FOD4118S [FAIRCHILD]
6-Pin DIP Zero-Cross Triac Drivers; 6引脚DIP零交叉双向可控硅驱动器
| 型号： | FOD4118S |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | 6-Pin DIP Zero-Cross Triac Drivers |
| 文件： | 总12页 (文件大小：293K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
July 2008
FOD410, FOD4108, FOD4116, FOD4118
6-Pin DIP Zero-Cross Triac Drivers
Features
Description
■ 300mA on-state current
■ Zero-voltage crossing
The FOD410, FOD4108, FOD4116 and FOD4118
devices consist of an infrared emitting diode coupled to a
hybrid triac formed with two inverse parallel SCRs which
form the triac function capable of driving discrete triacs.
The FOD4116 and FOD4118 utilize a high efficiency
infrared emitting diode which offers an improved trigger
sensitivity. These devices are housed in a standard 6-pin
dual in-line (DIP) package.
■ High blocking voltage
– 800V (FOD4108, FOD4118)
– 600V (FOD410, FOD4116)
■ High trigger sensitivity
– 1.3mA (FOD4116, FOD4118)
– 2mA (FOD410, FOD4108)
■ High static dv/dt (10,000V/µs)
■ UL, VDE, CSA approved
■ Lead free assembly
Applications
■ Solid-state relays
■ Industrial controls
■ Lighting controls
■ Static power switches
■ AC motor starters
Package
Schematic
6
6
ANODE 1
6 MAIN TERM.
1
1
CATHODE
N/C
NC*
2
3
5
4
6
ZERO
CROSSING
CIRCUIT
MAIN TERM.
1
*DO NOT CONNECT
(TRIAC SUBSTRATE)
©2004 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FOD410, FOD4108, FOD4116, FOD4118 Rev. 1.1.4
Absolute Maximum Ratings (T = 25°C unless otherwise noted)
A
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
Parameters
Device
Value
Units
TOTAL DEVICE
T
Storage Temperature
All
All
All
All
All
-55 to +150
-55 to +100
260 for 10 sec
125
°C
°C
STG
T
Operating Temperature
OPR
T
Lead Solder Temperature (Wave)
Junction Temperature Range
°C
SOL
T
°C
J
(1)
V
Isolation Test Voltage
5000
Vac(rms)
ISO
(rms AC voltage, 60Hz, 1 min. duration)
Total Device Power Dissipation @ 25°C
Derate above 25°C
P
All
500
8.3
mW
D
mW/°C
EMITTER
I
Continuous Forward Current
Reverse Voltage
All
All
All
30
6
mA
V
F
V
P
R
D
Total Power Dissipation 25°C Ambient
Derate above 25°C
50
5.4
mW
mW/°C
DETECTOR
V
Off-State Output Terminal Voltage
FOD410, FOD4116
FOD4108, FOD4118
All
600
800
3
V
A
DRM
I
Peak Non-Repetitive Surge Current
(single cycle 60Hz sine wave)
TSM
I
Peak On-State Current
All
All
300
450
6.25
mA
mW
TM
P
Total Power Dissipation @ 25°C Ambient
Derate above 25°C
D
mW/°C
Note:
1. Isolation voltage, V , is an internal device dielectric breakdown rating. For this test, Pins 1, 2 and 3 are common,
ISO
and Pins 4, 5 and 6 are common.
