KA3S1265RD-TU 概述
Fairchild Power Switch(FPS) 飞兆功率开关( FPS ) 开关式稳压器或控制器
KA3S1265RD-TU 规格参数
是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | TO-3P | 包装说明: | ZIP, ZIP5,.2,.1,100TB |
针数: | 2 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8542.39.00.01 |
风险等级: | 5.91 | Is Samacsys: | N |
模拟集成电路 - 其他类型: | SWITCHING REGULATOR | 控制模式: | CURRENT-MODE |
控制技术: | PULSE WIDTH MODULATION | 最大输入电压: | 30 V |
最小输入电压: | 11 V | 标称输入电压: | 14 V |
JESD-30 代码: | R-PSFM-T5 | JESD-609代码: | e0 |
功能数量: | 1 | 端子数量: | 5 |
最高工作温度: | 85 °C | 最低工作温度: | -25 °C |
最大输出电流: | 48 A | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | ZIP | 封装等效代码: | ZIP5,.2,.1,100TB |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 认证状态: | Not Qualified |
子类别: | Switching Regulator or Controllers | 表面贴装: | NO |
切换器配置: | SINGLE | 最大切换频率: | 150 kHz |
温度等级: | OTHER | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | THROUGH-HOLE | 端子节距: | 2.54 mm |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
Base Number Matches: | 1 |
KA3S1265RD-TU 数据手册
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PDF下载www.fairchildsemi.com
KA3S1265R/KA3S1265RF/
KA3S1265RD
Fairchild Power Switch(FPS)
Features
Description
• Wide operatimg frequency range up to (150kHz)
• Pulse by pulse over current limiting
• Over load protection
• Over voltage protecton (Min. 23V)
• Internal thermal shutdown function
• Under voltage lockout
• Internal high voltage sense FET
• External sync terminal
• Auto Restart Mode
The Fairchild Power Switch(FPS) product family is specially
designed for an off line SMPS with minimal external
components. The Fairchild Power Switch(FPS) consist of
high voltage power SenseFET and current mode PWM IC.
Included control IC features a trimmed oscillator, under
voltage lock-out, leading edge blanking, optimized gate
turn-on/turn-off driver, thermal shut down protection, over
voltage protection, temperature compensated precision
current sources for loop compensation and fault protection
circuit. compared to discrete MOSFET and controller or
R
switching converter solution, a Fairchild Power
CC
Switch(FPS) can reduce total component count, design size,
weight and at the same time increase efficiency,
productivity, and system reliability. It has a basic platform
well suited for cost-effective C-TV power supply.
TO-3P-5L
TO-3PF-5L
1
1
1. DRAIN 2. GND 3. Vcc 4. FB 5. Sync
Internal Block Diagram
#3 V
CC
#1 DRAIN
32V
5V
Vref
Internal
bias
SFET
Good
logic
#5 Sync
#4 FB
−
OSC
+
5V
S
R
6.4V
Q
−
L.E.B
0.1V
2.5R
2µA
1mA
9V
+
1R
+
S
#2 GND
−
7.5V
25V
Q
R
Thermal S/D
OVER VOLTAGE S/D
+
Power on reset
−
Rev.1.0.2
©2001 Fairchild Semiconductor Corporation
KA3S1265R/KA3S1265RF/KA3S1265RD
Absolute Maximum Ratings
Characteristic
Symbol
Value
650
Unit
V
Maximum drain voltage (1)
V
D,MAX
V
DGR
Drain-gate voltage (R =1MΩ)
650
V
GS
V
GS
Gate-source (GND) voltage
Drain current pulsed (2)
±30
V
I
DM
48.0
785
A
DC
Single pulsed avalanche energy (3)
mJ
E
AS
I
D
D
Continuous drain current (T =25°C)
12
A
C
DC
DC
V
I
Continuous drain current (T =100°C)
8.4
A
C
V
CC,MAX
Maximum supply voltage
Input voltage range
30
V
FB
−0.3 to V
269
V
SD
P
D
W
W/°C
°C
Total power dissipation
Derating
2.17
T
A
Operating ambient temperature
Storage temperature
−25 to +85
T
STG
−55 to +150
°C
Note:
1. Tj=25°C to 150°C
2. Repetitive rating: Pulse width limited by maximum junction temperature
3. L=10mH, V
50V, R 27Ω, starting Tj=25 °C
G=
DD=
2
KA3S1265R/KA3S1265RF/KA3S1265RD
Electrical Characteristics (SFET part)
(Ta = 25°C unless otherwise specified)
Characteristic
Symbol
BV
Test condition
Min.
