H11AA4S [FAIRCHILD]
AC INPUT/PHOTOTRANSISTOR OPTOCOUPLERS; AC输入/光电晶体管光耦合器
| 型号： | H11AA4S |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | AC INPUT/PHOTOTRANSISTOR OPTOCOUPLERS |
| 文件： | 总9页 (文件大小：533K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
October 2005
H11AA1, H11AA3, H11AA2, H11AA4
AC Input/Phototransistor Optocouplers
Features
Description
■ Bi-polar emitter input
The H11AAX series consists of two gallium-arsenide infrared
emitting diodes connected in inverse parallel driving a single
silicon phototransistor output.
■ Built-in reverse polarity input protection
■ Underwriters Laboratory (UL) recognized – File #E90700
■ VDE approved – File #E94766 (ordering option ‘300’)
Applications
■ AC line monitor
■ Unknown polarity DC sensor
■ Telephone line interface
1
2
6
5
BASE
COLL
6
6
1
3
4
EMITTER
1
6
1
Parameter
TOTAL DEVICE
Symbol
Device
Value
Units
Storage Temperature
T
All
All
All
All
-55 to +150
-55 to +100
260 for 10 sec
350
°C
°C
STG
Operating Temperature
Lead Solder Temperature
Total Device Power Dissipation
Derate Linearly From 25°C
EMITTER
T
OPR
T
°C
SOL
P
mW
mW/°C
D
4.6
Continuous Forward Current
Forward Current - Peak (1 µs pulse, 300 pps)
LED Power Dissipation
Derate Linearly From 25°C
DETECTOR
I
All
All
All
100
1.0
mA
A
F
I
F(pk)
P
200
2.6
mW
D
mW/°C
Detector Power Dissipation
Derate above 25°C
P
All
300
4.0
mW
D
mW/°C
©2005 Fairchild Semiconductor Corporation
1
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H11AA1, H11AA3, H11AA2, H11AA4 Rev. 1.0.0
Electrical Characteristics (T = 25°C Unless otherwise specified.)
A
Individual Component Characteristics
Parameter
Test Conditions Symbol Device
Min
Typ
Max
Unit
EMITTER
Input Forward Voltage
Capacitance
I = 10 mA
V
All
All
1.2
80
1.5
V
F
F
V = 0 V, f = 1.0 MHz
C
pF
F
J
DETECTOR
Breakdown Voltage
Collector to Emitter
I
I
= 1.0 mA, I = 0
BV
All
30
V
C
F
CEO
Collector to Base
Emitter to Base
= 100 µA, I = 0
BV
BV
BV
All
All
70
5
V
V
C
F
CBO
EBO
ECO
I
I
= 100 µA, I = 0
F
E
E
Emitter to Collector
= 100 µA, I = 0
All
7
V
F
Leakage Current
Collector to Emitter
V
= 10 V, I = 0
I
CEO
H11AA1,3,4
H11AA2
All
50
nA
CE
F
200
Capacitance
V
= 0, f = 1 MHz
C
10
pF
CE
CE
Collector to Emitter
Collector to Base
Emitter to Base
V
V
= 0, f = 1 MHz
= 0, f = 1 MHz
C
C
All
All
80
15
pF
pF
CE
CE
CB
EB
Transfer Characteristics (T = 25°C Unless otherwise specified.)
A
Characteristics
Test Conditions
Symbol Device Min Typ Max Units
Current Transfer Ratio,
Collector to Emitter
I = 10 mA, V = 10 V
CTR
CE
H11AA4
H11AA3
H11AA1
H11AA2
All
100
50
%
F
CE
20
10
Current Transfer Ratio, Symmetry I = 10 mA, V = 10 V (Figure.8)
.33
3.0
.40
F
CE
Saturation Voltage
Collector to Emitter
I = 10 mA, I = 0.5 mA
V
All
V
F
CE
CE(SAT)
Isolation Characteristics
Characteristic
Package Capacitance input/output
Isolation Voltage
Test Conditions
Symbol
Min
Typ
Max
Units
V
= 0, f = 1 MHz
C
0.7
pF
VAC(RMS)
Ω
I-O
I-O
ISO
ISO
f = 60 Hz, t = 1 min.
