MOC8106VM [FAIRCHILD]
Phototransistor Optocouplers; 光电晶体管光耦合器
| 型号： | MOC8106VM |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Phototransistor Optocouplers |
| 文件： | 总10页 (文件大小：268K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
May 2008
CNY171M, CNY172M, CNY173M, CNY174M,
CNY17F1M, CNY17F2M, CNY17F3M, CNY17F4M,
MOC8106M, MOC8107M
Phototransistor Optocouplers
Features
Description
■ UL recognized (File # E90700, Vol. 2)
The CNY17XM, CNY17FXM and MOC810XM devices
consist of a Gallium Arsenide IRED coupled with an NPN
phototransistor in a dual in-line package.
■ VDE recognized
– Add option V (e.g., CNY17F2VM)
– File #102497
■ Current transfer ratio in select groups
■ High BV
: 70V minimum (CNY17XM, CNY17FXM,
CEO
MOC810XM)
■ Closely matched current transfer ratio (CTR)
minimizes unit-to-unit variation.
Package Outlines
■ Very low coupled capacitance along with no chip to
pin 6 base connection for minimum noise
susceptability (CNY17FXM, MOC810XM)
Applications
■ Power supply regulators
■ Digital logic inputs
■ Microprocessor inputs
■ Appliance sensor systems
■ Industrial controls
Schematics
1
2
6
1
2
6
BASE
ANODE
NC
ANODE
CATHODE
5 COLLECTOR
4 EMITTER
CATHODE
5 COLLECTOR
4 EMITTER
3
3
NC
NC
CNY17F1M/2M/3M/4M
MOC8106M/7M
CNY171M/2M/3M/4M
©2006 Fairchild Semiconductor Corporation
www.fairchildsemi.com
CYN17XM, CNY17FXM, MOC810XM Rev. 1.0.7
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
Parameters
Value
Units
TOTAL DEVICE
T
Storage Temperature
Operating Temperature
Lead Solder Temperature
-40 to +150
-40 to +100
260 for 10 sec
250
°C
°C
STG
T
OPR
T
°C
SOL
P
Total Device Power Dissipation @ 25°C (LED plus detector)
Derate Linearly From 25°C
mW
mW/°C
D
2.94
EMITTER
I
Continuous Forward Current
Reverse Voltage
60
6
mA
V
F
V
R
I (pk)
Forward Current – Peak (1µs pulse, 300pps)
LED Power Dissipation 25°C Ambient
Derate Linearly From 25°C
1.5
120
1.41
A
F
P
mW
mW/°C
D
DETECTOR
I
Continuous Collector Current
Collector-Emitter Voltage
50
70
mA
V
C
V
V
CEO
ECO
Emitter Collector Voltage
7
V
P
Detector Power Dissipation @ 25°C
Derate Linearly from 25°C
150
1.76
mW
mW/°C
D
©2006 Fairchild Semiconductor Corporation
CYN17XM, CNY17FXM, MOC810XM Rev. 1.0.7
www.fairchildsemi.com
2
(1)
Electrical Characteristics (T = 25°C Unless otherwise specified.)
A
Individual Component Characteristics
Symbol
EMITTER
Parameters
Test Conditions
Device
Min. Typ. Max. Units
V
Input Forward Voltage I = 60mA
CNY17XM,
CNY17FXM
1.0
1.0
1.35
1.65
1.50
V
F
F
I = 10mA
MOC810XM
1.15
18
F
C
Capacitance
V = 0 V, f = 1.0MHz
All
All
pF
µA
J
F
I
Reverse Leakage
Current
V = 6V
0.001
10
R
R
DETECTOR
Breakdown Voltage
Collector to Emitter I = 1.0mA, I = 0
BV
BV
BV
All
CNY171M/2M/3M/4M
All
70
70
7
100
120
10
CEO
CBO
ECO
C
F
V
Collector to Base
I = 10µA, I = 0
C F
Emitter to Collector I = 100µA, I = 0
E
F
Leakage Current
I
I
Collector to Emitter
CEO
V
= 10 V, I = 0
All
1
50
20
nA
nA
CE
CB
F
Collector to Base
V
= 10 V, I = 0
CNY171M/2M/3M/4M
CBO
F
Capacitance
C
Collector to Emitter
V
V
V
= 0, f = 1MHz
= 0, f = 1MHz
= 0, f = 1MHz
All
8
pF
pF
pF
CE
CB
EB
CE
CB
EB
C
Collector to Base
Emitter to Base
CNY171M/2M/3M/4M
CNY171M/2M/3M/4M
20
10
C
Isolation Characteristics
Symbol Characteristic
Test Conditions
Min.
