SFP9640L [FAIRCHILD]

Advanced Power MOSFET; 先进的功率MOSFET
SFP9640L
型号: SFP9640L
厂家: FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述:

Advanced Power MOSFET
先进的功率MOSFET

晶体 晶体管 功率场效应晶体管 开关 脉冲 局域网
文件: 总7页 (文件大小:225K)
中文:  中文翻译
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SFP9640L  
Advanced Power MOSFET  
FEATURES  
BVDSS = -200 V  
RDS(on) = 0.5Ω  
ID = -11 A  
Avalanche Rugged Technology  
Rugged Gate Oxide Technology  
Lower Input Capacitances  
Improved Gate Charge  
Extended Safe Operating Area  
Lower Leakage Current : -10uA (Max.) @ VDS= -200V  
Lower RDS(ON) : 0.383 (Typ.)  
TO-220  
1
2
3
1.Gate 2. Drain 3. Source  
Absolute Maximum Ratings  
Symbol  
Characteristic  
Drain-to-Source Voltage  
Value  
-200  
-11  
Units  
VDSS  
V
Continuous Drain Current (TC=25)  
Continuous Drain Current (TC=100)  
Drain Current-Pulsed  
ID  
A
-7.5  
-44  
IDM  
VGS  
EAS  
IAR  
A
V
Gate-to-Source Voltage  
±20  
806  
-11  
Single Pulsed Avalanche Energy  
Avalanche Current  
mJ  
A
EAR  
dv/dt  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
Total Power Dissipation (TC=25)  
Linear Derating Factor  
9.8  
mJ  
V/ns  
W
-5.0  
98  
PD  
TJ , TSTG  
TL  
0.78  
W/℃  
Operating Junction and  
- 55 to +150  
300  
Storage Temperature Range  
Maximum Lead Temp. for Soldering  
Purposes, 1/8from case for 5-seconds  
Thermal Resistance  
Symbol  
RθJC  
Characteristic  
Junction-to-Case  
Case-to-Sink  
Typ.  
Max.  
1.27  
--  
Units  
--  
0.5  
--  
RθCS  
/W  
RθJA  
Junction-to-Ambient  
62.5  
Rev. A  
N-CHANNEL  
POWER MOSFET  
SFP9640L  
Electrical Characteristics (TC=25unless otherwise specified)  
Symbol  
BVDSS  
Characteristic  
Min. Typ. Max. Units  
Test Condition  
V
GS=0V,ID=-250μA  
Drain-Source Breakdown Voltage  
Breakdown Voltage Temp. Coeff.  
Gate Threshold Voltage  
V
V/℃  
V
-200  
--  
--  
ΔBV/ΔTJ  
VGS(th)  
ID=-250μA  
See Fig 7  
-- -0.16 --  
V
V
V
DS=-5V,ID=-250μA  
-1.0  
--  
-2.0  
GS=-20V  
GS=20V  
Gate-Source Leakage , Forward  
Gate-Source Leakage , Reverse  
--  
--  
--  
--  
-- -100  
IGSS  
nA  
--  
--  
100  
-10  
VDS=-200V  
DS=-160V,TC=125℃  
IDSS  
Drain-to-Source Leakage Current  
μA  
V
-- -100  
Static Drain-Source  
On-State Resistance  
Forward Transconductance  
Input Capacitance  
RDS(on)  
VGS=-5V,ID=-5.5A  
VDS=-40V,ID=-5.5A  
--  
--  
0.5  
gfs  
Ciss  
Coss  
Crss  
td(on)  
tr  
S
--  
--  
--  
--  
--  
--  
--  
--  
--  
--  
--  
5.47 --  
1220 1585  
VGS=0V,VDS=-25V,f =1MHz  
Output Capacitance  
Reverse Transfer Capacitance  
Turn-On Delay Time  
Rise Time  
310  
120  
40  
55  
115  
50  
59  
--  
207  
81  
pF  
ns  
See Fig 5  
16  
VDD=-100V,ID=-11A,  
23  
RG=4.6Ω  
td(off)  
tf  
Turn-Off Delay Time  
Fall Time  
54  
See Fig 13  
④ ⑤  
19  
Qg  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain(Miller) Charge  
46  
VDS=-160V,VGS=-5V,  
ID=-11A  
Qgs  
Qgd  
nC  
9.2  
22.9  
--  
See Fig 6 & Fig 12 ④ ⑤  
