H11AV1SV-M [FAIRCHILD]
PHOTOTRANSISTOR OPTOCOUPLERS; 光电晶体管光耦合器
| 型号： | H11AV1SV-M |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | PHOTOTRANSISTOR OPTOCOUPLERS |
| 文件： | 总10页 (文件大小：525K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PHOTOTRANSISTOR OPTOCOUPLERS
H11AV1-M
H11AV1A-M
H11AV2-M
H11AV2A-M
PACKAGE OUTLINE
SCHEMATIC
1
2
3
6
5
4
6
6
NC
1
H11AV1S-M, H11AV2S-M
1
PIN 1. ANODE
2. CATHODE
H11AV1-M, H11AV2-M
3. NO CONNECTION
4. EMITTER
5. COLLECTOR
6. BASE
6
1
H11AV1A-M, H11AV2A-M
DESCRIPTION
The general purpose optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin
dual in-line white package.
FEATURES
•
•
•
•
H11AV1 and H11AV2 feature 0.3" input-output lead spacing
H11AV1A and H11AV2A feature 0.4" input-output lead spacing
UL recognized (File #E90700, Vol. 2)
VDE recognized (File #102497)
- Add option V (e.g., H11AV1AV-M)
APPLICATIONS
•
•
•
Power supply regulators
Digital logic inputs
Microprocessor inputs
© 2005 Fairchild Semiconductor Corporation
Page 1 of 10
6/15/05
PHOTOTRANSISTOR OPTOCOUPLERS
H11AV1-M
H11AV1A-M
H11AV2-M
H11AV2A-M
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise specified)
A
Parameter
Symbol
Value
Units
TOTAL DEVICE
T
Storage Temperature
-40 to +150
-40 to +100
°C
°C
STG
T
Operating Temperature
OPR
T
Wave solder temperature (see page 9 for reflow solder profiles)
260 for 10 sec
250
°C
mW
SOL
Total Device Power Dissipation @ T = 25°C
A
P
D
Derate above 25°C
2.94
mW/°C
EMITTER
I
DC/Average Forward Input Current
Reverse Input Voltage
60
mA
F
V
6
V
R
D
120
1.41
mW
LED Power Dissipation @ T = 25°C
A
P
Derate above 25°C
mW/°C
DETECTOR
V
V
V
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Collector Voltage
70
70
V
V
CEO
CBO
ECO
7
V
150
1.76
mW
Detector Power Dissipation @ T = 25°C
Derate above 25°C
A
P
D
mW/°C
© 2005 Fairchild Semiconductor Corporation
Page 2 of 10
6/15/05
PHOTOTRANSISTOR OPTOCOUPLERS
H11AV1-M
H11AV1A-M
H11AV2-M
H11AV2A-M
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
A
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameter
EMITTER
Test Conditions
Symbol
Min
Typ*
Max
Unit
Input Forward Voltage (I = 10 mA)
T = 25°C
0.8
0.9
0.7
1.18
1.28
1.05
1.5
1.7
1.4
10
F
A
T = -55°C
V
V
A
F
T = 100°C
A
Reverse Leakage Current
DETECTOR
(V = 6.0 V)
I
µA
R
R
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector-Emitter Dark Current
Collector-Base Dark Current
Capacitance
(I = 1.0 mA, I = 0)
BV
BV
BV
70
70
7
100
120
10
1
V
V
C
F
CEO
CBO
ECO
(I = 100 µA, I = 0)
C
F
(I = 100 µA, I = 0)
V
E
F
(V = 10 V, I = 0)
I
I
50
nA
nA
pF
CE
F
CEO
CBO
(V = 10 V)
0.5
8
CB
(V = 0 V, f = 1 MHz)
C
CE
CE
ISOLATION CHARACTERISTICS
Characteristic
Test Conditions Symbol Min
Typ*
Max
Units
Input-Output Isolation Voltage
Isolation Resistance
(f = 60 Hz, t = 1 sec)
V
7500
Vac(pk)
Ω
ISO
11
(V = 500 VDC)
R
C
10
I-O
ISO
ISO
Isolation Capacitance
(V = 0 V, f = 1 MHz)
0.2
2
pF
I-O
Note
* Typical values at T = 25°C
A
© 2005 Fairchild Semiconductor Corporation
Page 3 of 10
6/15/05
PHOTOTRANSISTOR OPTOCOUPLERS
H11AV1-M
H11AV1A-M
H11AV2-M
H11AV2A-M
TRANSFER CHARACTERISTICS (T = 25°C Unless otherwise specified.)
