GBPC1501M [FAIRCHILD]
Bridge Rectifier Diode, 1 Phase, 15A, 100V V(RRM), Silicon, GBPC-M, 4 PIN;
| 型号： | GBPC1501M |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Bridge Rectifier Diode, 1 Phase, 15A, 100V V(RRM), Silicon, GBPC-M, 4 PIN PC |
| 文件： | 总4页 (文件大小：171K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
May 2010
GBPC 12, 15, 25, 35 SERIES
Bridge Rectifiers (Glass Passivated)
Features
• Integrally molded heatsink provided very low thermal resistance for maximum heat dissipation.
• Surge Overload Ratings from 300 amperes to 400 amperes.
• Isolated voltage from case to lead over 2500 volts.
• UL certified, UL #E326243
• Terminals Finish Material - Silver (solderable per MIL-STD-202, Method 208 for the wire type)
Suffix “W”
Wire Lead Structure
Suffix “M”
Terminal Location Face to Face
~
–
–
~
+
~
~
+
GBPC
GBPC-W
Absolute Maximum Ratings * TA = 25°C unless otherwise noted
Value
04
Symbol
Parameter
Units
005 01
02
06
08
10
VRRM
VRMS
VR
Maximum Repetitive Reverse Voltage
Maximum RMS Bridge Input Voltage
DC Reverse Voltage (Rated VR)
Average Rectified Forward Current
50
35
50
100 200 400 600 800 1000
70 140 280 420 560 700
100 200 400 600 800 1000
V
V
V
IF(AV)
@ TC = 55°C
GBPC12
12
15
25
35
A
A
A
A
GBPC15
GBPC25
GBPC35
IFSM
Non-Repetitive Peak Forward Surge Current
GBPC12, 25, 25
8.3ms Single Half-Sine-Wave
GBPC35
300
A
400
A
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature
-55 to +150
-55 to +150
°C
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
© 2010 Fairchild Semiconductor Corporation
GBPC 12, 15, 25, 35 SERIES Rev. C4
www.fairchildsemi.com
1
Thermal Characteristics
Symbol
PD
RθJC
Parameter
Value
83.3
1.5
Units
W
°C/W
Power Dissipation
Thermal Resistance, Junction to Case *
* With Heatsink
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VF
Forward Voltage Drop, per bridge
@6.0A
@7.5A
@12.5A
@17.5A
GBPC12
GBPC15
GBPC25
GBPC35
1.1 (Max.)
V
IR
I2t
CT
Reverse Current, per element
@ Rated VR
TA = 25°C
5.0 (Max.)
500 (Max.)
µA
µA
TA = 125°C
Rating for Fusing
t < 8.35ms
GBPC12, 15, 25
GBPC35
375
660
A2Sec
A2Sec
Total Capacitance, per leg
VR = 4.0V
f = 1.0MHz
GBPC12, 15, 25
GBPC35
180
200
pF
pF
© 2010 Fairchild Semiconductor Corporation
GBPC 12, 15, 25, 35 SERIES Rev. C4
www.fairchildsemi.com
2
Typical Performance Characteristics
Figure 1. Forward Current Derating Curve
Figure 2. Non-Repetitive Surge Current
40
400
GBPC35
SINGLE PHASE
HALF WAVE
60Hz
RESISTIVE OR
200
30
INDUCTIVE LOAD
LENGTHS
GBPC25
GBPC35
100
20
10
0
GBPC12-GBPC25
GBPC15
GBPC12
50
20
0
25
50
75
100
125
150
175
1
2
5
10
20
50
100
Case
iTemperature [ºC]
Number of Cycles at 60Hz
Figure 3. Forward Voltage Characteristics
Figure 4. Reverse Current vs Reverse Voltage
200
100
GBPC35
100
10
1
T
º
= 125 C
A
GBPC25
GBPC12-GBPC15
10
1
T
= 25ºC
º
T
= 25 C
A
A
Pulse Width = 300µs
2% Duty Cycle
0.1
0.1
0
20
40
60
80
100
120
140
0.6
0.8
1
1.2
1.4
1.6
1.8
2
]
Percent of Rated Peak Reverse Voltage (per leg) [%]
Forward Voltage, VF [V]
© 2010 Fairchild Semiconductor Corporation
GBPC 12, 15, 25, 35 SERIES Rev. C4
www.fairchildsemi.com
3
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status
Definition
Datasheet contains the design specifications for product development. Specifications may change in
any manner without notice.
Advance Information
Preliminary
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
First Production
Full Production
Not In Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes
at any time without notice to improve the design.
No Identification Needed
Obsolete
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I49
© Fairchild Semiconductor Corporation
www.fairchildsemi.com
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