Typ.*
Max.
Units
V
Input-Output Isolation Voltage f = 60 Hz, t = 1 sec.,
7500
Vac(pk)
ISO
(4)
I
≤ 2µA
I-O
(4)
11
R
C
Isolation Resistance
Isolation Capacitance
V
V
= 500 VDC
10
Ω
ISO
ISO
I-O
I-O
(4)
= Ø, f = 1MHz
0.2
pF
(3)
Transfer Characteristics (T = 25°C Unless otherwise specified.)
A
Symbol
DC Characteristics
Test Conditions
Min. Typ.* Max. Units
COUPLED
(2)
(CTR)
Output Collector
Current
MOC8106M
MOC8107M
CNY17F1M
CNY17F2M
CNY17F3M
CNY17F4M
CNY171M
CNY172M
CNY173M
CNY174M
I = 10mA, V = 10V
50
100
40
150
300
80
%
F
CE
I = 10mA, V = 5V
F
CE
63
125
200
320
80
100
160
40
63
125
200
320
0.4
100
160
V
Collector-Emitter CNY17XM/FXM
Saturation Voltage
I
I
= 2.5mA, I = 10mA
V
CE(sat)
C
C
F
MOC8106M/7M
= 500µA, I = 5.0mA
F
*All typicals at T = 25°C
A
©2006 Fairchild Semiconductor Corporation
CYN17XM, CNY17FXM, MOC810XM Rev. 1.0.7
www.fairchildsemi.com
3
(1)
Electrical Characteristics (Continued) (T = 25°C Unless otherwise specified.)
A
(3)
Transfer Characteristics (Continued)
Symbol
AC Characteristics(4)
Test Conditions
Min. Typ.* Max. Units
NON-SATURATED SWITCHING TIME
t
Turn-On Time
All Devices
I
I
= 2.0mA, V = 10V, R = 100Ω
2
3
10
µs
on
C
C
CC
L
t
Turn-Off Time
Delay Time
Rise Time
All Devices
= 2.0mA, V = 10V, R = 100Ω
10
µs
µs
µs
off
CC
L
t
t
CNY17XM/XFM
All Devices
I = 10mA, V = 5V, R = 75Ω
5.6
d
F
CC
L
t
I
= 2.0mA, V = 10V, R = 100Ω
1
2
r
C
CC
L
CNY17XM/FXM
CNY17XM/FXM
All Devices
I = 10mA, V = 5V, R = 75Ω
4.0
4.1
F
CC
L
Storage Time
Fall Time
I = 10mA, V = 5V, R = 75Ω
µs
µs
s
F
CC
L
t
I
= 2.0mA, V = 10V, R = 100Ω
f
C
CC
L
CNY17XM/FXM
I = 10mA, V = 5V, R = 75Ω
3.5
F
CC
L
SATURATED SWITCHING TIMES
t
Turn-on Time
CNY171M/F1M
I = 20mA, V = 5V, R = 1kΩ
5.5
8.0
µs
µs
µs
µs
µs
µs
on
F
CC
L
CNY172M/3M/4M
CNY17F2M/F3M/F4M
I = 10mA, V
= 5V, R = 1kΩ
L
F
CC
t
Rise Time
CNY171M/F1M
I = 20mA, V = 5V, R = 1kΩ
4.0
6.0
r
F
CC
L
CNY172M/3M/4M
CNY17F2M/F3M/F4M
I = 10mA, V
= 5V, R = 1kΩ
L
F
CC
t
Delay Time
Turn-off Time
Fall Time
CNY171M/F1M
I = 20mA, V = 5V, R = 1kΩ
5.5
8.0
d
F
CC
L
CNY172M/3M/4M
CNY17F2M/F3M/F4M
I = 10mA, V = 5V, R = 1kΩ
F CC L
t
CNY171M/F1M
I = 20mA, V = 0.4V
34
39
off
F
CE
CNY172M/3M/4M
CNY17F2M/F3M/F4M
I = 10mA, V = 0.4V
F CE
t
CNY171M/F1M
I = 20mA, V = 5V, R = 1kΩ
20.0
24.0
f
F
CC
L
CNY172M/3M/4M
CNY17F2M/F3M/F4M
I = 10mA, V = 5V, R = 1kΩ
F CC L
t
Storage Time
CNY171M/F1M
I = 20mA, V = 5V, R = 1kΩ
34.0
39.0
s
F
CC
L
CNY172M/3M/4M
I = 10mA, V = 5V, R = 1kΩ
F CC L
CNY17F2M/F3M/F4M
*All typicals at T = 25°C
A
Notes:
