KBU610 [FCI]
6.0 Amp SINGLE PHASE SILICON BRIDGE; 6.0安培单相硅桥
| 型号： | KBU610 |
| 厂家： | 
FIRST COMPONENTS INTERNATIONAL |
| 描述： | 6.0 Amp SINGLE PHASE SILICON BRIDGE |
| 文件： | 总2页 (文件大小：127K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet
6.0 Amp
SINGLE PHASE SILICON BRIDGE
Mechanical Dimensions
Description
Mechanical Data: Weight - 0.3 Ounces. Mounting Torque -
5.1 lbs. Mounting Position - Any.
Features
n COMPACT SIZE
n
250 AMP SURGE OVERLOAD RATING
n LOW LEAKAGE CURRENT
n MEETS UL SPECIFICATION 94V-0
Electrical Characteristics @ 25oC.
KBU600 . . . 610 Series
Units
Maximum Ratings
KBU600
50
KBU601
100
70
KBU602
200
140
200
KBU604
400
280
400
KBU606
600
420
600
KBU608
800
560
800
KBU610
1000
700
Peak Repetitive Reverse Voltage...VRRM
RMS Reverse Voltage...VR(rms)
DC Blocking Voltage...VDC
Volts
Volts
Volts
35
50
100
1000
Amps
Amps
Volts
............................................. 6.0 ...............................................
............................................. 250 ...............................................
............................................. 1.0 ...............................................
Average Forward Rectified Current...IF(av)
TA = 25°C
Non-Repetitive Peak Forward Surge Current...IFSM
8.3 mS Single ½ Sine Wave Imposed on Rated Load
Forward Voltage...VF
Bridge Element @ 6.0 Amps
DC Reverse Current...I
@ Rated DC BlockinRg Voltage
T = 25°C
µAmps
mAmps
............................................. 10 ...............................................
............................................. 1.0 ...............................................
TAA =100°C
°C/W
°C
............................................. 10 ...............................................
......................................... -55 to 125 ..........................................
......................................... -55 to 150 ..........................................
Typical Thermal Resistance...RθJC
Operating Temperature Range...TJ
Storage Temperature Range...TSTRG
°C
Page 3-19
Data Sheet
6.0 Amp
SINGLE PHASE SILICON BRIDGE
Forward Current Derating Curve
Non-Repetitive
Peak Forward Surge Current
Number of Cycles @ 60 HZ
Typical Instantaneous Forward Characteristics
Typical Reverse Characteristics
10
100
10
TJ = 25°C
1
.
0
1.1 1.3 1.5
.7 .9
.0
Volts
160
80 120
Typical Junction Capacitance
Electrical Description
1000
100
10
Ratings at
25 Deg. C ambient
temperature
A
unless otherwise
specified.
Single Phase Half
Wave, 60 HZ
Resistive or
10
Reverse Voltage (Volts)
100
Inductive Load.
1.0
.1
For Capacitive
Load, Derate
Current by 20%.
Page 3-20
相关型号：
KBU610-LF
Bridge Rectifier Diode, 1 Phase, 6A, 1000V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, KBU, 4 PIN
WTE
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