KSP42BU [FAIRCHILD]
High Voltage Transistor; 高压晶体管
| 型号： | KSP42BU |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | High Voltage Transistor |
| 文件： | 总4页 (文件大小：42K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
KSP42/43
High Voltage Transistor
•
Collector-Emitter Voltage: V
=KSP42: 300V
KSP43: 200V
CEO
•
Collector Power Dissipation: P (max)=625mW
C
TO-92
1. Emitter 2. Base 3. Collector
1
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T =25°C unless otherwise noted
a
Symbol
Parameter
Value
Units
V
V
V
Collector Base Voltage
Collector-Emitter Voltage
CBO
: KSP42
: KSP43
300
200
V
V
CEO
EBO
: KSP42
: KSP43
300
200
V
V
Emitter-Base Voltage
Collector Current
6
500
V
I
mA
mW
°C
C
P
Collector Power Dissipation
Junction Temperature
Storage Temperature
625
C
T
T
150
J
-55 ~ 150
°C
STG
Electrical Characteristics T =25°C unless otherwise noted
a
Symbol
Parameter
Test Condition
Min.
Max.
Units
BV
Collector-Base Breakdown Voltage
I =100µA, I =0
CBO
CEO
EBO
C
E
: KSP42
: KSP43
300
200
V
V
BV
BV
* Collector -Emitter Breakdown Voltage
I =1mA, I =0
C B
: KSP42
: KSP43
300
200
V
V
Emitter-Base Breakdown Voltage
I =100µA, I =0
6
V
E
C
I
Collector Cut-off Current
: KSP42
CBO
V
V
=200V, I =0
=160V, I =0
E
100
100
nA
nA
CB
CB
E
: KSP43
I
Emitter Cut-off Current
: KSP42
EBO
V
V
=6V, I =0
=4V, I =0
C
100
100
nA
nA
BE
BE
C
: KSP43
h
* DC Current Gain
V
V
V
=10V, I =1mA
25
40
40
FE
CE
CE
CE
C
=10V, I =10mA
C
=10V, I =30mA
C
V
V
(sat)
(sat)
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
I =20mA, I =2mA
0.5
0.9
V
V
CE
BE
C
B
I =20mA, I =2mA
C
B
C
Output Capacitance
: KSP42
V
=20V, I =0
CB E
ob
f=1MHz
3
4
pF
pF
: KSP43
f
Current Gain Bandwidth Product
V
=20V, I =10mA
50
MHz
T
CE
C
f=100MHz
* Pulse Test: PW≤300µs, Duty Cycle≤2%
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
Typical Characteristics
1000
10
IC = 10 IB
VCE = 10V
VBE(sat)
1
100
VCE(sat)
0.1
10
0.01
1
10
100
1
10
100
IC[mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
100
10
1
120
100
IE = 0
f = 1MHz
VCE = 20V
80
60
40
20
0
0.1
1
10
100
1
10
100
IC[mA], COLLECTOR CURRENT
VCB [V], COLLECTOR-BASE VOLTAGE
Figure 3. Collector-Base Capacitance
Figure 4. Current Gain Bandwidth Product
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
Package Dimensions
TO-92
+0.25
–0.15
4.58
0.46 ±0.10
+0.10
–0.05
1.27TYP
1.27TYP
0.38
[1.27 ±0.20
]
[1.27 ±0.20]
3.60 ±0.20
(R2.29)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™
FACT™
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ActiveArray™
Bottomless™
CoolFET™
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DOME™
FACT Quiet series™ ISOPLANAR™
POP™
Stealth™
FAST®
LittleFET™
MicroFET™
MicroPak™
Power247™
PowerTrench®
QFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
FASTr™
GlobalOptoisolator™ MICROWIRE™
QS™
EcoSPARK™
E2CMOS™
EnSigna™
Across the board. Around the world.™
The Power Franchise™
GTO™
HiSeC™
I2C™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC®
OPTOPLANAR™
QT Optoelectronics™ TinyLogic™
Quiet Series™
TruTranslation™
RapidConfigure™
RapidConnect™
UHC™
UltraFET®
SILENT SWITCHER® VCX™
SMART START™
Programmable Active Droop™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. I1
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