KA5S0765CYDTU [FAIRCHILD]
Fairchild Power Switch(FPS); 飞兆功率开关（ FPS ）
| 型号： | KA5S0765CYDTU |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Fairchild Power Switch(FPS) |
| 文件： | 总20页 (文件大小：256K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
www.fairchildsemi.com
KA5S-SERIES
KA5S0765C/KA5S09654QT/KA5S0965/
KA5S12656/KA5S1265
Fairchild Power Switch(FPS)
Features
TO-3P-5L
• Wide Operating Frequency Range Up to 150Khz
• Lowest Cost SMPS Solution
• Lowest External Components
• Low Start-up Current (max:170uA)
• Low Operating Current (max:12mA)
• Internal High Voltage SenseFET
1
TO-220-5L
TO-220F-5L
• Over Voltage Protection With Latch Mode (Min23V)
• Over Load Protection With Latch Mode
• Over Current Protection With Latch Mode
• Internal Thermal Protection With Latch Mode
• Pulse By Pulse Over Current Limiting
• Under Voltage Lockout With Hysteresis
• External Sync. Terminal
1
1
1. Drain 2. Gnd 3. V
4. FeedBack 5. Sync.
CC
Internal Block Diagram
Drain
1
V
CC
3
V
CC
UVLO
Bias
+
Vref
VREF UVLO
+
-
-
15/9V
2.5V
SenseFET
Soft Start
& Sync
-
5
4
CLK
OSC
Vth.sy
+
VREF
7V
6V
Q
S
R
Feedback
-
2.5V
+
0.95mA
R
VREF
Voffset
V
CC
V
S
4µA
OLP
Rsense
S
(Vfb=7.5V)
Q
GND
2
R
1µs Window
Open Circuit
TSD
(Tj=160°C)
Shutdown Latch
OCP
(V =1.1V)
S
Power-on Reset
(VCC=6.5V)
OVP
(V =25V)
CC
Rev.1.0.2
©2001 Fairchild Semiconductor Corporation
KA5S-SERIES KA5S0765C/KA5S09654QT/KA5S0965/KA5S12656/KA5S1265
Absolute Maximum Ratings
(Ta=25°C, unless otherwise specified)
Characteristic
Symbol
Value
Unit
KA5S0765C
Maximum drain voltage
V
650
650
±30
28
V
V
D,MAX
Drain-gate voltage(R =1MΩ)
V
DGR
GS
Gate-source(GND) voltage
Drain current pulsed(1)
V
V
GS
DM
I
ADC
ADC
ADC
A(mJ)
V
Continuous drain current (Tc = 25°C)
Continuous drain current (Tc = 100°C)
Single pulsed avalanch current(3)(Energy (2)
Maximum supply voltage
I
I
7.0
D
D
5.6
)
I
(E
AS AS
)
20(570)
30
V
CC,MAX
V
V
-0.3 to V
V
FB
CC
Input voltage range
-0.3 to 8
135
V
SS
PD (Watt H/S)
Derating
W
Total power dissipation
1.1
W / °C
°C
Operating junction temperature.
Operating ambient temperature.
Storage temperature range.
T
+160
J
T
-25 to +85
-55 to +150
°C
A
T
°C
STG
KA5S09654QT
Maximum drain voltage
V
650
650
±30
49
V
V
D,MAX
Drain-gate voltage(R =1MΩ)
V
DGR
GS
Gate-source(GND) voltage
Drain current pulsed(1)
V
V
GS
DM
I
ADC
ADC
ADC
A(mJ)
V
Continuous drain current (Tc = 25°C)
Continuous drain current (Tc = 100°C)
Single pulsed avalanch current(3)(Energy (2)
Maximum supply voltage
I
I
9.0
D
D
5.7
)
I
(E
AS AS
)
25(660)
30
V
CC,MAX
V
V
-0.3 to V
V
FB
SS
CC
Input voltage range
-0.3 to 8
160
V
PD (Watt H/S)
Derating
W
Total power dissipation
1.28
W / °C
°C
Operating junction temperature.
Operating ambient temperature.
Storage temperature range.
