FQI6N60C [FAIRCHILD]
600V N-Channel MOSFET; 600V N沟道MOSFET型号: | FQI6N60C |
厂家: | FAIRCHILD SEMICONDUCTOR |
描述: | 600V N-Channel MOSFET |
文件: | 总9页 (文件大小:681K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
®
QFET
FQB6N60C / FQI6N60C
600V N-Channel MOSFET
General Description
Features
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
•
•
•
•
•
•
5.5A, 600V, R
= 2.0Ω @V = 10 V
DS(on) GS
Low gate charge ( typical 16 nC)
Low Crss ( typical 7 pF)
Fast switching
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based on half bridge topology.
100% avalanche tested
Improved dv/dt capability
D
!
D
●
◀
▲
●
●
G
!
I2-PAK
FQI Series
D2-PAK
FQB Series
G
S
G D S
!
S
Absolute Maximum Ratings
T = 25°C unless otherwise noted
C
Symbol
Parameter
FQB6N60C / FQI6N60C
Units
V
V
I
Drain-Source Voltage
600
DSS
- Continuous (T = 25°C)
Drain Current
5.5
3.3
22
5.5 *
3.3 *
22 *
A
A
A
D
C
- Continuous (T = 100°C)
C
I
(Note 1)
Drain Current
- Pulsed
DM
V
E
I
E
dv/dt
P
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
± 30
300
5.5
12.5
4.5
V
mJ
A
mJ
V/ns
W
GSS
AS
(Note 2)
(Note 1)
(Note 1)
(Note 3)
AR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
AR
Power Dissipation (T = 25°C)
125
D
C
- Derate above 25°C
Operating and Storage Temperature Range
1.0
-55 to +150
W/°C
°C
T , T
J
STG
Maximum lead temperature for soldering purposes,
T
300
°C
L
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
Parameter
Typ
Max
1.0
40
Units
°C/W
°C/W
°C/W
R
R
R
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient*
Thermal Resistance, Junction-to-Ambient
-
-
-
θJC
θJA
62.5
θJA
* When mounted on the minimum pad size recommended (PCB Mount)
©2004 Fairchild Semiconductor Corporation
Rev. A, March 2004
Electrical Characteristics
T = 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
∆BV
/
V
I
= 0 V, I = 250 µA
GS D
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
600
--
--
--
--
V
DSS
DSS
∆T
= 250 µA, Referenced to 25°C
0.6
V/°C
D
J
I
V
V
V
V
= 600 V, V = 0 V
--
--
--
--
--
--
--
--
1
10
100
-100
µA
µA
nA
nA
DSS
DS
GS
Zero Gate Voltage Drain Current
= 480 V, T = 125°C
DS
GS
GS
C
I
= 30 V, V = 0 V
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
GSSF
GSSR
DS
I
= -30 V, V = 0 V
DS
On Characteristics
V
R
V
V
V
= V , I = 250 µA
Gate Threshold Voltage
Static Drain-Source
On-Resistance
2.0
--
--
4.0
2.0
--
V
Ω
S
GS(th)
DS
GS
DS
GS
D
DS(on)
= 10 V, I = 2.75 A
1.7
4.8
D
g
= 40 V, I = 2.75 A
(Note 4)
Forward Transconductance
--
FS
D
Dynamic Characteristics
C
C
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
--
--
--
620
65
7
810
85
10
pF
pF
pF
iss
V
= 25 V, V = 0 V,
GS
DS
oss
rss
f = 1.0 MHz
Switching Characteristics
t
t
t
t
Q
Q
Q
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
--
--
--
--
--
--
--
15
45
45
45
16
3.5
6.5
40
100
100
100
20
ns
ns
ns
d(on)
V
R
= 300 V, I = 5.5A,
= 25 Ω
DD
D
r
G
d(off)
f
(Note 4, 5)
(Note 4, 5)
ns
nC
nC
nC
g
V
V
= 480 V, I = 5.5A,
DS
GS
D
--
--
= 10 V
gs
gd
Drain-Source Diode Characteristics and Maximum Ratings
I
I
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
--
--
--
--
--
--
--
--
310
2.1
5.5
22
1.4
--
A
A
V
ns
µC
S
SM
V
t
V
V
= 0 V, I = 5.5 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
SD
GS
S
= 0 V, I = 5.5 A,
rr
GS
S
dI / dt = 100 A/µs
(Note 4)
Q
Reverse Recovery Charge
--
F
rr
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 18.2mH, I = 5.5 A, V = 50V, R = 25 Ω, Starting T = 25°C
AS
DD
DD
G
DSS,
J
3. I ≤ 5.5A, di/dt ≤ 200A/µs, V ≤ BV
Starting T = 25°C
J
SD
