FSF150R1 [FAIRCHILD]
Power Field-Effect Transistor, 25A I(D), 100V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA,;
| 型号： | FSF150R1 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Power Field-Effect Transistor, 25A I(D), 100V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, 局域网 开关 脉冲 晶体管 |
| 文件： | 总10页 (文件大小：84K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FSF150D, FSF150R
25A, 100V, 0.070 Ohm, Rad Hard,
SEGR Resistant, N-Channel Power MOSFETs
June 1998
Features
Description
• 25A, 100V, r
• Total Dose
= 0.070Ω
The Discrete Products Operation of Intersil Corporation has
developed a series of Radiation Hardened MOSFETs specif-
ically designed for commercial and military space applica-
DS(ON)
- Meets Pre-RAD Specifications to 100K RAD (Si)
tions. Enhanced Power MOSFET immunity to Single Event
Effects (SEE), Single Event Gate Rupture (SEGR) in particu-
lar, is combined with 100K RADS of total dose hardness to
provide devices which are ideally suited to harsh space envi-
ronments. The dose rate and neutron tolerance necessary
for military applications have not been sacrificed.
• Single Event
- Safe Operating Area Curve for Single Event Effects
2
- SEE Immunity for LET of 36MeV/mg/cm with
V
up to 80% of Rated Breakdown and
of 10V Off-Bias
DS
V
GS
The Intersil portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BV
DSS
- Typically Survives 2E12 if Current Limited to I
DM
This MOSFET is an enhancement-mode silicon-gate power
field-effect transistor of the vertical DMOS (VDMOS) struc-
ture. It is specially designed and processed to be radiation
tolerant.The MOSFET is well suited for applications exposed
to radiation environments such as switching regulation,
switching converters, motor drives, relay drivers and drivers
for high-power bipolar switching transistors requiring high
speed and low gate drive power. This type can be operated
directly from integrated circuits.
• Photo Current
- 7.0nA Per-RAD(Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications
for 3E13 Neutrons/cm
2
2
- Usable to 3E14 Neutrons/cm
Reliability screening is available as either commercial, TXV
equivalent of MIL-S-19500, or Space equivalent of
MIL-S-19500. Contact Intersil for any desired deviations from
the data sheet.
Ordering Information
RAD LEVEL
SCREENING LEVEL PART NUMBER/BRAND
10K
Commercial
TXV
FSF150D1
FSF150D3
FSF150R1
FSF150R3
FSF150R4
10K
Symbol
D
100K
Commercial
TXV
100K
100K
Space
G
Formerly available as type TA17656.
S
Package
TO-254AA
G
S
D
CAUTION: Beryllia Warning per MIL-S-19500
refer to package specifications.
©2001 Fairchild Semiconductor Corporation
FSF150D, FSF150R Rev. A
FSF150D, FSF150R
o
Absolute Maximum Ratings T = 25 C, Unless Otherwise Specified
C
FSF150D, FSF150R
UNITS
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
100
100
V
V
DS
Drain to Gate Voltage (R
= 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
GS
Continuous Drain Current
o
T
T
= 25 C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
25 (Note 1)
A
A
A
V
C
C
D
D
o
= 100 C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
20
75
20
DM
GS
Maximum Power Dissipation
o
T
T
= 25 C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
125
50
1.00
W
W
W/ C
C
C
T
T
o
= 100 C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
o
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulsed Avalanche Current, L = 100µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . I
75
A
A
A
AS
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
25 (Note 1)
75
-55 to 150
300
S
SM
Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
o
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T , T
C
o
J
STG
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
(Distance >0.063in (1.6mm) from Case, 10s Max)
C
L
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Current is limited by the package capability.
