QSE122 [FAIRCHILD]
PLASTIC SILICON INFRARED PHOTOTRANSISTOR; 塑封硅红外光敏晶体管
| 型号： | QSE122 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | PLASTIC SILICON INFRARED PHOTOTRANSISTOR |
| 文件： | 总4页 (文件大小：330K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PLASTIC SILICON
INFRARED PHOTOTRANSISTOR
QSE122
PACKAGE DIMENSIONS
0.175 (4.44)
0.087 (2.22)
Ø 0.065 (1.65)
0.050 (1.27)
0.200 (5.08)
Ø 0.095 (2.41)
0.500 (12.70)
MIN
COLLECTOR
EMITTER
0.020 (0.51) SQ.
(2X)
SCHEMATIC
Collector
0.100 (2.54)
0.030 (0.76)
0.100 (2.54)
NOM
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of .010 (.25) on all nonꢀnominal dimensions ꢁnless
otherwise specified.
Emitter
DESCRIPTION
The QSE122 is a silicon phototransistor encapsulated in a wide angle, infrared transparent, black plastic sidelooker package.
FEATURES
•
•
•
•
•
•
•
NPN silicon phototransistor
Package type: Sidelooker
Medium wide reception angle, 50°
Package material and color: black epoxy
Matched emitter: QEE113
Daylight filter
High sensitivity
© 2002 Fairchild Semiconductor Corporation
Page 1 of 4
5/1/02
PLASTIC SILICON
INFRARED PHOTOTRANSISTOR
QSE122
ABSOLUTE MAXIMUM RATINGS (T = 25°C ꢁnless otherwise specified)
A
Parameter
Symbol
Rating
ꢀ40 to +100
ꢀ40 to +100
240 for 5 sec
260 for 10 sec
30
Unit
°C
°C
°C
°C
V
T
Operating Temperatꢁre
Storage Temperatꢁre
OPR
T
STG
(2,3,4)
(2,3)
T
Soldering Temperatꢁre (Iron)
SOLꢀI
T
Soldering Temperatꢁre (Flow)
Collector Emitter Voltage
Emitter Collector Voltage
SOLꢀF
V
CE
V
5
V
EC
(1)
P
100
mW
Power Dissipation
D
NOTES:
1. Derate power dissipation linearly 1.33 mW/°C above 25°C.
2. RMA flꢁx is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16" (1.6 mm) minimꢁm from hoꢁsing.
5. λ = 880 nm (AlGaAs).
ELECTRICAL / OPTICAL CHARACTERISTICS (T =25°C ꢁnless otherwise specified)
A
Parameter
Test Conditions
Symbol
Min
Typ
Max
Units
λ
Peak Sensitivity
—
—
—
30
5
880
25
—
—
—
nM
Deg.
nA
V
PS
Reception Angle
Θ
V
= 10 V, E = 0
I
Collector Emitter Dark Cꢁrrent
CollectorꢀEmitter Breakdown
EmitterꢀCollector Breakdown
100
—
CE
e
CEO
I = 1 mA
BV
—
C
CEO
I = 100 µA
BV
—
—
V
E
ECO
(5)
OnꢀState Collector Cꢁrrent
QSE122
2
I
3.0
—
12.0
mA
E = 0.5 mW/cm , V = 5 V
C(ON)
e
CE
2
(5)
V
—
—
—
—
8
0.4
—
V
E = 0.5 mW/cm , I = 0.1 mA
Satꢁration Voltage
CE(SAT)
e
C
t
Rise Time
Fall Time
µs
µs
r
I = 1mA, V = 5V, R = 100Ω
C
CC
L
t
8
—
f
© 2002 Fairchild Semicondꢁctor Corporation
Page 2 of 4
5/1/02
PLASTIC SILICON
INFRARED PHOTOTRANSISTOR
QSE122
Figure 1. Light Current vs. Radiant Intensity
= 5V
102
101
100
10ꢀ1
Figure 2. Angular Response Curve
V
CE
90
100
80
GaAs Light Soꢁrce
110
70
120
60
130
50
40
140
150
160
170
30
20
10
180
1.0
0
1.0
0.4
0.2
0.0
0.2
0.4
0.6
0.8
0.8
0.6
0.1
1
2
E
ꢀ Radiant Intensity (mW/cm )
e
Figure 3. Dark Current vs. Collector - Emitter Voltage
Figure 4. Light Current vs. Collector - Emitter Voltage
102
101
100
10ꢀ1
10ꢀ2
10ꢀ3
101
100
10ꢀ1
10ꢀ2
2
I =1mW/cm
e
2
2
I =0.5mW/cm
e
I =0.2mW/cm
e
2
I =0.1mW/cm
e
Normalized to:
V =5V
CE
2
I =0.5mW/cm
e
T =25°C
A
0
5
10
15
20
25
30
0.1
1
10
V
ꢀ CollectorꢀEmitter Voltage (V)
CE
V
ꢀ CollectorꢀEmitter Voltage (V)
CE
Figure 5. Dark Current vs. Ambient Temperature
Normalized to:
104
103
102
101
100
10ꢀ1
10ꢀ2
V
= 25V
V
= 25V
CE
CE
T
= 25°C
A
= 10V
V
CE
25
50
75
100
°C
)
T
ꢀ Ambient Temperatꢁre (
A
© 2002 Fairchild Semicondꢁctor Corporation
Page 3 of 4
5/1/02
PLASTIC SILICON
INFRARED PHOTOTRANSISTOR
QSE122
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As ꢁsed herein:
1. Life sꢁpport devices or systems are devices or systems
which, (a) are intended for sꢁrgical implant into the body, or
(b) sꢁpport or sꢁstain life, and (c) whose failꢁre to perform
when properly ꢁsed in accordance with instrꢁctions for ꢁse
provided in the labeling, can be reasonably expected to
resꢁlt in a significant injꢁry of the ꢁser.
2. A critical component in any component of a life sꢁpport
device or system whose failꢁre to perform can be
reasonably expected to caꢁse the failꢁre of the life sꢁpport
device or system, or to affect its safety or effectiveness.
© 2002 Fairchild Semicondꢁctor Corporation
Page 4 of 4
5/1/02
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