KSB794R [FAIRCHILD]
Small Signal Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-126;
| 型号： | KSB794R |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Small Signal Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-126 晶体 放大器 小信号双极晶体管 功率放大器 局域网 |
| 文件： | 总4页 (文件大小：50K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
KSB794/795
Audio Frequency Power Amplifier
•
Low Speed Switching Industrial Use
TO-126
1
1. Emitter 2.Collector 3.Base
PNP Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings T =25°C unless otherwise noted
C
Symbol
Parameter
Value
Units
V
V
V
Collector-Base Volage
CBO
CEO
EBO
: KSB794
: KSB795
- 60
- 80
V
V
Collector-Emitter Volage
: KSB794
: KSB795
- 60
- 80
V
V
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current (DC)
- 8
- 1.5
- 3
V
A
.
R1 = 10 kΩ
I
I
I
C
.
R2 = 500Ω
A
CP
B
- 0.15
1
A
P
P
Collector Dissipation (T =25°C)
W
W
°C
°C
C
C
a
Collector Dissipation (T =25°C)
10
C
TJ
Junction Temperature
Storage Temperature
150
T
- 55 ~ 150
STG
* PW≤300µs, Duty Cycle≤10%
Electrical Characteristics T =25°C unless otherwise noted
C
Symbol
Parameter
Collector Cut-off Current
Collector Cut-off Current
Collector Cut-off Current
Collector Cut-off Current
Test Condition
Min.
Max.
- 10
- 1
Units
µA
I
V
V
V
V
= - 60V, I = 0
CBO
CER
CB
CE
CE
CE
E
I
I
I
= - 60V, R = 51Ω @ T = 125°C
mA
µA
BE
C
= - 60V, V (off) = 1.5V
- 10
-1
CEX1
CEX2
BE
= - 60V, V (off) = 1.5V
mA
BE
@ T = 125°C
C
I
Emitter Cut-off Current
* DC Current Gain
V
= - 5V, I = 0
- 1
mA
EBO
EB
C
h
h
V
V
= - 2V, I = - 0.5A
1000
2000
FE1
FE2
CE
CE
C
= - 2V, I = - 1A
30000
-1.5
C
V
V
(sat)
(sat)
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
I
I
= - 1A, I = - 1mA
V
V
CE
C
C
B
= - 1A, I = - 1mA
- 2
BE
B
* Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed.
h
Classificntion
FE
Classification
R
O
Y
h
2000 ~ 5000
4000 ~ 10000
8000 ~ 30000
FE2
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
Typical Characteristics
-2.0
-1.8
-1.6
-1.4
-1.2
-1.0
-0.8
-0.6
-0.4
-0.2
-0.0
100000
10000
1000
VCE=-2V
Plused
IB=-100uA
IB=-80uA
100
-0.01
-0.0
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
-3.5
-4.0
-4.5
-5.0
-0.1
-1
-10
IC[A], COLLECTOR CURRENT
VCE(V), COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
Figure 2. DC current Gain
-10
10
IC=2000IB
Single pulse
VBE(SAT)
VCE(SAT)
1
-1
0.1
-0.1
0.01
-0.1
-1
1
10
100
IC[A],COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Safe Operating Area
160
140
120
100
80
14
12
10
8
6
60
4
40
2
20
0
0
0
25
50
75
100
125
150
175
200
0
25
50
75
100
125
150
175
TC[OC], CASE TEMPERATURE
TC[oC], CASE TEMPERATURE
Figure 5. Derating Curve of Safe Operating Area
Figure 6. Power Derating
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
Package Demensions
TO-126
8.00 ±0.30
3.25 ±0.20
ø3.20 ±0.10
(1.00)
(0.50)
0.75 ±0.10
1.75 ±0.20
1.60 ±0.10
0.75 ±0.10
#1
+0.10
–0.05
0.50
2.28TYP
[2.28±0.20]
2.28TYP
[2.28±0.20]
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
FAST®
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
OPTOPLANAR™
PACMAN™
POP™
STAR*POWER™
Stealth™
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TruTranslation™
TinyLogic™
UHC™
Power247™
PowerTrench®
QFET™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER®
SMART START™
UltraFET®
VCX™
FACT™
FACT Quiet Series™
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2001 Fairchild Semiconductor Corporation
Rev. H3
相关型号：
KSB795-O
Small Signal Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126
SAMSUNG
KSB795-R
Small Signal Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126
SAMSUNG
KSB795-Y
Small Signal Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126
SAMSUNG
KSB795Y
Small Signal Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126
FAIRCHILD
KSB798
Power Bipolar Transistor, 1A I(C), 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, SOT-89, 3 PIN
SAMSUNG
KSB798-G
Power Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, SOT-89, 3 PIN
SAMSUNG
©2020 ICPDF网 联系我们和版权申明