T
+160
J
T
-25 to +85
-55 to +150
°C
A
T
°C
STG
2
KA5S-SERIES KA5S0765C/KA5S09654QT/KA5S0965/KA5S12656/
Absolute Maximum Ratings (Continued)
(Ta=25°C, unless otherwise specified)
Characteristic
Symbol
Value
Unit
KA5S0965
Maximum Drain Voltage
V
650
650
±30
36
V
V
D,MAX
Drain-Gate Voltage(R =1MΩ)
V
DGR
GS
Gate-Source(GND) Voltage
Drain Current Pulsed(1)
V
V
GS
DM
I
ADC
ADC
ADC
A(mJ)
V
Continuous Drain Current (Tc = 25°C)
Continuous Drain Current (Tc = 100°C)
Single Pulsed Avalanch Current(3)(Energy (2)
Maximum Supply Voltage
I
I
9.0
D
D
5.8
)
I
(E
AS AS
)
28(950)
30
V
CC,MAX
V
V
-0.3 to V
V
FB
CC
Input Voltage Range
-0.3 to 8
170
V
SS
PD (Watt H/S)
Derating
W
Total Power Dissipation
1.33
W / °C
°C
Operating Junction Temperature.
Operating Ambient Temperature.
Storage Temperature Range.
T
+160
J
T
-25 to +85
-55 to +150
°C
A
T
°C
STG
KA5S12656
Maximum Drain Voltage
V
650
650
±30
48
V
V
D,MAX
Drain-Gate Voltage(R =1MΩ)
V
DGR
GS
Gate-Source(GND) Voltage
Drain Current Pulsed(1)
V
V
GS
DM
I
ADC
ADC
ADC
A(mJ)
V
Continuous Drain Current (Tc = 25°C)
Continuous Drain Current (Tc = 100°C)
Single Pulsed Avalanch Current(3)(Energy (2)
Maximum Supply Voltage
I
I
12
D
D
8.4
)
I
(E
AS AS
)
30(785)
30
V
CC,MAX
V
V
-0.3 to V
V
FB
SS
CC
Input Voltage Range
-0.3 to 8
160
V
PD (Watt H/S)
Derating
W
Total Power Dissipation
1.28
W / °C
°C
Operating Junction Temperature.
Operating Ambient Temperature.
Storage Temperature Range.
T
+160
J
T
-25 to +85
-55 to +150
°C
A
T
°C
STG
3
KA5S-SERIES KA5S0765C/KA5S09654QT/KA5S0965/KA5S12656/KA5S1265
Absolute Maximum Ratings (Continued)
(Ta=25°C, unless otherwise specified)
Characteristic
Symbol
Value
Unit
KA5S1265
Maximum Drain Voltage
V
650
650
±30
48
V
V
D,MAX
Drain-Gate Voltage(R =1MΩ)
V
DGR
GS
Gate-Source(GND) Voltage
Drain Current Pulsed(1)
V
V
GS
DM
I
ADC
ADC
ADC
A(mJ)
V
Continuous Drain Current (Tc = 25°C)
Continuous Drain Current (Tc = 100°C)
Single Pulsed Avalanch Current(3)(Energy (2)
Maximum Supply Voltage
I
I
12
D
D
8.4
)
I
(E
AS AS
)
30(785)
30
V
CC,MAX
V
V
-0.3 to V
V
FB
CC
Input Voltage Range
-0.3 to 8
160
V
SS
PD (Watt H/S)
Derating
W
Total Power Dissipation
1.28
W / °C
°C
Operating Junction Temperature.
Operating Ambient Temperature.
Storage Temperature Range.
