FQB17P10 [FAIRCHILD]
100V P-Channel MOSFET; 100V P沟道MOSFET
| 型号： | FQB17P10 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | 100V P-Channel MOSFET |
| 文件： | 总9页 (文件大小：677K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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FQB17P10TM
16.5A, 100V, 0.19ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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FQB17P10TM
Power Field-Effect Transistor, 16.5A I(D), 100V, 0.19ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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100V N-Channel MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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FQB19N10L
100V LOGIC N-Channel MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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FQB19N10LTM
19A, 100V, 0.11ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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FQB19N10TM
暂无描述Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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FQB19N20
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FQB19N20C
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FQB19N20CTM
Power Field-Effect Transistor, 19A I(D), 200V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK-3Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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FQB19N20CTM
功率 MOSFET，N 沟道，QFET®，200 V，19 A，170 mΩ，D2PAKWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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ONSEMI
FQB19N20L
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FQB19N20LTM
Power Field-Effect Transistor, 21A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, D2PAK-3Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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FQB19N20LTM
N 沟道 QFET® MOSFET 200V, 21A, 140mΩWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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ONSEMI
FQB19N20LTM_NL
暂无描述Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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FQB19N20TM
Power Field-Effect Transistor, 19.4A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, D2PAK-3Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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FQB19N20TM
功率 MOSFET，N 沟道，QFET®，200 V，19.4 A，150 mΩ，D2PAKWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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ONSEMI
FQB19N20_13
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600V N-Channel MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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FQB1N60TM
Power Field-Effect Transistor, 1.2A I(D), 600V, 11.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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FQB1P50
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