FQB1P50TM [FAIRCHILD]
P-Channel QFET MOSFET - 500 V, - 1.5 A, 10.5 Ohm; P沟道MOSFET QFET - 500 V ， - 1.5 A ， 10.5欧姆
| 型号： | FQB1P50TM |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | P-Channel QFET MOSFET - 500 V, - 1.5 A, 10.5 Ohm |
| 文件： | 总9页 (文件大小：726K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
April 2013
FQB1P50 / FQI1P50
P-Channel QFET® MOSFET
- 500 V, - 1.5 A, 10.5 Ω
Description
Features
- 1.5 A, - 500 V, R
ID = - 0.75 A
= 10.5 Ω (Max.) @ V = - 10 V,
This P-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor®’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and
electronic lamp ballasts.
•
DS(on)
GS
•
•
•
Low Gate Charge (Typ. 11 nC)
Low Crss (Typ. 6.0 pF)
100% Avalanche Tested
•
RoHS Compliant
S
!
D
●
●
G!
▶
▲
G
G
●
D
S
S
D2-PAK
I-PAK
!
D
Absolute Maximum Ratings
T = 25°C unless otherwise noted
C
Symbol
Parameter
FQB1P50 / FQI1P50
Unit
V
V
I
Drain-Source Voltage
-500
-1.5
DSS
- Continuous (T = 25°C)
Drain Current
A
D
C
- Continuous (T = 100°C)
-0.95
-6.0
A
C
I
(Note 1)
Drain Current
- Pulsed
A
DM
V
E
I
Gate-Source Voltage
± 30
V
GSS
AS
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Single Pulsed Avalanche Energy
Avalanche Current
110
mJ
A
-1.5
AR
E
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
6.3
mJ
V/ns
W
AR
dv/dt
-4.5
Power Dissipation (T = 25°C) *
3.13
P
A
D
Power Dissipation (T = 25°C)
63
W
C
- Derate above 25°C
Operating and Storage Temperature Range
0.51
W/°C
°C
T , T
-55 to +150
J
STG
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
T
300
°C
L
Thermal Characteristics
FQB1P50 / FQI1P50
Symbol
Parameter
Unit
R
R
R
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient, Max.
1.98
40
°C/W
°C/W
°C/W
θJC
θJA
θJA
62.5
* When mounted on the minimum pad size recommended (PCB Mount)
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©2008 Fairchild Semiconductor Corporation
1
FQB1P50 / FQI1P50 Rev. C0
Elerical Characteristics
T = 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Off Characteristics
BV
V
= 0 V, I = -250 µA
GS D
Drain-Source Breakdown Voltage
-500
--
--
-
--
--
V
DSS
∆BV
Breakdown Voltage Temperature
Coefficient
DSS
J
I
= -250 µA, Referenced to 25°C
V/°C
D
/
I
∆T
V
V
V
V
= -500 V, V = 0 V
--
--
--
--
--
--
--
--
-1
µA
µA
nA
nA
DSS
DS
GS
Zero Gate Voltage Drain Current
= -400 V, T = 125°C
-10
DS
GS
GS
C
I
I
= -30 V, V = 0 V
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
-100
100
GSSF
DS
= 30 V, V = 0 V
GSSR
DS
On Characteristics
V
V
V
V
= V , I = -250 µA
Gate Threshold Voltage
-3.0
--
--
-5.0
10.5
--
V
Ω
S
GS(th)
DS
GS
DS
GS
D
R
Static Drain-Source
On-Resistance
DS(on)
= -10 V, I = -0.75 A
8.0
D
(Note 4)
g
= -50 V, I = -0.75 A
Forward Transconductance
--
1.26
FS
D
Dynamic Characteristics
C
C
C
Input Capacitance
--
--
--
270
40
350
50
pF
pF
pF
iss
V
= -25 V, V = 0 V,
GS
DS
Output Capacitance
oss
rss
f = 1.0 MHz
Reverse Transfer Capacitance
6.0
8.0
Switching Characteristics
t
t
t
t
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
--
--
--
--
--
--
--
9.0
25
27
30
11
30
60
65
70
14
--
ns
ns
d(on)
V
= -250 V, I = -1.5 A,
DD
D
r
R
= 25 Ω
G
ns
d(off)
f
(Note 4, 5)
ns
Q
Q
Q
nC
nC
nC
g
V
V
= -400 V, I = -1.5 A,
DS
D
2.0
5.6
= -10 V
gs
gd
GS
(Note 4, 5)
--
Drain-Source Diode Characteristics and Maximum Ratings
I
Maximum Continuous Drain-Source Diode Forward Current
--
--
--
--
--
--
--
-1.5
-6.0
-5.0
--
A
A
S
I
Maximum Pulsed Drain-Source Diode Forward Current
SM
V
t
V
V
= 0 V, I = -1.5 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
--
V
SD
GS
S
= 0 V, I = -1.5 A,
200
0.7
ns
µC
rr
GS
S
(Note 4)
dI / dt = 100 A/µs
Q
Reverse Recovery Charge
--
F
rr
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 88mH, I = -1.5A, V = -50V, R = 25 Ω, Starting T = 25°C
AS
DD
G
J
3. I ≤ -1.5A, di/dt ≤ 200A/µs, V ≤ BV
Starting T = 25°C
SD
DD
DSS,
J
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
2
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©2008 Fairchild Semiconductor Corporation
