SFR9214TF [FAIRCHILD]
Power Field-Effect Transistor, 1.53A I(D), 250V, 4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3;型号: | SFR9214TF |
厂家: | FAIRCHILD SEMICONDUCTOR |
描述: | Power Field-Effect Transistor, 1.53A I(D), 250V, 4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 开关 脉冲 晶体管 |
文件: | 总10页 (文件大小:367K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SFR/U9214
Advanced Power MOSFET
FEATURES
BVDSS = -250 V
RDS(on) = 4.0 Ω
ID = -1.53 A
ν
ν
ν
ν
ν
ν
ν
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10 µA (Max.) @ VDS = -250V
Lower RDS(ON) : 3.15 Ω (Typ.)
D-PAK
I-PAK
2
1
1
2
3
3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
Characteristic
Value
-250
-1.53
-0.97
-6.1
Units
VDSS
Drain-to-Source Voltage
V
Continuous Drain Current (TC=25oC)
Continuous Drain Current (TC=100oC)
Drain Current-Pulsed
ID
A
1
IDM
VGS
EAS
IAR
A
V
O
+
_
Gate-to-Source Voltage
30
2
Single Pulsed Avalanche Energy
Avalanche Current
O
110
-1.53
1.9
mJ
A
1
O
1
EAR
dv/dt
Repetitive Avalanche Energy
mJ
V/ns
W
O
3
Peak Diode Recovery dv/dt
O
-4.8
2.5
o
*
Total Power Dissipation (TA=25 C)
Total Power Dissipation (TC=25oC)
Linear Derating Factor
PD
19
W
W/oC
0.15
Operating Junction and
TJ , TSTG
- 55 to +150
300
Storage Temperature Range
oC
Maximum Lead Temp. for Soldering
Purposes, 1/8" from case for 5-seconds
TL
Thermal Resistance
Symbol
Characteristic
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
Typ.
Max.
Units
RθJC
--
--
--
6.58
50
oC/W
RθJA
RθJA
*
110
* When mounted on the minimum pad size recommended (PCB Mount).
Rev. B1
2001 Fairchild Semiconductor Corporation
P-CHANNEL
POWER MOSFET
SFR/U9214
Electrical Characteristics (TC=25oC unless otherwise specified)
Symbol
BVDSS
Characteristic
Min. Typ. Max. Units
Test Condition
V
GS=0V,ID=-250µA
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
V
V/oC
V
-250 --
-- -0.21 --
-2.0 -- -4.0
-- -100
--
∆BV/∆TJ
VGS(th)
ID=-250µA
See Fig 7
V
V
V
DS=-5V,ID=-250µA
GS=-30V
GS=30V
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
--
--
--
--
IGSS
nA
--
--
100
-10
VDS=-250V
DS=-200V,TC=125oC
IDSS
Drain-to-Source Leakage Current
µA
V
-- -100
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
4
RDS(on)
VGS=-10V,ID=-0.77A
VDS=-40V,ID=-0.77A
--
--
Ω
4.0
O
4
gfs
Ciss
Coss
Crss
td(on)
tr
--
--
--
--
--
--
--
--
--
--
--
1.0
--
S
O
225 295
VGS=0V,VDS=-25V,f =1MHz
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
55
20
30
45
60
30
11
--
35
13
10
18
24
11
9
pF
See Fig 5
VDD=-125V,ID=-1.6A,
RG=24Ω
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
See Fig 13
4
5
O
O
Qg
Total Gate Charge
Gate-Source Charge
Gate-Drain( “Miller “) Charge
VDS=-200V,VGS=-10V,
Qgs
