FJA4213OTU_NL [FAIRCHILD]
暂无描述;
| 型号： | FJA4213OTU_NL |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | 暂无描述 放大器 功率放大器 |
| 文件： | 总5页 (文件大小：94K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FJA4213
Audio Power Amplifier
•
•
•
•
High Current Capability I = -15A
High Power Dissipation
Wide S.O.A
C
Complement to FJA4313
TO-3P
1.Base 2.Collector 3.Emitter
1
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings T =25°C unless otherwise noted
C
Symbol
Parameter
Ratings
-230
Units
V
V
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
V
V
CBO
-230
CEO
EBO
-5
V
I
I
-15
A
C
Base Current
-1.5
A
B
P
Collector Dissipation (T =25°C)
130
W
°C
°C
C
C
T
T
Junction Temperature
Storage Temperature
150
J
- 50 ~ 150
STG
Electrical CharacteristicsT =25°C unless otherwise noted
C
Symbol
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Test Condition
I =-5mA, I =0
Min.
Typ.
Max.
Units
BV
-230
-230
-5
V
V
CBO
CEO
EBO
C
E
BV
BV
I =-10mA, R =∞
C BE
I =-5mA, I =0
V
E
C
I
I
V
=-230V, I =0
-5.0
-5.0
160
µA
µA
CBO
EBO
CB
EB
CE
CE
E
Emitter Cut-off Current
V
V
V
=-5V, I =0
C
h
h
* DC Current Gain
=-5V, I =-1A
55
35
FE1
FE2
C
DC Current Gain
=-5V, I =-7A
60
-0.4
-1.0
30
C
V
V
(sat)
(on)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
I =-8A, I =-0.8A
-3.0
-1.5
V
V
CE
C
B
V
=-5V, I =-7A
C
BE
CE
CE
CB
f
V
V
=-5V, I =-1A
MHz
pF
T
C
C
=-10V, f=1MHz
360
ob
* Pulse Test : PW=20us
*h Classification
FE
Classification
R
O
h
55 ~ 110
80 ~ 160
FE1
©2003 Fairchild Semiconductor Corporation
Rev. A, March 2003
Typical Characteristics
-20
IB = -900mA
IB = -800mA
IB = -1A
-18
-16
-14
-12
VCE = -5V
IB = -700mA
Tj = 125oC
Tj = 25oC
o
Tj = -25 C
100
10
1
IB = -300mA
IB = -200mA
-10
-8
IB = -100mA
-6
-4
-2
-0
-2
-4
-6
-8
-10
1
10
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
10000
1000
100
10000
1000
100
10
Ic=-10Ib
Ic=-10Ib
℃
℃
Tj=-25
Tj=25
℃
Tj=125
℃
Tj=125
℃
℃
Tj=25
Tj=-25
10
0.01
1
0.01
0.1
1
10
100
0.1
1
10
100
Ic[A], COLLECTOR CURRENT
Ic[A], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Figure 4. Collector-Emitter Saturation Voltage
-100
14
IC MAX. (Pulsed*)
12
10ms*
-10
VCE = 5V
IC MAX. (DC)
100ms*
10
8
DC
-1
6
4
-0.1
*SINGLE NONREPETITIVE
PULSE TC=25[oC]
2
-0.01
0
0.0
1
10
100
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
VBE[V], BASE-EMITTER VOLTAGE
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Base-Emitter On Voltage
Figure 6. Safe Operating Area
©2003 Fairchild Semiconductor Corporation
Rev. A, March 2003
Typical Characteristics
160
140
120
100
80
60
40
20
0
0
25
50
75
100
125
150
175
TC[oC], CASE TEMPERATURE
Figure 7. Power Derating
©2003 Fairchild Semiconductor Corporation
Rev. A, March 2003
Package Dimensions
TO-3P
15.60 ±0.20
4.80 ±0.20
13.60 ±0.20
9.60 ±0.20
+0.15
ø3.20 ±0.10
1.50
–0.05
2.00 ±0.20
3.00 ±0.20
1.00 ±0.20
1.40 ±0.20
+0.15
–0.05
0.60
5.45TYP
5.45TYP
[5.45 ±0.30
]
[5.45 ±0.30]
Dimensions in Millimeters
©2003 Fairchild Semiconductor Corporation
Rev. A, March 2003
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™
FACT™
ImpliedDisconnect™ PACMAN™
SPM™
ActiveArray™
Bottomless™
CoolFET™
CROSSVOLT™ FRFET™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
Across the board. Around the world.™
The Power Franchise™
FACT Quiet series™ ISOPLANAR™
POP™
Stealth™
FAST®
LittleFET™
MicroFET™
MicroPak™
Power247™
PowerTrench®
QFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
FASTr™
GlobalOptoisolator™ MICROWIRE™
QS™
GTO™
HiSeC™
I2C™
MSX™
MSXPro™
OCX™
QT Optoelectronics™ TinyLogic®
Quiet Series™
TruTranslation™
RapidConfigure™
RapidConnect™
UHC™
OCXPro™
OPTOLOGIC®
OPTOPLANAR™
UltraFET®
SILENT SWITCHER® VCX™
SMART START™
Programmable Active Droop™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2003 Fairchild Semiconductor Corporation
Rev. I2
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