FQP630J69Z [FAIRCHILD]
Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 3 PIN;
| 型号： | FQP630J69Z |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 3 PIN 局域网 开关 脉冲 晶体管 |
| 文件： | 总7页 (文件大小：585K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
QFET N-CHANNEL
FEATURES
FQP630
BV
= 200V
DSS
•
•
•
•
•
•
•
Advanced New Design
R
= 0.4Ω
DS(ON)
Avanced Rugged Technology
Rugged Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
I = 9A
D
TO-220
R
: 0.55Ω (Typ.)
DS(ON)
S-Correction Only
1
2
3
1. Gate 2. Drain 3. Source
ABSOLUTE MAXIMUM RATINGS
Symbol
Characteristics
Drain-to-Source Voltage
Continuous Drain Current (T = 25°C)
Value
200
9
Units
V
V
DSS
C
I
A
D
Continuous Drain Current (T = 100°C)
5.7
36
C
I
Drain Current-Pulsed
①
V
J
DM
V
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
±25
162
9
GS
AS
AR
E
②
mJ
A
I
①
E
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
①
③
7.8
5.5
mJ
V/ns
AR
dv/dt
Total Power Dissipation (T = 25°C)
Linear Derating Factor
78
0.62
W
W/°C
C
P
D
Operating Junction and Storage
Temperature Range
T , T
−55 to +150
J
STG
°C
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
T
300
L
THERMAL RESISTANCE
Symbol
Characteristics
Junction-to-Case
Case-to-Sink
Typ.
Max.
Units
R
−
0.5
−
1.61
−
θJC
R
°C/W
θCS
R
Junction-to-Ambient
62.5
θJA
REV. B
1
1999 Fairchild Semiconductor Corporation
FQP630
QFET N-CHANNEL
Test Conditions
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
C
Symbol
BV
Characteristics
Min.
200
−
Typ.
Max. Units
Drain-Source Breakdown Votlage
Breskdown Voltage Temp. Coeff.
Gate Threshold Voltage
−
0.20
−
−
−
V
V
=0V, I =250µA
DSS
GS D
∆BV/∆T
V/°C I =250µA
D
J
V
2.0
−
4.0
100
−100
1
V
V
V
V
V
V
=5V, I =250µA
GS(th)
DS
GS
GS
DS
DS
D
Gate-Source Leakage, Forward
Gate-Source Leakage, Reverse
−
=25V
I
nA
GSS
DSS
−
−
= −25V
=200V
−
−
I
Drain-to-Source Leakage Current
µA
−
−
10
=160V, T =125°C
C
Static Drain-Source
On-State Resistance
R
−
−
0.4
Ω
V
V
=10V, I =4.5A
④
DS(on)
GS
DS
D
g
Forward Transconductance
Input Capacitance
−
−
−
−
−
−
−
−
−
−
−
4.4
420
85
35
8
−
S
=40V, I =4.5A
④
fs
D
C
550
110
45
iss
oss
V
=0V, V =25V
DS
GS
C
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
pF
ns
f=1MHz
C
rss
t
30
d(on)
V
=100V, I =9A
D
DD
t
75
47
64
19
3
160
110
140
25
r
R =50Ω
G
t
Turn-Off Delay Time
Fall Time
d(off)
④ ⑤
t
f
Q
Total Gate Charge
g
V
=160V, V =10V
GS
DS
Q
Gate-Source Charge
Gate-Drain (Miller) Charge
−
nC
I =9A
D
gs
gd
④ ⑤
Q
9.5
−
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
Characteristics
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Resovery Time
Reverse Resovery Charge
Min.
Typ.
