SFP9640L [FAIRCHILD]

Advanced Power MOSFET; 先进的功率MOSFET


型号：	SFP9640L
厂家：	FAIRCHILD SEMICONDUCTOR
描述：	Advanced Power MOSFET 先进的功率MOSFET 晶体晶体管功率场效应晶体管开关脉冲局域网
文件：	总7页 (文件大小：225K)
中文：	中文翻译
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SFP9640L

Advanced Power MOSFET

FEATURES

BV_DSS= -200 V

R_DS(on)= 0.5Ω

I_D= -11 A

❑ Avalanche Rugged Technology

❑ Rugged Gate Oxide Technology

❑ Lower Input Capacitances

❑ Improved Gate Charge

❑ Extended Safe Operating Area

❑ Lower Leakage Current : -10uA (Max.) @ V_DS= -200V

❑ Lower R_DS(ON): 0.383 Ω (Typ.)

TO-220

1.Gate 2. Drain 3. Source

Absolute Maximum Ratings

Symbol

Characteristic

Drain-to-Source Voltage

Value

-200

-11

Units

V_DSS

Continuous Drain Current (T_C=25℃)

Continuous Drain Current (T_C=100℃)

Drain Current-Pulsed

I_D

-7.5

-44

I_DM

V_GS

E_AS

I_AR

①

Gate-to-Source Voltage

±20

806

-11

Single Pulsed Avalanche Energy

Avalanche Current

②

①

③

E_AR

dv/dt

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Total Power Dissipation (T_C=25℃)

Linear Derating Factor

9.8

V/ns

-5.0

P_D

T_J, T_STG

T_L

0.78

W/℃

Operating Junction and

- 55 to +150

300

Storage Temperature Range

Maximum Lead Temp. for Soldering

℃

Purposes, 1/8＂ from case for 5-seconds

Thermal Resistance

Symbol

R_θJC

Characteristic

Junction-to-Case

Case-to-Sink

Typ.

Max.

1.27

Units

0.5

R_θCS

℃/W

R_θJA

Junction-to-Ambient

62.5

Rev. A

N-CHANNEL

POWER MOSFET

SFP9640L

Electrical Characteristics (T_C=25℃ unless otherwise specified)

Symbol

BV_DSS

Characteristic

Min. Typ. Max. Units

Test Condition

_GS=0V,I_D=-250μA

Drain-Source Breakdown Voltage

Breakdown Voltage Temp. Coeff.

Gate Threshold Voltage

V/℃

-200

ΔBV/ΔT_J

V_GS(th)

I_D=-250μA

See Fig 7

-- -0.16 --

_DS=-5V,I_D=-250μA

-1.0

-2.0

_GS=-20V

_GS=20V

Gate-Source Leakage , Forward

Gate-Source Leakage , Reverse

-- -100

I_GSS

100

-10

V_DS=-200V

_DS=-160V,T_C=125℃

I_DSS

Drain-to-Source Leakage Current

μA

-- -100

Static Drain-Source

On-State Resistance

Forward Transconductance

Input Capacitance

R_DS(on)

V_GS=-5V,I_D=-5.5A

V_DS=-40V,I_D=-5.5A

④

0.5

Ω

g_fs

C_iss

C_oss

C_rss

t_d(on)

t_r

5.47 --

1220 1585

V_GS=0V,V_DS=-25V,f =1MHz

Output Capacitance

Reverse Transfer Capacitance

Turn-On Delay Time

Rise Time

310

120

115

207

See Fig 5

V_DD=-100V,I_D=-11A,

R_G=4.6Ω

t_d(off)

t_f

Turn-Off Delay Time

Fall Time

See Fig 13

④ ⑤

Q_g

Total Gate Charge

Gate-Source Charge

Gate-Drain(＂Miller＂) Charge

V_DS=-160V,V_GS=-5V,

I_D=-11A

Q_gs

Q_gd

9.2

22.9

See Fig 6 & Fig 12 ④ ⑤

Source-Drain Diode Ratings and Characteristics

Symbol

I_S

Characteristic

Continuous Source Current

Pulsed-Source Current

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

Min. Typ. Max. Units

Test Condition

Integral reverse pn-diode

in the MOSFET

-11

-44

I_SM

①

④

V_SD

t_rr

-- -5.0

-- 1.45 --

T_J=25℃,I_S=-11A,V_GS=0V

T_J=25℃,I_F=-11A

μC

-- 205

Q_rr

di_F/dt=100A/μs

④

Notes ;

① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature

② L=3mH, I_AS=-11A, V_DD=-50V, R_G=27Ω, Starting T_J=25℃

③ I_SD≤-11A, di/dt≤100A/μs, V_DD≤BV_DSS, Starting T_J=25℃

④ Pulse Test : Pulse Width = 250μs, Duty Cycle ≤ 2%

⑤ Essentially Independent of Operating Temperature

P-CHANNEL

POWER MOSFET

SFP9640L

Fig 1. Output Characteristics

Fig 2. Transfer Characteristics

Top :

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

Bottom : 4.5V

150 ^oC

25 ^oC

@ Notes :

1. V = 0 V

2. V = 30 V

@ Notes :

3. 250 s Pulse Test

1. 250 s Pulse Test

- 55 ^oC

2. T = 25 ^oC

-1

-V , Gate-Source Voltage [V]

V , Drain-Source Voltage [V]

Fig 3. On-Resistance vs. Drain Current

Fig 4. Source-Drain Diode Forward Voltage

1.0

0.8

0.6

0.4

0.2

0.0

V_GS=-5V

150^oC

@Notes:

