FOD3181T [FAIRCHILD]
0.5A Ouput Current, High Speed MOSFET Gate Driver Optocoupler; 0.5A输出继电器电流，高速MOSFET栅极驱动光电耦合器
| 型号： | FOD3181T |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | 0.5A Ouput Current, High Speed MOSFET Gate Driver Optocoupler |
| 文件： | 总12页 (文件大小：740K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
January 2007
FOD3181
tm
0.5A Ouput Current, High Speed MOSFET Gate Driver
Optocoupler
Features
Description
■ Guaranteed operating temperature range of -20°C to
The FOD3181 is a 0.5A Output Current, High Speed
MOSFET Gate Drive Optocoupler. It consists of a
gallium aluminum arsenide (AlGaAs) light emitting diode
optically coupled to a CMOS integrated circuit with a
power stage. The power stage consists of a PMOS pull-
up and a NMOS pull-down power transistor. It is ideally
suited for high frequency driving of MOSFETs used in
Plasma Display Panels (PDPs), motor control invertor
applications, and high performance DC/DC converters.
+85°C
■ 0.5A minimum peak output current
■ High speed response: 500ns max propagation delay
over temperature range
■ Wide V operating range: 10V to 20V
CC
■ 5000Vrms, 1 minute isolation
■ Minimum creepage distance of 7.0mm
■ Minimum clearance distance of 7.0mm
■ C-UL, UL and VDE* approved
The device is packaged in an 8-pin dual in-line housing
compatible with 260°C reflow processes for lead free
solder compliance.
■ 10kV/µs minimum common mode rejection (CMR) at
V
= 1,500V
CM
■ R
of 1.5Ω (typ.) offers lower power dissipation
DS(ON)
Applications
■ Plasma Display Panel
■ High performance DC/DC convertor
■ High performance switch mode power supply
■ High performance uninterruptible power supply
■ Isolated Power MOSFET gate drive
*Requires ‘V’ ordering option
Functional Block Diagram
FOD3181
1
2
3
4
8
7
NO CONNECTION
ANODE
VCC
OUTPUT
8
1
CATHODE
6 OUTPUT
5 VEE
NO CONNECTION
8
8
Note:
1
A 0.1µF bypass capacitor must be connected
between pins 5 and 8.
1
©2006 Fairchild Semiconductor Corporation
1
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FOD3181 Rev. 1.0.3
Absolute Maximum Ratings
Symbol
Parameter
Value
Units
T
Storage Temperature
Operating Temperature
Junction Temperature
Lead Solder Temperature
-40 to +125
°C
°C
°C
°C
mA
ns
A
STG
T
-20 to +85
OPR
T
-20 to +125
J
T
260 for 10 sec.
SOL
(1)
I
25
250
1.0
5
Average Input Current
F(AVG)
I
Minimum Rate of Rise of LED Current
Peak Transient Input Current (<1µs pulse width, 300pps)
Reverse Input Voltage
F(tr)
I
F(TRAN)
V
V
R
(2)
I
1.5
A
“High” Peak Output Current
OH(PEAK)
(2)
I
1.5
A
V
“Low” Peak Output Current
OL(PEAK)
V
– V
EE
Supply Voltage
Output Voltage
-0.5 to 25
CC
V
0 to V
V
O(PEAK)
CC
(4)
P
250
300
mW
mW
Output Power Dissipation
O
(4)
P
Total Power Dissipation
D
Recommended Operating Conditions
Symbol
Parameter
Value
Units
V
– V
EE
Power Supply
10 to 20
12 to 18
0 to 0.8
V
mA
V
CC
I
Input Current (ON)
Input Voltage (OFF)
Operating Temperature
F(ON)
V
F(OFF)
T
-20 to +85
°C
OPR
2
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FOD3181 Rev. 1.0.3
Electrical-Optical Characteristics (DC) (T = -20°C to +70°C)
A
Over recommended operating conditions unless otherwise specified.
Symbol
Parameter
Test Conditions
Min.
0.5
Typ.*
Max.