−
Max. Units
Test Conditions
I
−
−
−
−
−
9
36
1.5
−
Integral reverse pn-diode
in the MOSFET
S
A
I
①
④
−
SM
V
−
V
T =25°C, I =9A, V =0V
J S GS
SD
150
0.68
ns
µC
T =25°C, I =9A, V =160V
J
F
DD
Q
rr
di /dt=100A/µs
④
−
F
Notes:
①
②
③
④
⑤
Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
L=3mH, I =9A, V =50V, R =25
Ω, Starting T =25°C
AS
DD
G
J
I
≤ 9A, di/dt ≤ 300µs, V ≤ BV
, Starting T =25°C
SD
DD
DSS
J
Pulse Test: Pulse Width
≤ 300µs, Duty Cycle ≤ 2%
Essentially Independent of Operating Temperature
2
QFET N-CHANNEL
FQP630
Fig 1. Output Characteristics
Fig 2. Transfer Characteristics
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Top :
101
100
10-1
1
10
Bottom : 4.5 V
0
10
150¡É
25¡É
¡Ø Note :
1. 250¥ìs Pulse Test
2. TC = 25¡É
¡Ø Note
1. VDS = 40V
2. 250¥ìs Pulse Test
-55¡É
-1
10
10-1
100
101
2
4
6
8
10
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
Fig 4. Source-Drain Diode Forward Voltage
1.2
0.9
0.6
0.3
0.0
101
VGS = 10V
VGS = 20V
100
¡Ø Note :
1. VGS = 0V
150¡É
25¡É
2. 250¥ìs Pulse Test
¡Ø Note : T = 25¡É
J
-1
10
0
4
8
12
16
20
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Fig 5. Capacitance vs. Drain-Source Voltage
Fig 6. Gate Charge vs. Gate-Source Voltage
1200
1000
800
600
400
200
0
12
10
8
C
C
C
iss = Cgs + Cgd (Cds =shorted)
oss = Cds + Cgd
rss = Cgd
VDS = 40V
VDS = 100V
VDS = 160V
C
iss
¡Ø Note ;
1. VGS = 0 V
2. F = 1 MHz
Coss
Crss
6
4
2
¡Ø Note : I = 9A
D
0
10-1
100
101
0
5
10
15
20
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
3
FQP630
QFET N-CHANNEL
Fig 7. Breakdown Voltage vs. Temperature
Fig 8. On-Resistance vs. Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.2
1.1
1.0
0.9
0.8
¡Ø Note :
1. VGS = 0 V
2. ID =250 ¥ìA
¡Ø Note :
1. VGS =10 V
2. ID =4.5 A
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Fig 9. Max. Safe Operating Area
Fig 10. Max. Drain Current vs. Case Temperature
10
Operation in This Area
is Limited by R DS(on)
102
101
100
10-1
8
6
4
2
0
100 µs
1 ms
10 ms
DC
¡ØNotes :
1. TC = 25 o
2. TJ = 150 o
3. Single Pulse
C
C
100
101
102
25
50
75
100
125
150
[ C]
°
TC, Case Temperature
VDS, Drain-Source Voltage [V]
Fig 11. Thermal Response
1 0 0
D = 0 .5
0 .2
0 .1
¡Ø N o t es
:
1 . Z ¥ è J C(t ) = 1 .61 ¡É /W M ax .
2 . D u ty Fac to r , D =t1 /t2
3 . TJ M - T C = P D M * Z ¥ è J C(t )
1 0 -1
0 .0 5
PDM
0 .0 2
0 .0 1
t1
s in g le p u ls e
t2
1 0 -2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
1 0 0
1 0 1
t1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
4
QFET N-CHANNEL
FQP630
Fig 12. Gate Charge Test Circuit & Waveform
VGS
Same Type
50K
as DUT
Qg
200nF
12V
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
RL
VDS
90%
VDS
VDD
RG
( 0.5 rated VDS )
10%
Vin
DUT
10V
td(on)
tr
td(off)
tf
t on
toff
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
--------------------
BVDSS -- VDD
L
1
2
2
----
EAS
=
LL IAS
VDS
VDD
BVDSS
IAS
ID
RG
ID (t)
VDD
VDS (t)
DUT
10V
t p
Time
5
FQP630
QFET N-CHANNEL
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I S
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• IS controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I S
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
Vf
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
6
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DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
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As used herein:
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the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
相关型号：
FQP65N06J69Z
Power Field-Effect Transistor, 65A I(D), 60V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 3 PIN
FAIRCHILD
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