FQU2N100_技术文档

February 2002

FQD2N100/FQU2N100

1000V N-Channel MOSFET

General Description

Features

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for electronic lamp starter and ballast.

•

1.6A, 1000V, R

= 9Ω @V = 10 V

DS(on) GS

Low gate charge ( typical 12 nC)

Low Crss ( typical 5 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

D

!

D

●

◀

▲

●

G!

I-PAK

FQU Series

D-PAK

FQD Series

G

S

G D S

!

S

Absolute Maximum Ratings

T = 25°C unless otherwise noted

C

Symbol

Parameter

FQD2N100/FQU2N100

Units

V

I

Drain-Source Voltage

1000

1.6

DSS

- Continuous (T = 25°C)

Drain Current

A

D

C

- Continuous (T = 100°C)

1.0

A

C

I

(Note 1)

Drain Current

- Pulsed

6.4

A

DM

V

E

I

Gate-Source Voltage

± 30

160

V

GSS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

mJ

A

AS

1.6

AR

E

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

5.0

mJ

V/ns

W

AR

dv/dt

5.5

Power Dissipation (T = 25°C) *

2.5

P

A

D

Power Dissipation (T = 25°C)

50

W

C

- Derate above 25°C

Operating and Storage Temperature Range

0.4

W/°C

°C

T , T

-55 to +150

J

STG

Maximum lead temperature for soldering purposes,

T

300

°C

L

1/8" from case for 5 seconds

Thermal Characteristics

Symbol

Parameter

Typ

--

Max

2.5

50

Units

°C/W

R

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient *

Thermal Resistance, Junction-to-Ambient

θJC

θJA

--

110

* When mounted on the minimum pad size recommended (PCB Mount)

Rev. A, February 2002

Electrical Characteristics

T = 25°C unless otherwise noted

C

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics

BV

V

= 0 V, I = 250 µA

GS D

Drain-Source Breakdown Voltage

1000

--

V

DSS

∆BV

Breakdown Voltage Temperature

Coefficient

DSS

I

= 250 µA, Referenced to 25°C

0.976

V/°C

D

/

∆T

J

I

V

= 1000 V, V = 0 V

--

10

µA

nA

DSS

DS

GS

Zero Gate Voltage Drain Current

= 800 V, T = 125°C

100

-100

DS

GS

C

I

= 30 V, V = 0 V

Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

GSSF

DS

I

= -30 V, V = 0 V

GSSR

DS

On Characteristics

V

= V , I = 250 µA

Gate Threshold Voltage

3.0

--

5.0

9

V

Ω

S

GS(th)

DS

GS

DS

GS

D

R

Static Drain-Source

On-Resistance

DS(on)

= 10 V, I = 0.8 A

7.1

1.9

D

g

= 50 V, I = 0.8 A

(Note 4)

Forward Transconductance

--

FS

D

Dynamic Characteristics

C

Input Capacitance

--

400

40

5

520

52

pF

iss

V

= 25 V, V = 0 V,

GS

DS

Output Capacitance

oss

rss

f = 1.0 MHz

Reverse Transfer Capacitance

6.5

Switching Characteristics

t

V

= 500 V, I = 2.0 A,

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

--

13

30

25

35

12

2.5

6.5

35

70

60

80

15.5

--

ns

d(on)

DD D

R

= 25 Ω

G

r

ns

d(off)

f

(Note 4, 5)

ns

Q

nC

g

V

= 800 V, I = 2.0 A,

DS

D

gs

gd

= 10 V

GS

--

Drain-Source Diode Characteristics and Maximum Ratings

I

Maximum Continuous Drain-Source Diode Forward Current

--

1.5

6.0

1.4

--

A

S

I

Maximum Pulsed Drain-Source Diode Forward Current

SM

V

t

V

= 0 V, I = 1.6 A

Drain-Source Diode Forward Voltage

Reverse Recovery Time

--

V

SD

GS

S

= 0 V, I = 2.0 A,

520

2.3

ns

µC

rr

GS

S

(Note 4)

dI / dt = 100 A/µs

Q

Reverse Recovery Charge

--

F

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 120mH, I = 1.6A, V = 50V, R = 25 Ω, Starting T = 25°C