Unit
A
(2)(3)
I
V
V
= (V –V – 1V)
CC EE
OH
OH
High Level Output Current
(2)(3)
(5)(6)
I
= (V –V – 1V)
0.5
A
OL
OL
CC
EE
Low Level Output Current
V
I
I
= -100mA
= 100mA
V – 0.5
CC
V
OH
High Level Output Voltage
O
O
(5)(6)
V
V + 0.5
EE
V
OL
Low Level Output Voltage
High Level Supply Current
I
Output Open
I = 7 to 10mA
4.8
5.0
6.0
mA
CCH
F
I
Low Level Supply Current
Output Open
6.0
10
mA
CCL
V = 0 to 0.8V
F
I
Threshold Input Current Low to High
I
= 0mA, V > 5V
mA
V
FLH
O
O
V
Threshold Input Voltage High to Low I = 0mA, V < 0.5V
0.8
1.2
FHL
O
O
V
Input Forward Voltage
I = 10mA
1.5
1.8
V
F
F
∆V / T
Temperature Coefficient of
Forward Voltage
I = 10mA
-1.5
mV/°C
F
A
F
BV
Input Reverse Breakdown Voltage
Input Capacitance
I = 10µA
5
V
R
R
C
f = 1MHz, V = 0V
60
pF
IN
F
* All typical values at T = 25°C
A
Switching Characteristics (T = -20°C to +70°C)
A
Over recommended operating conditions unless otherwise specified.
Symbol
Parameter
Test Conditions
Min. Typ.* Max. Unit
t
Propagation Delay Time to High I = 10mA, R = 10Ω, f = 250kHz,
50
135
500
ns
PLH
F
g
(7)
Duty Cycle = 50%, C = 10nF
Output Level
g
t
Propagation Delay Time to Low
50
105
500
ns
PHL
(7)
Output Level
t
Rise Time
C = 10nF, R = 10Ω
75
55
ns
ns
r
L
g
t
Fall Time
f
| CM |
Output High Level Common
T = +25°C, I = 7 to 10mA,
10
10
kV/µs
H
A
f
(8)(9)
V
= 1.5kV, V = 20V
Mode Transient Immunity
CM
CC
| CM |
Output Low Level Common
T = +25°C, V = 0V, V = 1.5kV,
CM
kV/µs
L
A
f
(8)(10)
V
= 20V
Mode Transient Immunity
CC
* All typical values at T = 25°C
A
Isolation Characteristics (T = -20°C to +70°C)
A
Symbol
Parameter
Test Conditions
Min.
Typ.*
Max.
Unit
(11)(12)
V
T = 25°C, R.H. < 50%,
5000
V
rms
ISO
A
Withstand Isolation Voltage
t = 1min., I ≤ 20 µA
I-O
(12)
11
R
C
V
= 500V
Ω
I-O
Resistance (input to output)
Capacitance (input to output)
I-O
10
Freq. = 1MHz
1
pF
I-O
* All typical values at T = 25°C
A
3
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FOD3181 Rev. 1.0.3
Notes:
1. Derate linearly above +70°C free air temperature at a rate of 0.3mA/°C.
2. The output currents I and I are specified with a capacitive current limited load = (3 x 0.01µF) + 0.5Ω,
OH
OL
frequency = 8kHz, 50% DF. The maximum pulse width of the output current is 300ns, maximum duty cycle =
0.48%. Output currents specified for different values of V for V – V = 20V with the formula:
DS
CC
EE
V
= (V – V ) – (I x R
).
OH
CC
EE
OH
DS(ON)
This guarantees operation at I peak minimum = 2.0A for -40°C to +100°C operating temperature range.
O
3. The output currents I and I are specified with a capacitive current limited load = (3 x 0.01µF) + 40Ω,
OH
OL
frequency = 8kHz, 50% DF. The maximum pulse width of the output current is 1.5µs, maximum duty cycle = 2.4%.
Output currents specified for different values of V for V – V = 20V with the formula:
DS
CC
EE
V
= (V – V ) – (I x R
).
OL
CC
EE
OL
DS(ON)
This guarantees operation at I peak minimum = 0.5A for -40°C to +100°C operating temperature range.
O
4. No derating required across operating temperature range.
5. In this test, V is measured with a dc load current. When driving capacitive load V will approach V as I
OH
OH
OH
CC
approaches zero amps.
6. Maximum pulse width = 1ms, maximum duty cycle = 20%.
7.
t
propagation delay is measured from the 50% level on the falling edge of the input pulse to the 50% level of the
PHL
falling edge of the V signal. t
propagation delay is measured from the 50% level on the rising edge of the input
O
PLH
pulse to the 50% level of the rising edge of the V signal.
O
8. Pin 1 and 4 need to be connected to LED common.
9. Common mode transient immunity in the high state is the maximum tolerable dV /dt of the common mode pulse
CM
V
to assure that the output will remain in the high state (i.e. V > 10.0V).