o
Electrical Specifications T = 25 C, Unless Otherwise Specified
C
PARAMETER
Drain to Source Breakdown Voltage
Gate Threshold Voltage
SYMBOL
BV
TEST CONDITIONS
= 1mA, V = 0V
MIN
TYP
MAX
-
UNITS
V
I
100
-
-
-
-
-
-
-
DSS
D
GS
o
V
V
I
= V
= 1mA
,
T
T
T
T
T
T
T
= -55 C
-
1.5
0.5
-
5.0
4.0
-
V
GS(TH)
GS
DS
C
C
C
C
C
C
C
o
D
= 25 C
V
o
= 125 C
V
o
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I
I
V
V
= 80V,
DS
= 25 C
25
µA
µA
nA
nA
V
DSS
= 0V
o
GS
= 125 C
-
250
100
200
1.84
0.070
0.105
140
310
170
70
o
V
=
20V
= 25 C
-
GSS
GS
o
= 125 C
Drain to Source On-State Voltage
Drain to Source On Resistance
V
V
= 12V, I = 25A
D
DS(ON)
GS
o
r
I
V
= 20A,
T
T
= 25 C
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.045
Ω
DS(ON)12
D
C
C
= 12V
o
GS
= 125 C
-
Ω
Turn-On Delay Time
Rise Time
t
V
R
R
= 50V, I = 25A,
-
ns
ns
ns
ns
nC
nC
nC
nC
nC
V
d(ON)
DD
D
= 2.0Ω, V = 12V,
L
GS
t
-
r
= 2.35Ω
GS
Turn-Off Delay Time
Fall Time
t
-
d(OFF)
t
-
-
f
Total Gate Charge
Q
V
= 0V to 20V
= 0V to 12V
= 0V to 2V
V
= 50V,
240
160
8.1
31
g(TOT)
GS
DD
= 25A
I
D
Gate Charge at 12V
Threshold Gate Charge
Gate Charge Source
Gate Charge Drain
Q
V
130
-
g(12)
g(TH)
GS
Q
V
GS
Q
23
67
7
gs
gd
Q
88
Plateau Voltage
V
I
= 25A, V
= 15V
-
(PLATEAU)
D
DS
= 25V, V = 0V,
GS
Input Capacitance
C
V
3250
1060
370
-
-
pF
pF
pF
ISS
DS
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
C
C
-
OSS
-
RSS
o
R
R
1.00
48
C/W
JC
θ
o
-
C/W
JA
θ
©2001 Fairchild Semiconductor Corporation
FSF150D, FSF150R Rev. A
FSF150D, FSF150R
Source to Drain Diode Specifications
PARAMETER
Forward Voltage
Reverse Recovery Time
SYMBOL
TEST CONDITIONS
MIN
0.6
-
TYP
MAX
1.8
UNITS
V
V
I
I
= 25A
-
-
SD
SD
SD
t
= 25A, dI /dt = 100A/µs
400
ns
rr
SD
o
Electrical Specifications up to 100K RAD T = 25 C, Unless Otherwise Specified
C
PARAMETER
Drain to Source Breakdown Volts
Gate to Source Threshold Volts
Gate to Body Leakage
SYMBOL
BV
TEST CONDITIONS
= 0, I = 1mA
MIN
MAX
-
UNITS
(Note 3)
V
100
V
V
DSS
GS(TH)
GS
D
(Note 3)
V
V
= V , I = 1mA
DS
1.5
4.0
GS
D
(Notes 2, 3)
(Note 3)
I
V
=
20V, V
= 0V
-
-
-
-
100
25
nA
µA
V
GSS
GS
DS
Zero Gate Leakage
I
V
= 0, V
= 80V
DSS
GS
DS
= 12V, I = 25A
Drain to Source On-State Volts
Drain to Source On Resistance
(Notes 1, 3)
(Notes 1, 3)
V
V
1.84
0.070
DS(ON)
GS
D
r
V
= 12V, I = 20A
Ω
DS(ON)12
GS
D
NOTES:
2. Pulse test, 300µs Max.
3. Absolute value.
4. Insitu Gamma bias must be sampled for both V
= 12V, V
= 0V and V
= 0V, V
= 80% BV
.
DSS
GS
DS
GS
DS
Single Event Effects (SEB, SEGR) (Note 4)
ENVIRONMENT (NOTE 5)
(NOTE 6)
APPLIED
BIAS
MAXIMUM
ION
SPECIES
TYPICAL LET
(MeV/mg/cm)
TYPICAL
RANGE (µ)
V
V
BIAS
GS
(V)
DS
(V)
TEST
SYMBOL
Single Event Effects Safe Operating
Area
SEESOA
Ni
Br
Br
Br
26
37
37
37
43
36
36
36
-20
-10
-15
-20
100
100
80
50
NOTES:
5. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.