AS

DD

G

J

3. I ≤ 2.0A, di/dt ≤ 300A/µs, V

≤ BV Starting T = 25°C

SD

DD

DSS, J

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

Rev. A, February 2002

Typical Characteristics

V_GS

Top :

15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

10⁰

Bottom: 5.5 V

150℃

25℃

10⁰

-1

10

-55℃

※

Notes :

1. V_DS= 50V

※

Notes :

1. 250µs Pulse Test

2. 250µs Pulse Test

℃

2. T_C= 25

-1

10

-2

10

-1

10⁰

10¹

2

4

6

8

10

V_GS, Gate-Source Voltage [V]

V_DS, Drain-Source Voltage [V]

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

20

15

10

5

V_GS= 10V

10⁰

V_GS= 20V

150℃

25℃

※

Notes :

1. V_GS= 0V

2. 250µs Pulse Test

※

℃

Note : T = 25

J

0

-1

10

0

1

2

3

4

0.2

0.4

0.6

0.8

1.0

1.2

1.4

I_D, Drain Current [A]

V

_SD, Source-Drain Voltage [V]

Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current and

Temperature

700

600

500

400

300

200

100

0

12

10

8

C

_iss= C_gs+ C_gd(C_ds= shorted)

C_oss= C_ds+ C

gd

V_DS= 200V

C_rss= C

gd

V_DS= 500V

C

iss

V_DS= 1000V

C

oss

6

※

Notes :

4

1. V_GS= 0 V

2. f = 1 MHz

C

rss

2

※

Note : I_D= 1.6 A

12

0

2

4

6

8

10

14

-1

1

10

10⁰

Q_G, Total Gate Charge [nC]

V_DS, Drain-Source Voltage [V]

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

Rev. A, February 2002

Typical Characteristics (Continued)

3.0

2.5

2.0

1.5

1.0

0.5

0.0

1.2

1.1

1.0

0.9

0.8

※

Notes:

1. V = 0 V

2. I_D^G=^S250µA

※

Notes :

1. V_GS= 10 V

2. I_D= 0.8 A

-100

-50

0

50

100

150

200

-100

-50

0

50

100

150

200

T_J, Junction Temperature [^oC]

T, Junction Temperature [^oC]

J

Figure 7. Breakdown Voltage Variation

vs. Temperature

Figure 8. On-Resistance Variation

vs. Temperature

1.8

Operation in This Area

is Limited by R _DS(on)

10¹

10⁰

1.5

1.2

0.9

0.6

0.3

0.0

10 µs

100 µs

1 ms

10 ms

DC

-1

10

※

Notes :

1. T_C= 25 ^o

2. T_J= 150 ^o

3. Single Pulse

C

-2

10

10⁰

10¹

10²

10³

25

50

75

100

125

150

℃

T_C, Case Temperature [

]

V_DS, Drain-Source Voltage [V]

Figure 9. Maximum Safe Operating Area

Figure 10. Maximum Drain Current

vs. Case Temperature

D = 0 .5

1 0 ⁰

0 .2

※

N o te s

1 . Z _θ_{J C}(t)

2 . D u ty F a c to r, D = t₁/t₂

:

℃

/W M a x.

=

2 .5

0 .1

0 .0 5

3 . T _{J M}

- T _C= P _{D M}* Z _θ_{J C}(t)

1 0 ^-1

0 .0 2

0 .0 1

P_DM

t₁

s in g le p u ls e

t₂

1 0 ^-2

1 0 ^-5

1 0 ^-4

1 0 ^-3

1 0 ^-2

1 0 ^-1

1 0 ⁰

1 0 ¹

t₁, S q u a re W a v e P u ls e D u ra tio n [s e c ]