O
CM
10. Common mode transient immunity in a low state is the maximum tolerable dV /dt of the common mode pulse,
CM
V
, to assure that the output will remain in a low state (i.e. V < 1.0V).
O
CM
11. In accordance with UL 1577, each optocoupler is proof tested by applying an insulation test voltage > 6000Vrms
for 1 second (leakage detection current limit I < 5µA).
I-O
12. Device considered a two-terminal device: pins on input side shorted together and pins on output side shorted
together.
4
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FOD3181 Rev. 1.0.3
Typical Performance Curves
Fig. 2 Low To High Input Current Threshold
vs. Ambient Temperature
Fig. 1 Input Forward Current vs. Forward Voltage
100
6
5
4
3
2
1
0
V
V
= 10 to 20V
= 0
CC
EE
Output = Open
10
T
= 100oC
T
= -40oC
A
A
1
0.1
T
= 25oC
A
0.01
0.001
0.6
0.8
1.0
V
1.2
1.4
1.6
1.8
2.0
2.2
-40
-20
0
20
40
60
80
100
– Forward Voltage (V)
T
– Ambient Temperature (°C)
F
A
Fig. 3 Output Low Voltage vs. Ambient Temperature
Fig. 4 High Output Voltage Drop vs. Ambient Temperature
0.30
0.00
V
= 10 to 20V, V = 0
EE
V (OFF) = -3.0 to 0.8V
F
CC
I
= 100mA
I
= 10 to 16 mA
= -100 mA
OUT
F
0.25
0.20
0.15
0.10
0.05
0.00
-0.05
-0.10
-0.15
-0.20
-0.25
-0.30
V
= 10 to 20V
I
OUT
CC
EE
V
= 0
-40
-20
0
20
40
60
80
100
-40
-20
0
20
40
60
80
100
o
T
– Ambient Temperature (°C)
T
– Ambient Temperature ( C)
A
A
Fig. 5 Supply Current vs. Ambient Temperature
Fig. 6 Supply Current vs. Supply Voltage
6.2
5.8
5.4
5.0
4.6
4.2
3.8
6.2
5.8
5.4
5.0
4.6
4.2
3.8
V
= 20V, V = 0
EE
I
I
= 10mA (for I
)
CC
F
CCH
)
I
= 10 mA (for I
= 0 mA (for I
)
= 0mA (for I
F
CCH
)
F
CCL
I
T
= 25oC, V = 0V
F
CCL
A
EE
I
I
CCL
I
CCL
CCH
I
CCH
-40
-20
0
20
40
60
80
100
10
12
14
16
18
20
T
– Ambient Temperature (°C)
V
CC
– Supply Voltage (V)
A
5
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FOD3181 Rev. 1.0.3
Fig. 8 Propagation Delay vs. Forward LED Current
Fig. 7 Propagation Delay vs. Load Capacitance
200
180
160
140
120
100
80
200
180
160
140
120
100
80
V
= 20V, V = 0
V = 20V, V = 0
CC EE
CC
EE
I
= 10mA, T = 25oC
R
= 10Ω, C = 10nF
G
G
F
A
f = 250 kHz, D. Cycle = 50%
R
= 10Ω, C = 10nF
G
G
T
= 25oC
f = 250 kHz, D. Cycle = 50%
A
t
PHL
t
PHL
t
t
PLH
PLH
60
60
5
10
15
20
25
6
8
10
12
14
16
C
– Load Capacitance (nF)
I
– Forward LED Current (mA)
G
F
Fig. 10 Propagation Delay vs. Ambient Temperature
Fig. 9 Propagation Delay vs. Series Load Resistance
200
180
160
140
120
100
80
200
180
160
140
120
100
80
V
= 20V, V = 0
V
= 20V, V = 0
EE
CC
CC
EE
I
= 10mA, T = 25oC
I
= 10 mA
F
A
F
C
= 10nF
R
= 10Ω, C = 10nF
G
G
G
f = 250 kHz, D. Cycle = 50%
f = 250kHz, D. Cycle = 50%
t
PHL
t
PHL
t
PLH
t
PLH
60
60
10
20
30
40
50
-40
-20
0
20
40
60
80
100
R
– Series Load Resistance (Ω)
T
– Ambient Temperature (°C)
G
A
Fig. 11 Propagation Delay vs. Supply Voltage
180
160
140
120
100
80
I
= 10mA, T = 25oC
A
F
R
= 10Ω, C = 10nF
G
G
f = 250 kHz, D. Cycle = 50%
t
PHL
t
PLH
60
10
15
20
25
V
– Supply Voltage (V)
CC
6
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FOD3181 Rev. 1.0.3
Package Dimensions
Through Hole
0.4" Lead Spacing
PIN 1
ID.
