NM25C640LVM8 [FAIRCHILD]
SPI Serial EEPROM ; SPI串行EEPROM\n
| 型号： | NM25C640LVM8 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | SPI Serial EEPROM
|
| 文件： | 总10页 (文件大小：97K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PRELIMINARY
March 1999
NM25C640
64K-Bit Serial CMOS EEPROM
(Serial Peripheral Interface (SPI) Synchronous Bus)
General Description
Features
The NM25C640 is a 65,536-bit CMOS EEPROM with an SPI
compatible serial interface. The NM25C640 is designed for data
storage in applications requiring both non-volatile memory and in-
systemdataupdates. ThisEEPROMiswellsuitedforapplications
using the 68HC11 series of microcontrollers that support the SPI
interface for high speed communication with peripheral devices
via a serial bus to reduce pin count. The NM25C640 is imple-
mented in Fairchild Semiconductor’s floating gate CMOS process
that provides superior endurance and data retention.
■ 2.75 MHz clock rate @ 4.5V to 5.5V
2.1 MHz @ 2.7V to 4.5V
■ 65,536 bits organized as 8,192 x 8
■ Multiple chips on the same 3-wire bus with separate chip
select lines
■ Self-timed programming cycle
■ Simultaneous programming of 1 to 32 bytes at a time
■ Status register can be polled during programming to monitor
READY/BUSY
The serial data transmission of this device requires four signal
lines to control the device operation: Chip Select (CS), Clock
(SCK), Data In (SI), and Serial Data Out (SO). All programming
cycles are completely self-timed and do not require an erase
before WRITE.
■ Write Protect (WP) pin and write disable instruction for both
hardware and software write protection
■ Block write protect feature to protect against accidental
writes
BLOCK WRITE protection is provided by programming the STA-
TUS REGISTER with one of four levels of write protection.
Additionally, separate WRITE enable and WRITE disable instruc-
tions are provided for data protection.
■ Endurance: 1,000,000 data changes
■ Data retention greater than 40 years
■ Packages available: 8-pin DIP or 8-Pin SO
Hardware data protection is provided by the WP pin to protect
against inadvertent programming. The HOLD pin allows the serial
communication to be suspended without resetting the serial
sequence.
Block Diagram
CS
HOLD
SCK
VCC
VSS
Instruction
Decoder
Control Logic
and Clock
WP
Instruction
SI
Generators
Register
Program
Enable
Address
Counter/
Register
High Voltage
Generator
and
Program
Timer
VPP
EEPROM Array
65,536 Bits
(8,192 x 8)
Decoder
1 of 8,192
Read/Write Amps
Data In/Out Register
8 Bits
Data Out
Buffer
SO
Non-Volatile
Status Register
DS500041-1
1
© 1999 Fairchild Semiconductor Corporation
NM25C640 Rev. D.2
www.fairchildsemi.com
Connection Diagram
Dual-In-Line Package (N)
and SO Package (M8)
CS
SO
WP
VSS
1
2
3
4
8
7
6
5
VCC
HOLD
SCK
SI
NM25C640
Top View
DS500041-2
Pin Names
CS
SO
Chip Select Input
Serial Data Output
Write Protect
WP
VSS
Ground
SI
Serial Data Input
Serial Clock Input
Suspends Serial Data
Power Supply
SCK
HOLD
VCC
Ordering Information
NM 25
C
XX LZ E XX
Letter Description
Package
N
M8
8-Pin DIP
8-Pin SO
Temp. Range
None
0 to 70°C
V
E
-40 to +125°C
-40 to +85°C
Voltage Operating Range
Blank
L
4.5V to 5.5V
2.7V to 4.5V
LZ
2.7V to 4.5V and
<1µA Standby Current
Density/Mode
Interface
640
C
64K, mode 0
CMOS
25
SPI
NM
Fairchild Nonvolatile
Memory
2
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NM25C640 Rev. D.2
Standard Voltage 4.5 ≤ VCC ≤ 5.5V Specifications
Operating Conditions
Absolute Maximum Ratings (Note 1)
Ambient Operating Temperature
NM25C640
Ambient Storage Temperature
-65°C to +150°C
0°C to +70°C
-40°C to +85°C
-40°C to +125°C
All Input or Output Voltage with
Respect to Ground
NM25C640E
NM25C640V
+6.5V to -0.3V
+300°C
Lead Temp. (Soldering, 10 sec.)
