silicon epitaxial planar type
表面贴装肖特基二极管 - 硅外延平面型

肖特基二极管 光电二极管
文件: 总2页 (文件大小:89K)
中文:  中文翻译
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Surface Mount Schottky Diode  
Formosa MS  
BAT54 / A / C / S  
Silicon epitaxial planar type  
Features  
SOT-23  
Small surface mounting type  
High reliability  
High speed ( trr < 5 ns )  
(B)  
(A)  
(C)  
Mechanical data  
0.055 (1.40)  
0.047 (1.20)  
0.028 (0.70)  
0.020 (0.50)  
0.102 (2.60)  
0.094 (2.40)  
Case : SOT-23  
Terminals : Solder plated, solderable per MIL-STD-750,  
Method 2026  
R 0.05  
(0.002)  
0.045 (1.15)  
0.033 (0.85)  
Mounting Position : Any  
Dimensions in inches and (millimeters)  
Marking Code  
BAT54  
KL1  
BAT54A  
KL2  
BAT54C  
KL3  
BAT54S  
KL4  
A
B
A
B
A
B
A
B
C
C
C
C
o
MAXIMUM RATINGS (AT TA=25 C unless otherwise noted)  
PARAMETER  
Repetitive peak reverse voltage  
Reverse voltage  
CONDITIONS  
Symbol  
VRRM  
VR  
MIN.  
TYP.  
MAX.  
30  
UNIT  
V
30  
V
Peak forward surge current  
Repetitive peak forward current  
Forward current  
tp < 10 ms  
tp < 1 s  
IFSM  
IFRM  
IF  
600  
300  
200  
125  
+150  
mA  
mA  
mA  
o
Junction temperature  
Tj  
C
o
Storage temperature  
TSTG  
-55  
C
o
ELECTRICAL CHARACTERISTICS (AT TA=25 C unless otherwise noted)  
PARAMETER  
CONDITIONS  
Symbol  
VF  
MIN.  
TYP.  
MAX.  
0.240  
0.320  
0.400  
0.500  
0.800  
2.0  
UNIT  
V
IF = 0.1mA  
IF = 1mA  
VF  
V
Forward voltage  
IF = 10mA  
VF  
V
IF = 30mA  
VF  
V
IF = 100mA  
VR = 25V  
VF  
V
Reverse current  
IR  
uA  
pF  
ns  
Diode capacitance  
Reverse recovery time  
VR = 1V , f = 1MHz  
CD  
10.0  
5
IF =10mA, VR = 10mA, IRR = 0.1 X IR, RL=100OHM  
trr  
RATINGAND CHARACTERISTIC CURVES for each diode (BAT54 /A / C / S)  
FIG.1-TYPICAL FORWARD  
FIG.2 - Leakage Current  
CHARACTERISTICS  
CHARACTERISTICS  
1000  
handbook, halfpage  
1000  
(1)  
(1) (2) (3)  
100  
100  
(2)  
10  
10  
(1)  
(2) (3)  
1
1
(3)  
0.1  
0
0.1  
0.4  
0.8  
1.2  
0
10  
20  
30  
FORWARD VOLTAGE,(V)  
REVERSE VOLTAGE, (V)  
O
C
O
C
O
C
O
O
C
O
(3) TA = 25 C  
(1) TA = 125  
(2) TA = 85  
(3) TA = 25  
(1) TA = 125  
C
(2) TA = 85  
FIG.3-TYPICAL JUNCTION CAPACITANCE  
15  
h
10  
5
0
0
10  
20  
30  
REVERSE VOLTAGE,(V)  
820 OHM  
+10V  
2 K  
100uH  
0.1 uF  
tp  
10%  
t
tr  
IF  
t
tr  
0.1 uF  
DUT  
90%  
50 OHM OUTPUT  
PULSE  
GENERATOR  
50 OHM INPUT  
SAMPLING  
IR(REC)=1 mA  
OSCILLOSCOPE  
VR  
OUTPUT PULSE  
(IF=IR=10mA;measured  
at iR(REC)=1mA)  
Notes :  
1. A2.0 Kohm variable resistor adjusted for a forward Current (IF) of 10mA.  
2. Input pulse is adjusted so IR(peak) is equal to 10 mA.  
3. tp >>trr.  
Notes:  
Notes:  
t
Recovery Time Equivalent Test Circuit  

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