= 500 VDC
V
R
5300
1011
Isolation Resistance
V
I-O
2
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H11AA1, H11AA3, H11AA2, H11AA4 Rev. 1.0.0
Fig. 1 Input Voltage vs. Input Current
Fig. 2 Normalized CTR vs. Forward Current
100
80
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
V
T
= 5.0V
Normalized to
= 10 mA
CE
= 25°C
I
A
F
60
40
20
0
-20
-40
-60
-80
-100
-2.0
-1.5
-1.0
-0.5
0.0
0.5
1.0
1.5
2.0
0
5
I
10
- FORWARD CURRENT (mA)
15
20
F
V - INPUT VOLTAGE (V)
F
Fig. 4 CTR vs. RBE (Unsaturated)
Fig. 3 Normalized CTR vs. Ambient Temperature
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.6
1.4
1.2
1.0
0.8
0.6
0.4
I = 5 mA
F
V = 5.0 V
CE
I
I
= 20 mA
= 10 mA
F
F
I
= 10 mA
F
I
= 5 mA
F
Normalized to
= 10 mA
I
F
= 20 mA
I
F
T
A
= 25°C
10
100
- BASE RESISTANCE (k)
1000
-75
-50
-25
0
25
50
75
100
125
R
T
A
- AMBIENT TEMPERATURE (°C)
BE
Fig. 6 Collector-Emitter Saturation Voltage vs Collector Current
Fig. 5 CTR vs. RBE (Saturated)
1.0
100
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
V = 0.3 V
CE
10
1
I
I
= 20 mA
= 10 mA
F
F
I
F
= 2.5 mA
0.1
0.01
I
= 5 mA
F
I
= 20 mA
F
I
F
= 10 mA
I
F
= 5 mA
10
100
- BASE RESISTANCE (k)
1000
T
= 25˚C
A
0.001
R
BE
0.01
0.1
1
10
I
C
- COLLECTOR CURRENT (mA)
3
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H11AA1, H11AA3, H11AA2, H11AA4 Rev. 1.0.0
Fig. 7 Switching Speed vs. Load Resistor
Fig. 8 Normalized t vs. R
on
BE
1000
100
10
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
I
V
T
= 10 mA
F
V
10 V
CC =
= 2 mA
= 10 V
CC
= 25˚C
I
C
A
R
L
= 100
T
off
T
f
T
on
r
1
T
0.1
0.1
1
10
100
10
100
R
1000
10000
100000
R-LOAD RESISTOR (k
- BASE RESISTANCE (k
BE
Fig. 10 Dark Current vs. Ambient Temperature
Fig. 9 Normalized t vs. R
off
BE
10000
1000
100
10
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
V
= 10 V
CE
= 25°C
T
A
1
V
10 V
CC =
= 2 mA
I
C
R
L
= 100
0.1
0.01
0.001
10
100
1000
10000
100000
R
- BASE RESISTANCE (k)
0
20
40
60
80
100
BE
T
A
- AMBIENT TEMPERATURE (°C)
Fig. 11 Output Symmetry Characteristics
10
5
I
=
=
- 10mA
10mA
F
I
I
I
1
I
F
I
.5
NORMALIZED TO:
= 10 V
V
.1
CE
= 10 mA
I
F
.05
THE MAXIMUM PEAK
OUTPUT CURRENT
WILL BE NO MORE
THAN THREE TIMES
THE MINIMUM PEAK
OUTPUT CURRENT AT
.01
.005
I
= 10 mA
F
.01
.05 .1
.5
1
5
10
V
- COLLECTOR TO EMITTER VOLTAGE (V)
CE
4
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H11AA1, H11AA3, H11AA2, H11AA4 Rev. 1.0.0
Package Dimensions (Through Hole)
PIN 1
ID.
Package Dimensions (Surface Mount)
0.350 (8.89)
0.330 (8.38)
0.270 (6.86)
0.240 (6.10)
PIN 1
ID.
