1N5407G [FORMOSA]

3.0 AMP GLASS PASSIVATED RECTIFIERS; 3.0 AMP的玻璃钝化整流二极管
1N5407G
型号: 1N5407G
厂家: FORMOSA MS    FORMOSA MS
描述:

3.0 AMP GLASS PASSIVATED RECTIFIERS
3.0 AMP的玻璃钝化整流二极管

整流二极管
文件: 总2页 (文件大小:36K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
1N5400G THRU 1N5408G  
3.0 AMP GLASS PASSIVATED RECTIFIERS  
VOLTAGE RANGE  
50 to 1000 Volts  
CURRENT  
3.0 Ampere  
FEATURES  
* Low forward voltage drop  
* High current capability  
* High reliability  
DO-27  
.220(5.6)  
.197(5.0)  
* High surge current capability  
* Glass passivated junction  
DIA.  
1.0(25.4)  
MIN.  
MECHANICAL DATA  
* Case: Molded plastic  
.375(9.5)  
.285(7.2)  
* Epoxy: UL 94V-0 rate flame retardant  
* Lead: Axial leads, solderable per MIL-STD-202,  
method 208 guranteed  
* Polarity: Color band denotes cathode end  
* Mounting position: Any  
1.0(25.4)  
MIN.  
.052(1.3)  
*
Weight: 1.10 grams  
.048(1.2)  
DIA.  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating 25 C ambient temperature uniess otherwies specified.  
Single phase half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
1N5400G 1N5401G 1N5402G 1N5404G 1N5406G 1N5407G 1N5408G UNITS  
TYPE NUMBER  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
Maximum DC Blocking Voltage  
100  
1000  
Maximum Average Forward Rectified Current  
.375"(9.5mm) Lead Length at Ta=75 C  
3.0  
A
A
Peak Forward Surge Current, 8.3 ms single half sine-wave  
superimposed on rated load (JEDEC method)  
Maximum Instantaneous Forward Voltage at 3.0A  
Maximum DC Reverse Current  
150  
V
mA  
1.1  
5.0  
Ta=25 C  
at Rated DC Blocking Voltage  
Typical Junction Capacitance (Note 1)  
Typical Thermal Resistance RqJA (Note 2)  
Ta=100 C  
50  
mA  
pF  
40  
30  
C/W  
C
Operating and Storage Temperature Range TJ, TSTG  
-65 +175  
NOTES:  
1. Measured at 1MHz and applied reverse voltage of 4.0V D.C.  
2. Thermal Resistance from Junction to Ambient .375" (9.5mm) lead length.  
RATING AND CHARACTERISTIC CURVES (1N5400G THRU 1N5408G)  
FIG.1-TYPICAL FORWARD  
CHARACTERISTICS  
FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE  
3.0  
50  
2.5  
2.0  
Single Phase  
10  
3.0  
1.0  
1.5  
1.0  
0.5  
Half Wave 60Hz  
Resistive Or Inductive Load  
0.375"(9.5mm) Lead Length  
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
AMBIENT TEMPERATURE ( C)  
Tj=25 C  
Pulse Width 300us  
1% Duty Cycle  
0.1  
.01  
FIG.4-MAXIMUM NON-REPETITIVE FORWARD  
SURGE CURRENT  
250  
200  
150  
100  
50  
.6  
.7  
.8  
.9  
1.0 1.1 1.2 1.3  
FORWARD VOLTAGE,(V)  
8.3ms Single Half  
Tj=25 C  
Sine Wave  
JEDEC method  
FIG.3 - TYPICAL REVERSE  
CHARACTERISTICS  
0
50  
1
5
10  
100  
100  
NUMBER OF CYCLES AT 60Hz  
FIG.5-TYPICAL JUNCTION CAPACITANCE  
10  
1.0  
.1  
140  
Tj=100 C  
120  
100  
80  
60  
40  
20  
0
Tj=25 C  
.01  
.01  
.05  
.1  
.5  
1
5
10  
50  
100  
0
20 40 60 80 100 120 140  
REVERSE VOLTAGE,(V)  
PERCENTAGE RATED PEAK REVERSE VOLTAGE  

相关型号:

1N5407G-B

3.0A GLASS PASSIVATED RECTIFIER
DIODES

1N5407G-E

GLASS PASSIVATED JUNCTION RECTIFIER VOLTAGE: 50V to 1000V CURRENT: 3.0A
GULFSEMI

1N5407G-K

3A, 50V - 1000V Glass Passivated Rectifier
TSC

1N5407G-T

3.0A GLASS PASSIVATED RECTIFIER
DIODES

1N5407GH31

Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD,
RECTRON

1N5407GH32

Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD,
RECTRON

1N5407GH33

Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD,
RECTRON

1N5407GH34

Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD,
RECTRON

1N5407GH36-1

Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD,
RECTRON

1N5407GM

GLASS PASSIVATED JUNCTION RECTIFIER VOLTAGE: 50V to 1000V CURRENT: 3.0A
GULFSEMI

1N5407GM21

Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD,
RECTRON

1N5407GM22

Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD,
RECTRON