Figure 11. Transient Thermal Response Curve

Rev. A, February 2002

Gate Charge Test Circuit & Waveform

V_GS

Same Type

50KΩ

as DUT

Q_g

12V

200nF

10V

300nF

V_DS

V_GS

Q_gs

Q_gd

DUT

3mA

Charge

Resistive Switching Test Circuit & Waveforms

R_L

V_DS

90%

V_DS

V_DD

V_GS

R_G

10%

V_GS

DUT

10V

t_d(on)

t_r

t_d(off)

t_f

t _on

t _off

Unclamped Inductive Switching Test Circuit & Waveforms

BV_DSS

--------------------

BV_DSS- V_DD

L

1

2

----

E_AS

=

LI_AS

V_DS

I_D

BV_DSS

I_AS

R_G

V_DD

I_D(t)

V_DD

V_DS(t)

DUT

10V

t _p

Time

Rev. A, February 2002

Peak Diode Recovery dv/dt Test Circuit & Waveforms

+

DUT

V_DS

_

I _SD

L

Driver

R_G

Same Type

as DUT

V_DD

V_GS

• dv/dt controlled by R_G

• I_SDcontrolled by pulse period

Gate Pulse Width

--------------------------

V_GS

D =

Gate Pulse Period

10V

( Driver )

I_FM, Body Diode Forward Current

I _SD

di/dt

( DUT )

I_RM

Body Diode Reverse Current

Body Diode Recovery dv/dt

V_SD

V_DS

( DUT )

V_DD

Body Diode

Forward Voltage Drop

Rev. A, February 2002

Package Dimension

D-PAK

6.60 ±0.20

5.34 ±0.30

2.30 ±0.10

0.50 ±0.10

(0.50)

(4.34)

(0.50)

MAX0.96

0.76 ±0.10

0.50 ±0.10

1.02 ±0.20

2.30 ±0.20

2.30TYP

[2.30±0.20]

6.60 ±0.20

(5.34)

(5.04)

(1.50)

(2XR0.25)

0.76 ±0.10

Dimensions in Millimeters

Rev. A, February 2002

Package Dimension ^(Continued)

I-PAK

2.30 ±0.20

0.50 ±0.10

6.60 ±0.20

5.34 ±0.20

(0.50)

(4.34)

(0.50)

MAX0.96

0.76 ±0.10

0.50 ±0.10

2.30TYP

[2.30±0.20]

Dimensions in Millimeters

Rev. A, February 2002

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not

intended to be an exhaustive list of all such trademarks.

ACEx™

Bottomless™

CoolFET™

FAST^®

FASTr™

FRFET™

OPTOLOGIC™

OPTOPLANAR™

PACMAN™

SMART START™

STAR*POWER™

Stealth™

VCX™

CROSSVOLT™

DenseTrench™

DOME™

EcoSPARK™

E²CMOS™

EnSigna™

GlobalOptoisolator™

GTO™

HiSeC™

ISOPLANAR™

LittleFET™

MicroFET™

MicroPak™

MICROWIRE™

POP™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SyncFET™

TruTranslation™

TinyLogic™

Power247™

PowerTrench^®

QFET™

QS™

QT Optoelectronics™

Quiet Series™

SLIENT SWITCHER^®

FACT™

FACT Quiet Series™

UHC™

UltraFET^®

STAR*POWER is used under license

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY

PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY

LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;

NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR

CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems

which, (a) are intended for surgical implant into the body,

or (b) support or sustain life, or (c) whose failure to perform

when properly used in accordance with instructions for use

provided in the labeling, can be reasonably expected to

result in significant injury to the user.

2. A critical component is any component of a life support

device or system whose failure to perform can be

reasonably expected to cause the failure of the life support

device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or In

Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed

Obsolete

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. H4


型号：	FQU2N100
厂家：	FAIRCHILD SEMICONDUCTOR
描述：	1000V N-Channel MOSFET 1000V N沟道MOSFET
文件：	总9页 (文件大小：623K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

FQU2N100 [FAIRCHILD]

相关型号：

FQU2N100TU

FQU2N100TU

FQU2N30

FQU2N40

FQU2N40TU

FQU2N50

FQU2N50B

FQU2N50BTU

FQU2N50BTU

FQU2N50BTU-WS

FQU2N50BTU_WS

FQU2N50TU