Source-Drain Diode Ratings and Characteristics  
Symbol  
IS  
Characteristic  
Continuous Source Current  
Pulsed-Source Current  
Diode Forward Voltage  
Reverse Recovery Time  
Reverse Recovery Charge  
Min. Typ. Max. Units  
Test Condition  
Integral reverse pn-diode  
in the MOSFET  
--  
--  
--  
--  
--  
-11  
-44  
A
ISM  
VSD  
trr  
V
-- -5.0  
--  
-- 1.45 --  
TJ=25,IS=-11A,VGS=0V  
TJ=25,IF=-11A  
ns  
μC  
-- 205  
Qrr  
diF/dt=100A/μs  
Notes ;  
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature  
L=3mH, IAS=-11A, VDD=-50V, RG=27, Starting TJ =25℃  
ISD-11A, di/dt100A/μs, VDDBVDSS , Starting TJ =25℃  
Pulse Test : Pulse Width = 250μs, Duty Cycle 2%  
Essentially Independent of Operating Temperature  
P-CHANNEL  
POWER MOSFET  
SFP9640L  
Fig 1. Output Characteristics  
Fig 2. Transfer Characteristics  
V
GS  
Top :  
15V  
10V  
8.0V  
7.0V  
6.0V  
5.5V  
5.0V  
1
10  
1
10  
Bottom : 4.5V  
150 oC  
25 oC  
0
10  
0
10  
@ Notes :  
1. V = 0 V  
GS  
2. V = 30 V  
DS  
@ Notes :  
3. 250 s Pulse Test  
µ
1. 250 s Pulse Test  
µ
- 55 oC  
2. T = 25 oC  
C
-1  
-1  
10  
10  
-1  
0
1
2
4
6
8
10  
10  
10  
10  
-V , Gate-Source Voltage [V]  
V , Drain-Source Voltage [V]  
GS  
DS  
Fig 3. On-Resistance vs. Drain Current  
Fig 4. Source-Drain Diode Forward Voltage  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
1
10  
VGS =-5V  
0
10  
150oC  
@Notes:  
1. VGS =0 V  
VGS =-10V  
2. 250 sPulseTest  
µ
25oC  
@Note :T =25 oC  
J
-1  
10  
0
5
10  
15  
20  
25  
30  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
I , Drain Current [A]  
-V , Source-Drain Voltage [V]  
D
SD  
Fig 5. Capacitance vs. Drain-Source Voltage  
Fig 6. Gate Charge vs. Gate-Source Voltage  
7.5  
5.0  
2.5  
0.0  
4000  
C =C +C (C =shorted)  
iss gs gd  
ds  
C =C +C  
oss ds gd  
C =C  
rss gd  
3000  
2000  
1000  
V
DS =-40V  
DS =-100V  
DS =-160V  
V
V
Ciss  
@Notes:  
1. V =0 V  
GS  
Coss  
Crss  
2. f=1MHz  
@Notes:I =-6.5A  
D
00  
10  
0
5
10  
15  
20  
25  
1
10  
Q , Total Gate Charge [nC]  
G
-V , Drain-Source Voltage [V]  
DS  
P-CHANNEL  
POWER MOSFET  
SFP9640L  
Fig 7. Breakdown Voltage vs. Temperature  
Fig 8. On-Resistance vs. Temperature  
1.2  
1.1  
1.0  
0.9  
0.8  
2.5  
2.0  
1.5  
1.0  
0.5  
@ Notes :  
1. V = -5 V  
@ Notes :  
GS  
1. V = 0 V  
2. I = -5.5 A  
GS  
D
2. I = 250 A  
µ
D
-75 -50 -25  
0
25 50 75 100 125 150 175 200  
o
-75 -50 -25  
0
25 50 75 100 125 150 175 200  
o
T , Junction Temperature [C]  
T , Junction Temperature [C]  
J
J
Fig 9. Max. Safe Operating Area  
Fig 10. Max. Drain Current vs. Case Temperature  
12  
Operation in This Area  
is Limited by R DS(on)  
2
10  
10  
8
0.1 ms  
1 ms  
1
10  
10 ms  
DC  
6
@ Notes :  
4
1. T = 25 oC  
0
10  
C
2. T = 150 oC  
J
2
3. Single Pulse  
-1  
0
10  
0
1
2
25  
50  
75  
100  
125  
150  
10  
10  
10  
o
T , Case Temperature [C]  
-V , Drain-Source Voltage [V]  
c
DS  
Fig 11. Thermal Response  
100  
D=0.5  
@ Notes :  