T
+160
J
T
-25 to +85
-55 to +150
°C
A
T
°C
STG
Note:
1. Repetitive rating : Pulse width limited by maximum junction temperature
2. L = 10mH, V =50V, R = 27Ω, starting Tj = 25°C
DD
G
3. L = 13uH, starting Tj = 25°C
4
KA5S-SERIES KA5S0765C/KA5S09654QT/KA5S0965/KA5S12656/
Electrical Characteristics (SFET Part)
(Ta = 25°C unless otherwise specified)
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
KA5S0765C
Drain-source breakdown voltage
BVDSS
IDSS
VGS=0V, ID=50µA
650
-
-
-
-
V
VDS=Max., Rating, VGS=0V
50
µA
Zero gate voltage drain current
VDS=0.8Max., Rating,
VGS=0V, TC=125°C
-
-
200
µA
Static drain-source on resistance(1)
Forward transconductance(1)
Input capacitance
RDS(on)
gfs
VGS=10V, ID=4.0A
VDS=15V, ID=4.0A
-
1.25
-
1.6
Ω
3.0
-
-
-
-
-
-
-
-
S
Ciss
Coss
Crss
td(on)
tr
-
-
-
-
-
-
-
1600
310
120
25
VGS=0V, VDS=25V,
f = 1MHz
Output capacitance
Reverse transfer capacitance
Turn on delay time
pF
nS
VDD=0.5BVDSS, ID=7.0A
(MOSFET switching
time are essentially
independent of
Rise time
55
Turn off delay time
td(off)
tf
80
Fall time
operating temperature)
50
Total gate charge
(gate-source+gate-drain)
VGS=10V, ID=7.0A,
VDS=0.5BVDSS(MOSFET
Switching time are
Essentially independent of
Operating temperature)
Qg
-
-
72
Gate-source charge
Qgs
Qgd
-
-
9.3
-
-
nC
Gate-drain (Miller) charge
29.3
KA5S09654QT
Drain-source breakdown voltage
BVDSS
IDSS
VGS=0V, ID=50µA
650
-
-
-
-
V
VDS=Max., Rating, VGS=0V
200
µA
Zero gate voltage drain current
VDS=0.8Max., Rating,
VGS=0V, TC=125°C
-
-
300
µA
Static drain-source on resistance(1)
Forward transconductance(1)
Input capacitance
RDS(on)
gfs
VGS=10V, ID=4.5A
VDS=50V, ID=4.5A
-
1.1
-
1.2
Ω
3.0
-
-
-
-
-
-
-
-
S
Ciss
Coss
Crss
td(on)
tr
-
-
-
-
-
-
-
1300
135
25
VGS=0V, VDS=25V,
f = 1MHz
Output capacitance
Reverse transfer capacitance
Turn on delay time
pF
nS
VDD=0.5BVDSS, ID=9.0A
(MOSFET switching
time are essentially
independent of
25
Rise time
75
Turn off delay time
td(off)
tf
130
70
Fall time
operating temperature)
Total gate charge
(gate-source+gate-drain)
VGS=10V, ID=9.0A,
VDS=0.5BVDSS(MOSFET
Switching time are
Essentially independent of
Operating temperature)
Qg
45
-
Gate-source charge
Qgs
Qgd
-
-
8
-
-
nC
Gate-drain (Miller) charge
22
5
KA5S-SERIES KA5S0765C/KA5S09654QT/KA5S0965/KA5S12656/KA5S1265
Electrical Characteristics (SFET Part; Continued)
(Ta = 25°C unless otherwise specified)
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
KA5S0965
Drain-source breakdown voltage
BVDSS
IDSS
VGS=0V, ID=50µA
650
-
-
-
-
V
VDS=Max., Rating, VGS=0V
50
µA
Zero gate voltage drain current
VDS=0.8Max., Rating,
VGS=0V, TC=125°C
-
-
200
µA
Static drain-source on resistance(1)
Forward transconductance(1)
Input capacitance
RDS(on)
gfs
VGS=10V, ID=4.5A
VDS=50V, ID=4.5A
-
0.96
-
1.2
-
Ω
5.0
S
Ciss
Coss
Crss
td(on)
tr
-
-
-
-
-
-
-
1750
190
78
-
VGS=0V, VDS=25V,
f = 1MHz
