PN2369 [FAIRCHILD]
NPN Switching Transistor; NPN开关晶体管
| 型号： | PN2369 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | NPN Switching Transistor |
| 文件： | 总4页 (文件大小：31K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PN2369
NPN Switching Transistor
•
This device is designed for high speed saturated switching at collector
currents of 10mA to 100mA.
•
Sourced from process 21.
TO-92
1. Emitter 2. Base 3. Collector
1
Absolute Maximum Ratings* T =25°C unless otherwise noted
a
Symbol
Parameter
Ratings
15
Units
V
V
V
V
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
CEO
40
V
CBO
EBO
4.5
V
I
- Continuous
200
mA
°C
C
T , T
Operating and Storage Junction Temperature Range
-55 ~ 150
J
STG
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics T =25°C unless otherwise noted
a
Symbol
Parameter
Test Condition
Min.
Max.
Units
Off Characteristics
V
V
V
V
Collector-Emitter Breakdown Voltage *
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
I
I
I
I
= 10mA, I = 0
15
40
40
4.5
V
V
V
V
(BR)CEO
(BR)CES
(BR)CBO
(BR)EBO
CBO
C
C
C
E
B
= 10µA, V = 0
BE
= 10µA, I = 0
E
= 10µA, I = 0
C
I
V
V
= 20V, I = 0
0.4
30
µA
µA
CB
CB
E
= 20V, I = 0, T = 125°C
E
a
On Characteristics
h
DC Current Gain *
I
I
= 10mA, V = 1.0V
40
20
120
FE
C
C
CE
= 100mA, V = 2.0V
CE
V
V
Collector-Emitter Saturation Voltage *
Base-Emitter Saturation Voltage
I
I
= 10mA, I = 1.0mA
0.25
0.85
V
V
CE(sat)
C
C
B
= 10mA, I = 1.0mA
0.7
BE(sat)
B
Small Signal Characteristics
C
C
Output Capacitance
Input Capacitance
V
V
= 5.0V, I = 0, f = 1.0MHz
4.0
5.0
pF
pF
obo
ibo
fe
CB
EB
E
= 0.5V, I = 0, f = 1.0MHz
C
h
Small -Signal Current Gain
I = 10mA, V = 10V, R = 2.0kΩ,
C CE G
5.0
f = 100MHz
Switching Characteristics
t
t
t
Storage Time
Turn-On Time
Turn-Off Time
I
= I = I = 10mA
13
12
18
ns
ns
ns
s
B1
B2
C
V
V
= 3.0V, I = 10mA, I = 3.0mA
C B1
on
off
CC
= 3.0V, I = 10mA, I = 3.0mA,
CC
C
B1
I
= 1.5mA
B2
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
©2004 Fairchild Semiconductor Corporation
Rev. A, January 2004
Thermal Characteristics T =25°C unless otherwise noted
a
Symbol
Parameter
Max.
Units
P
Total Device Dissipation
Derate above 25°C
350
2.8
mW
mW/°C
D
R
R
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
125
357
°C/W
°C/W
θJC
θJA
©2004 Fairchild Semiconductor Corporation
Rev. A, January 2004
Package Dimensions
TO-92
+0.25
–0.15
4.58
0.46 ±0.10
+0.10
–0.05
1.27TYP
1.27TYP
0.38
[1.27 ±0.20
]
[1.27 ±0.20]
3.60 ±0.20
(R2.29)
Dimensions in Millimeters
©2004 Fairchild Semiconductor Corporation
Rev. A, January 2004
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failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
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be reasonably expected to cause the failure of the life
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I11
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