0.2  
1. Z (t)=1.02 oC/W Max.  
θ JC  
2. Duty Factor, D=t1/t2  
3. TJM-TC=PDM*Zθ JC(t)  
0.1  
10-1  
0.05  
PDM  
0.02  
0.01  
t1  
t2  
single pulse  
10-2  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
101  
t1 , Square Wave Pulse Duration [sec]  
P-CHANNEL  
POWER MOSFET  
SFP9640L  
Fig 12. Gate Charge Test Circuit & Waveform  
* Current Regulator ”  
VGS  
Same Type  
as DUT  
50KΩ  
Qg  
12V  
200nF  
10V  
300nF  
VDS  
Qgs  
Qgd  
VGS  
DUT  
R2  
3mA  
R1  
Charge  
Current Sampling (IG) Current Sampling (ID)  
Resistor  
Resistor  
Fig 13. Resistive Switching Test Circuit & Waveforms  
RL  
Vout  
Vin  
Vout  
90%  
VDD  
( 0.5 rated VDS  
)
RG  
DUT  
10%  
Vin  
10V  
td(on)  
tr  
td(off)  
tf  
t on  
t off  
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms  
BVDSS  
--------------------  
BVDSS -- VDD  
1
2
2
LL  
ID  
----  
EAS  
=
LL IAS  
VDS  
BVDSS  
IAS  
Vary tp to obtain  
required peak ID  
RG  
ID (t)  
C
VDD  
DUT  
VDD  
VDS (t)  
10V  
t p  
t p  
Time  
P-CHANNEL  
POWER MOSFET  
SFP9640L  
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms  
+
DUT  
VDS  
--  
I S  
L
Driver  
VGS  
Same Type  
as DUT  
RG  
VDD  
VGS  
• dv/dt controlled by RG"  
• IS controlled by Duty Factor D"  
Gate Pulse Width  
--------------------------  
VGS  
D =  
Gate Pulse Period  
10V  
( Driver )  
IFM , Body Diode Forward Current  
I S  
di/dt  
( DUT )  
IRM  
Body Diode Reverse Current  
Body Diode Recovery dv/dt  
Vf  
VDS  
( DUT )  
VDD  
Body Diode  
Forward Voltage Drop  
TRADEMARKS  
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is  
not intended to be an exhaustive list of all such trademarks.  
â
SMART START™  
STAR*POWER™  
Stealth™  
VCX™  
FAST  
ACEx™  
Bottomless™  
CoolFET™  
OPTOLOGIC™  
OPTOPLANAR™  
PACMAN™  
FASTr™  
FRFET™  
SuperSOT™-3  
SuperSOT™-6  
SuperSOT™-8  
SyncFET™  
GlobalOptoisolator™  
GTO™  
HiSeC™  
ISOPLANAR™  
LittleFET™  
MicroFET™  
MicroPak™  
MICROWIRE™  
CROSSVOLT™  
DenseTrench™  
DOME™  
POP™  
Power247™  
PowerTrenchâ  
QFET™  
EcoSPARK™  
E2CMOSTM  
TinyLogic™  
QS™  
EnSignaTM  
TruTranslation™  
UHC™  
QT Optoelectronics™  
Quiet Series™  
SILENTSWITCHERâ  
FACT™  
FACT Quiet Series™  
UltraFETâ  
STAR*POWER is used under license  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER  
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD  
DOES NOT ASSUME ANY LIABILITYARISING OUT OF THE APPLICATION OR USE OFANY PRODUCT  
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT  
RIGHTS, NOR THE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
DEVICESORSYSTEMSWITHOUTTHEEXPRESSWRITTENAPPROVALOFFAIRCHILDSEMICONDUCTORCORPORATION.  
As used herein:  
1. Life support devices or systems are devices or  
systems which, (a) are intended for surgical implant into  
the body, or (b) support or sustain life, or (c) whose  
failure to perform when properly used in accordance  
with instructions for use provided in the labeling, can be  
reasonably expected to result in significant injury to the  
user.  
2. A critical component is any component of a life  
support device or system whose failure to perform can  
be reasonably expected to cause the failure of the life  
support device or system, or to affect its safety or  
effectiveness.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
Advance Information  
Formative or  
In Design  
This datasheet contains the design specifications for  
product development. Specifications may change in  
any manner without notice.  
Preliminary  
First Production  
This datasheet contains preliminary data, and  
supplementary data will be published at a later date.  
Fairchild Semiconductor reserves the right to make  
changes at any time without notice in order to improve  
design.  
No Identification Needed  
Obsolete  
Full Production  
This datasheet contains final specifications. Fairchild  
Semiconductor reserves the right to make changes at  
any time without notice in order to improve design.  
Not In Production  
This datasheet contains specifications on a product  
that has been discontinued by Fairchild semiconductor.  
The datasheet is printed for reference information only.  
Rev. H4  

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