FQD13N06TM [FAIRCHILD]
N-Channel QFET® MOSFET 60 V, 10 A, 140 mΩ;
| 型号： | FQD13N06TM |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | N-Channel QFET® MOSFET 60 V, 10 A, 140 mΩ |
| 文件： | 总8页 (文件大小：803K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
November 2013
FQD13N06
N-Channel QFET® MOSFET
60 V, 10 A, 140 mΩ
Description
Features
• 10 A, 60 V, RDS(on) = 140 mΩ (Max.) @ VGS = 10 V,
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, active power
factor correction (PFC), and electronic lamp ballasts.
ID = 5.0 A
•
•
•
Low Gate Charge (Typ. 5.8nC)
Low Crss (Typ. 15 pF)
100% Avalanche Tested
D
D
G
G
S
D-PAK
S
Absolute Maximum Ratings
T = 25°C unless otherwise noted.
C
Symbol
Parameter
FQD13N06TM
Unit
V
V
I
Drain-Source Voltage
60
10
DSS
- Continuous (T = 25°C)
Drain Current
A
D
C
- Continuous (T = 100°C)
6.3
A
C
I
(Note 1)
Drain Current
- Pulsed
40
A
DM
V
E
I
Gate-Source Voltage
± 25
85
V
GSS
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Single Pulsed Avalanche Energy
Avalanche Current
mJ
A
AS
10
AR
E
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
2.8
mJ
V/ns
W
AR
dv/dt
7.0
Power Dissipation (T = 25°C) *
2.5
P
A
D
Power Dissipation (T = 25°C)
28
W
C
- Derate above 25°C
0.22
-55 to +150
W/°C
°C
T , T
Operating and Storage Temperature Range
Maximum lead temperature for soldering,
1/8" from case for 5 seconds
J
STG
T
300
°C
L
Thermal Characteristics
Symbol
Parameter
Unit
FQD13N06TM
RJC
RJA
Thermal Resistance, Junction to Case, Max.
4.5
110
50
Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max.
Thermal Resistance, Junction to Ambient (*1 in2 Pad of 2-oz Copper), Max.
oC/W
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©2000 Fairchild Semiconductor Corporation
FQD13N06 Rev. C1
1
Package Marking and Ordering Information
Part Number
Top Mark
Package
Packing Method Reel Size Tape Width
Tape and Reel
330 mm
Quantity
FQD13N06TM
FQD13N06
DPAK
2500 units
16 mm
Electrical Characteristics
T = 25°C unless otherwise noted.
C
Symbol
Parameter
Test Conditions
Min. Typ.
Max.
Unit
Off Characteristics
BV
V
= 0 V, I = 250 µA
GS D
Drain-Source Breakdown Voltage
60
--
--
--
--
V
DSS
∆BV
/ ∆T
I
= 250 µA, Referenced to
Breakdown Voltage Temperature
Coefficient
DSS
D
0.06
V/°C
25°C
J
I
V
V
V
V
= 60 V, V = 0 V
GS
--
--
--
--
--
--
--
--
1
µA
µA
nA
nA
DSS
DS
DS
GS
GS
Zero Gate Voltage Drain Current
= 48 V, T = 125°C
10
C
I
I
= 25 V, V = 0 V
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
100
-100
GSSF
DS
= -25 V, V = 0 V
GSSR
DS
On Characteristics
V
V
V
V
= V , I = 250 µA
Gate Threshold Voltage
2.0
--
--
4.0
0.14
--
V
Ω
S
GS(th)
DS
GS
DS
GS
D
R
g
= 10 V, I = 5.0 A
Static Drain-Source On-Resistance
Forward Transconductance
0.11
4.9
DS(on)
D
= 25 V, I = 5.0 A
--
FS
D
Dynamic Characteristics
C
C
C
Input Capacitance
--
--
--
240
90
310
120
20
pF
pF
pF
iss
V
= 25 V, V = 0 V,
GS
DS
Output Capacitance
oss
rss
f = 1.0 MHz
Reverse Transfer Capacitance
15
Switching Characteristics
t
t
t
t
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
--
--
--
--
--
--
--
5
20
60
25
40
7.5
--
ns
ns
d(on)
V
= 30 V, I = 6.5 A,
DD
D
25
8
r
R
= 25 Ω
G
ns
d(off)
f
(Note 4)
(Note 4)
15
5.8
2.0
2.5
ns
Q
Q
Q
nC
nC
nC
g
V
V
= 48 V, I = 13 A,
DS
D
= 10 V
gs
gd
GS
--
Drain-Source Diode Characteristics and Maximum Ratings
I
Maximum Continuous Drain-Source Diode Forward Current
--
--
--
--
--
--
--
10
40
1.5
--
A
A
S
I
Maximum Pulsed Drain-Source Diode Forward Current
SM
V
t
V
V
= 0 V, I = 10 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
--
V
SD
GS
S
= 0 V, I = 13 A,
39
40
ns
nC
rr
GS
S
dI / dt = 100 A/µs
Q
Reverse Recovery Charge
--
F
rr
Notes:
Repetitive rating : pulse-width limited by maximum junction temperature.
