KA1M0880BTU [FAIRCHILD]
Fairchild Power Switch(FPS); 飞兆功率开关( FPS )型号: | KA1M0880BTU |
厂家: | FAIRCHILD SEMICONDUCTOR |
描述: | Fairchild Power Switch(FPS) |
文件: | 总10页 (文件大小:118K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
www.fairchildsemi.com
KA1L0880B/KA1M0880B
Fairchild Power Switch(FPS)
Features
Description
• Precision fixed operating frequency
• KA1L0880B(50KHz),KA1M0880B(67KHz)
• Pulse by pulse over current limiting
• Over load protection
• Over voltage protection (Min. 23V)
• Internal thermal shutdown function
• Under voltage lockout
The Fairchild Power Switch(FPS) product family is specially
designed for an off-line SMPS with minimal external
components. The Fairchild Power Switch(FPS) consist of high
voltage power SenseFET and current mode PWM controller IC.
PWM controller features integrated fixed oscillator, under
voltage lock out, leading edge blanking, optimized gate turn-on/
turn-off driver, thermal shut down protection, over voltage
protection, temperature compensated precision current sources
for loop compensation and fault protection circuit. compared to
• Internal high voltage sense FET
• Latch up mode
• Soft start
discrete MOSFET and controller or R switching converter
CC
solution, a Fairchild Power Switch(FPS) can reduce total
component count, design size, weight and at the same time
increase & efficiency, productivity, and system reliability. It has
a basic platform well suited for cost effective design in either a
flyback converter or a forward converter.
TO-3P-5L
1
1. DRAIN 2. GND 3. V
4. FB 5. S/S
CC
Internal Block Diagram
#3 V
CC
#1 DRAIN
32V
5V
Vref
Internal
bias
SFET
Good
logic
#5 Soft Start
OSC
5V
S
R
Q
−
#4 FB
L.E.B
2.5R
5µA
1mA
9V
+
1R
0.1V
+
S
R
#2 GND
−
7.5V
25V
Q
Thermal S/D
OVER VOLTAGE S/D
+
Power on reset
−
Rev.1.0.2
©2001 Fairchild Semiconductor Corporation
KA1L0880B/KA1M0880B
Absolute Maximum Ratings
Parameter
Maximum Drain voltage (1)
Symbol
Value
800
Unit
V
V
D,Max
Drain-Gate voltage (R =1MΩ)
V
DGR
800
V
GS
Gate-source (GND) voltage
Drain current pulsed (2)
Single pulsed avalanche energy (3)
Avalanche current (4)
V
±30
V
GS
DM
I
32.0
810
A
DC
E
I
mJ
A
AS
15
AS
Continuous drain current (T =25°C)
I
I
8.0
A
C
D
D
DC
DC
V
Continuous drain current (T =100°C)
5.6
A
C
Maximum Supply voltage
Input voltage range
V
30
CC,MAX
V
−0.3 to V
190
V
FB
SD
P
W
W/°C
°C
D
Total power dissipation
Derating
1.54
Operating ambient temperature
Storage temperature
T
−25 to +85
A
T
−55 to +150
°C
STG
Notes:
1. Tj=25°C to 150°C
2. Repetitive rating: Pulse width limited by maximum junction temperature
3. L=24mH, V =50V, R =25Ω, starting Tj=25°C
DD
G
4. L=13µH, starting Tj=25°C
2
KA1L0880B/KA1M0880B
Electrical Characteristics (SFET part)
(Ta=25°C unless otherwise specified)
Parameter
Symbol
BV
Condition
Min.
Typ. Max. Unit
Drain source breakdown voltage
V
=0V, I =50µA
800
-
-
V
DSS
GS
D
V
V
=Max., Rating,
=0V
DS
GS
-
-
-
50
µA
Zero gate voltage drain current
I
DSS
V
V
=0.8Max., Rating,
DS
-
200
µA
=0V, T =125°C
GS
C
Static drain source on resistance (note)
Forward transconductance (note)
Input capacitance
R
V
V
=10V, I =5.0A
D
-
1.2
2.5
2460
210
64
1.5
-
Ω
DS(ON)
GS
DS
gfs
=15V, I =5.0A
D
1.5
S
Ciss
-
-
-
-
-
-
-
-
V
=0V, V =25V,
GS DS
Output capacitance
Reverse transfer capacitance
Turn on delay time
Coss
Crss
-
pF
nS
f=1MHz
-
t
V
=0.5BV
DD
, I =8.0A
DSS D
-
90
200
450
150
d(on)
tr
(MOSFET switching
time are essentially
independent of
Rise time
95
Turn off delay time
t
150
60
d(off)
tf
Fall time
operating temperature)
Total gate charge
(gate-source+gate-drain)
V
V
=10V, I =8.0A,
D
=0.5BV (MOSFET
DSS
GS
DS
Qg
-
-
150
switching time are
essentially independent of
operating temperature)
nC
Gate source charge
Qgs
Qgd
-
-
20
70
-
-
Gate drain (Miller) charge
Note:
Pulse test: Pulse width ≤ 300µS, duty cycle ≤ 2%
1
S = ---
R
3
KA1L0880B/KA1M0880B
Electrical Characteristics (CONTROL part)
(Ta=25°C unless otherwise specified)
Parameter
UVLO SECTION
Symbol
Condition
-
Min.
Typ. Max.