PIN 1
ID.
0.270 (6.86)
0.250 (6.35)
0.270 (6.86)
0.250 (6.35)
0.390 (9.91)
0.370 (9.40)
0.070 (1.78)
0.045 (1.14)
0.390 (9.91)
0.370 (9.40)
0.020 (0.51) MIN
0.200 (5.08)
0.140 (3.55)
0.070 (1.78)
0.045 (1.14)
0.154 (3.90)
0.120 (3.05)
0.004 (0.10) MIN
0.200 (5.08)
0.140 (3.55)
0.022 (0.56)
0.016 (0.41)
15° MAX
0.016 (0.40)
0.008 (0.20)
0.154 (3.90)
0.120 (3.05)
0.300 (7.62)
TYP
0.100 (2.54) TYP
0.022 (0.56)
0.016 (0.41)
0° to 15°
0.016 (0.40)
0.008 (0.20)
0.400 (10.16)
TYP
0.100 (2.54) TYP
Surface Mount
8-Pin DIP – Land Pattern
0.390 (9.91)
0.370 (9.40)
0.070 (1.78)
PIN 1
ID.
0.060 (1.52)
0.270 (6.86)
0.250 (6.35)
0.100 (2.54)
0.295 (7.49)
0.415 (10.54)
0.030 (0.76)
0.300 (7.62)
TYP
0.070 (1.78)
0.045 (1.14)
0.020 (0.51)
MIN
0.016 (0.41)
0.008 (0.20)
0.045 [1.14]
0.022 (0.56)
0.016 (0.41)
0.315 (8.00)
MIN
0.100 (2.54)
TYP
0.405 (10.30)
MIN
Lead Coplanarity : 0.004 (0.10) MAX
Note:
All dimensions are in inches (millimeters)
7
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FOD3181 Rev. 1.0.3
Ordering Information
Example: FOD3181
X
X
Packaging Option
S:
Surface Mount Lead Bend
SD: Surface Mount, Tape and Reel
T:
V:
0.4" Lead Spacing
VDE Approved
TV: VDE Approved, 0.4" Lead Spacing
SV: VDE Approved, Surface Mount
SDV: VDEApproved,SurfaceMount,TapeandReel
Marking Information
1
2
6
3181
V XX YY B
5
3
4
Definitions
1
2
Fairchild logo
Device number
VDE mark (Note: Only appears on parts ordered with VDE
option – See order entry table)
3
4
5
6
Two digit year code, e.g., ‘03’
Two digit work week ranging from ‘01’ to ‘53’
Assembly package code
8
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FOD3181 Rev. 1.0.3
Carrier Tape Specifications
D0
P0
P2
t
K0
E
F
W
W1
P
D1
d
User Direction of Feed
Description
Symbol
Dimension in mm
16.0 ± 0.3
Tape Width
W
t
Tape Thickness
0.30 ± 0.05
Sprocket Hole Pitch
P
4.0 ± 0.1
0
Sprocket Hole Diameter
D
1.55 ± 0.05
0
Sprocket Hole Location
Pocket Location
E
1.75 ± 0.10
7.5 ± 0.1
4.0 ± 0.1
F
P
2
Pocket Pitch
P
12.0 ± 0.1
Pocket Dimensions
A
10.30 ±0.20
0
0
0
B
K
10.30 ±0.20
4.90 ±0.20
1.6 ± 0.1
Cover Tape Width
W
1
Cover Tape Thickness
d
0.1 max
10°
Max. Component Rotation or Tilt
Min. Bending Radius
R
30
9
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FOD3181 Rev. 1.0.3
Reflow Profile
245C, 10–30 s
300
250
200
150
100
50
260C peak
Time above 183C, <160 sec
Ramp up = 2–10C/sec
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
Time (Minute)
• Peak reflow temperature: 260C (package surface temperature)
• Time of temperature higher than 183C for 160 seconds or less
• One time soldering reflow is recommended
Output Power Derating
The maximum package power dissipation is 295mW. The pack-
age is limited to this level to ensure that under normal operating
conditions and over extended temperature range that the semi-
conductor junction temperatures do not exceed 125°C. The
package power is composed of three elements; the LED, static
operating power of the output IC, and the power dissipated in
the output power MOSFET transistors. The power rating of the
output IC is 250mW. This power is divided between the static
The output power is the product of the average output current
squared times the output transistor’s R
:
DS(ON)
P
= I
2 • R
O(AVG) DS(ON)
O(AVG)
The I
is the product of the duty factor times the peak
O(AVG)
current flowing in the output. The duty factor is the ratio of the
‘on’ time of the output load current divided by the period of the
operating frequency. An R
of 2.0Ω results in an average
DS(ON)
power of the integrated circuit, which is the product of I times
output load current of 200mA. The load duty factor is a ratio of
the average output time of the power MOSFET load circuit and
period of the driving frequency.