1.
2.
L = 990 µH, I = 10 A, V = 25 V, R = 25 Ω, starting T = 25°C.
AS
DD
G
J
I
≤ 13 A, di/dt ≤ 300 A/us, V ≤ BV starting T = 25°C.
SD
DD
DSS, J
3.
4. Essentially independent of operating temperature.
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©2000 Fairchild Semiconductor Corporation
FQD13N06 Rev. C1
2
Typical Characteristics
VGS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
101
101
Bottom : 4.5 V
100
100
℃
150
℃
25
※
Notes :
※
Notes :
μ
1. 250 s Pulse Test
1. VDS = 25V
-1
10
℃
2. TC = 25
μ
2. 250 s Pulse Test
℃
-55
-1
10
-1
10
100
101
2
4
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
500
400
300
200
100
0
VGS = 10V
VGS = 20V
101
℃
℃
25
150
※
Notes :
1. VGS = 0V
※
℃
Note : T = 25
μ
2. 250 s Pulse Test
J
100
0.2
0
10
20
30
40
0.4
0.6
0.8
1.0
1.2
1.4
1.6
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
600
500
400
300
200
100
0
12
10
8
C
iss = Cgs + Cgd (Cds = shorted)
oss = Cds + Cgd
rss = Cgd
C
C
VDS = 30V
VDS = 48V
C
iss
※
Notes :
Coss
1. VGS = 0 V
2. f = 1 MHz
6
4
C
rss
2
※
Note : ID = 13 A
6
0
10-1
100
101
4
5
0
1
2
3
7
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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©2000 Fairchild Semiconductor Corporation
FQD13N06 Rev. C1
3
Typical Characteristics (Continued)
2.5
2.0
1.5
1.0
0.5
0.0
1.2
1.1
1.0
※Notes :
1. VGS = 0 V
2. ID = 250 μ A
0.9
0.8
※
Notes :
1. VGS = 10 V
2. ID = 5.0 A
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
10
8
102
Operation in This Area
is Limited by R DS(on)
100 µs
1 ms
10 ms
101
100
6
DC
4
※
Notes :
1. TC = 25 o
2. TJ = 150 o
3. Single Pulse
2
C
C
-1
0
25
10
-1
100
101
102
50
75
100
125
150
10
℃
TC, Case Temperature [
]
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
D = 0 .5
1 0 0
0 .2
※
N o te s
1 . Z θ J C(t)
2 . D u ty F a c to r, D = t1 /t2
:
℃
/W M a x.
=
4 .5
0 .1
3 . T J M
-
T C
=
P D
*
Z θ J C(t)
M
0 .0 5
0 .0 2
PDM
1 0 -1
0 .0 1
t1
s in g le p u ls e
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
1 0 0
1 0 1
t1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
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©2000 Fairchild Semiconductor Corporation
FQD13N06 Rev. C1
4
VGS
Same Type
as DUT
50KΩ
Qg
12V
200nF
300nF
VDS
VGS
Qgs
Qgd
DUT
I
= const.
G
Charge
Figure 12. Gate Charge Test Circuit & Waveform
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
Figure 13. Resistive Switching Test Circuit & Waveforms
BVDSS
--------------------
BVDSS - VDD
L
1
2
2
----
EAS
=
L IAS
VDS
I D
BVDSS
IAS
RG
VDD
ID (t)
V
VDS (t)
VDD
DUT
GS
t p
t p
Time
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
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©2000 Fairchild Semiconductor Corporation
FQD13N06 Rev. C1
5
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
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©2000 Fairchild Semiconductor Corporation
FQD13N06 Rev. C1
6
Mechanical Dimensions
Figure 16. TO252 (D-PAK), Molded, 3-Lead, Option AA&AB
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Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
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©2000 Fairchild Semiconductor Corporation
FQD13N06 Rev. C1
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Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
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Datasheet contains preliminary data; supplementary data will be published at a later
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Not In Production
Rev. I66
8
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FQD13N06 Rev. C1
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