ESD Rating
Power Supply (VCC
)
4.5V to 5.5V
2000V
DC and AC Electrical Characteristics 4.5V ≤ VCC ≤ 5.5V (unless otherwise specified)
Symbol
Parameter
Conditions
Min
Max
Units
ICC
ICCSB
IIL
Operating Current
CS = VIL
3
50
mA
µA
µA
µA
V
Standby Current
Input Leakage
CS = VCC
VIN = 0 to VCC
VOUT = GND to VCC
-1
-1
+1
IOL
Output Leakage
+1
VIL
CMOS Input Low Voltage
CMOS Input High Voltage
Output Low Voltage
Output High Voltage
SCK Frequency
-0.3
VCC * 0.3
VCC + 0.3
0.4
VIH
VOL
VOH
fOP
VCC * 0.7
V
IOL = 2.1 mA
IOH = -0.8 mA
V
VCC - 0.8
V
2.75
2.0
MHz
µs
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
tRI
Input Rise Time
tFI
Input Fall Time
2.0
tCLH
tCLL
tCSH
tCSS
tDIS
tHDS
tCSN
tDIN
tHDN
tPD
Clock High Time
Clock Low Time
(Note 2)
(Note 2)
(Note 3)
155
155
240
176
50
Min CS High Time
CS Setup Time
Data Setup Time
HOLD Setup Time
CS Hold Time
90
155
50
Data Hold Time
HOLD Hold Time
Output Delay
90
CL = 200 pF
135
tDH
Output Hold Time
HOLD to Output Low Z
Output Disable Time
HOLD to Output High Z
Write Cycle Time
0
tLZ
240
290
240
10
tDF
CL = 200 pF
1–32 Bytes
tHZ
tWP
Capacitance TA = 25°C, f = 2.1/1 MHz (Note 4)
AC Test Conditions
Output Load
CL = 200 pF
0.1 * VCC – 0.9 * VCC
0.3 * VCC - 0.7 • VCC
Symbol
COUT
Test
Typ Max Units
Input Pulse Levels
Output Capacitance
Input Capacitance
3
2
8
6
pF
pF
Timing Measurement Reference Level
CIN
Note 1: Stress above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only, and functional operation of the
device at these or any other conditions above those indicated in the operational sections of the specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
Note 2: The fOP frequency specification specifies a minimum clock period of 1/fOP. Therefore, for every fOP clock cycle, tCLH + tCLL must be equal to or greater than 1/fOP. For
example, if the 2.1MHz period = 476ns and tCLH = 190ns, tCLL must be 286ns.
Note 3: CS must be brought high for a minimum of tCSH between consecutive instruction cycles.
Note 4: This parameter is periodically sampled and not 100% tested.
3
www.fairchildsemi.com
NM25C640 Rev. D.2
Low Voltage 2.7V ≤ VCC ≤ 4.5V Specifications
Operating Conditions
Absolute Maximum Ratings (Note 5)
Ambient Operating Temperature
NM25C640L/LZ
Ambient Storage Temperature
-65°C to +150°C
0°C to +70°C
-40°C to +85°C
-40°C to +125°C
All Input or Output Voltage with
Respect to Ground
NM25C640LZ/LZE
NM25C640LV
+6.5V to -0.3V
+300°C
Lead Temp. (Soldering, 10 sec.)
ESD Rating
Power Supply (VCC
)
2.7V–4.5V
2000V
DC and AC Electrical Characteristics 2.7V ≤ VCC ≤ 4.5V (unless otherwise specified)
25C640L/LE
25C640LV
25C640LZ/LZE
Symbol
ICC
Parameter
Operating Current
Standby Current
Part
Conditions
Min.
Max.
