QSD2030 [FAIRCHILD]
PLASTIC SILICON PHOTODIODE; 塑料硅光电二极管
| 型号： | QSD2030 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | PLASTIC SILICON PHOTODIODE |
| 文件： | 总1页 (文件大小：46K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
QSD2030
PLASTIC SILICON PHOTODIODE
PACKAGE DIMENSIONS
0.195 (4.95)
FEATURES
• PIN Photodiode
REFERENCE
SURFACE
• Package type: T-1 3/4 (5mm lens diameter)
• Wide Reception Angle, 40°
• Package material and color: Clear epoxy
• High Sensitivity
0.305 (7.75)
0.040 (1.02)
NOM
• Peak Sensitivity Dꢀ= 880 nm
0.800 (20.3)
MIN
0.050 (1.25)
CATHODE
0.100 (2.54)
NOM
0.240 (6.10)
0.215 (5.45)
1. Derate power dissipation linearly 1.33
0.020 (0.51)
SQ. (2X)
mW/°C above 25°C.
2. RMA flux is recommended.
SCHEMATIC
3. Methanol or isopropyl alcohols are
recommended as cleaning agents.
NOTES:
CATHODE
4. Soldering iron 1/16” (1.6mm) minimum
from housing.
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of .010 (.25) on all non-nominal dimensions
unless otherwise specified.
ANODE
(T = 25°C unless otherwise specified)
ABSOLUTE MAXIMUM RATINGS
A
Parameter
Operating Temperature
Symbol
TOPR
TSTG
TSOL-I
TSOL-F
VBR
Rating
-40 to +100
-40 to +100
240 for 5 sec
260 for 10 sec
50
Unit
°C
Storage Temperature
°C
Soldering Temperature (Iron)(2,3,4)
Soldering Temperature (Flow)(2,3)
Reverse Breakdown Voltage
Power Dissipation(1)
°C
°C
V
PD
100
mW
(TA =25°C)
ELECTRICAL / OPTICAL CHARACTERISTICS
PARAMETER
TEST CONDITIONS
SYMBOL
MIN
—
TYP
880
—
MAX
—
UNITS
nm
nm
Deg.
V
Peak Sensitivity Wavelength
Wavelength Sensitivity Range
Reception Angle
Forward Voltage
Reverse Dark Current
Reverse Light Current
Capacitance
DPS
DSR
0
400
—
1100
—
20
1.3
—
IF = 80 mA
VR = 20 V, Ee = 0
Ee = 0.5 mW/cm2, VR = 5 V, D = 950 nm
VR = 0, f = 1 MHz, Ee = 0
VR = 5 V, RL = 50 1
VF
ID
—
—
—
5
nA
IL
15
—
25
60
5
µA
C
—
—
—
pF
Rise Time
tr
—
ns
Fall Time
D = 950 nm
tf
—
5
10/31/01
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