©2004 Fairchild Semiconductor Corporation
FOD410, FOD4108, FOD4116, FOD4118 Rev. 1.1.4
www.fairchildsemi.com
2
Electrical Characteristics (T = 25°C Unless otherwise specified)
A
Individual Component Characteristics
Symbol
EMITTER
Parameters
Test Conditions
Device
Min. Typ.* Max Units
V
Input Forward Voltage
I = 20mA
All
All
1.25
1.5
10
V
F
F
I
Reverse Leakage
Current
V
= 6V
R
0.0001
µA
R
DETECTOR
I
Peak Blocking Current,
Either Direction
I = 0,
V
V
V
V
= 800V
= 600V
= 800V
= 600V
FOD4108,
FOD4118
3
3
100
100
µA
µA
D(RMS)
F
D
D
D
D
(2)
T = 100°C
A
FOD410,
FOD4116
I
Reverse Current
T = 100°C
FOD4108,
FOD4118
R(RMS)
A
FOD410,
FOD4116
(4)
dv/dt
Critical Rate of Rise of
Off-State Voltage
I = 0 (Fig. 11)
10,000
V/µs
F
Transfer Characteristics
Symbol DC Characteristics
Test Conditions
Device
Min. Typ.* Max. Units
(3)
I
LED Trigger Current
Main Terminal Voltage = 5V
FOD410,
FOD4108
0.65
0.65
2.2
2.0
1.3
3
mA
FT
FOD4116,
FOD4118
V
Peak On-StateVoltage,
Either Direction
I
= 300 mA peak, I = rated I
FT
All
All
All
V
TM
TM
F
I
Holding Current,
Either Direction
V = 3V
200
500
µA
H
T
I
Latching Current
Turn-On Time
V = 2.2V
5
mA
µs
L
T
t
PF = 1.0,
V
V
= V
= V
= 565 VAC FOD4108
60
ON
RM
RM
DM
DM
I = 300mA
T
= 424 VAC
FOD410,
FOD4116,
FOD4118
t
Turn-Off Time
V
V
= V
= V
= 565 VAC FOD4108
52
µs
OFF
RM
RM
DM
DM
= 424 VAC
FOD410,
FOD4116,
FOD4118
dv/dt
Critical Rate of Rise of
Voltage at Current
Commutation
V
= 0.67 V
,
T = 25°C
All
10,000
5,000
V/µs
crq
D
DRM
j
di/dt ≤ 15 A/ms
crq
T = 80°C
j
di/dt
Critical Rate of Rise of
On-State Current
All
All
8
A/µs
V/µs
cr
dV(IO)/dt Critical Rate of Rise of I = 0A,
10,000
T
Coupled Input/Output
Voltage
V
= V
= 424VAC
DM
RM
*Typical values at T = 25°C
A
©2004 Fairchild Semiconductor Corporation
FOD410, FOD4108, FOD4116, FOD4118 Rev. 1.1.4
www.fairchildsemi.com
3
Electrical Characteristics (T = 25°C Unless otherwise specified) (Continued)
A
Zero Crossing Characteristics
Symbol
DC Characteristics
Test Conditions
Min.
Typ.*
Max. Units
V
Inhibit Voltage (MT1-MT2 voltage
above which device will not trigger)
I = Rated I
FT
8
25
V
INH
F
I
Leakage in Inhibited State
I = Rated I ,
20
200
µA
DRM2
F
FT
Rated V
, off state
DRM
Isolation Characteristics
Symbol Characteristics
Test Conditions
Min.
Typ.*
Max.
Units
(5)
V
Input-Output Isolation
Voltage
f = 60Hz, t = 1 min.
5000
Vac(rms)
ISO
*Typical values at T = 25°C
A
Notes:
2. Test voltage must be applied within dv/dt rating.
3. All devices are guaranteed to trigger at an I value less than or equal to max I . Therefore, recommended operating
F
FT
I lies between max I (2mA for FOD410 and FOD4108 and 1.3mA for FOD4116 and FOD4118 and the absolute
F
FT
max I (60mA).
F
4. This is static dv/dt. See Figure 11 for test circuit. Commutating dv/dt is a function of the load-driving thyristor(s) only.
5. Isolation voltage, V , is an internal device dielectric breakdown rating. For this test, Pins 1, 2 and 3 are common,
ISO
and Pins 4, 5 and 6 are common.
Typical Application
Typical circuit for use when hot line switching is required.
In this circuit the “hot” side of the line is switched and the
load connected to the cold or neutral side. The load may
be connected to either the neutral or hot line.
