MBR1045 [FAIRCHILD]

10 Ampere Schottky Barrier Rectifiers; 10安培肖特基势垒整流器
MBR1045
型号: MBR1045
厂家: FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述:

10 Ampere Schottky Barrier Rectifiers
10安培肖特基势垒整流器

二极管 局域网
文件: 总3页 (文件大小:48K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MBR1035 - MBR1060  
.412(10.5)  
.185(4.70)  
.175(4.44)  
DIA  
Features  
MAX  
.154(3.91)  
.148(3.74)  
.055(1.40)  
.045(1.14)  
Low power loss, high efficiency.  
High surge capacity.  
For use in low voltage, high frequency  
inverters, free wheeling, and polarity  
protection applications.  
.113(2.87)  
.103(2.62)  
.27(6.86)  
.23(5.84)  
.594(15.1)  
.587(14.91)  
Dimensions  
are in:  
inches (mm)  
1
2
.16(4.06)  
.14(3.56)  
Metal silicon junction, majority carrier  
conduction.  
.11(2.79)  
.10(2.54)  
.56(14.22)  
.53(13.46)  
High current capacity, low forward  
voltage drop.  
.037(0.94)  
.027(0.68)  
Guard ring for over voltage protection.  
TO-220AC  
PIN 1 +  
.205(5.20)  
.195(4.95)  
+
.025(0.64)  
.014(0.35)  
CASE  
PIN 2 -  
CASE Positive  
10 Ampere Schottky Barrier Rectifiers  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
IO  
if(repetitive)  
Average Rectified Current  
10  
A
Peak Repetitive Forward Current  
(Rated VR , Square Wave, 20 KHz) @ TA = 135°C  
Peak Forward Surge Current  
20  
A
A
if(surge)  
8.3 ms single half-sine-wave  
150  
Superimposed on rated load (JEDEC method)  
PD  
Total Device Dissipation  
Derate above 25°C  
Thermal Resistance, Junction to Ambient  
2.0  
16.6  
60  
W
mW/°C  
°C/W  
RθJA  
RθJL  
Tstg  
TJ  
Thermal Resistance, Junction to Lead  
Storage Temperature Range  
2.0  
°C/W  
°C  
-65 to +175  
-65 to +150  
Operating Junction Temperature  
°C  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
Electrical Characteristics  
TA = 25°C unless otherwise noted  
Parameter  
Device  
Units  
1035  
35  
1045  
45  
1050  
50  
1060  
60  
Peak Repetitive Reverse Voltage  
Maximum RMS Voltage  
V
V
V
24  
31  
35  
42  
35  
45  
50  
60  
DC Reverse Voltage  
(Rated VR)  
10,000  
V/uS  
Voltage Rate of Change (Rated VR)  
Maximum Reverse Current  
0.1  
15  
mA  
mA  
@ rated VR  
TA = 25°C  
TA = 125°C  
Maximum Forward Voltage  
F = 10 A, TC = 25°C  
-
0.80  
0.70  
0.95  
0.85  
V
V
V
V
I
0.57  
0.84  
0.72  
IF = 10 A, TC = 125°C  
IF = 20 A, TC = 25°C  
IF = 20 A, TC = 125°C  
Peak Repetitive Reverse Surge  
Current  
1.0  
0.5  
A
2.0 us Pulse Width, f = 1.0 KHz  
MBR1035 - MBR1060, Rev. A  
1999 Fairchild Semiconductor Corporation  
Schotty Barrier Rectifier  
(continued)  
Typical Characteristics  
Forward Current Derating Curve  
Non-Repetitive Surge Current  
12  
175  
150  
125  
100  
75  
10  
MBR1035-MBR1045  
8
MBR1050-MBR1060  
SINGLE PHASE  
HALF WAVE  
60HZ  
6
4
2
0
RESISTIVE OR  
INDUCTIVE LOAD  
.375" (9.00mm) LOAD  
LENGTHS  
50  
25  
0
25  
50  
75  
100  
125  
150  
175  
0.1  
1
10  
100  
º
AMBIENT TEMPERATURE ( C)  
NUMBER OF CYCLES AT 60Hz  
Forward Characteristics  
Reverse Characteristics  
50  
10  
20  
10  
MBR1035-MBR1045  
T
= 25ºC  
T
= 150ºC  
A
A
T
= 125ºC  
A
1
MBR1050-MBR1060  
MBR1035-MBR1045  
MBR1035-MBR1045  
MBR1050-MBR1060  
1
T
= 75ºC  
A
0.1  
0.1  
0.01  
0.001  
T
= 25ºC  
A
Pulse Width = 300µS  
2% Duty Cycle  
MBR1050-MBR1060  
0.01  
0
20  
40  
60  
80  
100  
