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KSC5801YDTBTU [FAIRCHILD]

Power Bipolar Transistor, 8A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3PF, 3 PIN;
KSC5801YDTBTU
型号： KSC5801YDTBTU
厂家： FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述：

Power Bipolar Transistor, 8A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3PF, 3 PIN

晶体 显示器 二极管 晶体管 功率双极晶体管 高压 放大器 局域网
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KSC5801  
High Voltage Color Display Horizontal  
Deflection Output  
Equivalent Circuit  
C
(Damper Diode Built In)  
•
•
•
•
High Breakdown Voltage : BV  
=1500V  
CBO  
High Speed Switching : t =0.1µs (Typ.)  
B
F
Wide S.O.A  
For C-Monitor (48KHz) & C-TV (~21”)  
TO-3PF  
1.Base 2.Collector 3.Emitter  
1
50Ω typ.  
E
NPN Triple Diffused Planar Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
Collector Current (Pulse)  
1500  
CBO  
CEO  
EBO  
800  
V
6
V
I
I
8
16  
A
C
A
CP  
P
Collector Dissipation (T =25°C)  
50  
W
°C  
°C  
C
C
T
T
Junction Temperature  
Storage Temperature  
150  
J
- 55 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Collector Cut-off Current  
Collector Cut-off Current  
Emitter Cut-off Current  
DC Current Gain  
Test Condition  
Min.  
Typ.  
Max.  
1
Units  
I
I
I
V
V
V
= 1400V, V = 0  
V
CES  
CE  
CB  
EB  
BE  
= 800V, I = 0  
10  
mA  
mA  
CBO  
EBO  
E
= 4V, I = 0  
40  
10  
4
250  
C
h
h
V
V
= 5V, I = 1.0A  
30  
7
FE1  
CE  
CE  
C
= 5V, I = 5.0A  
FE2  
C
V
V
V
(sat)  
(sat)  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Damper Diode Turn On Voltage  
Fall Time  
I
I
= 5A, I = 1.2A  
5
V
V
CE  
BE  
F
C
C
B
= 5A, I = 1.2A  
1.5  
2
B
I = 6A  
V
F
t
V
= 200V, I = 4A  
0.2  
µs  
F
CC  
C
I
= 0.8A, I = -1.6A  
B1  
B2  
R = 50Ω  
L
hermal Characteristics T =25°C unless otherwise noted  
C
Symbol  
Item  
Max  
Unit  
R
Thermal Resistance, Junction to Case  
2.5  
°C/W  
θjC  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  
Typical Characteristics  
100  
10  
1
10  
9
VCE = 5V  
8
7
1.8A  
125O  
C
IB = 2.0A  
1.6A  
6
1.4A  
75O  
25O  
C
1.2A  
-25O  
C
1.0A  
5
4
3
2
1
0
0.8A  
C
0.6A  
-25O  
C
0.4A  
125O  
C
IB = 0.2A  
0
1
2
3
4
5
6
7
8
9
10  
0.1  
1
10  
VCE[V], COLLECTOR-EMITTER VOLTAGE  
IC[A], COLLECTOR CURRENT  
Figure 1. Static Characteristic  
Figure 2. DC current Gain  
10  
2
IC = 3IB  
IC = 5IB  
1
1
Tj = -25OC  
-25O  
C
Tj = 125OC  
25O  
75O  
C
Tj = +25OC  
C
125O  
C
0.4  
0.1  
0.1  
1E-3  
0.01  
0.1  
1
10  
1
10  
IC[A], COLLECTOR CURRENT  
IC[A], COLLECTOR CURRENT  
Figure 3. Collector-Emitter Saturation Voltage  
Figure 4. Base-Emitter Sautration Voltage  
2
10  
IC = 5IB  
VCE = 5V  
8
6
4
2
0
1
-25O  
25O  
C
C
75O  
125O  
C
C
0.4  
0.1  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
2.0  
1
10  
IC[A], COLLECTOR CURRENT  
VBE[V], BASE-EMITTER VOLTAGE  
Figure 5. Base-Emitter Sautration Voltage  
Figure 6. Base-Emitter On Voltage  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  
Typical Characteristics (Continued)  
8
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
6
IC = 2.0A  
IC = 3.0A  
IC = 2.5A  
4
2
IC = 2.0A  
IC = 2.5A  
IC = 3.0A  
0
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
dIB/dt[A/µS], BASE CURRETN GRADIENT  
dIB/dt[A/µS], BASE CURRETN GRADIENT  
Figure 7. Switching Characteristic  
Figure 8. Switching Characteristic  
5
4
3
2
1
0.8  
0.6  
0.4  
0.2  
0.0  
IC = 2.5A  
IC = 3.0A  
IC = 3.0A  
IC = 2.5A  
IC = 2.0A  
IC = 2.0A  
0
0.0  
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.0  
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
dIB/dt[A/µS], BASE CURRETN GRADIENT  
dIB/dt[A/µS], BASE CURRETN GRADIENT  
Figure 9. Switching Characteristic  
Figure 10. Switching Characteristic  
100  
100  
SINGLE PULSE  
TC=25O  
IC = 5IB1 = -5IB2  
L = 500µH  
C
IC max(Pulse)  
IC max(DC)  
SINGLE PULSE  
100µs  
10  
1
10ms  
300µs  
10  
IB2 = -1A Const  
1ms  
DC  
1
0.1  
0.01  
0.1  
1
10  
100  
1000  
10  
100  
1000  
10000  
2000  
VCE[V], COLLECTOR-EMITTER VOLTAGE  
VCE[V], COLLECTOR-EMITTER VOLTAGE  
Figure 11. Safe Operating Area  
Figure 12. Reverse Bias Safe Operating Area  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  
Typical Characteristics (Continued)  
80  
70  
60  
50  
40  
30  
20  
10  
0
0
25  
50  
75  
100  
125  
150  
175  
TC[oC], CASE TEMPERATURE  
Figure 13. Power Derating  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  
Package Demensions  
TO-3PF  
5.50 ±0.20  
3.00 ±0.20  
15.50 ±0.20  
ø3.60 ±0.20  
(1.50)  
°
10  
0.85 ±0.03  
2.00 ±0.20  
2.00 ±0.20  
2.00 ±0.20  
2.00 ±0.20  
3.30 ±0.20  
4.00 ±0.20  
+0.20  
–0.10  
0.75  
5.45TYP  
[5.45 ±0.30  
5.45TYP  
[5.45 ±0.30]  
+0.20  
–0.10  
0.90  
]
Dimensions in Millimeters  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  
Package Demensions  
TO-3PF  
5.50 ±0.20  
3.00 ±0.20  
15.50 ±0.20  
ø3.60 ±0.20  
(1.50)  
°
10  
0.85 ±0.03  
2.00 ±0.20  
2.00 ±0.20  
2.00 ±0.20  
2.00 ±0.20  
3.30 ±0.20  
4.00 ±0.20  
+0.20  
–0.10  
0.75  
5.45TYP  
[5.45 ±0.30  
5.45TYP  
[5.45 ±0.30]  
+0.20  
–0.10  
0.90  
]
Dimensions in Millimeters  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  

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