NZT45H8_NL [FAIRCHILD]

Power Bipolar Transistor, 8A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN;


型号：	NZT45H8_NL
厂家：	FAIRCHILD SEMICONDUCTOR
描述：	Power Bipolar Transistor, 8A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN 开关光电二极管晶体管
文件：	总4页 (文件大小：135K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Discrete POWER & Signal

Technologies

D45H8

NZT45H8

TO-220

SOT-223

PNP Power Amplifier

This device is designed for power amplifier, regulator and switching

circuits where speed is important. Sourced from Process 5Q.

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_CEO

I_C

Collector-Emitter Voltage

Collector Current - Continuous

8.0

Operating and Storage Junction Temperature Range

-55 to +150

°C

T_J, T_stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

TA = 25°C unless otherwise noted

Symbol

Characteristic

Max

Units

D45H8

*NZT45H8

P_D

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Case

480

2.1

1.5

mW/°C

°C/W

R_θ

Thermal Resistance, Junction to Ambient

62.5

83.3

R_θ

°C/W

*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm².

1997 Fairchild Semiconductor Corporation

PNP Power Amplifier

(continued)

Electrical Characteristics

TA = 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Max

Units

OFF CHARACTERISTICS

V_(BR)CEO

I_CBO

Collector-Emitter Breakdown Voltage

I_C= 100 mA, I_B= 0

V_CB= 60 V, I_E= 0

V_EB= 5.0 V, I_C= 0

Collector-Cutoff Current

Emitter-Cutoff Current

µA

I_EBO

100

ON CHARACTERISTICS

h_FE

DC Current Gain

I_C= 2.0 A, V_CE= 1.0 V

I_C= 4.0 A, V_CE= 1.0 V

I_C= 8.0 A, I_B= 0.4 A

Collector-Emitter Saturation Voltage

Base-Emitter On Voltage

1.0

1.5

V_CE(sat)

V_BE(sat)

V_BE(on)

I_C= 8.0 A, I_B= 0.8 A

Base-Emitter On Voltage

I_C= 10 mA, V_CE= 2.0 V

0.54

0.65

SMALL SIGNAL CHARACTERISTICS

Current Gain - Bandwidth Product

I_C= 500 mA, V_CE= 10 V,

MHz

f_T

DC Typical Characteristics

Collector-Emitter Saturation

Voltage vs Collector Current

Typical Pulsed Current Gain

vs Collector Current

0.8

0.6

0.4

0.2

200

Vce = 5V

180

160

140

120

100

= 10

125 °C

25 °C

125 ºC

25 °C

- 40 ºC

- 40 °C

0.1

10 15

0.01 0.02 0.05 0.1 0.2

0.5

I _C- COLLECTOR CURRENT (A)

I_C- COLLECTOR CURRENT (A)

PNP Power Amplifier

(continued)

DC Typical Characteristics (continued)

Base-Emitter ON Voltage vs

Collector Current

Base-Emitter Saturation

Voltage vs Collector Current

1.6

1.4

1.2

= 10

= 5V

1.4

1.2

- 40 ºC

125 ºC

- 40 ºC

0.8

0.6

0.4

25 °C

125 ºC

25 °C

0.8

0.6

0.4

0.1

I _C- COLLECTOR CURRENT (A)

Collector-Cutoff Current

vs Ambient Temperature

100

V_CB= 50V

0.1

0.01

100

125

150

T_A- AMBIENT TEMPERATURE ( C)

AC Typical Characteristics

Safe Operating Area TO-220

PNP Power Amplifier

(continued)

AC Typical Characteristics (continued)

Maximum Power Dissipation

vs. Case Temperature

Maximum Power Dissipation

vs. Ambient Temperature

POWER DISSIPATION vs

AMBIENT TEMPERATURE

1.5

1.25

SOT-223

0.75

0.5

0.25

100

125

150

TEMPERATURE (^oC)

Thermal Response in TO-220 Package

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