KA2S0965-TU [FAIRCHILD]
Fairchild Power Switch(SPS); 飞兆功率开关( SPS )型号: | KA2S0965-TU |
厂家: | FAIRCHILD SEMICONDUCTOR |
描述: | Fairchild Power Switch(SPS) |
文件: | 总12页 (文件大小:85K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
www.fairchildsemi.com
KA2S0965/KA2S09655
Fairchild Power Switch(SPS)
Features
Description
• Wide operatimg frequency range up to (150kHz)
• Pulse by pulse over current limiting
• Over load protection
• Over voltage protecton (Min. 23V)
• Internal thermal shutdown function
• Under voltage lockout
• Internal high voltage sense FET
• External sync terminal
• Latch up Mode
The SPS product family is specially designed for an offline
SMPS with minimal external components. The SPS consist
of high voltage power SenseFET and current mode PWM
Controller IC. control IC features a trimmed oscillator, under
voltage lock-out, leading edge blanking, optimized gate turn-
on/turn-off driver, thermal shut down protection, over volt-
age protection, temperature compensated precision current
sources for loop compensation and fault protection circuit.
Compared to discrete MOSFET and controller or RCC
switching converter solution, a SPS can reduce total compo-
nent count, design size, weight and at the same time increase
&efficiency, productivity, and system reliability. It has a
basic platform well suited for cost-effective Monitor power
supply.
TO-3P-5L
1
1. DRAIN 2. GND 3. Vcc 4. FB 5. Sync
Internal Block Diagram
#3 V
CC
#1 DRAIN
Internal
bias
32V
5V
Vref
SFET
Good
logic
#5 Sync
#4 FB
−
OSC
+
5V
S
R
6.4V
Q
−
L.E.B
0.1V
2.5R
2µA
1mA
9V
+
1R
+
S
R
#2 GND
−
7.5V
25V
Q
Thermal S/D
OVER VOLTAGE S/D
+
Power on reset
−
Rev. .5.0
©2000 Fairchild Semiconductor International
KA2S0965/KA2S09655
Absolute Maximum Ratings
Characteristic
Symbol
Value
650
Unit
V
Drain-source (GND) voltage (1)
V
DSS
V
DGR
Drain-Gate voltage (R =1MΩ)
650
V
GS
V
GS
Gate-source (GND) voltage
Drain current pulsed (2)
±30
V
I
DM
36.0
950
A
DC
Single pulsed avalanche energy (3)
mJ
E
AS
I
D
Continuous drain current (T =25°C)
9.0
A
C
DC
DC
V
I
D
Continuous drain current (T =100°C)
5.8
A
C
V
CC
Supply voltage
30
V
FB
Analog input voltage range
−0.3 to V
170
V
SD
P
D
W
W/°C
°C
Total power dissipation
Derating
1.33
T
OPR
Operating temperature
Storage temperature
−25 to +85
T
STG
−55 to +150
°C
Notes:
1.Tj=25°C to 150°C
2.Repetitive rating: Pulse width limited by maximum junction temperature
3.L=20mH, V =50V, R =27Ω, starting Tj=25 °C
DD
G
2
KA2S0965/KA2S09655
Electrical Characteristics (SFET part)
(Ta = 25°C unless otherwise specified)
Characteristic
Symbol
Test condition
Min.
Typ. Max. Unit
Drain-source breakdown voltage
BVDSS
V
=0V, I =50µA
650
−
−
−
V
GS
D
V
V
=Max., Rating,
=0V
DS
GS
−
−
50
µA
Zero gate voltage drain current
IDSS
V
V
=0.8Max., Rating,
DS
GS
−
200
µA
=0V, T =125°C
C
Static drain-source on resistance (note) RDS(ON)
V
V
=10V, I =4.5A
D
−
5.0
−
0.96
−
1.2
−
Ω
GS
DS
Forward transconductance (note)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn on delay time
Rise time
gfs
Ciss
Coss
Crss
td(on)
tr
=50V, I =4.5A
D
S
1750
190
78
−
V
=0V, V =25V,
DS
GS
−
−
pF
nS
f=1MHz
−
−
−
20
50
55
180
70
V
=0.5BV , I =9.0A
DSS D
DD
(MOSFET switching
time are essentially
independent of
−
23
Turn off delay time
Fall time
td(off)
tf
−
85
operating temperature)
−
30
Total gate charge
(gate-source+gate-drain)
V
V
=10V, I =9.0A,
D
=0.5BV (MOSFET
DSS
GS
DS
Qg
−
74
95
switching time are
essentially independent of
operating temperature)
nC
Gate-source charge
Qgs
Qgd
−
−
12
−
−
Gate-drain (Miller) charge
35.4
Note:
Pulse test: Pulse width < 300µS, duty cycle < 2%
1
S = ---
R
3
KA2S0965/KA2S09655
Electrical Charcteristics (CONTROL part)
(Ta = 25°C unless otherwise specified)
Characteristic
REFERENCE SECTION
Output voltage (1)
Symbol
Test condition
Min.
Typ. Max.