Output capacitance
Reverse transfer capacitance
Turn on delay time
-
pF
nS
-
VDD=0.5BVDSS, ID=9.0A
(MOSFET switching
time are essentially
independent of
20
50
55
180
70
Rise time
23
Turn off delay time
td(off)
tf
85
Fall time
operating temperature)
30
Total gate charge
(gate-source+gate-drain)
VGS=10V, ID=9.0A,
VDS=0.5BVDSS(MOSFET
Switching time are
Essentially independent of
Operating temperature)
Qg
-
74
95
Gate-source charge
Qgs
Qgd
-
-
12
35
-
-
nC
Gate-drain (Miller) charge
KA5S12656
Drain-source breakdown voltage
BVDSS
IDSS
VGS=0V, ID=50µA
650
-
-
-
-
V
VDS=Max., Rating, VGS=0V
50
µA
Zero gate voltage drain current
VDS=0.8Max., Rating,
VGS=0V, TC=125°C
-
-
200
µA
Static drain-source on resistance(1)
Forward transconductance(1)
Input capacitance
RDS(on)
gfs
VGS=10V, ID=6.0A
VDS=50V, ID=4.0A
-
0.72
-
0.9
Ω
5.7
-
-
-
-
-
-
-
-
S
Ciss
Coss
Crss
td(on)
tr
-
-
-
-
-
-
-
2700
300
61
VGS=0V, VDS=25V,
f = 1MHz
Output capacitance
Reverse transfer capacitance
Turn on delay time
pF
nS
VDD=0.5BVDSS, ID=12.0A
(MOSFET switching
time are essentially
independent of
18
Rise time
37
Turn off delay time
td(off)
tf
88
Fall time
operating temperature)
36
Total gate charge
(gate-source+gate-drain)
VGS=10V, ID=12.0A,
VDS=0.5BVDSS(MOSFET
Switching time are
Essentially independent of
Operating temperature)
Qg
-
-
140
Gate-source charge
Qgs
Qgd
-
-
20
69
-
-
nC
Gate-drain (Miller) charge
6
KA5S-SERIES KA5S0765C/KA5S09654QT/KA5S0965/KA5S12656/
Electrical Characteristics (SFET Part; Continued)
(Ta = 25°C unless otherwise specified)
Parameter
KA5S1265
Symbol
Conditions
Min. Typ. Max. Unit
Drain-source breakdown voltage
BVDSS
IDSS
VGS=0V, ID=50µA
650
-
-
-
-
V
VDS=Max., Rating, VGS=0V
50
µA
Zero gate voltage drain current
VDS=0.8Max., Rating,
VGS=0V, TC=125°C
-
-
200
µA
Static drain-source on resistance(1)
Forward transconductance(1)
Input capacitance
RDS(on)
gfs
VGS=10V, ID=6.0A
VDS=50V, ID=4.0A
-
0.72
-
0.9
Ω
5.7
-
-
-
-
-
-
-
-
S
Ciss
Coss
Crss
td(on)
tr
-
-
-
-
-
-
-
2700
300
61
VGS=0V, VDS=25V,
f = 1MHz
Output capacitance
Reverse transfer capacitance
Turn on delay time
pF
nS
VDD=0.5BVDSS, ID=12.0A
(MOSFET switching
time are essentially
independent of
18
Rise time
37
Turn off delay time
td(off)
tf
88
Fall time
operating temperature)
36
Total gate charge
(gate-source+gate-drain)
VGS=10V, ID=12.0A,
VDS=0.5BVDSS(MOSFET
Switching time are
Essentially independent of
Operating temperature)
Qg
-
-
140
Gate-source charge
Qgs
Qgd
-
-
20
69
-
-
nC
Gate-drain (Miller) charge
Note:
1. Pulse Test : Pulse width ≤ 300uS, Duty Cycle ≤ 2%
2.MOSFET Switching Time are Essentially Independent of Operating Temperature
1
3. S = ---
R
7
KA5S-SERIES KA5S0765C/KA5S09654QT/KA5S0965/KA5S12656/KA5S1265
Electrical Characteristics (CONTROL Part)
(V =16V, Tamb = 25°C unless otherwise specified)
CC
Parameter
UVLO SECTION
Symbol
Conditions
Min. Typ. Max. Unit
