KSD288YTU_NL [FAIRCHILD]
Power Bipolar Transistor, 3A I(C), 55V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, LEAD FREE, TO-220, 3 PIN;
| 型号： | KSD288YTU_NL |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Power Bipolar Transistor, 3A I(C), 55V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, LEAD FREE, TO-220, 3 PIN 局域网 放大器 晶体管 |
| 文件： | 总4页 (文件大小：41K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
KSD288
Power Regulator
Low Frequency High Power Amplifier
•
•
Collector-Base Voltage : V
=80V
CBO
Collector Dissipation : P =25W(T =25°C)
C
C
TO-220
1.Base 2.Collector 3.Emitter
1
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T =25°C unless otherwise noted
C
Symbol
Parameter
Value
Units
V
V
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
80
V
V
CBO
CEO
EBO
55
5
V
I
3
25
A
C
P
Collector Dissipation (T =25°C)
W
°C
°C
C
C
T
T
Junction Temperature
Storage Temperature
150
J
- 55 ~ 150
STG
Electrical Characteristics T =25°C unless otherwise noted
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
V
BV
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
I =500µA, I =0
80
55
5
CBO
CEO
EBO
C
E
BV
BV
I =10mA,I =0
V
C
B
I =500µA, I =0
V
E
C
I
V
=50V,I =0
50
240
1
µA
CBO
CB
CE
E
h
DC Current Gain
V
=5V,I =0.5A
40
FE
C
V
(sat)
Collector-Emitter Saturation Voltage
I =1A, I =0.1A
V
CE
C
B
h
Classification
FE
Classification
R
O
Y
h
40 ~ 80
70 ~ 140
120 ~ 240
FE
©2000 Fairchild Semiconductor International
Rev. A, February 2000
Typical Characteristics
2.0
10000
1000
100
IB = 10mA
VCE = 5V
1.8
IB = 9mA
1.6
IB = 8mA
1.4
IB = 7mA
1.2
1.0
0.8
0.6
0.4
0.2
IB = 6mA
IB = 5mA
IB = 4mA
IB = 3mA
IB = 2mA
IB = 1mA
10
0.01
0.1
1
10
0
2
4
6
8
10
12
14
16
18
20
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
Figure 2. DC current Gain
10
1000
100
10
f = 1MHz
IE=0
Ic = 10 IB
1
VBE(sat)
0.1
1
0.01
1
10
100
0.1
1
10
VCB[V], COLLECTOR BASE VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Collector Output Capacitance
40
35
30
25
20
15
10
5
10
*1ms
1.Tc=25oC
Thermal limitation
2.*Single Pulse
Thermal limitation
S/B limitation
1
S/B limitation
0
0.1
25
50
75
100
125
150
175
1
10
100
TC[oC], CASE TEMPERATURE
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area
Figure 6. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
Package Demensions
TO-220
4.50 ±0.20
9.90 ±0.20
(8.70)
+0.10
1.30
–0.05
ø3.60 ±0.10
(45
°
)
1.27 ±0.10
1.52 ±0.10
0.80 ±0.10
+0.10
–0.05
0.50
2.40 ±0.20
2.54TYP
2.54TYP
[2.54 ±0.20
]
[2.54 ±0.20]
10.00 ±0.20
Dimensions in Millimeters
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
HiSeC™
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
Bottomless™
CoolFET™
CROSSVOLT™
E2CMOS™
FACT™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench®
QFET™
VCX™
FACT Quiet Series™
QS™
FAST®
Quiet Series™
SuperSOT™-3
SuperSOT™-6
FASTr™
GTO™
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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2000 Fairchild Semiconductor International
Rev. E
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