LM336Z2.5 [FAIRCHILD]
Programmable Shunt Regulator; 可编程并联稳压器型号: | LM336Z2.5 |
厂家: | FAIRCHILD SEMICONDUCTOR |
描述: | Programmable Shunt Regulator |
文件: | 总6页 (文件大小:63K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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LM336-2.5/LM336B-2.5
Programmable Shunt Regulator
Features
Description
• Low Temperature Coefficient
The LM336-2.5/LM336B-2.5 integrated circuits are
• Guaranteed Temperature Stability 4mV Typical
• 0.2Ω Dynamic Impedance
• ±1.0% Initial Tolerance Available
• Easily Trimmed for Minimum Temperature Drift
precision 2.5V shunt regulators. The monolithic IC voltage
reference operates as a low temperature coefficient 2.5V
zener with 0.2W dynamic impedance. A third terminal on
the LM336-2.5/LM336B-2.5 allows the reference voltage
and temperature coefficient to be trimmed easily. LM336-
2.5/LM336B-2.5 are useful as a precision 2.5V low voltage
reference for digital voltmeters, power supplies or OP-AMP
circuitry. The 2.5V makes it convenient to obtain a stable
reference from low voltage supplies. Further, since the
LM336-2.5/LM336B-2.5 operate as shunt regulators, they
can be used as either a positive or negative voltage reference.
TO-92
1
1. Adj 2. + 3. -
Internal Block Diagram
+
2
R1
Q17
Q9
R5
R6
R7
Q8
Q7
C2
R4
Q16
C1
R8
R9
ADJUST
1
Q11
Q15
Q10
Q2
R10
Q4
Q6 Q12
Q14
Q18
Q13
Q1
Q5
Q3
R3
R2
_
3
Rev. 1.0.1
©2002 Fairchild Semiconductor Corporation
LM336-2.5/LM336B-2.5
Absolute Maximum Ratings
Parameter
Symbol
Value
15
Unit
mA
mA
°C
Reverse Current
I
R
Forward Current
I
10
F
Operating Temperature Range LM336-2.5/LM336B-2.5
Storage Temperature Range
T
OPR
0 ~ +70
- 60 ~ +150
T
STG
°C
Electrical Characteristics
(0°C < T < +70°C, unless otherwise specified)
A
LM336-2.5
LM336B-2.5
Parameter
Symbol
Conditions
T = +25°C
Unit
Min. Typ. Max. Min. Typ. Max.
Reverse Breakdown
Voltage
A
V
2.44 2.49 2.54 2.465 2.49 2.515
V
R
I
= 1mA
R
Reverse Breakdown
Change with Current
T = +25°C
A
∆V /∆I
-
2.6
10
-
2.6
6
mV
R
R
R
400uA ≤ I ≤ 10mA
R
Reverse Dynamic
Impedance
T = +25°C
A
Z
D
-
-
-
0.2
1.8
3
1
6
-
-
-
0.2
1.8
3
0.6
6
Ω
I
= 1mA
R
Temperature Stability
ST
I
= 1mA
mV
mV
T
R
Reverse Breakdown
Change with Current
∆V /∆I
400uA ≤ I ≤ 10mA
12
10
R
R
Reverse Dynamic
Impedance
Z
I
I
= 1mA
= 1mA
-
-
0.4
20
1.4
-
-
-
0.4
20
1.0
-
Ω
D
R
R
Long Term Stability
In Reference Voltage
ST
ppm/Khr
2
LM336-2.5/LM336B-2.5
Typical Performance Characteristics
Figure 1. Reverse Voltage Change
Figure 2. Reverse Characteristics
Figure 3. Temperature Drift
Figure 4. Forward Characteristics
3
LM336-2.5/LM336B-2.5
Mechanical Dimensions
Package
Dimensions in millimeters
TO-92
+0.25
–0.15
4.58
Reverse Current (mA)
0.46 ±0.10
+0.10
–0.05
1.27TYP
1.27TYP
0.38
[1.27 ±0.20
]
[1.27 ±0.20]
3.60 ±0.20
(R2.29)
4
LM336-2.5/LM336B-2.5
Ordering Information
Product Number
LM336Z2.5
Package
Operating Temperature
TO-92
0°C to +70°C
LM336BZ25
5
LM336-2.5/LM336B-2.5
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER
DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, and (c) whose failure to
perform when properly used in accordance with
instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury of the
user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
www.fairchildsemi.com
11/12/02 0.0m 001
Stock#DSxxxxxxxx
2002 Fairchild Semiconductor Corporation
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