Start Threshold Voltage
StopThreshold Voltage
OSCILLATOR SECTION
Initial Frequency
V
V
V
=GND
14
8
15
9
16
10
V
V
START
FB
FB
V
=GND
STOP
F
-
18
0
20
1
22
3
kHz
%
OSC
Voltage Stability
F
12V ≤ V
≤ 23V
CC
STABLE
Temperature Stability (Note2)
Maximum Duty Cycle
∆F
-25°C ≤ Τa≤ 85°C
0
±5
95
-
±10
98
0
%
OSC
MAX
D
-
-
92
-
%
Minimum Duty Cycle
D
MIN
%
FEEDBACK SECTION
Feedback Source Current
Shutdown Feedback Voltage
Shutdown Delay Current
SYNC. & SOFTSTART SECTION
Softstart Voltage
I
V
V
V
=GND
≥ 6.9V
=5V
0.7
6.9
3.0
0.9
7.5
4.0
1.1
8.1
5.0
mA
V
FB
FB
FB
FB
V
SD
I
µA
DELAY
V
V
V
V
V
=2V
=0V
4.7
5.0
5.3
V
mA
V
SS
FB
SS
CC
CC
Softstart Current
I
0.75 0.95 1.15
SS
Sync High Threshold Voltage(Note3)
Sync Low Threshold Voltage(Note3)
V
=16V , V =5V
FB
-
-
7.0
6.0
-
-
SYNCH
V
=16V , V =5V
FB
V
SYNCL
CURRENT LIMIT(SELF-PROTECTION)SECTION
KA5S0765C
KA5S09654QT
KA5S0965
3.52
3.52
5.28
5.28
7.04
4.0
4.0
6.0
6.0
8.0
4.48
4.48
6.72
6.72
8.96
Peak Current Limit (Note4)
IOVER
A
KA5S12656
KA5S1265
PROTECTION SECTION
Over Voltage Protcetion
V
V
V
≥ 24V
CC
23
0.9
140
25
1.0
160
28
1.1
-
V
V
OVP
Over Current Latch voltage(Note3)
Thermal Shutdown Tempature(Note2)
TOTAL DEVICE SECTION
Start Up Current
-
-
OCL
TSD
°C
I
V
V
V
V
=GND, V =14V
CC
-
-
0.1
7
0.17
12
mA
mA
START
FB
FB
FB
FB
I
=GND, V =16V
CC
OP
OP(MIN)
Operating Supply Current(Note1)
I
=GND, V =12V
CC
I
=GND, V =30V
CC
OP(MAX)
Note:
1. These parameters is the Current Flowing in the Control IC.
2. These parameters, although guaranteed, are not 100% tested in production
3. These parameters, although guaranteed, are tested in EDS(wafer test) process
4. These parameters are indicated Inductor Current.
8
KA5S-SERIES KA5S0765C/KA5S09654QT/KA5S0965/KA5S12656/KA5S1265
Typical Performance Characteristics
Istart(mA)
Iop(mA)
0.12
0.09
0.06
0.03
0.00
12.0
10.0
8.0
6.0
4.0
-25
0
25
50
75
100
125
Temp(
150
-25
0
25
50
75
100
125
Temp(
150
)
)
℃
℃
Figure 1. Start Up Current vs. Temp.
Figure 2. Operating Supply Current vs. Temp.
V
(V)
JTOP
Vs tart(V)
9.30
9.00
8.70
8.40
8.10
15.6
15.3
15.0
14.7
14.4
-25
0
25
50
75
100
125
Temp(
150
-25
0
25
50
75
100
125
Temp(
150
)
)
℃
℃
Figure 4. Start Threshold Voltage
Figure 3. Stop Threshold Voltage
Fosc(kHz)
19.8
19.1
18.4
17.7
17.0
-25
0
25
50
75
100
125
Temp(
150
)
℃
Figure 5. Inital Frequency VS. Temp
9
KA5S-SERIES KA5S0765C/KA5S09654QT/KA5S0965/KA5S12656/
Typical Performance Characteristics(Continued)
Dmax(%)
Ifb(mA)
98.0
96.5
95.0
93.5
92.0
1.10
1.00
0.90
0.80
0.70
-25
0
25
50
75
100
125
Temp(
150
-25
0
25
50
75
100
125
Temp(
150
)
)
℃
℃
Figure 7. Feedback Source Current vs. Temp.
Figure 6. Maximum Duty vs. Temp.
Vs d(V)
Idelay(uA)
7.55
7.50
7.45
7.40
7.35
3.90
3.70
3.50
3.30
-25
0
25
50
75
100
125
Temp(
150
-25
0
25
50
75
100
125
Temp(
150
)
)
℃
℃
Figure 9. Shutdown Delay Current vs. Temp.
Figure 8. Shutdown Feedback Volatge vs. Temp.
