KSA539 [FAIRCHILD]

Low Frequency Amplifier; 低频放大器
KSA539
型号: KSA539
厂家: FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述:

Low Frequency Amplifier
低频放大器

放大器
文件: 总4页 (文件大小:39K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
KSA539  
Low Frequency Amplifier  
Complement to KSC815  
Collector-Base Voltage: V  
Collector Power Dissipation: P = 400mW  
= -60V  
CBO  
C
Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)  
TO-92  
1. Emitter 2. Base 3. Collector  
1
PNP Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Ratings  
-60  
Units  
V
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
CBO  
-45  
V
CEO  
EBO  
-5  
V
I
-200  
400  
mA  
mW  
°C  
C
P
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
C
T
T
150  
J
-55 ~ 150  
°C  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Test Condition  
Min.  
-60  
-45  
-5  
Typ.  
Max.  
Units  
BV  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
I
= -100µA, I =0  
V
V
CBO  
CEO  
EBO  
C
E
BV  
BV  
I = -10mA, I =0  
C B  
I = -10µA, I =0  
V
E
C
I
I
V
= -45V, I =0  
-100  
-100  
240  
nA  
nA  
CBO  
EBO  
CB  
EB  
CE  
CE  
E
Emitter Cut-off Current  
V
V
V
= -3V, I =0  
C
h
DC Current Gain  
= -1V I = -50mA  
40  
FE  
C
V
V
V
(on)  
(sat)  
(sat)  
Base-Emitter On Voltage  
= -1V, I = -10mA  
-0.60  
-0.65  
-0.25  
-0.9  
-0.90  
-0.5  
V
V
V
BE  
CE  
BE  
C
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
I = -150mA, I = -15mA  
C B  
I = -150mA, I = -15mA  
-1.2  
C
B
h
Classification  
FE  
Classification  
R
O
Y
h
40 ~ 80  
70 ~ 140  
120 ~ 240  
FE  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, June 2001  
Typical Characteristics  
-200  
1000  
100  
10  
VCE = -1V  
-180  
IB =-0.8mA  
-160  
IB =-0.7mA  
IB =-0.6mA  
IB =-0.5mA  
-140  
-120  
-100  
-80  
IB =-0.4mA  
IB =-0.3mA  
IB =-0.2mA  
-60  
-40  
-20  
IB =-0.1mA  
-1  
-10  
-100  
-1000  
-0  
-5  
-10  
-15  
-20  
-25  
-30  
-35  
-40  
-45  
-50  
IC[mA], COLLECTOR CURRENT  
VCE[V], COLLECTOR-EMITTER VOLTAGE  
Figure 1. Static Characteristic  
Figure 2. DC current Gain  
-10  
-200  
-100  
VCE = -1V  
Ic = 10IB  
-1  
-10  
-0.1  
-0.01  
-1  
-1  
-10  
-100  
-400  
0
-0.2  
-0.4  
-0.6  
-0.8  
-1.0  
-1.2  
IC[mA], COLLECTOR CURRENT  
VBE[V], BASE-EMITTER VOLTAGE  
Figure 3. Base-Emitter Saturation Voltage  
Collector-Emitter Saturation Voltage  
Figure 4. Base-Emitter On Voltage  
100  
f = 1MHz  
IE= 0  
10  
1
-1  
-10  
-100  
VCB[V], COLLECTOR BASE VOLTAGE  
Figure 5. Collector Output Capacitance  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, June 2001  
Package Demensions  
TO-92  
+0.25  
–0.15  
4.58  
0.46 ±0.10  
+0.10  
–0.05  
1.27TYP  
1.27TYP  
0.38  
[1.27 ±0.20  
]
[1.27 ±0.20]  
3.60 ±0.20  
(R2.29)  
Dimensions in Millimeters  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, June 2001  
TRADEMARKS  
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not  
intended to be an exhaustive list of all such trademarks.  
FAST®  
FASTr™  
FRFET™  
GlobalOptoisolator™  
GTO™  
OPTOPLANAR™  
PACMAN™  
POP™  
STAR*POWER™  
Stealth™  
ACEx™  
Bottomless™  
CoolFET™  
CROSSVOLT™  
DenseTrench™  
DOME™  
EcoSPARK™  
E2CMOS™  
EnSigna™  
SuperSOT™-3  
SuperSOT™-6  
SuperSOT™-8  
SyncFET™  
TruTranslation™  
TinyLogic™  
UHC™  
Power247™  
PowerTrench®  
QFET™  
HiSeC™  
ISOPLANAR™  
LittleFET™  
MicroFET™  
MICROWIRE™  
OPTOLOGIC™  
QS™  
QT Optoelectronics™  
Quiet Series™  
SLIENT SWITCHER®  
SMART START™  
UltraFET®  
VCX™  
FACT™  
FACT Quiet Series™  
STAR*POWER is used under license  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY  
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY  
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;  
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR  
CORPORATION.  
As used herein:  
1. Life support devices or systems are devices or systems  
which, (a) are intended for surgical implant into the body,  
or (b) support or sustain life, or (c) whose failure to perform  
when properly used in accordance with instructions for use  
provided in the labeling, can be reasonably expected to  
result in significant injury to the user.  
2. A critical component is any component of a life support  
device or system whose failure to perform can be  
reasonably expected to cause the failure of the life support  
device or system, or to affect its safety or effectiveness.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
Advance Information  
Formative or In  
Design  
This datasheet contains the design specifications for  
product development. Specifications may change in  
any manner without notice.  
Preliminary  
First Production  
This datasheet contains preliminary data, and  
supplementary data will be published at a later date.  
Fairchild Semiconductor reserves the right to make  
changes at any time without notice in order to improve  
design.  
No Identification Needed  
Obsolete  
Full Production  
This datasheet contains final specifications. Fairchild  
Semiconductor reserves the right to make changes at  
any time without notice in order to improve design.  
Not In Production  
This datasheet contains specifications on a product  
that has been discontinued by Fairchild semiconductor.  
The datasheet is printed for reference information only.  
©2001 Fairchild Semiconductor Corporation  
Rev. H3  

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