Unit
Vref
Ta=25°C
4.80
5.00
0.3
5.20
0.6
V
Temperature Stability (1)(2)
OSCILLATOR SECTION
Initial accuracy
−25°C≤Ta≤+85°C
−
mV/°C
Vref/∆T
F
OSC
Ta=25°C
18
−
20
±5
22
±10
6.8
kHz
%
Frequency change with temperature (2)
Sync threshold voltage(3)
PWM SECTION
−25°C≤Ta≤+85°C
Vfb=5V
∆F/∆T
V
SYTH
6.0
6.4
V
Dmax
Maximum duty cycle
−
92
95
98
%
FEEDBACK SECTION
Feedback source current
Shutdown delay current
I
FB
Ta=25°C, Vfb=GND
Ta=25°C, 5V≤Vfb≤V
0.8
1.4
1
1.2
2.2
mA
I
delay
1.8
µA
SD
OVER CURRENT PROTECTION SECTION
5.28
4.40
6.00
5.00
6.72
5.60
KA2S0965
Over current protection
I (max)
L
A
KA2S09655
UVLO SECTION
V
th(H)
Start threshold voltage
Minimum operating voltage
TOTAL STANDBY CURRENT SECTION
Start current
−
14
9
15
10
16
11
V
V
V
th(L)
After turn on
I
ST
V
=14V
CC
0.1
6
0.3
12
0.55
18
mA
mA
V
I
OPR
Operating supply current
(control part only)
Ta=25°C
V
Z
V
CC
zener voltage
I
=20mA
CC
30
32.5
35
SHUTDOWN SECTION
Shutdown Feedback voltage
Thermal shutdown temperature (Tj) (1)
SOFT START SECTION
Soft start current
V
SD
−
−
6.9
7.5
8.1
V
T
SD
140
160
−
°C
I
SS
Sync & S/S=GND
=2V
0.8
4.7
−
−
mA
V
V
SS
Soft start voltage
V
5.0
5.3
FB
NOTE:
1. These parameters, although guaranteed, are not 100% tested in production
2. These parameters, although guaranteed, are tested in EDS(water test) process
3.The amplitude of the sync. pulse is recommended to be between 2V and 3V for stable sync. function.
4
KA2S0965/KA2S09655
Typical Performance Characteristics
(These characteristic graphs are normalized at Ta = 25°C)
1.2
1.15
1.1
1.2
1.15
1.1
1.05
1.05
IFB
1
Fosc
1
0.95
0.95
0.9
0.9
0.85
0.8
0.85
0.8
-25
0
25
50
75 100 125 150
- 25
0
25 50 75 100 125 150
Temperature [°C]
Temperature [°C]
Figure 1. Operating Frequency
Figure 2. Feedback Source Current
1.1
1.05
1.2
1.15
1.1
I
L(MAX)
1
0.95
0.9
1.05
l
OPR
1
0.95
0.9
0.85
0.8
0.85
0.8
-25
0
25 50
75 100 125 150
-25
0
25 50 75 100 125 150
Temperature [°C]
Temperature [°C]
Figure 3. Operating Current
Figure 4. Max. Inductor Current
1.5
1.15
1.1
1.3
1.1
0.9
0.7
0.5
1.05
I
V
th(H)
ST
a
1
0.95
0.9
0.85
-25
0
25 50 75 100 125 150
-25
0
25 50 75 100 125 150
Temperature [°C]
Temperature [°C]
Figure 5. Start up Current
Figure 6. Start Threshold Voltage
5
KA2S0965/KA2S09655
Typical Performance Characteristics (Continued)
(These characteristic graphs are normalized at Ta = 25°C)
1.15
1.15
1.1
1.1
1.05
1.05
V
th(L)
1
Dmax 1
0.95
0.95
0.9
0.9
0.85
0.85
-25
0
25 50 75 100 125 150
-25
0
25 50 75 100 125 150
Temperature [°C]
Temperature [°C]
Figure 7. Stop Threshold Voltage
Figure 8. Maximum Duty Cycle
1.2
1.15
1.15
1.1
1.05
1
0.95
0.9
1.1
1.05
Vsd
1
0.95
0.9
Vz
0.85
0.8
0.85
-25
0
25
50
75 100 125 150
-25
0
25
50
75 100 125 150
Temperature [°C]
Temperature [°C]
Figure 9. V
Zener Voltage
Figure 10. Shutdown Feedback Voltage
CC
1.15
1.2
1.15
1.1
1.1
1.05
1.05
Idelay
1
Vovp
1
0.95
0.9
0.85
0.8
0.95
0.9
0.85
-25
0
25 50
75 100 125 150
-25
0
25 50 75 100 125 150
Temperature [°C]
Temperature [°C]
Figure 11. Shutdown Delay Current
Figure 12. Over Voltage Protection
6
KA2S0965/KA2S09655
Typical Performance Characteristics (Continued)
(These characteristic graphs are normalized at Ta = 25°C)
1.15
2.5
2
1.1
1.05
1.5
Vss
1
Rdson
0.95
0.9
1
0.5
0
0.85
-25
0
25
50
75 100 125 150
-25
0
25 50 75 100 125 150
Figure 14. Drain Source Turn-on Resistance
Figure13. Soft Start Voltage
7
KA2S0965/KA2S09655
Package Dimensions
TO-3P-5L
8
KA2S0965/KA2S09655
Package Dimensions (Continued)
TO-3P-5L (Forming)
9
KA2S0965/KA2S09655
Ordering Information
Product Number
KA2S0965-TU
Package
Rating
Over current protection
TO-3P-5L
650V, 9A
6A
KA2S0965-YDTU
TO-3P-5L(Forming)
KA2S09655-TU
TO-3P-5L
650V, 9A
5A
KA2S09655-YDTU
TO-3P-5L(Forming)
TU : Non Forming Type
YDTU : Forming Type
10
KA2S0965/KA2S09655
11
KA2S0965/KA2S09655
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER
DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL. As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, and (c) whose failure to
perform when properly used in accordance with
instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury of the
user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
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9/7/00 0.0m 001
Stock#DSxxxxxxxx
2000 Fairchild Semiconductor International
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