FQB1P50 / FQI1P50 Rev. C0
Typical Characteristics
VGS
Top :
-15.0 V
-10.0 V
-8.0 V
-7.0 V
-6.5 V
-6.0 V
100
Bottom : -5.5 V
100
℃
150
-1
10
℃
25
※
Notes :
μ
※
Notes :
1. 250 s Pulse Test
℃
-55
1. VDS = -50V
2. 250 s Pulse Test
℃
2. TC = 25
μ
-2
-1
10
10
-1
100
101
2
4
6
8
10
10
-VGS , Gate-Source Voltage [V]
-VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
16
14
12
10
8
VGS = - 10V
VGS = - 20V
100
℃
150
℃
25
※
Notes :
1. VGS = 0V
※
℃
Note : T = 25
J
μ
2. 250 s Pulse Test
-1
6
10
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
1
2
3
4
-ID , Drain Current [A]
-VSD , Source-Drain Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
8
600
500
400
300
200
100
0
C
iss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
rss = C
C
VDS = -100V
VDS = -250V
gd
VDS = -400V
C
iss
6
Coss
※
Notes :
4
1. VGS = 0 V
2. f = 1 MHz
C
rss
2
※
Note : ID = -1.5 A
10
0
-1
10
100
101
0
2
4
6
8
12
-VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
3
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©2008 Fairchild Semiconductor Corporation
FQB1P50 / FQI1P50 Rev. C0
Typical Characteristics (Continued)
1.2
1.1
1.0
2.5
2.0
1.5
1.0
0.5
0.0
※Notes :
1. VGS = 0 V
2. ID = -250 μA
0.9
※
Notes :
1. VGS = -10 V
2. ID = -0.75 A
0.8
-100
-100
-50
0
50
100
150
200
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
T, Junction Temperature [oC]
J
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
1.5
1.2
0.9
0.6
0.3
0.0
Operation in This Area
is Limited by R DS(on)
101
100
100 µs
1 ms
10 ms
DC
-1
10
※
Notes :
1. TC = 25 o
2. TJ = 150 o
3. Single Pulse
C
C
-2
10
100
101
102
103
25
50
75
100
125
150
℃
TC, Case Temperature [
]
-VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
1 0 0
D = 0 .5
※
N o te s
:
0 .2
0 .1
℃
/W M a x .
1 . Z θ C (t)
=
1 .9 8
J
2 . D u ty F a c to r, D = t1 /t2
3 . T J M
-
T C
=
P D
* Z θ C (t)
J
M
0 .0 5
1 0 -1
0 .0 2
0 .0 1
PDM
t1
s in g le p u ls e
t2
1 0 -2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
1 0 0
1 0 1
t1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
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©2008 Fairchild Semiconductor Corporation
FQB1P50 / FQI1P50 Rev. C0
4
Gate Charge Test Circuit & Waveform
VGS
Same Type
50KΩ
as DUT
Qg
12V
200nF
-10V
300nF
VDS
VGS
Qgs
Qgd
DUT
-3mA
Charge
Resistive Switching Test Circuit & Waveforms
RL
t on
t off
VDS
td(on)
tr
td(off)
tf
VDD
VGS
VGS
RG
10%
DUT
-10V
90%
VDS
Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
--------------------
BVDSS - VDD
L
1
2
2
----
EAS
=
LIAS
VDS
ID
t p
Time
VDD
VDS (t)
RG
VDD
ID (t)
DUT
-10V
IAS
t p
BVDSS
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©2008 Fairchild Semiconductor Corporation
5
FQB1P50 / FQI1P50 Rev. C0
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
VDS
DUT
_
I SD
L
Driver
RG
Compliment of DUT
(N-Channel)
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
Body Diode Reverse Current
IRM
I SD
( DUT )
di/dt
IFM , Body Diode Forward Current
VSD
VDS
( DUT )
Body Diode
VDD
Forward Voltage Drop
Body Diode Recovery dv/dt
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©2008 Fairchild Semiconductor Corporation
6
FQB1P50 / FQI1P50 Rev. C0
Mechanical Dimensions
D2PAK
Dimensions in Millimeters
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©2008 Fairchild Semiconductor Corporation
7
FQB1P50 / FQI1P50 Rev. C0
Mechanical Dimensions
I2 PAK
Dimensions in Millimeters
www.fairchildsemi.com
©2008 Fairchild Semiconductor Corporation
8
FQB1P50 / FQI1P50 Rev. C0
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®*
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Preliminary
First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
No Identification Needed
Obsolete
Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I64
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©2008 Fairchild Semiconductor Corporation
9
FQB1P50 / FQI1P50 Rev. C0
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