Unit
Start threshold voltage
Stop threshold voltage
OSCILLATOR SECTION
V
14
9
15
10
16
11
V
V
START
V
After turn on
STOP
KA1L0880B
45
61
-
50
67
±5
77
55
73
Initial accuracy
F
kHz
OSC
KA1M0880B
Frequency change with temperature (2)
Maximum duty cycle
∆F/∆T
−25°C ≤ Ta ≤ +85°C
±10
80
%
%
Dmax
74
FEEDBACK SECTION
Feedback source current
Shutdown Feedback voltage
Shutdown delay current
SOFT START SECTION
Soft Start Voltage
I
Ta=25°C, 0V ≤ Vfb ≤ 3V
0.7
6.9
4.0
0.9
7.5
5.0
1.1
8.1
6.0
mA
V
FB
V
-
SD
Idelay
Ta=25°C, 5V ≤ Vfb ≤ V
µA
SD
V
V
FB
=2V
4.7
0.8
5.0
1.0
5.3
1.2
V
SS
Soft Start Current
I
Sync & S/S=GND
mA
SS
REFERENCE SECTION
Output voltage (1)
Temperature Stability (1)(2)
Vref
Ta=25°C
4.80
-
5.00
0.3
5.20
0.6
V
Vref/∆T
−25°C ≤ Ta ≤ +85°C
mV/°C
CURRENT LIMIT (SELF-PROTECTION) SECTION
Peak Current Limit
I
Max. inductor current
4.40
5.00
5.60
A
OVER
PROTECTION SECTION
Thermal shutdown temperature (Tj) (1)
Over voltage protection voltage
TOTAL DEVICE SECTION
Start Up current
T
-
-
140
23
160
25
-
°C
SD
V
28
V
OVP
I
V
=14V
0.1
6
0.3
12
0.45
18
mA
mA
V
START
CC
Operating supply current
(control part only)
I
Ta=25°C
OP
V
zener voltage
V
I
=20mA
CC
30
32.5
35
CC
Z
Note:
1. These parameters, although guaranteed, are not 100% tested in production
2. These parameters, although guaranteed, are tested in EDS (wafer test) process
4
KA1L0880B/KA1M0880B
Typical Performance Characteristics
(These characteristic graphs are normalized at Ta=25°C)
1.2
1.15
1.1
1.2
1.15
1.1
1.05
1.05
Ifb
1
0.95
0.9
Fosc
1
0.95
0.9
0.85
0.8
0.85
0.8
-25
0
25
50
75 100 125 150
- 25
0
25 50 75 100 125 150
Temperature [°C]
Temperature [°C]
Figure 1. Operating Frequency
Figure 2. Feedback Source Current
1.1
1.05
1.2
1.15
1.1
I
over
1
0.95
0.9
1.05
I
OP
1
0.95
0.9
0.85
0.8
0.85
0.8
-25
0
25 50
75 100 125 150
-25
0
25 50 75 100 125 150
Temperature [°C]
Temperature [°C]
Figure 3. Operating Supply Current
Figure 4. Peak Current Limit
1.5
1.15
1.1
1.3
1.1
0.9
0.7
0.5
1.05
I
V
ST
th(H)
1
0.95
0.9
0.85
-25
0
25 50 75 100 125 150
-25
0
25 50 75 100 125 150
Temperature [°C]
Temperature [°C]
Figure 5. Start up Current
Figure 6. Start Threshold Voltage
5
KA1L0880B/KA1M0880B
Typical Performance Characteristics (Continued)
(These characteristic graphs are normalized at Ta=25°C)
1.15
1.15
1.1
1.1
1.05
1.05
V
th(L)
1
Dmax 1
0.95
0.95
0.9
0.9
0.85
0.85
-25
0
25 50 75 100 125 150
-25
0
25 50 75 100 125 150
Temperature [°C]
Temperature [°C]
Figure 7. Stop Threshold Voltage
Figure 8. Maximum Duty Cycle
1.2
1.15
1.15
1.1
1.05
1
0.95
0.9
1.1
1.05
Vsd
1
0.95
0.9
Vz
0.85
0.8
0.85
-25
0
25
50
75 100 125 150
-25
0
25
50
75 100 125 150
Temperature [°C]
Temperature [°C]
Figure 9. V
Zener Voltage
Figure 10. Shutdown Feedback Voltage
CC
1.15
1.2
1.15
1.1
1.1
1.05
1.05
Idelay
1
Vovp
1
0.95
0.9
0.85
0.8
0.95
0.9
0.85
-25
0
25 50
75 100 125 150
-25
0
25 50 75 100 125 150
Temperature [°C]
Temperature [°C]
Figure 11. Shutdown Delay Current
Figure 12. Over Voltage Protection
6
KA1L0880B/KA1M0880B
Typical Performance Characteristics (Continued)
(These characteristic grahps are normalized at Ta=25°C)
1.15
2.5
2
1.1
1.05
1.5
)
Vss
1
(
Rdson
0.95
0.9
1
0.5
0
0.85
-25
0
25
50
75 100 125 150
-25
0
25 50 75 100 125 150
Temperature [°C]
Temperature [°C]
Figure 13. Soft Start Voltage
Figure 14. Static Drain Source on Resistance
7
KA1L0880B/KA1M0880B
Package Dimensions
TO-3P-5L
8
KA1L0880B/KA1M0880B
Package Dimensions
TO-3P-5L (Forming)
9
KA1L0880B/KA1M0880B
Ordering Information
Product Number
Package
Rating
Fosc
KA1L0880B-TU
TO-3P-5L
800V, 8A
50kHz
KA1L0880B-YDTU
TO-3P-5L(Forming)
KA1M0880B-TU
TO-3P-5L
800V, 8A
67kHz
KA1M0880B-YDTU
TO-3P-5L(Forming)
TU : Non Forming Type
YDTU : Forming type
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER
DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, and (c) whose failure to
perform when properly used in accordance with
instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury of the
user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
www.fairchildsemi.com
10/17/01 0.0m 001
Stock#DSxxxxxxxx
2001 Fairchild Semiconductor Corporation
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