1. Always design to the specified minimum/maximum electrical limits (where applicable).
2. Current Transfer Ratio (CTR) = I /I x 100%.
C F
3. For test circuit setup and waveforms, refer to Figures 10 and 11.
4. For this test, Pins 1 and 2 are common, and Pins 4 are 5 are common.
©2006 Fairchild Semiconductor Corporation
CYN17XM, CNY17FXM, MOC810XM Rev. 1.0.7
www.fairchildsemi.com
4
Typical Performance Characteristics
Fig. 2 Normalized CTR vs. Ambient Temperature
1.4
1.2
1.0
0.8
0.6
0.4
0.2
Fig. 1 Normalized CTR vs. Forward Current
1.6
V
T
= 5.0V
= 25˚C
Normalized to
= 10mA
CE
A
I
F
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
I
= 5mA
F
I
I
= 10mA
F
= 20mA
F
Normalized to:
= 10mA
I
F
T
A
= 25˚C
0
2
4
6
8
10
12
14
16
18
20
-60
-40
-20
0
20
40
60
80
100
I
– FORWARD CURRENT (mA)
F
T
– AMBIENT TEMPERATURE (˚C)
A
Fig. 3 CTR vs. RBE (Unsaturated)
Fig. 4 CTR vs. RBE (Saturated)
1.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
I
F
= 20mA
I
= 10mA
F
I
= 5mA
V
= 0.3V
F
CE
I
= 20mA
F
I
= 10mA
= 5mA
F
I
F
V
= 5.0V
CE
10
100
1000
10
100
1000
R
BE
– BASE RESISTANCE (kΩ)
R
BE
– BASE RESISTANCE (kΩ)
Fig. 5 Switching Speed vs. Load Resistor
1000
100
10
Fig. 6 Normalized t vs. R
on
BE
I
V
T
= 10mA
F
= 10V
5.0
CC
= 25˚C
A
V
I
R
10V
= 2mA
= 100Ω
CC =
C
L
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
T
f
T
off
T
on
T
r
1
10
100
1000
10000
100000
0.1
R
BE
– BASE RESISTANCE (kΩ)
0.1
1
10
100
R – LOAD RESISTOR (kΩ)
©2006 Fairchild Semiconductor Corporation
CYN17XM, CNY17FXM, MOC810XM Rev. 1.0.7
www.fairchildsemi.com
5
Typical Performance Characteristics (Continued)
Fig. 8 LED Forward Voltage vs. Forward Current
1.8
Fig. 7 Normalized t vs. R
off
BE
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1.7
1.6
1.5
1.4
T
= -55°C
= 25°C
= 100°C
A
1.3
1.2
1.1
1.0
T
V
10V
A
CC =
= 2mA
I
C
R
= 100Ω
L
T
A
10
100
1000
10000
100000
1
10
100
R
– BASE RESISTANCE (k Ω)
BE
I
– LED FORWARD CURRENT (mA)
F
Fig. 9 Collector-Emitter Saturation Voltage vs Collector Current
100
T
A
= 25˚C
10
1
I
F
= 2.5mA
0.1
I
F
= 20mA
0.01
0.001
I
F
= 5mA
I
F
= 10mA
0.01
0.1
1
10
I
- COLLECTOR CURRENT (mA)
C
VCC
INPUT PULSE
10%
90%
RL
IC
OUTPUT PULSE
IF
INPUT
OUTPUT (V
)
CE
td
ts
tf
tr
ton
toff
Figure 11. Switching Time Waveforms
Figure 10. Switching Time Test Circuit
©2006 Fairchild Semiconductor Corporation
CYN17XM, CNY17FXM, MOC810XM Rev. 1.0.7
www.fairchildsemi.com
6
Package Dimensions
Through Hole
Surface Mount
0.350 (8.89)
0.320 (8.13)
0.350 (8.89)
0.320 (8.13)
Pin 1 ID
PIN 1 ID
0.390 (9.90)
0.332 (8.43)
0.260 (6.60)
0.240 (6.10)
0.260 (6.60)
0.240 (6.10)
0.070 (1.77)
0.040 (1.02)
0.070 (1.77)
0.040 (1.02)
0.320 (8.13)
0.320 (8.13)
0.014 (0.36)
0.014 (0.36)
0.010 (0.25)
0.010 (0.25)
0.200 (5.08)
0.115 (2.93)
0.200 (5.08)
0.115 (2.93)
0.012 (0.30)
0.008 (0.20)
0.100 (2.54)
0.015 (0.38)
0.025 (0.63)
0.020 (0.51)
0.100 [2.54]
0.020 (0.50)
0.016 (0.41)
15°
0.035 (0.88)
0.006 (0.16)
0.100 (2.54)
0.020 (0.50)
0.016 (0.41)
0.012 (0.30)
0.4" Lead Spacing
Recommended Pad Layout for
Surface Mount Leadform
0.350 (8.89)
0.320 (8.13)
0.070 (1.78)
PIN 1 ID
0.060 (1.52)
0.260 (6.60)
0.240 (6.10)
0.425 (10.79)
0.100 (2.54)
0.305 (7.75)
0.030 (0.76)
0.070 (1.77)
0.040 (1.02)
0.014 (0.36)
0.010 (0.25)
0.200 (5.08)
0.115 (2.93)
0.100 (2.54)
0.015 (0.38)
0.012 (0.30)
0.008 (0.21)
0.100 [2.54]
0.020 (0.50)
0.016 (0.41)
0.425 (10.80)
0.400 (10.16)
Note:
All dimensions are in inches (millimeters)