Qgd
nC
2.0
4.6
ID=-1.6A
4
5
O
--
See Fig 6 & Fig 12
O
Source-Drain Diode Ratings and Characteristics
Symbol
IS
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
--
--
--
-- -1.53
-- -6.1
-- -4.0
Integral reverse pn-diode
in the MOSFET
TJ=25oC,IS=-1.53A,VGS=0V
TJ=25oC,IF=-1.6A
A
ISM
1
O
4
VSD
trr
V
O
ns
µC
-- 130 --
-- 0.61 --
4
Qrr
diF/dt=100A/µs
O
Notes ;
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
1
2
O
=-1.53A, VDD=-50V, RG=27Ω*, Starting TJ =25oC
O L=75mH, I
AS
_-1.6A, di/dt 250A/µs, VDD _BVDSS , Starting TJ =25oC
_
<
3
O I
<
<
SD
_
<
Pulse Test : Pulse Width = 250µs, Duty Cycle 2%
4
O
Essentially Independent of Operating Temperature
5
O
P-CHANNEL
POWER MOSFET
SFR/U9214
Fig 1. Output Characteristics
Fig 2. Transfer Characteristics
VGS
Top :
-15 V
-10 V
-8.0 V
-7.0 V
-6.0 V
-5.5 V
-5.0 V
100
10-1
10-2
100
10-1
10-2
Bottom : -4.5 V
150 oC
25 oC
@ Notes
1. VGS
2. VDS
:
=
=
- 55
@ Notes
1. 250 µs Pulse Test
2. TC
25 oC
:
0 V
-40 V
3. 250 µs Pulse Test
=
10-1
100
101
2
4
6
8
10
-VGS , Gate-Source Voltage [V]
-VDS , Drain-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
Fig 4. Source-Drain Diode Forward Voltage
12
10
8
100
10-1
10-2
VGS = -10 V
6
150 oC
25 oC
4
VGS = -20 V
@ Notes :
1. VGS = 0 V
2. 250 µs Pulse Test
2
@ Note : TJ = 25 oC
0
0
1
2
3
4
5
6
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
-ID , Drain Current [A]
-VSD , Source-Drain Voltage [V]
Fig 5. Capacitance vs. Drain-Source Voltage
Fig 6. Gate Charge vs. Gate-Source Voltage
400
300
200
100
12
C
iss=C +Cgd (C =shorted )
gs ds
VDS = -50 V
C
oss=C +C
ds gd
10
8
Crss=C
gd
VDS = -125 V
VDS = -200 V
Ciss
Coss
6
@Notes:
1. VGS =0V
2. f= 1MHz
4
Crss
2
@ Notes : ID = -1.6 A
00
10
0
1
10
0
2
4
6
8
10
-VDS , Drain-Source Voltage [V]
QG , Total Gate Charge [nC]
P-CHANNEL
POWER MOSFET
SFR/U9214
Fig 7. Breakdown Voltage vs. Temperature
Fig 8. On-Resistance vs. Temperature
1.2
2.5
2.0
1.5
1.0
0.5
0.0
1.1
1.0
@ Notes
1. VGS
2. ID
:
=
=
@ Notes :
1. VGS = 0 V
2. ID = -250 µA
0.9
-10 V
-0.8
A
0.8
-75 -50 -25
0
25
50
75 100 125 150 175
-75 -50 -25
0
25
50
75 100 125 150 175
TJ , Junction Temperature [oC]
TJ , Junction Temperature [oC]
Fig 9. Max. Safe Operating Area
Fig 10. Max. Drain Current vs. Case Temperature
2.0
Operation in This Area
is Limited by R DS(on)
1
10
1.5
1.0
0.5
0.0
0.1 ms
1 ms
0
10
10 ms
DC
@ Notes :
1. T = 25 oC
C
-1
10
2. T = 150 oC
J
3. Single Pulse
-2
10
0
1
2
25
50
75
100
125
150
10
10
10
o
T , Case Temperature [C]
-V , Drain-Source Voltage [V]
c
DS
Fig 11. Thermal Response
101
D=0.5
0.2
100
0.1
@ Notes :
1. Z
(t)=6.58 oC/W Max.
θ JC
2. Duty Factor, D=t1/t2
3. TJM-TC=PDM*Zθ JC(t)
0.05
P.DM
0.02
0.01
t1.
t2.