R is calculated so that I is equal to the rated I of the
in F FT
part, 2mA for FOD410 and FOD4108, 1.3mA for
FOD4116 and FOD4118. The 39Ω resistor and 0.01µF
capacitor are for snubbing of the triac and may or may
not be necessary depending upon the particular triac
and load use.
Rin
360 Ω
1
2
6
5
HOT
VCC
FOD410
FOD4108
FOD4116
FOD4118
FKPF12N80
39*Ω
3
4
240 VAC
0.01µF
330 Ω
LOAD
NEUTRAL
* For highly inductive loads (power factor < 0.5), change this value to 360 ohms.
Figure 1. Hot-Line Switching Application Circuit
©2004 Fairchild Semiconductor Corporation
FOD410, FOD4108, FOD4116, FOD4118 Rev. 1.1.4
www.fairchildsemi.com
4
Typical Performance Curves
Figure 3. Normalized LED Trigger Current (I
)
FT
Figure 2. Forward Voltage (V ) vs. Forward Current (I )
F
F
vs. Ambient Temperature (T )
A
1.8
1.6
1.4
1.2
1.0
0.8
0.6
1.6
1.4
1.2
1.0
0.8
0.6
V
= 5.0V
AK
Normalized to T = 25°C
A
-55°C
25°C
85°C
-60
-40
-20
T – AMBIENT TEMPERATURE (°C)
A
0
20
40
60
80
100
0.1
1
10
100
I
F
– FORWARD CURRENT (mA)
Figure 4. Peak LED Current vs. Duty Factor, Tau
Figure 5. Trigger Delay Time
100
10
1
10000
1000
t
= t(I /I
FT 25°C)
D
F
τ
V
= 400V
D
P-P
F = 60Hz
Duty Factor
0.005
0.01
t
0.02
τ
t
DF =
0.05
0.1
0.2
0.5
100
10
10-6
10-5
10-4
10-3
10-2
10-1
100
101
1
10
/I – NORMALIZED I (mA)
100
t – LED PULSE DURATION (s)
I
FT
F
F
Figure 6. Pulse Trigger Current
Figure 7. On-State Voltage (V ) vs. On-State Current (I
)
TM
TM
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
1000
V
= 250V
L
P-P
F = 60Hz
Normalized to DC
100
10
1
T
A
= 100°C
T
= 25°C
A
0
200
400
600
800
1000
0
1
2
3
4
5
6
P
W
– PULSE WIDTH (µs)
V
TM
– ON-STATE VOLTAGE (V)
©2004 Fairchild Semiconductor Corporation
FOD410, FOD4108, FOD4116, FOD4118 Rev. 1.1.4
www.fairchildsemi.com
5
Typical Performance Curves (Continued)
Figure 8. Normalized Holding Current (I )
H
Figure 9. Off-State Current (I ) vs. Ambient Temperature (T )
1000
BD
A
vs. Ambient Temperature (T )
A
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
Normalized to T = 25°C
A
V
D
= V
DRM
f = 60Hz
100
10
1
0.1
20
40
60
80
100
0
-60
-40
-20
0
20
40
60
80
100
T
A
– AMBIENT TEMPERATURE (°C)
T
A
– AMBIENT TEMPERATURE (°C)
Figure 10. Normalized Inhibit Voltage (V
)
Figure 11. Normalized Leakage in Inhibit State (I
)
INH
DRM
vs. Ambient Temperature (T )
vs. Ambient Temperature (T )
A
A
1.2
1.1
1.0
0.9
0.8
2.5
2.0
1.5
1.0
0.5
0.0
I
= Rated I
FT
= 600V
F
I
= Rated I
FT
V
F
DRM
Normalized to T = 25°C
Normalized to T = 25°C
A
A
-60
-40
-20
0
20
40
60
80
100
-60
-40
-20
T – AMBIENT TEMPERATURE (°C)
A
0
20
40
60
80
100
T
– AMBIENT TEMPERATURE (°C)
A
Figure 12. Current Reduction
350
300
250
200
150
100
I
TP
= f(T )
A
50
-60
-40
-20
0
20
40
60
80
100
T
A
– AMBIENT TEMPERATURE (°C)
©2004 Fairchild Semiconductor Corporation
FOD410, FOD4108, FOD4116, FOD4118 Rev. 1.1.4
www.fairchildsemi.com
6
5V
VCC
180
R1
ZL
300
1
2
6
4
R2
FOD410
FOD4108
C1
FOD4116
FOD4118
115
Vac
7400
NOTE: Circuit supplies 25mA drive to gate of triac