2
o
6. Fluence = 1E5 ions/cm (typical), T = 25 C.
7. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
©2001 Fairchild Semiconductor Corporation
FSF150D, FSF150R Rev. A
FSF150D, FSF150R
Typical Performance Curves Unless Otherwise Specified
2
LET = 26MeV/mg/cm , RANGE = 43µ
2
LET = 37MeV/mg/cm , RANGE = 36µ
1E-3
1E-4
120
100
80
60
40
20
0
2
FLUENCE = 1E5 IONS/cm (TYPICAL)
ILM = 10A
30A
1E-5
1E-6
1E-7
100A
300A
o
TEMP = 25 C
10
30
100
300
1000
0
-5
-10
-15
(V)
-20
-25
V
GS
DRAIN SUPPLY (V)
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
40
FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT
GAMMA DOT CURRENT TO I
AS
100
o
= 25 C
T
C
100µs
30
20
1ms
10
1
10ms
100ms
10
0
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
0.1
-50
0
T
50
100
o
150
1
10
, DRAIN TO SOURCE VOLTAGE (V)
100
, CASE TEMPERATURE ( C)
C
V
DS
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
©2001 Fairchild Semiconductor Corporation
FSF150D, FSF150R Rev. A
FSF150D, FSF150R
Typical Performance Curves Unless Otherwise Specified (Continued)
2.5
2.0
PULSE DURATION = 250ms, V
GS
= 12V, I = 20A
D
Q
Q
12V
G
1.5
1.0
0.5
0.0
Q
GD
GS
V
G
CHARGE
-80
-40
0
40
80
120
o
160
T , JUNCTION TEMPERATURE ( C)
J
FIGURE 5. BASIC GATE CHARGE WAVEFORM
10
FIGURE 6. NORMALIZED r
vs JUNCTIONTEMPERATURE
DS(ON)
1
0.5
0.2
0.1
0.05
0.1
P
DM
0.02
0.01
t
t
SINGLE PULSE
1
2
0.01
NOTES:
DUTY FACTOR: D = t /t
1
2
+ T
PEAK T = P
x Z
J
DM
JC
θ
C
0.001
-5
10
-4
-3
10
-2
10
-1
10
0
1
10
10
10
t, RECTANGULAR PULSE DURATION (s)
FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE
300
100
o
STARTING T = 25 C
J
o
STARTING T = 150 C
J
10
IF R = 0
t
= (L) (I ) / (1.3 RATED BV
AS DSS
- V
DD
)
AV
IF R ≠ 0
AV
t
= (L/R) ln [(I *R) / (1.3 RATED BV
AS
- V ) + 1]
DD
DSS
1
0.1
1
10
0.01
t
,TIME IN AVALANCHE (ms)
AV
FIGURE 8. UNCLAMPED INDUCTIVE SWITCHING
©2001 Fairchild Semiconductor Corporation
FSF150D, FSF150R Rev. A
FSF150D, FSF150R
Test Circuits and Waveforms
ELECTRONIC SWITCH OPENS
WHEN I IS REACHED
AS
V
DS
L
BV
DSS
+
CURRENT
TRANSFORMER
I
AS
t
P
-
V
DS
I
AS
V
VARY t TO OBTAIN
DD
P
+
50Ω
REQUIRED PEAK I
AS
V
DD
V
≤ 20V
GS
-
50V-150V
DUT
50Ω
t
P
0V
t
AV
FIGURE 9. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 10. UNCLAMPED ENERGY WAVEFORMS
t
ON
t
OFF
t
d(OFF)
V
DD
t
d(ON)
t
t
f
r
R
L
V
DS
90%
90%
V
DS
V
= 12V
GS
10%
10%
DUT
0V
90%
50%
R
GS
50%
V
GS
10%
PULSE WIDTH
FIGURE 11. RESISTIVE SWITCHING TEST CIRCUIT
FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
©2001 Fairchild Semiconductor Corporation
FSF150D, FSF150R Rev. A
FSF150D, FSF150R
Screening Information
Screening is performed in accordance with the latest revision in effect of MIL-S-19500, (Screening Information Table).
