IRF610AJ69Z [FAIRCHILD]
Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 3 PIN;
| 型号： | IRF610AJ69Z |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 3 PIN 局域网 开关 脉冲 晶体管 |
| 文件： | 总7页 (文件大小：251K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRF610A
Advanced Power MOSFET
FEATURES
BVDSS = 200 V
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
W
RDS(on) = 1.5
ID = 3.3 A
Improved Gate Charge
Extended Safe Operating Area
TO-220
m
Lower Leakage Current : 10 A (Max.) @ VDS = 200V
Low RDS(ON) : 1.169 (Typ.)
W
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
Characteristic
Value
Units
VDSS
Drain-to-Source Voltage
Continuous Drain Current (TC=25 o
Continuous Drain Current (TC=100 o
V
200
3.3
2.1
10
)
C
ID
A
)
C
IDM
VGS
EAS
IAR
Drain Current-Pulsed
A
V
1
O
+
_
Gate-to-Source Voltage
30
Single Pulsed Avalanche Energy
Avalanche Current
2
O
44
mJ
A
3.3
3.8
5.0
38
1
O
EAR
dv/dt
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (TC=25 o
mJ
V/ns
W
1
O
3
O
)
C
PD
TJ , TSTG
TL
Linear Derating Factor
0.31
W/oC
Operating Junction and
- 55 to +150
300
Storage Temperature Range
oC
Maximum Lead Temp. for Soldering
Purposes, 1/8 “ from case for 5-seconds
Thermal Resistance
Symbol
RqJC
Characteristic
Junction-to-Case
Case-to-Sink
Typ.
Max.
3.28
--
Units
--
0.5
--
oC/W
RqCS
RqJA
Junction-to-Ambient
62.5
Rev. B
©1999 Fairchild Semiconductor Corporation
N-CHANNEL
POWER MOSFET
IRF610A
Electrical Characteristics (TC=25oCunless otherwise specified)
Symbol
Characteristic
Min. Typ. Max. Units
Test Condition
BVDSS
m
VGS=0V,ID=250 A
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
V
V/oC
200 --
--
BV/ T
m
A
D
D
ID=250
See Fig 7
J
-- 0.23 --
VGS(th)
VDS=5V,I =250 A
m
V
2.0
--
--
--
4.0
D
VGS=30V
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
100
IGSS
nA
V
GS=-30V
VDS=200V
DS=160V,TC=125
--
-- -100
--
--
--
10
IDSS
Drain-to-Source Leakage Current
oC
A
m
V
--
100
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
4
RDS(on)
VGS=10V,ID=1.65A
VDS=40V,ID=1.65A
--
--
1.5
W
O
gfs
Ciss
Coss
Crss
td(on)
tr
4
--
--
--
--
--
--
--
--
--
--
--
1.31 --
160 210
W
O
VGS=0V,VDS=25V,f =1MHz
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
44
18
30
30
50
35
10
--
35
14
10
10
20
12
7
pF
See Fig 5
VDD=100V,ID=3.3A,
R =24
ns
W
G
td(off)
tf
Turn-Off Delay Time
Fall Time
See Fig 13
4
5
O
O
Qg
Total Gate Charge
Gate-Source Charge
Gate-Drain( “Miller” ) Charge
V
DS=160V,VGS=10V,
Qgs
Qgd
nC
1.5
3.5
ID=3.3A
4
5
O
O
--
See Fig 6 & Fig 12
Source-Drain Diode Ratings and Characteristics
Symbol
IS
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
--
--
--
--
--
--
3.3
10
1.5
--
Integral reverse pn-diode
in the MOSFET
A
ISM
1
O
--
T =25o ,I =3.3A,VGS=0V
VSD
trr
V
4
O
C
J
S
107
T =25o ,I =3.3A
C
J F
ns
4
O
Qrr
C
m
-- 0.33 --
di /dt=100A/ s
m
F
Notes ;
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
1
O
L=6mH, IAS=3.3A, VDD=50V, RG=27W, Starting TJ =25oC
2
O
ISD_ 3.3A, di/dt 140A/ ms, VDD _BVDSS , Starting TJ =25 o
3
_
<
C
<
<
O
_
<
4
Pulse Test : Pulse Width = 250 s, Duty Cycle 2%
m
O
Essentially Independent of Operating Temperature
5
O
N-CHANNEL
POWER MOSFET
IRF610A
Fig 1. Output Characteristics
Fig 2. Transfer Characteristics
1
1
10
10
VGS
Top :
1 5 V
1 0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
0
10
Bottom : 4.5 V
150 o
C
0
10
25 o
C
@ Notes :
1. V = 0 V
GS
-1
- 55o