at Vin = 25V and TA < 70°C
TRIAC
IGT
R2
C
15 mA
30 mA
50 mA
2400
1200
800
0.1
0.2
0.3
27
2W
VDRM/VRRM SELECT
1000
10 WATT
WIREWOUND
6
4
X100 PROBE
1
DUT
DIFFERENTIAL
PREAMP
20k
2W
0.33 1000V
0.047
1000V
2
X100 PROBE
470pF
dV
dt
VERNIER
MOUNT DUT ON
TEMPERATURE CONTROLLED
Cu PLATE
0.001
0.005
0.01
100
2W
1 MEG
2W EACH
1.2 MEG
82
2W
2W
POWER
TEST
0.047
0.1
1N914
RFP4N100
20V
0.47
0-1000V
10mA
56
2W
1000
1/4W
1N967A
18V
f = 10 Hz
PW = 100 µs
50 Ω PULSE
GENERATOR
ALL COMPONENTS ARE NON-INDUCTIVE UNLESS SHOWN
dV
dt
Figure 11. Circuit for Static
Measurement of Power Thyristors
©2004 Fairchild Semiconductor Corporation
FOD410, FOD4108, FOD4116, FOD4118 Rev. 1.1.4
www.fairchildsemi.com
7
240 VAC
R1
D1
1
2
6
5
VCC
FOD410
Rin
FOD4108
SCR
FOD4116
FOD4118
SCR
360Ω
3
4
R2
D2
LOAD
Figure 12. Inverse-Parallel SCR Driver Circuit
Suggested method of firing two, back-to-back SCR’s with a Fairchild triac driver. Diodes can be 1N4001; resistors,
R1 and R2, are optional 330Ω.
Note: This optoisolator should not be used to drive a load directly. It is intended to be a discrete triac driver device
only.
©2004 Fairchild Semiconductor Corporation
FOD410, FOD4108, FOD4116, FOD4118 Rev. 1.1.4
www.fairchildsemi.com
8
Package Dimensions
Through Hole
Surface Mount
0.307 (7.8)
0.267 (6.8)
0.307 (7.8)
0.267 (6.8)
0.412 (10.46)
0.388 (9.86)
0.275 (7.0)
0.236 (6.0)
0.275 (7.0)
0.236 (6.0)
0.051 (1.3)
0.043 (1.1)
0.312 (7.92)
0.288 (7.32)
0.312 (7.92)
0.288 (7.32)
0.157 (4.0)
0.118 (3.0)
0.157 (4.0)
0.118 (3.0)
0.020 (0.50)
0.010 (0.25)
0.020 (0.5)
0.024 (0.6)
0.024 (0.6)
0.016 (0.4)
0.100 [2.54]
0.049 (1.25)
0.295 (0.75)
0.100 (2.54)
0.016 (0.4)
0.4" Lead Spacing
Recommended Pad Layout for Surface Mount
Leadforms
0.307 (7.8)
0.267 (6.8)
0.060 (1.5)
0.275 (7.0)
0.236 (6.0)
0.51 (1.3)
0.100 (2.54)
0.354 (9.0)
0.030 (0.76)
0.157 (4.0)
0.118 (3.0)
0.130 (3.3)
0.090 (2.3)
0.020 (0.50)
0.010 (0.25
0.100 [2.54]
0.024 (0.6)
0.016 (0.4)
)
0.420 (10.66)
0.380 (9.66)
Note:
All dimensions are in inches (millimeters)
©2004 Fairchild Semiconductor Corporation
FOD410, FOD4108, FOD4116, FOD4118 Rev. 1.1.4
www.fairchildsemi.com
9
Ordering Information
Order Entry Identifier
Option
None
S
(example)
Description
FOD410
Standard Through Hole Device
FOD410S
FOD410SD
FOD410T
Surface Mount Lead Bend
SD
Surface Mount; Tape and reel
T
0.4" Lead Spacing
V
FOD410V
FOD410TV
FOD410SV
FOD410SDV
IEC60747-5-2 certification
TV
IEC60747-5-2 certification, 0.4" Lead Spacing
IEC60747-5-2 certification, Surface Mount
IEC60747-5-2 certification, Surface Mount, Tape & Reel
SV
SDV
Marking Information
1
2
FOD410
6
V
X YY D
5
3
4
Definitions
1
2
Fairchild logo
Device number
VDE mark indicates IEC60747-5-2 certified (Note: Only appears on
parts ordered with VDE option – See order entry table)
3
4
5
6
One digit year code, e.g., ‘7’
Two digit work week ranging from ‘01’ to ‘53’
Assembly package code
©2004 Fairchild Semiconductor Corporation