Typ. Max. Unit
Drain-source breakdown voltage
V
=0V, I =50µA
650
-
-
-
V
DSS
GS
D
V
V
=Max., Rating,
=0V
DS
GS
-
-
50
µA
Zero gate voltage drain current
I
DSS
V
V
=0.8Max., Rating,
DS
GS
-
200
mA
=0V, T =125°C
C
Static drain-source on resistance (note)
Forward transconductance (note)
Input capacitance
R
V
V
=10V, I =6.0A
D
-
0.72
-
-
-
-
-
-
-
-
-
-
W
S
DS(ON)
GS
DS
gfs
=50V, I =6.0A
D
5.7
Ciss
-
-
-
-
-
-
-
2700
300
61
V
=0V, V =25V,
DS
GS
Output capacitance
Reverse transfer capacitance
Turn on delay time
Coss
Crss
pF
f=1MHz
t
18
d(on)
tr
V
=0.5BV , I =12.0A
DSS D
DD
(MOSFET switching
time are essentially
independent of
Rise time
37
nS
Turn off delay time
t
88
d(off)
tf
operating temperature)
Fall time
36
Total gate charge
(gate-source+gate-drain)
V
V
=10V, I =12.0A,
D
=0.5BV (MOSFET
DSS
GS
DS
Qg
-
-
140
switching time are
essentially independent of
operating temperature)
nC
Gate-source charge
Qgs
-
-
20
69
-
-
Gate-drain (Miller) charge
Qgd
Note:
Pulse test: Pulse width ≤ 300µS, duty cycle ≤ 2%
1
S = ---
R
3
KA3S1265R/KA3S1265RF/KA3S1265RD
Electrical Charcteristics (CONTROL part)
(Ta = 25°C unless otherwise specified)
Characteristic
UVLO SECTION
Symbol
Test condition
Min. Typ. Max. Unit
Start threshold voltage
Stop threshold voltage
V
-
14
9
15
10
16
11
V
V
START
V
After turn on
STOP
OSCILLATOR SECTION
Initial accuracy
FOSC
∆F/∆T
Dmax
Ta=25°C
18
-
20
±5
95
22
±10
98
kHz
%
Frequency change with temperature(2)
−25°C ≤ Ta ≤ +85°C
Maximum duty cycle
-
92
%
FEEDBACK SECTION
Feedback source current
Shutdown feedback voltage
Shutdown delay current
I
Ta=25°C, Vfb=GND
0.8
6.9
1.4
1
1.2
8.1
2.2
mA
V
FB
V
-
7.5
1.8
SD
I
Ta=25°C, 5V ≤ Vfb ≤ V
µA
delay
SD
SYNC. & SOFT START SECTION
Soft start voltage
V
V
=2V
FB
4.7
0.8
5.0
5.4
V
SS
Soft start current
I
Sync & S/S=GND
-
-
mA
SS
Sync threshold voltage
V
KA3S1265R,KA3S1265RF 6.0
6.4
6.8
SYTH
SYTH(ON)
Sync threshold voltage(ON)(3)
Sync threshold voltage(OFF)(3)
V
6.86 7.23 7.60
5.92 6.23 6.54
V
KA3S1265RD
V
SYTH(OFF)
REFERENCE SECTION
Output voltage (1)
Temperature stability (1)(2)
Vref
Ta=25°C
4.80 5.00 5.20
V
Vref/∆T
−25°C ≤ Ta ≤ +85°C
-
0.3
0.6 mV/°C
CURRENT LIMIT (SELF-PROTECTION) SECTION
Peak Current Limit
I
Max. inductor current
-
7.04 8.00 8.96
A
OVER
PROTECTION SECTION
Thermal shutdown temperature (Tj) (1)
TOTAL DEVICE SECTION
Start Up current
T
140 160
-
°C
SD
I
V
=14V
CC
0.1
6
0.3 0.55
mA
mA
V
START
Operating supply current
(Control Part Only)
I
Ta=25°C
=20mA
12
18
35
OP
V
Zener voltage
V
I
CC
30
32.5
cc
Z
Note:
1. These parameters, although guaranteed, are not 100% tested in production
2. These parameters, although guaranteed, are tested in EDS(water test) process
3.The amplitude of the sync. pulse is recommended to be between 2V and 3V for stable sync. function.
