KSA1156Y [FAIRCHILD]

Small Signal Bipolar Transistor, 0.5A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, TO-126;
KSA1156Y
型号: KSA1156Y
厂家: FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述:

Small Signal Bipolar Transistor, 0.5A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, TO-126

文件: 总5页 (文件大小:64K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
KSA1156  
High Voltage Switching  
Low Power Switching Regulator  
DC-DC Converter  
High Breakdown Voltage  
Low Collector Saturation Voltage  
High Speed Switching  
TO-126  
1. Emitter 2.Collector 3.Base  
1
PNP Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Ratings  
- 400  
- 400  
- 7  
Units  
V
V
V
V
Collector-Base Voltage  
CBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Base Current  
V
CEO  
EBO  
V
I
I
I
- 0.25  
- 0.5  
- 1  
A
B
Collector Current (DC)  
Collector Current (Pulse)  
A
C
A
CP  
P
P
Collector Dissipation (T =25°C)  
1
W
W
°C  
°C  
C
a
Collector Dissipation (T =25°C)  
10  
C
C
T
T
Junction Temperature  
Storage Temperature  
150  
J
- 55 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
Min.  
Max.  
Units  
V
V
(sus)  
Collector-Emitter Sustaining Voltage  
I
= - 100mA, I = - 10mA  
- 400  
V
CEO  
C
B
L = - 20mH  
(sus)  
Collector-Emitter Sustaining Voltage  
I
= - 200mA, I = - I = - 20mA  
- 400  
V
CEX  
C
B1  
B2  
V
V
V
V
V
(off)= 5V, L = 10mH  
BE  
CB  
EB  
CE  
CE  
I
I
I
I
Collector Cut-off Current  
Emitter Cut-off Current  
Collector Cut-off Current  
Collector Cut-off Current  
= - 400V, I = 0  
- 100  
- 10  
- 100  
- 1  
µA  
µA  
µA  
mA  
CBO  
E
= - 5V, I = 0  
EBO  
C
= - 400V, V (off) = 1.5V  
CEX1  
CEX2  
BE  
= - 400V, V (off) = 1.5V  
BE  
T = 125°C  
C
h
DC Current Gain  
V
= - 5V, I = - 100mA  
30  
200  
- 1  
- 1.2  
1
FE  
CE  
C
V
V
(sat)  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Turn On Time  
I
I
= - 100mA, I = - 10mA  
V
V
CE  
C
C
B
(sat)  
= - 100mA, I = - 10mA  
B
BE  
t
t
t
V
= - 150V, I = - 100mA  
µs  
µs  
µs  
ON  
CC  
C
I
= - 10mA , I = 20mA  
Storage Time  
B1  
B2  
4
STG  
F
R = 1.5KΩ  
L
Fall Time  
1
h
Classification  
FE  
Classification  
N
R
O
Y
h
30 ~ 60  
40 ~ 80  
60 ~ 120  
100 ~ 200  
FE  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  
Typical Characteristics  
-0.5  
-0.4  
-0.3  
-0.2  
-0.1  
-0.0  
1000  
100  
10  
IB = -200mA  
IB = -180mA  
IB = -160mA  
VCE = -5V  
Pulse Test  
IB = -140mA  
IB = -120mA  
IB = -100mA  
IB = -80mA  
IB = -60mA  
IB = -40mA  
IB = -20mA  
1
-0.1  
-0  
-2  
-4  
-6  
-8  
-10  
-1  
-10  
-100  
-1000  
VCE[V], COLLECTOR-EMITTER VOLTAGE  
IC[A], COLLECTOR CURRENT  
Figure 1. Static Characteristic  
Figure 2. DC current Gain  
-10  
-10  
IC = 10 IB  
IC MAX. (Pulse)  
-1  
VBE(sat)  
-1  
-0.1  
-0.1  
VCE(sat)  
-0.01  
-1E-3  
-0.01  
-0.1  
-1  
-10  
-100  
-1000  
-1  
-10  
-100  
-1000  
VCE[V], COLLECTOR-EMITTER VOLTAGE  
IC[mA], COLLECTOR CURRENT  
Figure 3. Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Figure 4. Safe Operating Area  
-250  
-200  
-150  
-100  
-50  
160  
140  
120  
100  
80  
60  
40  
20  
-0  
0
-0  
-100  
-200  
-300  
-400  
-500  
0
50  
100  
150  
200  
TC[oC], CASE TEMPERATURE  
VCE(v), COLLECTOR EMITTER VOLTAGE  
Figure 5. Reverse Bias Safe Operating Area  
Figure 6. Derating Curve of Safe Operating Areas  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  
Typical characteristics(Continued)  
16  
14  
12  
10  
8
6
4
2
0
0
50  
100  
150  
200  
TC[oC], CASE TEMPERATURE  
Figure 7. Power Derating  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  
Package Demensions  
TO-126  
8.00 ±0.30  
3.25 ±0.20  
ø3.20 ±0.10  
(1.00)  
(0.50)  
0.75 ±0.10  
1.75 ±0.20  
1.60 ±0.10  
0.75 ±0.10  
#1  
+0.10  
–0.05  
0.50  
2.28TYP  
[2.28±0.20]  
2.28TYP  
[2.28±0.20]  
Dimensions in Millimeters  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  
TRADEMARKS  
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is  
not intended to be an exhaustive list of all such trademarks.  
ACEx™  
HiSeC™  
SuperSOT™-8  
SyncFET™  
TinyLogic™  
UHC™  
Bottomless™  
CoolFET™  
CROSSVOLT™  
E2CMOS™  
FACT™  
ISOPLANAR™  
MICROWIRE™  
POP™  
PowerTrench®  
QFET™  
VCX™  
FACT Quiet Series™  
QS™  
FAST®  
Quiet Series™  
SuperSOT™-3  
SuperSOT™-6  
FASTr™  
GTO™  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY  
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY  
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;  
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR  
INTERNATIONAL.  
As used herein:  
1. Life support devices or systems are devices or systems  
which, (a) are intended for surgical implant into the body,  
or (b) support or sustain life, or (c) whose failure to perform  
when properly used in accordance with instructions for use  
provided in the labeling, can be reasonably expected to  
result in significant injury to the user.  
2. A critical component is any component of a life support  
device or system whose failure to perform can be  
reasonably expected to cause the failure of the life support  
device or system, or to affect its safety or effectiveness.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
Advance Information  
Formative or In  
Design  
This datasheet contains the design specifications for  
product development. Specifications may change in  
any manner without notice.  
Preliminary  
First Production  
This datasheet contains preliminary data, and  
supplementary data will be published at a later date.  
Fairchild Semiconductor reserves the right to make  
changes at any time without notice in order to improve  
design.  
No Identification Needed  
Obsolete  
Full Production  
This datasheet contains final specifications. Fairchild  
Semiconductor reserves the right to make changes at  
any time without notice in order to improve design.  
Not In Production  
This datasheet contains specifications on a product  
that has been discontinued by Fairchild semiconductor.  
The datasheet is printed for reference information only.  
©2000 Fairchild Semiconductor International  
Rev. E  

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