©2006 Fairchild Semiconductor Corporation
CYN17XM, CNY17FXM, MOC810XM Rev. 1.0.7
www.fairchildsemi.com
7
Ordering Information
Order Entry Identifier
(Example)
Option
Description
No option
CYN171M
CYN171SM
Standard Through Hole Device
Surface Mount Lead Bend
Surface Mount; Tape and Reel
0.4" Lead Spacing
S
SR2
T
CYN171SR2M
CYN171TM
V
CYN171VM
VDE 0884
TV
CYN171TVM
CYN171SVM
CYN171SR2VM
VDE 0884, 0.4" Lead Spacing
VDE 0884, Surface Mount
VDE 0884, Surface Mount, Tape and Reel
SV
SR2V
Marking Information
1
2
CYN17-1
X YY Q
6
V
5
3
4
Definitions
1
2
Fairchild logo
Device number
VDE mark (Note: Only appears on parts ordered with VDE
option – See order entry table)
3
4
5
6
One digit year code, e.g., ‘7’
Two digit work week ranging from ‘01’ to ‘53’
Assembly package code
©2006 Fairchild Semiconductor Corporation
CYN17XM, CNY17FXM, MOC810XM Rev. 1.0.7
www.fairchildsemi.com
8
Carrier Tape Specification
12.0 ± 0.1
2.0 ± 0.05
4.5 ± 0.20
Ø1.5 MIN
1.75 ± 0.10
0.30 ± 0.05
4.0 ± 0.1
11.5 ± 1.0
24.0 ± 0.3
9.1 ± 0.20
21.0 ± 0.1
Ø1.5 ± 0.1/-0
10.1 ± 0.20
0.1 MAX
User Direction of Feed
Reflow Profile
300
280
260
240
220
200
180
160
140
120
100
80
260°C
>245°C = 42 Sec
Time above
183°C = 90 Sec
°C
1.822°C/Sec Ramp up rate
60
40
33 Sec
20
0
0
60
120
180
270
360
Time (s)
©2006 Fairchild Semiconductor Corporation
CYN17XM, CNY17FXM, MOC810XM Rev. 1.0.7
www.fairchildsemi.com
9
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global
subsidiaries, and is not intended to be an exhaustive list of all such trademarks.
ACEx®
PDP SPM™
The Power Franchise®
FPS™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK®
EfficentMax™
EZSWITCH™ *
™
Power-SPM™
PowerTrench®
Programmable Active Droop™
QFET®
F-PFS™
FRFET®
Global Power ResourceSM
Green FPS™
Green FPS™ e-Series™
GTO™
TinyBoost™
TinyBuck™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
µSerDes™
QS™
Quiet Series™
RapidConfigure™
Saving our world, 1mW at a time™
SmartMax™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
SMART START™
SPM®
®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
MicroPak™
UHC®
Ultra FRFET™
UniFET™
VCX™
Fairchild®
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC®
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
OPTOPLANAR®
FAST®
VisualMax™
®
SyncFET™
FastvCore™
®
FlashWriter® *
* EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS
PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems 2. A critical component in any component of a life support,
which, (a) are intended for surgical implant into the body or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in a significant injury of the user.
device, or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
Advance Information
Formative / In Design
This datasheet contains preliminary data; supplementary data will be published
at a later date. Fairchild Semiconductor reserves the right to make changes at
any time without notice to improve design.
Preliminary
First Production
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve the design.
No Identification Needed
Obsolete
Full Production
This datasheet contains specifications on a product that is discontinued by
Fairchild Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I34
©2006 Fairchild Semiconductor Corporation
CYN17XM, CNY17FXM, MOC810XM Rev. 1.0.7
www.fairchildsemi.com
10
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