120  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)  
FORWARD VOLTAGE (V)  
Typical Junction Capacitance  
Transient Thermal Impedance  
5000  
100  
2000  
1000  
500  
10  
1
MBR1035-MBR1045  
MBR1050-MBR1060  
200  
100  
0.1  
0.1  
1
10  
100  
0.01  
0.1  
1
10  
100  
REVERSE VOLTAGE (V)  
T. PULSE DURATION (sec.)  
MBR1035 - MBR1060, Rev. A  
TRADEMARKS  
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is  
not intended to be an exhaustive list of all such trademarks.  
ACEx™  
CoolFET™  
ISOPLANAR™  
MICROWIRE™  
POP™  
PowerTrench™  
QS™  
CROSSVOLT™  
E2CMOSTM  
FACT™  
FACT Quiet Series™  
Quiet Series™  
SuperSOT™-3  
SuperSOT™-6  
SuperSOT™-8  
TinyLogic™  
FAST®  
FASTr™  
GTO™  
HiSeC™  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER  
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD  
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT  
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT  
RIGHTS, NOR THE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.  
As used herein:  
1. Life support devices or systems are devices or  
systems which, (a) are intended for surgical implant into  
the body, or (b) support or sustain life, or (c) whose  
failure to perform when properly used in accordance  
with instructions for use provided in the labeling, can be  
reasonably expected to result in significant injury to the  
user.  
2. A critical component is any component of a life  
support device or system whose failure to perform can  
be reasonably expected to cause the failure of the life  
support device or system, or to affect its safety or  
effectiveness.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
Advance Information  
Formative or  
In Design  
This datasheet contains the design specifications for  
product development. Specifications may change in  
any manner without notice.  
Preliminary  
First Production  
This datasheet contains preliminary data, and  
supplementary data will be published at a later date.  
Fairchild Semiconductor reserves the right to make  
changes at any time without notice in order to improve  
design.  
No Identification Needed  
Obsolete  
Full Production  
This datasheet contains final specifications. Fairchild  
Semiconductor reserves the right to make changes at  
any time without notice in order to improve design.  
Not In Production  
This datasheet contains specifications on a product  
that has been discontinued by Fairchild semiconductor.  
The datasheet is printed for reference information only.  

相关型号:

MBR1045-10HE3/45

DIODE SCHOTTKY ARRAY TO220AC
VISHAY

MBR1045-E3/45

Schottky Barrier Rectifier
VISHAY

MBR1045-G

Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 45V V(RRM), Silicon, TO-220AC, LEAD FREE, PLASTIC PACKAGE-2
SENSITRON

MBR1045-HE3/45

DIODE 10 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AC, ROHS COMPLIANT, PLASTIC PACKAGE-2, Rectifier Diode
VISHAY

MBR1045BCT

10A Surface Mount High Power Schottky Barrier Rectifiers
LGE

MBR1045BF

SCHOTTKY BARRIER DIODE
JSMC

MBR1045BFR

SCHOTTKY BARRIER DIODE
JSMC

MBR1045C

10A SCHOTTKY BARRIER
UTC

MBR1045C-T

SCHOTTKY BARRIER RECTIFIERS
SHIKUES

MBR1045C-TF

SCHOTTKY BARRIER RECTIFIERS
SHIKUES

MBR1045C-Y

Dual Common Cathode Schottky Rectifier
TSC

MBR1045CA

10.0 Ampere Dual Common Anode Schottky Barrier Rectifier Diodes
THINKISEMI