3
2
1
0.270 (6.86)
0.240 (6.10)
0.350 (8.89)
0.330 (8.38)
4
5
6
0.070 (1.78)
0.045 (1.14)
0.300 (7.62)
TYP
0.070 (1.78)
0.045 (1.14)
0.200 (5.08)
0.135 (3.43)
0.200 (5.08)
0.165 (4.18)
0.016 (0.41)
0.008 (0.20)
0.020 (0.51)
0.154 (3.90)
0.100 (2.54)
MIN
0.020 (0.51)
MIN
0.016 (0.40) MIN
0.016 (0.40)
0.008 (0.20)
0.022 (0.56)
0.016 (0.41)
0.100 (2.54)
TYP
0.315 (8.00)
MIN
0.300 (7.62)
TYP
0.022 (0.56)
0.016 (0.41)
0° to 15°
0.405 (10.30)
MAX
0.100 (2.54)
TYP
Lead Coplanarity : 0.004 (0.10) MAX
Package Dimensions (0.4"Lead Spacing)
Recommended Pad Layout for
Surface Mount Leadform
0.070 (1.78)
0.270 (6.86)
0.240 (6.10)
0.060 (1.52)
0.350 (8.89)
0.330 (8.38)
0.070 (1.78)
0.045 (1.14)
0.415 (10.54)
0.100 (2.54)
0.295 (7.49)
0.030 (0.76)
0.200 (5.08)
0.135 (3.43)
0.154 (3.90)
0.100 (2.54)
0.016 (0.40)
0.008 (0.20)
0.004 (0.10)
MIN
0° to 15°
0.022 (0.56)
0.016 (0.41)
0.400 (10.16)
TYP
0.100 (2.54) TYP
Note
All dimensions are in inches (millimeters)
5
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H11AA1, H11AA3, H11AA2, H11AA4 Rev. 1.0.0
Ordering Information
Option
Order Entry Identifier
Description
S
.S
.SD
Surface Mount Lead Bend
SD
W
Surface Mount; Tape and Reel
0.4” Lead Spacing
.W
300
300W
3S
.300
.300W
.3S
VDE 0884
VDE 0884, 0.4” Lead Spacing
VDE 0884, Surface Mount
VDE 0884, Surface Mount, Tape and Reel
3SD
.3SD
Carrier Tape Specifications (“D”Taping Orientation)
12.0 0.1
4.85 0.20
4.0 0.1
Ø1.55 0.05
1.75 0.10
0.30 0.05
4.0 0.1
7.5 0.1
16.0 0.3
9.55 0.20
13.2 0.2
Ø1.6 0.1
10.30 0.20
0.1 MAX
User Direction of Feed
Note
All dimensions are in millimeters
6
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H11AA1, H11AA3, H11AA2, H11AA4 Rev. 1.0.0
Marking Information
1
2
6
H11AA1
V XX YY K
5
3
4
Definitions
1
2
3
Fairchild logo
Device number
VDE mark (Note: Only appears on parts ordered with VDE
option – See order entry table)
4
5
6
Two digit year code, e.g., ‘03’
Two digit work week ranging from ‘01’ to ‘53’
Assembly package code
Reflow Profile (Black Package, No Suffix)
300
215°C, 10–30 s
250
225 C peak
200
150
Time above 183°C, 60–150 sec
Ramp up = 3C/sec
100
50
0
• Peak reflow temperature: 225°C (package surface temperature)
• Time of temperature higher than 183°C for 60–150 seconds
• One time soldering reflow is recommended
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
Time (Minute)
7
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H11AA1, H11AA3, H11AA2, H11AA4 Rev. 1.0.0
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
PowerSaver™
SuperSOT™-8
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CoolFET™
CROSSVOLT™
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FACT™
PowerTrench
FASTr™
FPS™
FRFET™
GlobalOptoisolator™
GTO™
QFET
QS™
TINYOPTO™
TruTranslation™
UHC™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
µSerDes™
SILENT SWITCHER
SMART START™
SPM™
UltraFET
HiSeC™
I2C™
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Wire™
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ImpliedDisconnect™
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PACMAN™
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Across the board. Around the world.™
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVESTHE RIGHTTO MAKE CHANGES WITHOUTFURTHER NOTICETOANY
PRODUCTS HEREINTO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOTASSUMEANYLIABILITY
ARISING OUTOFTHEAPPLICATION OR USE OFANYPRODUCTOR CIRCUITDESCRIBED HEREIN; NEITHER DOES IT
CONVEYANYLICENSE UNDER ITS PATENTRIGHTS, NORTHE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I16
8
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H11AA1, H11AA3, H11AA2, H11AA4 Rev. 1.0.0
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