FQI12N20TU [FAIRCHILD]
Power Field-Effect Transistor, 11.6A I(D), 200V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3;
| 型号： | FQI12N20TU |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Power Field-Effect Transistor, 11.6A I(D), 200V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3 开关 脉冲 晶体管 |
| 文件： | 总13页 (文件大小：756K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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ꢐꢒꢎ!ꢔꢏꢂꢏꢄꢔꢉꢄ ꢍꢁꢂꢄ ꢊꢈ"ꢂꢊꢔꢉꢖꢚꢄꢋꢈꢉꢄ "ꢂꢄꢒꢂꢈꢃꢎꢉꢈ"ꢊꢙꢄ ꢂCꢐꢂꢋꢍꢂꢏꢄꢍꢎ
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ꢝꢉꢌꢉꢚ"ꢋꢋꢌꢔꢖ!ꢋꢘꢌꢙ#ꢙ$ꢉꢌꢙꢆꢘ
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ꢛꢂꢃꢔꢖꢉ
ꢀꢁꢔꢃꢄꢏꢈꢍꢈꢃꢁꢂꢂꢍꢄꢋꢎꢉꢍꢈꢔꢉꢃꢄꢍꢁꢂꢄꢏꢂꢃꢔꢖꢉꢄꢃꢐꢂꢋꢔꢓꢔꢋꢈꢍꢔꢎꢉꢃꢄꢓꢎꢒ
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ꢋꢁꢈꢉꢖꢂꢃꢄꢈꢍꢄꢈꢉꢙꢄꢍꢔꢌꢂꢄꢑꢔꢍꢁꢎꢕꢍꢄꢉꢎꢍꢔꢋꢂꢄꢔꢉꢄꢎꢒꢏꢂꢒꢄꢍꢎꢄꢔꢌꢐꢒꢎ!ꢂ
ꢏꢂꢃꢔꢖꢉ
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ꢞꢂꢌꢔꢋꢎꢉꢏꢕꢋꢍꢎꢒꢄꢒꢂꢃꢂꢒ!ꢂꢃꢄꢍꢁꢂꢄꢒꢔꢖꢁꢍꢄꢍꢎꢄꢌꢈ?ꢂꢄꢋꢁꢈꢉꢖꢂꢃꢄꢈꢍ
ꢈꢉꢙꢄꢍꢔꢌꢂꢄꢑꢔꢍꢁꢎꢕꢍꢄꢉꢎꢍꢔꢋꢂꢄꢔꢉꢄꢎꢒꢏꢂꢒꢄꢍꢎꢄꢔꢌꢐꢒꢎ!ꢂꢄꢏꢂꢃꢔꢖꢉ
ꢝ"ꢃꢎꢊꢂꢍꢂ
ꢅꢎꢍꢄ4ꢉꢄ9ꢒꢎꢏꢕꢋꢍꢔꢎꢉ
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ꢍꢁꢈꢍꢄꢁꢈꢃꢄ"ꢂꢂꢉꢄꢏꢔꢃꢋꢎꢉꢍꢔꢉꢕꢂꢏꢄ"ꢙꢄꢗꢈꢔꢒꢋꢁꢔꢊꢏꢄꢃꢂꢌꢔꢋꢎꢉꢏꢕꢋꢍꢎꢒ
ꢀꢁꢂꢄꢏꢈꢍꢈꢃꢁꢂꢂꢍꢄꢔꢃꢄꢐꢒꢔꢉꢍꢂꢏꢄꢓꢎꢒꢄꢒꢂꢓꢂꢒꢂꢉꢋꢂꢄꢔꢉꢓꢎꢒꢌꢈꢍꢔꢎꢉꢄꢎꢉꢊꢙ
ꢀꢁꢂꢂꢂꢃꢄꢅꢆꢇꢈꢉꢆꢊꢋꢃꢌꢍꢎꢆꢈꢏꢐꢋꢑꢈꢒꢏꢇꢃꢓꢐꢒꢍꢇꢐꢅꢒꢆꢏꢐꢅꢊ
ꢔꢍꢕꢖꢃꢗꢘꢃꢚꢅꢐꢑꢅꢇꢛꢃꢁꢂꢂꢂ
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200V N-Channel QFET
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[E-
Distributor and field sales
representatives
These N-Channel enhancement mode power
field effect transistors are produced using
Fairchild's proprietary, planar stripe, DMOS
technology.
This advanced technology has been especially
tailored to minimize on-state resistance,
provide superior switching performance, and
withstand high energy pulse in the avalanche
and commutation mode. These devices are well
suited for high efficiency switching DC/DC
converters, switch mode power supply, DC-AC
converters for uninterrupted power supply,
motor control.
Quality and reliability
This pagePrint version
Design tools
technical information
buy products
technical support
my Fairchild
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Features
company
●
11.6A, 200V, R
10 V
= 0.28Ω @V
=
DS(on)
GS
●
●
●
●
●
Low gate charge ( typical 18 nC)
Low Crss ( typical 18 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
back to top
Product status/pricing/packaging
Product
Product status
Full Production
Pricing*
Package type
Leads Packing method
FQB12N20TM
$0.69 TO-263(D2PAK)
2
TAPE REEL
* 1,000 piece Budgetary Pricing
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© Copyright 2002 Fairchild Semiconductor
SEARCH | Parametric | Cross Reference
sp
Fairchild Semiconductor
GO
Home >> Find products >>
find products
FQI12N20
Related Links
Products groups
200V N-Channel QFET
Analog and Mixed
Signal
Discrete
Interface
Logic
Microcontrollers
Non-Volatile
Memory
Optoelectronics
Markets and
applications
New products
Product selection and
parametric search
Cross-reference
search
Request samples
Datasheet
Download this
datasheet
Contents
How to order products
General description | Features | Product
status/pricing/packaging
Product Change Notices
(PCNs)
PDF
Support
General description
e-mail this datasheet
[E-
Distributor and field sales
representatives
These N-Channel enhancement mode power
field effect transistors are produced using
Fairchild's proprietary, planar stripe, DMOS
technology.
This advanced technology has been especially
tailored to minimize on-state resistance,
provide superior switching performance, and
withstand high energy pulse in the avalanche
and commutation mode. These devices are well
suited for high efficiency switching DC/DC
converters, switch mode power supply, DC-AC
converters for uninterrupted power supply,
motor control.
Quality and reliability
This pagePrint version
Design tools
technical information
buy products
technical support
my Fairchild
back to top
Features
company
●
11.6A, 200V, R
10 V
= 0.28Ω @V
=
DS(on)
GS
●
●
●
●
●
Low gate charge ( typical 18 nC)
Low Crss ( typical 18 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
back to top
Product status/pricing/packaging
Product
Product status
Full Production
Pricing*
Package type
Leads
Packing method
FQI12N20TU
$0.69 TO-262(I2PAK)
3
RAIL
* 1,000 piece Budgetary Pricing
back to top
Home | Find products | Technical information | Buy products |
Support | Company | Contact us | Site index | Privacy policy
© Copyright 2002 Fairchild Semiconductor
相关型号：
FQI12N60TU
Power Field-Effect Transistor, 10.5A I(D), 600V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3
FAIRCHILD
FQI12P10TU
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FQI12P20TU
Power Field-Effect Transistor, 11.5A I(D), 200V, 0.47ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3
FAIRCHILD
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