Vovp(V)
26.6
Iover(A)
4.20
4.10
4.00
3.90
3.80
25.9
25.2
24.5
23.8
-25
0
25
50
75
100
125
Temp(
150
-25
0
25
50
75
100
125
Temp(
150
)
)
℃
℃
Figure 10. Over Volatge Protection vs. Temp.
Figure 11. Peak Current Limit
10
KA5S-SERIES KA5S0765C/KA5S09654QT/KA5S0965/KA5S12656/KA5S1265
Typical Performance Characteristics(Continued)
Iss(mA)
Vs s (V)
5.10
1.0
5.05
1.0
5.00
0.9
0.8
4.95
4.90
-25
0
25
50
75
100
125
Temp(
150
-25
0
25
50
75
100
125
Temp(
150
)
)
℃
℃
Figure 12. Soft Start Current vs. Temp.
Figure 13. Soft Start Voltage vs. Temp.
11
KA5S-SERIES KA5S0765C/KA5S09654QT/KA5S0965/KA5S12656/
Package Dimensions
TO-3P-5L
12
KA5S-SERIES KA5S0765C/KA5S09654QT/KA5S0965/KA5S12656/KA5S1265
Package Dimensions (Continued)
TO-3P-5L (Forming)
13
KA5S-SERIES KA5S0765C/KA5S09654QT/KA5S0965/KA5S12656/
Package Dimensions (Continued)
TO-220F-5L
14
KA5S-SERIES KA5S0765C/KA5S09654QT/KA5S0965/KA5S12656/KA5S1265
Package Dimensions (Continued)
TO-220F-5L(Forming)
15
KA5S-SERIES KA5S0765C/KA5S09654QT/KA5S0965/KA5S12656/
Package Dimensions (Continued)
TO-220-5L
16
KA5S-SERIES KA5S0765C/KA5S09654QT/KA5S0965/KA5S12656/KA5S1265
Package Dimensions (Continued)
TO-220-5L(Forming)
17
KA5S-SERIES KA5S0765C/KA5S09654QT/KA5S0965/KA5S12656/
TOP Mark and Pinout Information
F
MARKING
Pin No.
Symbol
Drain
Description
SenseFET Drain
YYWW
1
2
3
4
5
GND
Ground (Source)
1
2
3
4
5
V
CC
Control Part Supply Input
PWM Non Inverting Input
Soft start & External Sync.
F/B
S/S
Device
MARKING
KA5S0765C
5S0765C
5S09654
5S0965
KA5S09654QT
KA5S0965
KA5S12656
KA5S1265
5S12656
5S1265
Notes ;
(1) F ; Fairchild Semiconductor
(2) 5S0765C, 5S09654, 5S0965, 5S12656, 5S1265; Device Marking Name
(3) YY: Last Two Digit of Calender Year
(4) WW: Patweek Based on Fairchild Semiconductor Work Month Calender
18
KA5S-SERIES KA5S0765C/KA5S09654QT/KA5S0965/KA5S12656/KA5S1265
Ordering Information
Product Number
KA5S0765C-TU
Package
TO-220-5L
Marking Code
BVdss
Rds(on)
5S0765C
650V
1.6Ω
KA5S0765C-YDTU
TO-220-5L(Forming)
KA5S09654QT-TU
TO-220F-5L
5S09654
5S0965
5S12656
5S1265
650V
650V
650V
650V
1.1Ω
1.2Ω
0.9Ω
0.9Ω
KA5S09654QT-YDTU TO-220F-5L(Forming)
KA5S0965-TU
TO-3P-5L
KA5S0965-YDTU
TO-3P-5L(Forming)
KA5S12656-TU
TO-3P-5L
KA5S12656-YDTU
TO-3P-5L(Forming)
KA5S1265-TU
TO-3P-5L
KA5S1265-YDTU
TO-3P-5L(Forming)
TU : Non Forming Type
YDTU : Forming Type
19
KA5S-SERIES KA5S0765C/KA5S09654QT/KA5S0965/KA5S12656/KA5S1265
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER
DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, and (c) whose failure to
perform when properly used in accordance with
instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury of the
user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
www.fairchildsemi.com
10/17/01 0.0m 001
2001 Fairchild Semiconductor Corporation
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