o
Delta Tests and Limits (JANTXV Equivalent, JANS Equivalent) T = 25 C, Unless Otherwise Specified
C
PARAMETER
Gate to Source Leakage Current
Zero Gate Voltage Drain Current
Drain to Source On Resistance
Gate Threshold Voltage
SYMBOL
TEST CONDITIONS
MAX
UNITS
nA
I
V
=
20V
20 (Note 7)
25 (Note 7)
20% (Note 8)
20% (Note 8)
GSS
DSS
GS
I
V
= 80% Rated Value
o
µA
DS
r
T
= 25 C at Rated I
D
Ω
DS(ON)
C
V
I
= 1.0mA
D
V
GS(TH)
NOTES:
8. Or 100% of Initial Reading (whichever is greater).
9. Of Initial Reading.
Screening Information
TEST
JANTXV EQUIVALENT
= 30V, t = 250µs
JANS EQUIVALENT
= 30V, t = 250µs
Gate Stress
V
V
GS
Optional
MIL-S-19500 Group A,
GS
Required
MIL-S-19500 Group A,
Pind
Pre Burn-In Tests (Note 9)
o
o
Subgroup 2 (All Static Tests at 25 C)
Subgroup 2 (All Static Tests at 25 C)
Steady State Gate
Bias (Gate Stress)
MIL-STD-750, Method 1042, Condition B
MIL-STD-750, Method 1042, Condition B
V
= 80% of Rated Value,
V
= 80% of Rated Value,
GS
GS
o
o
T
= 150 C, Time = 48 hours
T
= 150 C, Time = 48 hours
A
A
Interim Electrical Tests (Note 9)
All Delta Parameters Listed in the Delta Tests All Delta Parameters Listed in the Delta Tests
and Limits Table
and Limits Table
Steady State Reverse
Bias (Drain Stress)
MIL-STD-750, Method 1042, Condition A
MIL-STD-750, Method 1042, Condition A
V
= 80% of Rated Value,
V
= 80% of Rated Value,
DS
= 150 C, Time = 160 hours
DS
T = 150 C, Time = 240 hours
A
o
o
T
A
PDA
10%
5%
Final Electrical Tests (Note 9)
MIL-S-19500, Group A, Subgroup 2
MIL-S-19500, Group A,
Subgroups 2 and 3
NOTE:
10. Test limits are identical pre and post burn-in.
Additional Screening Tests
PARAMETER
Safe Operating Area
SYMBOL
SOA
TEST CONDITIONS
= 80V, t = 10ms
MAX
4.50
75
UNITS
A
V
DS
Unclamped Inductive Switching
Thermal Response
I
V
= 15V, L = 0.1mH
A
AS
GS(PEAK)
∆V
∆V
t
t
= 100ms; V = 25V; I = 4A
136
187
mV
mV
SD
SD
H
H
H
H
Thermal Impedance
= 500ms; V = 25V; I = 4A
H H
©2001 Fairchild Semiconductor Corporation
FSF150D, FSF150R Rev. A
FSF150D, FSF150R
Rad Hard Data Packages - Intersil Power Transistors
TXV Equivalent
E. Preconditioning Attributes Data Sheet
Hi-Rel Lot Traveler
1. Rad Hard TXV Equivalent - Standard Data Package
A. Certificate of Compliance
HTRB - Hi Temp Gate Stress Post Reverse
Bias Data and Delta Data
HTRB - Hi Temp Drain Stress Post Reverse
Bias Delta Data
B. Assembly Flow Chart
C. Preconditioning - Attributes Data Sheet
F. Group A
G. Group B
H. Group C
I. Group D
- Attributes Data Sheet
- Attributes Data Sheet
- Attributes Data Sheet
- Attributes Data Sheet
D. Group A
E. Group B
F. Group C
G. Group D
- Attributes Data Sheet
- Attributes Data Sheet
- Attributes Data Sheet
- Attributes Data Sheet
2. Rad Hard Max. “S” Equivalent - Optional Data Package
A. Certificate of Compliance
2. Rad Hard TXV Equivalent - Optional Data Package
A. Certificate of Compliance
B. Serialization Records
B. Assembly Flow Chart
C. Assembly Flow Chart
C. Preconditioning - Attributes Data Sheet
- Precondition Lot Traveler
- Pre and Post Burn-In Read and Record
Data
D. SEM Photos and Report
E. Preconditioning - Attributes Data Sheet
- Hi-Rel Lot Traveler
D. Group A
- Attributes Data Sheet
- Group A Lot Traveler
- HTRB - Hi Temp Gate Stress Post
Reverse Bias Data and Delta Data
- HTRB - Hi Temp Drain Stress Post
Reverse Bias Delta Data
E. Group B
- Attributes Data Sheet
- Group B Lot Traveler
- X-Ray and X-Ray Report
- Pre and Post Read and Record Data for
Intermittent Operating Life (Subgroup B3)
- Bond Strength Data (Subgroup B3)
- Pre and Post High Temperature Operating
Life Read and Record Data (Subgroup B6)