A
DC Characteristic
Test Conditions
Symbol
Device
Min
Typ*
Max
Unit
H11AV1
H11AV1A
100
300
%
Current Transfer Ratio,
Collector to Emitter
(I = 10 mA, V = 10 V)
CTR
F
CE
H11AV2
H11AV2A
50
Collector-Emitter
Saturation Voltage
(I = 2 mA, I = 20 mA)
V
CE (SAT)
All
0.4
V
C
F
AC Characteristic
Non-Saturated
Turn-on Time
(I = 2 mA, V = 10 V, R = 100Ω)
C
CC
L
T
All
All
15
15
µs
µs
ON
(Fig. 11)
(I = 2 mA, V = 10 V, R = 100Ω)
Non Saturated
Turn-off Time
C
CC
L
T
ON
(Fig. 11)
* Typical values at T = 25°C
A
© 2005 Fairchild Semiconductor Corporation
Page 4 of 10
6/15/05
PHOTOTRANSISTOR OPTOCOUPLERS
H11AV1-M
H11AV1A-M
H11AV2-M
H11AV2A-M
TYPICAL PERFORMANCE CURVES
Fig. 1 LED Forward Voltage vs. Forward Current
Fig. 2 Normalized CTR vs. Forward Current
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.8
V
= 5.0V
= 25°C
CE
Normalized to
I = 10 mA
F
T
A
1.7
1.6
1.5
1.4
T
T
T
= -55°C
= 25°C
= 100°C
A
A
1.3
1.2
1.1
1.0
A
0
2
4
6
8
10
12
14
16
18
20
1
10
- LED FORWARD CURRENT (mA)
100
I
F
- FORWARD CURRENT (mA)
I
F
Fig. 4 CTR vs. RBE (Unsaturated)
Fig. 3 Normalized CTR vs. Ambient Temperature
1.4
1.2
1.0
0.8
0.6
0.4
0.2
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
I
F
= 20 mA
I
= 5 mA
I
F
= 10 mA
F
I
F
= 5 mA
I
= 10 mA
F
I
= 20 mA
F
V
= 5.0 V
CE
Normalized to
I
F
= 10 mA
T
A
= 25°C
10
100
- BASE RESISTANCE (kΩ)
1000
-60
-40
-20
0
20
40
60
80
100
R
BE
T
A
- AMBIENT TEMPERATURE (°C)
Fig. 6 Collector-Emitter Saturation Voltage vs Collector Current
Fig. 5 CTR vs. RBE (Saturated)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
100
V
= 0.3 V
CE
T
= 25˚C
A
10
1
I
= 20 mA
= 10 mA
F
I
F
I
= 2.5 mA
F
0.1
I
F
= 5 mA
I
F
= 20 mA
0.01
I
F
= 5 mA
I
F
= 10 mA
10
100
- BASE RESISTANCE (k Ω)
1000
0.001
0.01
0.1
1
10
R
BE
I
C
- COLLECTOR CURRENT (mA)
© 2005 Fairchild Semiconductor Corporation
Page 5 of 10
6/15/05
PHOTOTRANSISTOR OPTOCOUPLERS
H11AV1-M
H11AV1A-M
H11AV2-M
H11AV2A-M
Fig. 7 Switching Speed vs. Load Resistor
Fig. 8 Normalized t vs. R
on
BE
1000
100
10
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
I
V
T
= 10 mA
F
V
10 V
= 2 mA
= 100 Ω
CC =
= 10 V
CC
= 25°C
I
C
L
A
R
T
off
T
f
T
on
1
T
r
0.1
10
100
R
1000
10000
100000
0.1
1
10
100
- BASE RESISTANCE (k Ω)
BE
R-LOAD RESISTOR (kΩ)
Fig. 10 Dark Current vs. Ambient Temperature
10000
1000
100
10
Fig. 9 Normalized t vs. R
off
BE
V
= 10 V
= 25°C
CE
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
T
A
1
V
I
C
L
10 V
= 2 mA
= 100 Ω
CC =
0.1
R
0.01
0.001
0
20
40
60
80
100
10
100
1000
10000
100000
R
- BASE RESISTANCE (k Ω)
BE
T
A
- AMBIENT TEMPERATURE (°C)
TEST CIRCUIT
WAVE FORMS
V
CC = 10V
INPUT PULSE
IC
IF
RL
10%
90%
INPUT
OUTPUT
OUTPUT PULSE
RBE
tr
tf
toff
ton
I
I
Adjust
F
t
o
p
r
o
d
u
c
e
C
=
2
m
A
Figure 11. Switching Time Test Circuit and Waveforms
© 2005 Fairchild Semiconductor Corporation
Page 6 of 10
6/15/05
PHOTOTRANSISTOR OPTOCOUPLERS
H11AV1-M
H11AV1A-M
H11AV2-M
H11AV2A-M
Package Dimensions (Through Hole)
Package Dimensions (Surface Mount)
0.350 (8.89)
0.320 (8.13)
0.350 (8.89)
0.320 (8.13)
Pin 1 ID
Pin 1 ID
0.390 (9.90)
0.332 (8.43)
0.260 (6.60)