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2004 Fairchild Semiconductor Corporation
Rev. A, March 2004
Typical Characteristics
VGS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
101
100
101
100
10-1
150oC
Bottom: 4.5 V
-55oC
25oC
10-1
※
Notes :
1. 250µ s Pulse Test
2. TC = 25
※
Notes :
1. VDS = 40V
℃
2. 250µ s Pulse Test
10-2
10
100
101
-1
2
4
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 2. Transfer Characteristics
Figure 1. On-Region Characteristics
6
5
4
3
2
1
0
101
100
VGS = 10V
150
℃
VGS = 20V
25
℃
※
Notes :
1. VGS = 0V
2. 250µ s Pulse Test
※
Note : T = 25℃
J
-1
10
0
2
4
6
8
10
12
14
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
12
10
8
C
iss = Cgs + Cgd (Cds = shorted)
C
oss = C + C
rss = Cds
1000
800
600
400
200
0
gd
C
gd
VDS = 120V
VDS = 300V
VDS = 480V
C
iss
6
Coss
※
Note;
4
1. VGS = 0 V
2. f = 1MHz
C
rss
2
※
Note : ID = 5.5A
0
10-1
100
101
0
4
8
12
16
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
©2004 Fairchild Semiconductor Corporation
Rev. A, March 2004
Typical Characteristics (Continued)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.2
1.1
1.0
※
Notes :
0.9
0.8
1. V = 0 V
2. IDG=S 250 µ A
※
Notes :
1. V = 10 V
2. IDG=S 2.5 A
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
T, Junction Temperature [oC]
T, Junction Temperature [oC]
J
J
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
Operation in This Area
is Limited by R DS(on)
5
4
3
2
1
0
100
1 ms
10 ms
µs
101
100
100 ms
DC
-1
10
※
Notes :
1. TC = 25 oC
2. T = 150 oC
J
3. Single Pulse
-2
10
100
101
102
103
25
50
75
100
125
150
VDS, Drain-Source Voltage [V]
TC, Case Temperature [℃]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
100
D=0.5
0.2
※
Notes :
0.1
1. Z
(t) = 1.00 ℃ /W Max.
10-1
2. DθuJtCy Factor, D=t1/t2
3. TJM - TC
=
PDM * Zθ JC(t)
0.05
PDM
0.02
0.01
t1
t2
single pulse
10-2
10-5
10-4
10-3
10-2
10-1
100
101
t1, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
©2004 Fairchild Semiconductor Corporation
Rev. A, March 2004
Gate Charge Test Circuit & Waveform
VGS
Same Type
50KΩ
as DUT
10V
Qg
12V
200nF
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
10V
td(on)
tr
td(off)
tf
t on
t off
Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
L
1
2
----
--------------------
BVDSS - VDD
EAS
=
LIAS
VDS
ID
2
BVDSS
IAS
RG
VDD
ID (t)
VDD
VDS (t)
DUT
10V
t p
t p
Time
©2004 Fairchild Semiconductor Corporation
Rev. A, March 2004
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
VGS
--------------------------
Gate Pulse Period
D =
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
©2004 Fairchild Semiconductor Corporation
Rev. A, March 2004
Package Dimensions
D2-PAK
4.50 ±0.20
9.90 ±0.20
+0.10
–0.05
1.30
0.10 ±0.15
2.40 ±0.20
0.80 ±0.10
1.27 ±0.10
+0.10
0.50
–0.05
2.54 TYP
2.54 TYP
10.00 ±0.20
(8.00)
(4.40)
10.00 ±0.20
(2XR0.45)
0.80 ±0.10
Dimensions in Millimeters
©2004 Fairchild Semiconductor Corporation
Rev. A, March 2004
Package Dimensions (Continued)
I2-PAK
4.50 ±0.20
9.90 ±0.20
+0.10
–0.05
1.30
1.27 ±0.10
1.47 ±0.10
0.80 ±0.10
+0.10
–0.05
0.50
2.40 ±0.20
2.54 TYP
2.54 TYP
10.00 ±0.20
Dimensions in Millimeters
©2004 Fairchild Semiconductor Corporation
Rev. A, March 2004
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PRODUCTS HEREINTO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOTASSUMEANYLIABILITY
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CONVEYANYLICENSE UNDER ITS PATENTRIGHTS, NORTHE RIGHTS OF OTHERS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I10
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