10-1
single pulse
10-5
10-4
10-3
10-2
10-1
100
101
t1 , Square Wave Pulse Duration [sec]
P-CHANNEL
POWER MOSFET
SFR/U9214
Fig 12. Gate Charge Test Circuit & Waveform
“ Current Regulator ”
VGS
Same Type
as DUT
50KΩ
Qg
12V
200nF
-10V
300nF
VDS
Qgs
Qgd
VGS
DUT
R2
-3mA
R1
Charge
Current Sampling (IG) Current Sampling (ID)
Resistor Resistor
Fig 13. Resistive Switching Test Circuit & Waveforms
RL
t on
t off
Vout
Vin
tf
td(on)
tr
td(off)
VDD
( 0.5 rated VDS
)
Vin
10%
RG
DUT
-10V
90%
Vout
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
2
2
LL
ID
----
--------------------
BVDSS -- VDD
EAS
=
LL IAS
VDS
t p
Time
Vary tp to obtain
required peak ID
VDD
VDS (t)
RG
C
VDD
ID (t)
DUT
-10V
IAS
BVDSS
t p
P-CHANNEL
POWER MOSFET
SFR/U9214
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
VDS
DUT
--
I S
L
Driver
VGS
Compliment of DUT
(N-Channel)
RG
VDD
VGS
• dv/dt controlled by “RG”
• IS controlled by Duty Factor “D”
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
Body Diode Reverse Current
IRM
I S
( DUT )
di/dt
IFM , Body Diode Forward Current
Vf
VDS
( DUT )
Body Diode
VDD
Forward Voltage Drop
Body Diode Recovery dv/dt
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
â
SMART START™
STAR*POWER™
Stealth™
VCX™
FAST
ACEx™
Bottomless™
CoolFET™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
FASTr™
FRFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
CROSSVOLT™
DenseTrench™
DOME™
POP™
Power247™
PowerTrenchâ
QFET™
EcoSPARK™
E2CMOSTM
TinyLogic™
QS™
EnSignaTM
TruTranslation™
UHC™
QT Optoelectronics™
Quiet Series™
SILENTSWITCHERâ
FACT™
FACT Quiet Series™
UltraFETâ
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITYARISING OUT OF THE APPLICATION OR USE OFANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICESORSYSTEMSWITHOUTTHEEXPRESSWRITTENAPPROVALOFFAIRCHILDSEMICONDUCTORCORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
Product Folder - Fairchild P/N SFU9214 - 250V P-Channel A-FET
SEARCH | Parametric | Cross Reference
sp
Fairchild Semiconductor
GO
Home >> Find products >>
find products
SFU9214
Related Links
Products groups
250V P-Channel A-FET
Analog and Mixed
Signal
Discrete
Interface
Logic
Microcontrollers
Non-Volatile
Memory
Optoelectronics
Markets and
applications
New products
Product selection and
parametric search
Cross-reference
search
Request samples
Datasheet
Download this
datasheet
Contents
How to order products
Features | Product status/pricing/packaging |
Models
Product Change Notices
(PCNs)
PDF
Support
Features
e-mail this datasheet
[E-
Distributor and field sales
representatives
●
●
●
●
●
●
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10 µA (Max.)
Quality and reliability
This pagePrint version
Design tools
@ V = -250V
DS
●
Lower R : 3.15 Ω (Typ.)
DS
technical information
buy products
back to top
technical support
my Fairchild
Product status/pricing/packaging
Product
Product status
Pricing*
Package type
Leads
Packing method
company
SFU9214TU
Full Production
$0.382 TO-251(IPAK)
3
RAIL
* 1,000 piece Budgetary Pricing
back to top
Models
Package & leads
PSPICE
Condition
Temperature range
Software version
Revision date
Electrical
TO-251(IPAK)-3
-55°C to 150°C
9.2
Oct 12, 2001
back to top
Product Folder - Fairchild P/N SFU9214 - 250V P-Channel A-FET
Home | Find products | Technical information | Buy products |
Support | Company | Contact us | Site index | Privacy policy
© Copyright 2002 Fairchild Semiconductor
Product Folder - Fairchild P/N SFR9214 - 250V P-Channel A-FET
SEARCH | Parametric | Cross Reference
sp
Fairchild Semiconductor
GO
Home >> Find products >>
find products
SFR9214
Related Links
Products groups
250V P-Channel A-FET
Analog and Mixed
Signal
Discrete
Interface
Logic
Microcontrollers
Non-Volatile
Memory
Optoelectronics
Markets and
applications
New products
Product selection and
parametric search
Cross-reference
search
Request samples
Datasheet
Download this
datasheet
Contents
How to order products
Features | Product status/pricing/packaging
Product Change Notices
(PCNs)
PDF
Support
Features
e-mail this datasheet
[E-
Distributor and field sales
representatives
●
●
●
●
●
●
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10 µA (Max.)
Quality and reliability
This pagePrint version
Design tools
@ V = -250V
DS
●
Lower R : 3.15 Ω (Typ.)
DS
technical information
buy products
back to top
technical support
my Fairchild
Product status/pricing/packaging
Product
SFR9214TM
SFR9214TF
Product status
Full Production
Full Production
Pricing*
Package type
$0.382 TO-252(DPAK)
$0.382 TO-252(DPAK)
Leads
Packing method
TAPE REEL
company
2
2
TAPE REEL
* 1,000 piece Budgetary Pricing
back to top
Home | Find products | Technical information | Buy products |
Support | Company | Contact us | Site index | Privacy policy
© Copyright 2002 Fairchild Semiconductor
相关型号:
SFR9220TF
Power Field-Effect Transistor, 3.1A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
FAIRCHILD
SFR9220TM
Power Field-Effect Transistor, 3.1A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
FAIRCHILD
SFR9230
Power Field-Effect Transistor, 5.4A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3
FAIRCHILD
SFR9230
Power Field-Effect Transistor, 5.4A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3
SAMSUNG
©2020 ICPDF网 联系我们和版权申明