Min Max
Units
CS = VIL
3
3
mA
ICCSB
L
LZ
CS = VCC
10
1
10
N/A
µA
µA
IIL
Input Leakage
VIN = 0 to VCC
-1
-1
1
1
-1
-1
1
1
µA
µA
V
IOL
Output Leakage
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
SCK Frequency
Input Rise Time
Input Fall Time
VOUT = GND to VCC
VIL
-0.3
0.3 * VCC
-0.3
0.3 * VCC
VIH
VOL
VOH
fOP
tRI
0.7 * VCC VCC + 0.3
0.7 * VCC VCC + 0.3
V
IOL = 1.6 mA
0.4
0.4
V
IOH = –0.8 mA
VCC - 0.8
VCC - 0.8
V
2.1
1.0
MHz
µs
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
2.0
2.0
tFI
2.0
2.0
tCLH
tCLL
tCSH
tCSS
tDIS
tHDS
tCSN
tDIN
tHDN
tPD
Clock High Time
Clock Low Time
Min. CS High Time
CS Setup Time
(Note 6)
(Note 6)
(Note 7)
190
190
240
240
100
90
410
410
500
500
100
240
500
100
240
500
0
Data Setup Time
HOLD Setup Time
CS Hold Time
240
100
90
Data Hold Time
HOLD Hold Time
Output Delay
CL = 200 pF
240
tDH
tLZ
Output Hold Time
HOLD Output Low Z
Output Disable Time
HOLD to Output Hi Z
Write Cycle Time
0
100
240
100
15
240
500
240
15
tDF
CL = 200 pF
1-32 Bytes
tHZ
tWP
Capacitance TA = 25°C, f = 2.1/1 MHz (Note 8)
AC Test Conditions
Output Load
CL = 200pF
Symbol
COUT
Test
Typ Max Units
Input Pulse Levels
0.1 * VCC - 0.9 * VCC
0.3 * VCC - 0.7 * VCC
Output Capacitance
Input Capacitance
3
2
8
6
pF
pF
Timing Measurement Reference Level
CIN
Note 5: Stress above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only, and functional operation of the
device at these or any other conditions above those indicated in the operational sections of the specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
Note 6: The fOP frequency specification specifies a minimum clock period of 1/fOP. Therefore, for every fOP clock cycle, tCLH + tCLL must be equal to or greater than 1/fOP. For
example, if the 2.1MHz period = 476ns and tCLH = 190ns, tCLL must be 286ns.
Note 7: CS must be brought high for a minimum of tCSH between consecutive instruction cycles.
Note 8: This parameter is periodically sampled and not 100% tested.
4
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NM25C640 Rev. D.2
AC Test Conditions (Continued)
FIGURE 1. Synchronous Data Timing Diagram
t
V
CSH
IH
CS
V
IL
t
t
CSS
CSN
V
IH
t
t
SCK
SI
CLL
t
CLH
V
IL
t
DIS
DIN
V
IH
V
IL
t
t
DF
t
PD
DH
V
OH
SO
V
OL
DS500041-3
FIGURE 2. Hold Timing
SCK
t
t
t
t
HDN
HDS
HDN
HDS
HOLD
SO
t
t
LZ
HZ
DS500041-6
FIGURE 3. SPI Serial Interface
MASTER MCU
NM25C640
SI
DATA OUT (MOSI)
DATA IN (MISO)
SERIAL CLOCK (CLK)
SS0
SO
SCK
CS
SPI
SS1
SS2
SS3
SI
CHIP
SO
SCK
CS
SELECTION
SI
SO
SCK
CS
SI
SO
SCK
CS
DS500041-4
5
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NM25C640 Rev. D.2
Functional Description
TABLE 1. Instruction Set
Instruction Instruction
HOLD: The HOLD pin is used in conjunction with the CS to select
the device. Once the device is selected and a serial sequence is
underway, HOLD may be forced low to suspend further serial
communication with the device without resetting the serial se-
quence. Note that HOLD must be brought low while the SCK pin
is low. The device must remain selected during this sequence. To
resume serial communication HOLD is brought high while the
SCK pin is low. The SO pin is at a high impedance state during
HOLD.
Operation
Name
WREN
WRDI
Opcode
00000110
00000100
00000101
00000001
00000011
Set Write Enable Latch
Reset Write Enable Latch
Read Status Register
Write Status Register
RDSR
WRSR
READ
INVALID OP-CODE: After an invalid code is received, no data is
shifted into the NM25C640, and the SO data output pin remains
high impedance until a new CS falling edge reinitializes the serial
communication. See Figure 5 .