4
KA3S1265R/KA3S1265RF/KA3S1265RD
Typical Performance Characteristics
(These characteristic graphs are normalized at Ta = 25°C)
1.2
1.15
1.1
1.2
1.15
1.1
1.05
1.05
IFB
1
Fosc
1
0.95
0.95
0.9
0.9
0.85
0.8
0.85
0.8
-25
0
25
50
75 100 125 150
- 25
0
25 50 75 100 125 150
Temperature [°C]
Temperature [°C]
Figure 1. Operating Frequency
Figure 2. Feedback Source Current
1.1
1.05
1.2
1.15
1.1
Iover
1
0.95
0.9
1.05
Iop
1
0.95
0.9
0.85
0.8
0.85
0.8
-25
0
25 50
75 100 125 150
-25
0
25 50 75 100 125 150
Temperature [°C]
Temperature [°C]
Figure 3. Operating Supply Current
Figure 4. Peak Current Limit
1.5
1.15
1.1
1.3
1.1
0.9
0.7
0.5
1.05
I
V
th(H)
ST
a
1
0.95
0.9
0.85
-25
0
25 50 75 100 125 150
-25
0
25 50 75 100 125 150
Temperature [°C]
Temperature [°C]
Figure 5. Start up Current
Figure 6. Start Threshold Voltage
5
KA3S1265R/KA3S1265RF/KA3S1265RD
Typical Performance Characteristics (Continued)
(These characteristic graphs are normalized at Ta = 25°C)
1.15
1.1
1.15
1.1
1.05
1.05
V
th(L)
1
Dmax 1
0.95
0.95
0.9
0.9
0.85
0.85
-25
0
25 50 75 100 125 150
-25
0
25 50 75 100 125 150
Temperature [°C]
Temperature [°C]
Figure 7. Stop Threshold Voltage
Figure 8. Maximum Duty Cycle
1.2
1.15
1.15
1.1
1.05
1
0.95
0.9
1.1
1.05
Vsd
1
0.95
0.9
Vz
0.85
0.8
0.85
-25
0
25
50
75 100 125 150
-25
0
25
50
75 100 125 150
Temperature [°C]
Temperature [°C]
Figure 9. V
Zener Voltage
Figure 10. Shutdown Feedback Voltage
CC
1.15
1.2
1.15
1.1
1.1
1.05
1.05
Idelay
1
Vovp
1
0.95
0.9
0.85
0.8
0.95
0.9
0.85
-25
0
25 50
75 100 125 150
-25
0
25 50 75 100 125 150
Temperature [°C]
Temperature [°C]
Figure 11. Shutdown Delay Current
Figure 12. Over Voltage Protection
6
KA3S1265R/KA3S1265RF/KA3S1265RD
Typical Performance Characteristics (Continued)
(These characteristic graphs are normalized at Ta = 25°C)
1.15
1.1
2.5
2
1.05
1.5
Vss
1
0.95
0.9
R
RDdSs(oonn)
1
0.5
0
0.85
-25
0
25
50
75 100 125 150
-25
0
25 50 75 100 125 150
Figure 14. Static Drain-Source on Resistance
Figure13. Soft Start Voltage
7
KA3S1265R/KA3S1265RF/KA3S1265RD
Package Dimensions
TO-3P-5L
8
KA3S1265R/KA3S1265RF/KA3S1265RD
Package Dimensions (Continued)
TO-3P-5L (Forming)
9
KA3S1265R/KA3S1265RF/KA3S1265RD
Package Dimensions (Continued)
TO-3PF-5L
10
KA3S1265R/KA3S1265RF/KA3S1265RD
Package Dimensions (Continued)
TO-3PF-5L(Forming)
11
KA3S1265R/KA3S1265RF/KA3S1265RD
Ordering Information
Product Number
KA3S1265R-YDTU
KA3S1265R-TU
Package
Rating
Operating Temperature
TO-3P-5L
650V, 12A
-25°C to +85°C
TO-3P-5L(Forming)
KA3S1265RF-YDTU
KA3S1265RF-TU
TO-3PF-5L
650V, 12A
650V, 12A
-25°C to +85°C
-25°C to +85°C
TO-3PF-5L(Forming)
KA3S1265RD-YDTU
KA3S1265RD-TU
TO-3P-5L
TO-3P-5L(Forming)
TU : Non Forming Type
YDTU : Forming Type
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER
DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, and (c) whose failure to
perform when properly used in accordance with
instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury of the
user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
www.fairchildsemi.com
10/17/01 0.0m 001
Stock#DSxxxxxxxx
2001 Fairchild Semiconductor Corporation
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