F. Group A
G. Group B
H. Group C
I. Group D
- Attributes Data Sheet
- Hi-Rel Lot Traveler
- Subgroups A2, A3, A4, A5 and A7 Data
- Attributes Data Sheet
- Hi-Rel Lot Traveler
- Subgroups B1, B3, B4, B5 and B6 Data
F. Group C
- Attributes Data Sheet
- Group C Lot Traveler
- Pre and Post Read and Record Data for
Intermittent Operating Life (Subgroup C6)
- Bond Strength Data (Subgroup C6)
- Attributes Data Sheet
- Hi-Rel Lot Traveler
- Subgroups C1, C2, C3 and C6 Data
G. Group D
- Attributes Data Sheet
- Attributes Data Sheet
- Hi-Rel Lot Traveler
- Group D Lot Traveler
- Pre and Post RAD Read and Record Data
- Pre and Post Radiation Data
Class S - Equivalents
1. Rad Hard “S” Equivalent - Standard Data Package
A. Certificate of Compliance
B. Serialization Records
C. Assembly Flow Chart
D. SEM Photos and Report
©2001 Fairchild Semiconductor Corporation
FSF150D, FSF150R Rev. A
FSF150D, FSF150R
TO-254AA
3 LEAD JEDEC TO-254AA HERMETIC METAL PACKAGE
A
INCHES
MIN
MILLIMETERS
ØP
E
A
SYMBOL
MAX
0.260
0.050
0.045
0.800
0.545
MIN
6.33
MAX
6.60
NOTES
1
A
0.249
0.040
0.035
0.790
0.535
-
Q
A
1.02
1.27
-
1
H
1
Øb
D
0.89
1.14
2, 3
20.07
13.59
20.32
13.84
-
-
E
D
e
0.150 TYP
0.300 BSC
3.81 TYP
7.62 BSC
4
4
-
e
1
H
0.245
0.265
0.160
0.560
0.149
0.130
6.23
6.73
4.06
1
1
J
0.140
0.520
0.139
0.110
3.56
13.21
3.54
4
-
L
14.22
3.78
0.065 R MAX.
TYP.
ØP
Q
-
L
Øb
2.80
3.30
-
NOTES:
1. These dimensions are within allowable dimensions of Rev. A of
JEDEC outline TO-254AA dated 11-86.
1
2
3
J
e
1
2. Add typically 0.002 inches (0.05mm) for solder coating.
3. Lead dimension (without solder).
e
1
4. Position of lead to be measured 0.250 inches (6.35mm) from bot-
tom of dimension D.
5. Die to base BeO isolated, terminals to case ceramic isolated.
6. Controlling dimension: Inch.
7. Revision 1 dated 1-93.
WARNING!
BERYLLIA WARNING PER MIL-S-19500
Packages containing beryllium oxide (BeO) shall not be ground, machined, sandblasted, or subject to any mechanical
operation which will produce dust containing any beryllium compound. Packages containing any beryllium compound
shall not be subjected to any chemical process (etching, etc.) which will produce fumes containing beryllium or its’
compounds.
©2001 Fairchild Semiconductor Corporation
FSF150D, FSF150R Rev. A
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
PACMAN™
POP™
PowerTrench
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
SMART START™
Star* Power™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
FAST
FASTr™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
UltraFET™
VCX™
EcoSPARK™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TOANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOTASSUMEANY LIABILITYARISING OUT OF THEAPPLICATION OR USE OFANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H
相关型号：
FSF150R4
25A, 100V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA, HERMETIC SEALED, METAL, TO-254AA, 3 PIN
RENESAS
FSF150R4
Power Field-Effect Transistor, 25A I(D), 100V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA,
FAIRCHILD
FSF1510R
Power Field-Effect Transistor, 15A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254, 3 PIN
MICROSEMI
FSF15F60
Rectifier Diode, 1 Phase, 1 Element, 15A, 600V V(RRM), Silicon, TO-220AC, TO-220, 3/2 PIN
NIEC
FSF1820
Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254, 3 PIN
MICROSEMI
FSF1820E3
Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254, 3 PIN
MICROSEMI
FSF2210E3
Power Field-Effect Transistor, 22A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254, 3 PIN
MICROSEMI
©2020 ICPDF网 联系我们和版权申明