Read Data from Memory
Array
WRITE
00000010
Write Data to Memory Array
FIGURE 5. Invalid Op-Code
MASTER: The device that generates the serial clock is desig-
nated as the master. The NM25C640 can never function as a
master.
CS
SI
INVALID CODE
SLAVE: The NM25C640 always operates as a slave as the serial
clock pin is always an input.
TRANSMITTER/RECEIVER: The NM25C640 has separate pins
for data transmission (SO) and reception (SI).
SO
DS500041-7
MSB: The Most Significant Bit is the first bit transmitted and
received.
CHIPSELECT:ThechipisselectedwhenpinCSislow. Whenthe
chip is not selected, data will not be accepted from pin SI, and the
output pin SO is in high impedance.
SERIAL OP-CODE: The first byte transmitted after the chip is
selected with CS going low contains the op-code that defines the
operation to be performed.
PROTOCOL: When connected to the SPI port of a 68HC11
microcontroller, the NM25C640 accepts a clock phase of 0 and a
clockpolarityof0. TheSPIprotocolforthisdevicedefinesthebyte
transmitted on the SI and SO data lines for proper chip operation.
See Figure 4.
FIGURE 4. SPI Protocol
CS
…
SCK
…
SI
Bit 7 Bit 6
Bit 7
Bit 0
Bit 1
SO
…
Bit 0
DS500041-5
Data is clocked in on the positive SCK edge and out on the
negative SCK edge.
6
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NM25C640 Rev. D.2
Functional Description (Continued)
READ SEQUENCE: Reading the memory via the serial SPI link
requiresthefollowingsequence.TheCSlineispulledlowtoselect
the device. The READ op-code is transmitted on the SI line
followed by the high order address byte (A12–A8), and the low
order address byte (A7–A0). The leading three bits in the high
order address byte will be ignored. After this is done, data on the
SI line becomes don’t care. The data (D7–D0) at the address
specified is then shifted out on the SO line. If only one byte is to
be read, the CS line can be pulled back to the high level. It is
possible to continue the READ sequence as the byte adress is
automaticallyincrementedanddatawillcontinuetobeshiftedout.
Whenthehighestaddressisreached(1FFF), theaddresscounter
rollsovertolowestaddress(000)allowingtheentirememorytobe
read in one continuous READ cycle. See Figure 6.
TABLE 3. Block Write Protection Levels
Level
Status Register Bits
Array
Address
Protected
BP1
BP0
0
1
2
3
0
0
1
1
0
1
0
1
None
1800-1FFF
1000-1FFF
0000–1FFF
WRITE ENABLE (WREN): When VCC is applied to the chip, it
“powers up” in the write disable state. Therefore, all programming
modes must be preceded by a WRITE ENABLE (WREN) instruc-
tion. Additionally, the WP must be held high during a write engble
instruction. At the completion of a WRITE or WRSR cycle the
device is automatically returned to the write disable state. Note
that a WRITE DISABLE (WRD) instruction will also return the
device to the write disable state. See Figure 8.
FIGURE 6. Read Sequence
CS
Read
Byte H Byte L
SI
Op-Code Addr. n Addr. n
FIGURE 8. Write Enable
CS
Data
n
Data
n+1
Data
n+2
Data
n+3
SO
DS500041-8
SI
WREN Op-Code
READ STATUS REGISTER (RDSR) : The Read Status Register
(RDSR) instruction provides access to the status register is used
to interrogate the READY/BUSY and WRITE ENABLE status of
the chip. Two non-volatile status register bits are used to select
one of four levels of BLOCK WRITE PROTECTION. The status
register format is shown in Table 2.
SO
DS500041-10
WRITE DISABLE (WRDI): To protect against accidental data
disturbance the WRITE DISABLE (WRDI) instruction disables all
programming modes. See Figure 9.
TABLE 2. Status Register Format
FIGURE 9. Write Disable
Bit
7
Bit Bit
Bit Bit
Bit Bit Bit
6
5
4
3
2
1
0
CS
X
X
X
X
BP1
BP0 WEN RDY
X = Don't Care.