0.240 (6.10)
0.260 (6.60)
0.240 (6.10)
0.070 (1.77)
0.040 (1.02)
0.070 (1.77)
0.040 (1.02)
0.320 (8.13)
0.320 (8.13)
0.014 (0.36)
0.010 (0.25)
0.014 (0.36)
0.010 (0.25)
0.200 (5.08)
0.115 (2.93)
0.200 (5.08)
0.115 (2.93)
0.012 (0.30)
0.008 (0.20)
0.100 (2.54)
0.015 (0.38)
0.025 (0.63)
0.020 (0.51)
0.100 [2.54]
0.020 (0.50)
0.016 (0.41)
15°
0.035 (0.88)
0.012 (0.30)
0.100 (2.54)
0.020 (0.50)
0.016 (0.41)
0.012 (0.30)
Package Dimensions (0.4” Lead Spacing)
Recommended Pad Layout for
Surface Mount Leadform
0.350 (8.89)
0.320 (8.13)
PIN 1 ID
0.070 (1.78)
0.260 (6.60)
0.240 (6.10)
0.060 (1.52)
0.070 (1.77)
0.040 (1.02)
0.014 (0.36)
0.425 (10.79)
0.100 (2.54)
0.305 (7.75)
0.010 (0.25)
0.030 (0.76)
0.200 (5.08)
0.115 (2.93)
0.100 (2.54)
0.015 (0.38)
0.012 (0.30)
0.100 [2.54]
0.020 (0.50)
0.016 (0.41)
0.008 (0.21)
0.425 (10.80)
0.400 (10.16)
NOTE
All dimensions are in inches (millimeters)
© 2005 Fairchild Semiconductor Corporation
Page 7 of 10
6/15/05
PHOTOTRANSISTOR OPTOCOUPLERS
H11AV1-M
H11AV1A-M
H11AV2-M
H11AV2A-M
ORDERING INFORMATION
Order Entry Identifier
Order Entry Identifier
Option
Example
S
SR2
N/A
V
Surface Mount Lead Bend
Surface Mount; Tape and reel
0.4" Lead Spacing
H11AV1S-M
H11AV1SR2-M
H11AV1A-M
VDE 0884
H11AV1V-M
N/A
SV
VDE 0884, 0.4" Lead Spacing
VDE 0884, Surface Mount
H11AV1AV-M
H11AV1SV-M
H11AV1SR2V-M
SR2V
VDE 0884, Surface Mount, Tape & Reel
MARKING INFORMATION
1
2
6
H11AV1
V X YY Q
5
3
4
White Package
Definitions
1
2
Fairchild logo
Device number
VDE mark (Note: Only appears on parts ordered with VDE
option – See order entry table)
3
4
One digit year code
• One digit for white package parts, e.g., ‘3’
5
6
Two digit work week ranging from ‘01’ to ‘53’
Assembly package code
*Note – Parts built in the white package (M suffix) that do not have the ‘V’ option (see
definition 3 above) that are marked with date code ‘325’ or earlier are marked in the
portrait format.
© 2005 Fairchild Semiconductor Corporation
Page 8 of 10
6/15/05
PHOTOTRANSISTOR OPTOCOUPLERS
H11AV1-M
H11AV1A-M
H11AV2-M
H11AV2A-M
Carrier Tape Specifications
12.0 0.1
2.0 0.05
4.5 0.20
Ø1.5 MIN
1.75 0.10
0.30 0.05
4.0 0.1
11.5 1.0
24.0 0.3
9.1 0.20
21.0 0.1
Ø1.5 0.1/-0
10.1 0.20
User Direction of Feed
0.1 MAX
Reflow Profile
300
260°C
280
260
240
220
200
180
160
140
120
100
80
>245°C = 42 Sec
Time above
183°C = 90 Sec
°C
1.822°C/Sec Ramp up rate
60
40
33 Sec
20
0
0
60
120
180
270
360
Time (s)
© 2005 Fairchild Semiconductor Corporation
Page 9 of 10
6/15/05
PHOTOTRANSISTOR OPTOCOUPLERS
H11AV1-M
H11AV1A-M
H11AV2-M
H11AV2A-M
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body, or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in a significant injury of the user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
© 2005 Fairchild Semiconductor Corporation
Page 10 of 10
6/15/05
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ISOCOM
H11AV1X-SMT&R
Optocoupler - Transistor Output, 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER, SURFACE MOUNT, PLASTIC, DIP-6
ISOCOM
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