1. V_GS=0 V

V_GS=-10V

2. 250 sPulseTest

25^oC

@Note :T =25 ^oC

-1

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

I , Drain Current [A]

-V , Source-Drain Voltage [V]

Fig 5. Capacitance vs. Drain-Source Voltage

Fig 6. Gate Charge vs. Gate-Source Voltage

7.5

5.0

2.5

0.0

4000

C =C +C (C =shorted)

iss gs gd

C =C +C

oss ds gd

C =C

rss gd

3000

2000

1000

_DS=-40V

_DS=-100V

_DS=-160V

C_iss

@Notes:

1. V =0 V

C_oss

C_rss

2. f=1MHz

@Notes:I =-6.5A

0₀

Q , Total Gate Charge [nC]

-V , Drain-Source Voltage [V]

P-CHANNEL

POWER MOSFET

SFP9640L

Fig 7. Breakdown Voltage vs. Temperature

Fig 8. On-Resistance vs. Temperature

1.2

1.1

1.0

0.9

0.8

2.5

2.0

1.5

1.0

0.5

@ Notes :

1. V = -5 V

@ Notes :

1. V = 0 V

2. I = -5.5 A

2. I = 250 A

-75 -50 -25

25 50 75 100 125 150 175 200

-75 -50 -25

25 50 75 100 125 150 175 200

T , Junction Temperature [C]

Fig 9. Max. Safe Operating Area

Fig 10. Max. Drain Current vs. Case Temperature

Operation in This Area

is Limited by R _DS(on)

0.1 ms

1 ms

10 ms

@ Notes :

1. T = 25 ^oC

2. T = 150 ^oC

3. Single Pulse

-1

100

125

150

T , Case Temperature [C]

-V , Drain-Source Voltage [V]

Fig 11. Thermal Response

10⁰

D=0.5

@ Notes :

0.2

1. Z (t)=1.02 ^oC/W Max.

_θJC

2. Duty Factor, D=t₁/t₂

3. T_JM-T_C=P_DM*Z_θ_JC(t)

0.1

10^-1

0.05

P_DM

0.02

0.01

t₁

t₂

single pulse

10^-2

10^-5

10^-4

10^-3

10^-2

10^-1

10⁰

10¹

t₁, Square Wave Pulse Duration [sec]

P-CHANNEL

POWER MOSFET

SFP9640L

Fig 12. Gate Charge Test Circuit & Waveform

* Current Regulator ”

V_GS

Same Type

as DUT

50KΩ

Q_g

12V

200nF

10V

300nF

V_DS

Q_gs

Q_gd

V_GS

DUT

R₂

3mA

R₁

Charge

Current Sampling (I_G) Current Sampling (I_D)

Resistor

Fig 13. Resistive Switching Test Circuit & Waveforms

R_L

V_out

V_in

V_out

90%

V_DD

( 0.5 rated V_DS

)

R_G

DUT

10%

V_in

10V

t_d(on)

t_r

t_d(off)

t_f

t _on

t _off

Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms

BV_DSS

--------------------

BV_DSS-- V_DD

L_L

I_D

----

E_AS

L_LI_AS

V_DS

BV_DSS

I_AS

Vary t_pto obtain

required peak I_D

R_G

I_D(t)

V_DD

DUT

V_DD

V_DS(t)

10V

t _p

Time

P-CHANNEL

POWER MOSFET

SFP9640L

Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

V_DS

I _S

Driver

V_GS

Same Type

as DUT

R_G

V_DD

V_GS

• dv/dt controlled by ＂R_G＂

• I_Scontrolled by Duty Factor ＂D＂

Gate Pulse Width

--------------------------

V_GS

D =

Gate Pulse Period

10V

( Driver )

I_FM, Body Diode Forward Current

I _S

di/dt

( DUT )

I_RM

Body Diode Reverse Current

Body Diode Recovery dv/dt

V_f

V_DS

( DUT )

V_DD

Body Diode

Forward Voltage Drop

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is

not intended to be an exhaustive list of all such trademarks.

SMART START™

STAR*POWER™

Stealth™

VCX™

FAST

ACEx™

Bottomless™

CoolFET™

OPTOLOGIC™

OPTOPLANAR™

PACMAN™

FASTr™

FRFET™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SyncFET™

GlobalOptoisolator™

GTO™

HiSeC™

ISOPLANAR™

LittleFET™

MicroFET™

MicroPak™

MICROWIRE™

CROSSVOLT™

DenseTrench™

DOME™

POP™

Power247™

PowerTrench^â

QFET™

EcoSPARK™

E²CMOS^TM

TinyLogic™

QS™

EnSigna^TM

TruTranslation™

UHC™

QT Optoelectronics™

Quiet Series™

SILENTSWITCHER^â

FACT™

FACT Quiet Series™

UltraFET^â

STAR*POWER is used under license

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER

NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD

DOES NOT ASSUME ANY LIABILITYARISING OUT OF THE APPLICATION OR USE OFANY PRODUCT

OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT

RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICESORSYSTEMSWITHOUTTHEEXPRESSWRITTENAPPROVALOFFAIRCHILDSEMICONDUCTORCORPORATION.

As used herein:

1. Life support devices or systems are devices or

systems which, (a) are intended for surgical implant into

the body, or (b) support or sustain life, or (c) whose

failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be

reasonably expected to result in significant injury to the

user.

2. A critical component is any component of a life

support device or system whose failure to perform can

be reasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or

In Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed

Obsolete

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. H4

SFP9640L [FAIRCHILD]

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