SI
WRDI Op-Code
StatusregisterBit0=0(RDY)indicatesthatthedeviceisREADY;
Bit 0 = 1 indicates that a program cycle is in progress. Bit 1 = 0
(WEN) indicates that the device is not WRITE ENABLED; Bit 1 =
1 indicates that the device is WRITE ENABLED. Non-volatile
status register Bits 2 and 3 (BP0 and BP1) indicate the level of
BLOCK WRITE PROTECTION selected. The block write protec-
tion levels and corresponding status register control bits are
shown in Table 3. Note that if a RDSR instruction is executed
during a programming cycle only the RDY bit is valid. All
other bits are 1s. See Figure 7.
SO
DS500041-11
FIGURE 7. Read Status
CS
RDSR
Op-Code
SI
SR Data
MSB…LSB
SO
DS500041-9
7
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NM25C640 Rev. D.2
Functional Description (Continued)
At the completion of a WRITE cycle the device is automatically
returned to the write disable state.
WRITE SEQUENCE: To program the device, the WRITE PRO-
TECT (WP) pin must be held high and two separate instructions
must be executed. The chip must first be write enabled via the
WRITE ENABLE instruction and then a WRITE instruction must
be executed. Moreover, the address of the memory location(s) to
be programmed must be outside the protected address field
selected by the Block Write Protection Level. See Table 3.
If the device is not WRITE enabled, the device will ignore the
WRITE instruction and return to the standby state when CS is
forced high. A new CS falling edge is required to re-initialize the
serial communication.
WRITE STATUS REGISTER (WRSR): The WRITE STATUS
REGISTER (WRSR) instruction is used to program the non-
volatile status register Bits 2 and 3 (BP0 and BP1). The WRITE
PROTECT (WP) pin must be held high and two separate instruc-
tions must be executed. The chip must first be write enabled via
the WRITE ENABLE instruction and then a WRSR instruction
must be executed.
A WRITE command requires the following sequence. The CS line
is pulled low to select the device, then the WRITE op-code is
transmitted on the SI line followed by the high order address byte
(A12-A8) and the low order address byte (A7–A0). The leading
fivebitsinthehighorderaddressbytewillbeignored.Theaddress
is followed by the data (D7–D0) to be written. Programming will
start after the CS pin is forced back to a high level. Note that the
LOW to HIGH transition of the CS pin must occur during the SCK
low time immediately after clocking in the D0 data bit. See Figure
10.
The WRSR command requires the following sequence. The CS
line is pulled low to select the device and then the WRSR op-code
is transmitted on the SI line followed by the data to be pro-
grammed. See Figure 12.
FIGURE 10. End of WRITE Sequence
FIGURE 12. Write Status Register
CS
CS
SCK
WRSR
Op-Code
SR Data
xxxxBP1BP0xx
SI
D2
D1
D0
SI
SO
SO
DS500041-14
DS500041-12
Note that the first four bits are don’t care bits followed by BP1 and
BP0 then two additional don’t care bits. Programming will start
after the CS pin is forced back to a high level. As in the WRITE
instruction the LOW to HIGH transition of the CS pin must occur
duringtheSCKlowtimeimmediatelyafterclockinginthelastdon’t
care bit. See Figure 13.
The READY/BUSY status of the device can be determined by
executing a READ STATUS REGISTER (RDSR) instruction. Bit 0
= 1 indicates that the WRITE cycle is still in progress and Bit 0 =
0 indicates that the WRITE cycle has ended. During the WRITE
programming cycle (Bit 0 = 1) only the READ STATUS REGIS-
TER instruction is enabled.
FIGURE 13. Start WRSR Condition
The NM25C640 is capable of a 32 byte PAGE WRITE operation.
Afterreceiptofeachbyteofdatathefiveloworderaddressbitsare
internally incremented by one. The eight high order bits of the
address will remain constant. If the master should transmit more
than 32 bytes of data, the address counter will “roll over,” and the
previously loaded data will be reloaded. See Figure 11.
CS
SCK
FIGURE 11. 32 Byte Page Write
BP0
SI
CS
Write
Byte H Byte L
Data
(n)
Data
(n+1)
Data
(n+2)
Data
(n+3)
Data
(n+31)
. . .
