KSA1203 [FAIRCHILD]
Low Frequency Power Amplifier; 低频功率放大器型号: | KSA1203 |
厂家: | FAIRCHILD SEMICONDUCTOR |
描述: | Low Frequency Power Amplifier |
文件: | 总4页 (文件大小:45K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
KSA1203
Low Frequency Power Amplifier
•
•
•
3W Output application
Collector Power Dissipation P =1~2W : Mounted on Ceramic Board
Complement to KSC2883
C
SOT-89
1. Base 2. Collector 3. Emitter
1
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings T =25°C unless otherwise noted
a
Symbol
Parameter
Ratings
-30
Units
V
V
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
V
V
V
A
A
CBO
-30
CEO
EBO
-5
I
I
-1.5
-0.3
C
Base Current
B
P
P *
Collector Power Dissipation
500
1,000
mW
mW
C
C
T
T
Junction Temperature
Storage Temperature
150
°C
°C
J
-55 ~ 150
STG
* Mounted on Ceramic Board (250mm2 × 0.8mm)
Electrical Characteristics T =25°C unless otherwise noted
a
Symbol
Parameter
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Test Condition
Min.
-30
-5
Typ.
Max.
Units
BV
I = -10mA, I =0
V
V
CEO
EBO
C
B
BV
I = -1mA, I =0
E C
I
I
V
= -30V, I =0
-100
-100
320
-2.0
-1.0
nA
nA
CBO
EBO
CB
BE
CE
E
Emitter Cut-off Current
V
V
= -5V, I =0
C
h
DC Current Gain
= -2V, I = -500mA
100
FE
C
V
V
(sat)
(on)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
I = -1.5A, I = -30mA
V
V
CE
BE
C
B
V
= -2V, I = -500mA
C
CE
CE
CB
f
V
V
= -2V, I = -500mA
120
MHz
pF
T
C
C
= -10V, I =0, f=1MHz
50
ob
E
h
Classification
FE
Classification
O
Y
h
100 ~ 200
160 ~ 320
FE
Marking
SGX
h
grade
FE
©2004 Fairchild Semiconductor Corporation
Rev. A3, June 2004
Typical Characteristics
-1.6
1000
100
10
IB =-10mA
VCE = -2V
IB =-8mA
-1.4
-1.2
-1.0
-0.8
-0.6
-0.4
-0.2
IB =-6mA
IB =-4mA
IB =-3mA
IB =-2mA
IB =-1mA
IB =0mA
-1
-10
-100
-1000
-10000
-0
-2
-4
-6
-8
-10
-12
-14
-16
IC[mA], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
Figure 2. DC current Gain
-10
-1.6
-1.4
-1.2
-1.0
-0.8
-0.6
-0.4
-0.2
IC = 50IB
VCE = -2V
-1
-0.1
-0.01
0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-1.4
-1.6
-1
-10
-100
-1000
-10000
VBE[V], BASE-EMITTER VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
-10
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
Ta=25oC
Single Pulse
ICMAX(Pulse)
1
ICMAX(DC)
1
m
s
0
m
s
-1
-0.1
2
-0.01
-0.1
0
25
50
75
100
125
150
175
200
-1
-10
-100
Ta[oC], AMBIENT TEMPERATURE
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area
Figure 6. Power Derating
©2004 Fairchild Semiconductor Corporation
Rev. A3, June 2004
Package Dimensions
SOT-89
1.50 ±0.20
4.50 ±0.20
1.65 ±0.10
(0.40)
C0.2
0.50 ±0.10
0.40 ±0.10
+0.10
–0.05
0.40
1.50 TYP 1.50 TYP
Dimensions in Millimeters
©2004 Fairchild Semiconductor Corporation
Rev. A3, June 2004
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
FAST®
FASTr™
FPS™
FRFET™
GlobalOptoisolator™
GTO™
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
Power247™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
A
CEx™
PowerSaver™
PowerTrench®
QFET®
ActiveArray™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
µSerDes™
TinyLogic®
HiSeC™
TINYOPTO™
TruTranslation™
UHC™
EcoSPARK™
I2C™
MSXPro™
OCX™
OCXPro™
E2CMOS™
i-Lo™
ImpliedDisconnect™
EnSigna™
FACT™
FACT Quiet Series™
UltraFET®
OPTOLOGIC®
OPTOPLANAR™
PACMAN™
POP™
SILENT SWITCHER® VCX™
SMART START™
SPM™
Across the board. Around the world.™
The Power Franchise®
Programmable Active Droop™
Stealth™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2004 Fairchild Semiconductor Corporation
Rev. I11
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