C
@ Notes :
1. 250 s Pulse Test
2. V = 40 V
DS
3. 250 s Pulse Test
10
m
m
2. TC = 25o
C
-1
10
-1
0
1
2
4
6
8
10
10
10
10
V , Gate-Source Voltage [V]
V , Drain-Source Voltage [V]
GS
DS
Fig 3. On-Resistance vs. Drain Current
Fig 4. Source-Drain Diode Forward Voltage
1
4
3
2
1
0
10
V
= 10 V
GS
0
10
o
@ Notes :
150
C
V
= 20 V
GS
1. V = 0 V
GS
o
25
C
o
2. 250 s Pulse Test
m
@ Note : T = 25
J
C
-1
10
0.4
0.6
0.8
1.0
1.2
1.4
0
2
4
6
8
10
V , Source-Drain Voltage [V]
I , Drain Current [A]
SD
D
Fig 5. Capacitance vs. Drain-Source Voltage
Fig 6. Gate Charge vs. Gate-Source Voltage
300
200
100
0
C
iss= Cgs+ Cgd ( Cds= shorted )
V
DS = 40 V
DS = 100 V
DS = 160 V
Coss= Cds+ C
gd
10
Crss= C
gd
V
C iss
V
5
C oss
@ Notes :
1. VGS = 0 V
2. f = 1 MHz
C rss
@ Notes : ID = 3.3 A
6
0
0
1
0
2
4
8
10
10
Q , Total Gate Charge [nC]
V , Drain-Source Voltage [V]
G
DS
N-CHANNEL
POWER MOSFET
IRF610A
Fig 7. Breakdown Voltage vs. Temperature
Fig 8. On-Resistance vs. Temperature
1.2
1.1
1.0
0.9
0.8
3.0
2.5
2.0
1.5
1.0
0.5
0.0
@ Notes :
1. VGS = 10 V
2. I = 1.65 A
D
@ Notes :
1. VGS = 0 V
2. I = 250
A
m
D
-75
-50
-25
0
25
50
75
100
125
150
175
-75
-50
-25
0
25
50
75
100
125
150
175
T , Junction Temperature [ oC]
T , Junction Temperature [ oC]
J
J
Fig 9. Max. Safe Operating Area
Fig 10. Max. Drain Current vs. Case Temperature
4
2
10
Operation in This Area
is Limited by RDS(on)
1
3
2
1
0
10
100
s
m
1 ms
10 ms
DC
0
10
@ Notes :
-1
10
1. T = 25o
C
C
2. T = 150o
C
J
3. Single Pulse
-2
10
0
1
2
25
50
75
100
125
150
10
10
10
T , Case Temperature [ oC]
V , Drain-Source Voltage [V]
c
DS
Fig 11. Thermal Response
D=0.5
100
0.2
@
Notes :
1. Zq JC(t)=3.28 oC/W Max.
0.1
2. Duty Factor, D=t/t2
1
0.05
3. TJM-TC=PDM*ZqJC(t)
PDM
10-1
0.02
0.01
single pulse
t1
t2
10-2
10-5
10-4
10-3
10-2
10-1
100
101
t1 , Square Wave Pulse Duration [sec]
N-CHANNEL
POWER MOSFET
IRF610A
Fig 12. Gate Charge Test Circuit & Waveform
“ Current Regulator ”
VGS
Same Type
as DUT
50KW
Qg
12V
200nF
10V
300nF
VDS
Qgs
Qgd
VGS
DUT
R2
3mA
R1
Charge
Current Sampling (IG) Current Sampling (ID)
Resistor Resistor
Fig 13. Resistive Switching Test Circuit & Waveforms
RL
Vout
Vin
Vout
90%
VDD
( 0.5 rated VDS
)
RG
DUT
10%
Vin
10V
td(on)
tr
td(off)
tf
t on
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
2
2
LL
ID
----
--------------------
EAS
=
LL IAS
BVDSS -- VDD
VDS
BVDSS
IAS
Vary tp to obtain
required peak ID
RG
ID (t)
VDD
C
DUT
VDS (t)
VDD
10V
t p
t p
Time
N-CHANNEL
POWER MOSFET
IRF610A
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
VDS
--
I S
L
Driver
VGS
Same Type
as DUT
RG
VDD
VGS
• dv/dt controlled by “RG”
• IS controlled by Duty Factor “D”
Gate Pulse Width
VGS
--------------------------
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I S
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
Vf
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
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POP™
PowerTrench™
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UHC™
VCX™
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FACT™
FACT Quiet Series™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
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HiSeC™
DISCLAIMER
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NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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