SO
SI
DS500041-15
Op-Code Addr (n) Addr (n)
The READY/BUSY status of the device can be determined by
executing a READ STATUS REGISTER (RDSR) instruction. Bit 0
= 1 indicates that the WRSR cycle is still in progress and Bit 0 =
0 indicates that the WRSR cycle has ended.
SO
DS500041-13
At the completion of a WRITE cycle the device is automatically
returned to the write disable state.
8
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NM25C640 Rev. D.2
Physical Dimensions inches (millimeters) unless otherwise noted
0.189 - 0.197
(4.800 - 5.004)
8
7
6
5
0.228 - 0.244
(5.791 - 6.198)
1
2
3
4
Lead #1
IDENT
0.150 - 0.157
0.053 - 0.069
(1.346 - 1.753)
(3.810 - 3.988)
0.010 - 0.020
(0.254 - 0.508)
0.004 - 0.010
(0.102 - 0.254)
x 45°
8° Max, Typ.
All leads
Seating
Plane
0.04
0.0075 - 0.0098
(0.190 - 0.249)
Typ. All Leads
(0.102)
All lead tips
0.014
(0.356)
0.016 - 0.050
(0.406 - 1.270)
Typ. All Leads
0.050
(1.270)
Typ
0.014 - 0.020
(0.356 - 0.508)
Typ.
Molded Small Out-Line Package (M8)
Package Number M08A
0.373 - 0.400
(9.474 - 10.16)
0.090
(2.286)
8
7
0.032 ± 0.005
(0.813 ± 0.127)
8
7
6
5
4
0.092
(2.337)
RAD
DIA
0.250 - 0.005
Pin #1
IDENT
+
Pin #1 IDENT
(6.35 ± 0.127)
1
Option 1
1
2
3
Option 2
0.280
MIN
0.040
(1.016)
Typ.
(7.112)
0.030
0.145 - 0.200
(3.683 - 5.080)
0.039
(0.991)
MAX
(0.762)
0.300 - 0.320
(7.62 - 8.128)
20° ± 1°
0.130 ± 0.005
(3.302 ± 0.127)
0.125 - 0.140
95° ± 5°
(3.175 - 3.556)
0.065
(1.651)
0.125
(3.175)
DIA
0.020
90° ± 4°
Typ
0.009 - 0.015
(0.229 - 0.381)
(0.508)
Min
NOM
0.018 ± 0.003
(0.457 ± 0.076)
+0.040
-0.015
0.325
0.100 ± 0.010
+1.016
-0.381
8.255
(2.540 ± 0.254)
0.045 ± 0.015
(1.143 ± 0.381)
0.060
(1.524)
0.050
(1.270)
Molded Dual-In-Line Package (N)
Package Number N08E
9
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NM25C640 Rev. D.2
Life Support Policy
Fairchild's products are not authorized for use as critical components in life support devices or systems without the express written
approval of the President of Fairchild Semiconductor Corporation. As used herein:
1. Life support devices or systems are devices or systems which,
(a)areintendedforsurgicalimplantintothebody,or(b)support
or sustain life, and whose failure to perform, when properly
used in accordance with instructions for use provided in the
labeling, can be reasonably expected to result in a significant
injury to the user.
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably ex-
pected to cause the failure of the life support device or system,
or to affect its safety or effectiveness.
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Fax:
Tel:
Tel:
Tel:
Tel:
+44 (0) 1793-856858
8/F, Room 808, Empire Centre
68 Mody Road, Tsimshatsui East
Kowloon. Hong Kong
Tel; +852-2722-8338
Fax: +852-2722-8383
4F, Natsume Bldg.
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English
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+49 (0) 8141-6102-0
+44 (0) 1793-856856
+33 (0) 1-6930-3696
+39 (0) 2-249111-1
2-18-6, Yushima, Bunkyo-ku
Tokyo, 113-0034 Japan
Tel: 81-3-3818-8840
Fax: 81-3-3818-8841
Fairchild does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and Fairchild reserves the right at any time without notice to change said circuitry and specifications.
10
www.fairchildsemi.com
NM25C640 Rev. D.2
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