QSE114 [FAIRCHILD]

PLASTIC SILICON INFRARED PHOTOTRANSISTOR; 塑封硅红外光敏晶体管


型号：	QSE114
厂家：	FAIRCHILD SEMICONDUCTOR
描述：	PLASTIC SILICON INFRARED PHOTOTRANSISTOR 塑封硅红外光敏晶体管晶体光电晶体管光电晶体管 LTE
文件：	总4页 (文件大小：322K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PLASTIC SILICON

INFRARED PHOTOTRANSISTOR

QSE113 QSE114

PACKAGE DIMENSIONS

0.175 (4.44)

0.087 (2.22)

Ø 0.065 (1.65)

0.050 (1.27)

0.200 (5.08)

Ø 0.095 (2.41)

0.500 (12.70)

MIN

COLLECTOR

EMITTER

0.020 (0.51) SQ.

(2X)

SCHEMATIC

Collector

0.100 (2.54)

0.030 (0.76)

0.100 (2.54)

NOM

NOTES:

1. Dimensions for all drawings are in inches (mm).

2. Tolerance of .010 (.25) on all nonꢀnominal dimensions ꢁnless

otherwise speciﬁed.

Emitter

DESCRIPTION

The QSE113/114 is a silicon phototransistor encapsulated in a wide angle, infrared transparent, black plastic sidelooker package.

FEATURES

•

NPN silicon phototransistor

Package type: Sidelooker

Medium wide reception angle, 50°

Package material and color: black epoxy

Matched emitter: QEE113

Daylight ﬁlter

High sensitivity

Page 1 of 4

5/1/02

PLASTIC SILICON

INFRARED PHOTOTRANSISTOR

QSE113 QSE114

ABSOLUTE MAXIMUM RATINGS (T = 25°C ꢁnless otherwise speciﬁed)

Parameter

Symbol

Rating

ꢀ40 to +100

240 for 5 sec

260 for 10 sec

Unit

°C

Operating Temperatꢁre

Storage Temperatꢁre

OPR

STG

(2,3,4)

(2,3)

Soldering Temperatꢁre (Iron)

SOLꢀI

Soldering Temperatꢁre (Flow)

Collector Emitter Voltage

Emitter Collector Voltage

SOLꢀF

(1)

100

Power Dissipation

NOTES:

1. Derate power dissipation linearly 1.33 mW/°C above 25°C.

2. RMA ﬂꢁx is recommended.

3. Methanol or isopropyl alcohols are recommended as cleaning agents.

4. Soldering iron 1/16" (1.6 mm) minimꢁm from hoꢁsing.

5. λ = 880 nm (AlGaAs).

ELECTRICAL / OPTICAL CHARACTERISTICS (T =25°C ꢁnless otherwise speciﬁed)

Parameter

Test Conditions

Symbol

Min

Typ

Max

Units

Peak Sensitivity

—

880

—

Deg.

Reception Angle

= 10 V, E = 0

Collector Emitter Dark Cꢁrrent

CollectorꢀEmitter Breakdown

EmitterꢀCollector Breakdown

100

—

CEO

I = 1 mA

—

CEO

I = 100 µA

—

ECO

(5)

OnꢀState Collector Cꢁrrent

QSE113

0.25

1.00

—

1.50

E = 0.5 mW/cm , V = 5 V

C(ON)

(5)

OnꢀState Collector Cꢁrrent

—

E = 0.5 mW/cm , V = 5 V

C(ON)

QSE114

(5)

—

0.4

—

E = 0.5 mW/cm , I = 0.1 mA

Satꢁration Voltage

CE(SAT)

Rise Time

Fall Time

µs

I = 1mA, V = 5V, R = 100Ω

—

Page 2 of 4

5/1/02

PLASTIC SILICON

INFRARED PHOTOTRANSISTOR

QSE113 QSE114

Figure 1. Light Current vs. Radiant Intensity

= 5V

10¹

10⁰

10^ꢀ1

Figure 2. Angular Response Curve

100

110

GaAs Light Soꢁrce

120

130

140

150

160

170

180

1.0

0.4

0.2

0.0

0.2

0.4

0.6

0.8

0.6

0.1

ꢀ Radiant Intensity (mW/cm )

Figure 3. Dark Current vs. Collector - Emitter Voltage

Figure 4. Light Current vs. Collector - Emitter Voltage

10¹

10⁰

10¹

10⁰

10^ꢀ1

10^ꢀ2

= 1mW/cm

= 0.5mW/cm

= 0.2mW/cm

= 0.1mW/cm

10^ꢀ1

10^ꢀ2

10^ꢀ3

Normalized to:

= 5V

= 0.5mW/cm

= 25°C

0.1

V_CEꢀ CollectorꢀEmitter Voltage (V)

Figure 5. Dark Current vs. Ambient Temperature

Normalized to:

10⁴

10³

10²

10¹

= 25V

= 25°C

= 10V

10⁰

10^ꢀ1

100

°C

)

T_Aꢀ Ambient Temperatꢁre (

Page 3 of 4

5/1/02

PLASTIC SILICON

INFRARED PHOTOTRANSISTOR

QSE113 QSE114

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO

ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME

ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;

NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES

OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR

CORPORATION. As ꢁsed herein:

1. Life sꢁpport devices or systems are devices or systems

which, (a) are intended for sꢁrgical implant into the body, or

(b) sꢁpport or sꢁstain life, and (c) whose failꢁre to perform

when properly ꢁsed in accordance with instrꢁctions for ꢁse

provided in the labeling, can be reasonably expected to

resꢁlt in a significant injꢁry of the ꢁser.

2. A critical component in any component of a life sꢁpport

device or system whose failꢁre to perform can be

reasonably expected to caꢁse the failꢁre of the life sꢁpport

device or system, or to affect its safety or effectiveness.

Page 4 of 4

5/1/02

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