DD
the power supply voltage (V
– V ). The maximum IC static
DD
EE
output power is 150mW, (V
– V ) = 25V, I
= 6mA. This
DD
DD
EE
maximum condition is valid over the operational temperature
range of -40°C to +100°C. Under these maximum operating
conditions, the output of the power MOSFET is allowed to dissi-
pate 100mW of power.
The maximum permissible, operating frequency is determined
by the load supplied to the output at its resulting output pulse
width. Figure 13 shows an example of a 0.03µF gate to source
capacitance with a series resistance of 40Ω. This reactive load
results in a composite average pulse width of 1.5µs. Under this
load condition it is not necessary to derate the absolute maxi-
mum output current out to 250kHz.
The absolute maximum output power dissipation versus ambi-
ent temperature is shown in Figure 12. The output driver is
capable of supplying 100mW of output power over the tempera-
ture range from -40°C to 87°C. The output derates to 90mW at
the absolute maximum operating temperature of 100°C.
Fig. 13 Output Current Derating vs. Frequency
1.5
Fig. 12 Absolute Maximum Power Dissipation
vs. Ambient Temperature
TA = -40°C to 100°C
Load = .03µF +40Ω
0.15
VDD – VEE = Max. = 25V
V
DD = 20V
IDD = 6mA
1
0.5
0
IF = 12mA
LED Power = 45mW
LED Duty Factor = 50%
Output Pulse Width = 1.5µs
0.1
0.05
0
1
10
250
F – Frequency (kHz)
-40
-20
0
20
40
60
80 85
T
– Ambient Temperature (°C)
A
10
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FOD3181 Rev. 1.0.3
I
and I Test Conditions
OL
OH
This device is tested and specified when driving a complex
reactive load. The load consists of a capacitor in the series with
a current limiting resistor. The capacitor represents the gate to
source capacitance of a power MOSFET transistor. The test
load is a 0.03uF capacitor in series with an 40Ω resistor. The
LED test frequency is 10.0kHz with a 50% duty cycle. The com-
Figure 14 illustrates the relationship of the LED input drive
current and the device’s output voltage and sourcing and sink-
ing currents. The 0.03µF capacitor load represents the gate to
source capacitance of a very large power MOSFET transistor.
A single supply voltage of 20V is used in the evaluation.
Figure 15 shows the test schematic to evaluate the output volt-
bined I
and I output load current duty factor is 0.6% at the
OH
OL
age and sourcing and sinking capability of the device. The I
OH
test frequency.
and I
are measured at the peak of their respective current
OL
pulses.
I
= 8mA
F
OFF
LED
ON
20V
0
N-Channel (ON)
P-Channel (ON)
OUTPUT
I
= 0.5A
OH
Load
Current
I
= 0.5A
OL
1µs/Div
Figure 14. FOD 3180 Output Current and Output Voltage vs. LED Drive
Pulse
Generator
FOD3181
1
2
3
4
8
7
6
5
0.1µF
IOMON
VO
0.33µF
IFMON
22µF
40Ω
100Ω
100Ω
Figure 15.Test Schematic
11
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FOD3181 Rev. 1.0.3
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ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
FAST®
QS™
FASTr™
FPS™
FRFET™
QT Optoelectronics™ TinyPWM™
Quiet Series™
RapidConfigure™
RapidConnect™
µSerDes™
TinyPower™
TinyLogic®
TINYOPTO™
TruTranslation™
UHC®
Across the board. Around the world.™
The Power Franchise®
ScalarPump™
Programmable Active Droop™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER
ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or
system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its
safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I22
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