FOD410, FOD4108, FOD4116, FOD4118 Rev. 1.1.4
www.fairchildsemi.com
10
Carrier Tape Specifications
12.0 ± 0.1
2.0 ± 0.1
Ø1.55 ±0.05
1.75 ± 0.10
0.30 ± 0.05
4.2 ± 0.2
4.0 ± 0.1
7.5 ± 0.1
16.3
15.7
7.7 ±0.1
0.1 MAX
10.4 ±0.1
User Direction of Feed
Note:
All dimensions are in inches (millimeters).
Reflow Profile
245C, 10–30 s
300
250
200
150
100
50
260C peak
Time above 183C, <160 sec
Ramp up = 2–10C/sec
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
Time (Minute)
• Peak reflow temperature: 260C (package surface temperature)
• Time of temperature higher than 183C for 160 seconds or less
• One time soldering reflow is recommended
©2004 Fairchild Semiconductor Corporation
FOD410, FOD4108, FOD4116, FOD4118 Rev. 1.1.4
www.fairchildsemi.com
11
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global
subsidiaries, and is not intended to be an exhaustive list of all such trademarks.
ACEx®
PDP-SPM™
SupreMOS™
FPS™
Power220®
SyncFET™
Build it Now™
CorePLUS™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK®
EZSWITCH™ *
™
FRFET®
POWEREDGE®
Power-SPM™
PowerTrench®
Programmable Active Droop™
QFET®
®
Global Power ResourceSM
Green FPS™
Green FPS™e-Series™
GTO™
i-Lo™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
The Power Franchise®
TinyBoost™
TinyBuck™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
µSerDes™
UHC®
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
SMART START™
SPM®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
®
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
MicroPak™
MillerDrive™
Motion-SPM™
OPTOLOGIC®
FAST®
Ultra FRFET™
UniFET™
VCX™
OPTOPLANAR®
FastvCore™
®
FlashWriter® *
* EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS
PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems 2. A critical component in any component of a life support,
which, (a) are intended for surgical implant into the body or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in a significant injury of the user.
device, or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
This datasheet contains the design specifications for product
development. Specifications may change in any manner without notice.
Advance Information
Formative or In Design
This datasheet contains preliminary data; supplementary data will be
published at a later date. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve design.
Preliminary
First Production
Full Production
Not In Production
This datasheet contains final specifications. Fairchild Semiconductor
reserves the right to make changes at any time without notice to improve
the design.
No Identification Needed
Obsolete
This datasheet contains specifications on a product that has been
discontinued by Fairchild Semiconductor. The datasheet is printed for
reference information only.
Rev. I33
©2004 Fairchild Semiconductor Corporation
FOD410, FOD4108, FOD4116, FOD4118 Rev. 1.1.4
www.fairchildsemi.com
12
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