FGPF7N60LSD [FAIRCHILD]
600V, 7A Low Saturation IGBT CO-PAK; 600V ，7A低饱和IGBT CO- PAK
| 型号： | FGPF7N60LSD |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | 600V, 7A Low Saturation IGBT CO-PAK |
| 文件： | 总9页 (文件大小：789K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
January 2006
FGPF7N60LSD
600V, 7A Low Saturation IGBT CO-PAK
Features
Description
•
•
•
Low saturation voltage : VCE(sat) = 1.4 V @ IC = 7A
Fairchild's Insulated Gate Bipolar Transistors (IGBTs) provides
very low conduction and switching losses.The device is
designed for Lamp applications where very low On-Voltage
Drop is a required feature.
High input impedance
CO-PAK, IGBT with FRD : trr = 50 ns (typ.)
Applications
Lamp applications (Hallogen Dimmer)
C
G
TO-220F
1.Gate 2.Collector 3.Emitter
E
Absolute Maximum Ratings
Symbol
Description
FGPF7N60LSD
Units
VCES
VGES
IC
Collector-Emitter Voltage
Gate-Emitter Voltage
600
± 20
14
V
V
A
A
A
A
Collector Current
@ TC = 25°C
Collector Current
@ TC = 100°C
7
ICM (1)
I F
Pulsed Collector Current
Diode Continous Forward Current
21
12
@ TC = 100°C
I FM
PD
Diode Maximum Forward Current
Maximum Power Dissipation
60
45
18
A
@ TC
=
25°C
W
W
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
@ TC = 100°C
TJ
-55 to +150
-55 to +150
300
°C
°C
°C
Tstg
TL
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
2.8
Units
RθJC
Thermal Resistance, Junction-to-Case
--
--
--
°C/W
°C/W
°C/W
(IGBT)
RθJC(DIODE)
RθJA
Thermal Resistance, Junction-to-Case
4.5
Thermal Resistance, Junction-to-Ambient (PCB Mount) (2)
62.5
Notes :
(2) Mounted on 1” squre PCB (FR4 or G-10 Material)
©2006 Fairchild Semiconductor Corporation
FGPF7N60LSD Rev. A
1
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Package Marking and Ordering Information
Max Qty
Packaging
Type
Device Marking
Device
Package
Qty per Tube
per Box
FGPF7N60LSD
FGPF7N60LSDTU
TO-220F
Rail /Tube
50ea
1,000ea
Electrical Characteristics of the IGBT
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVCES
Collector-Emitter Breakdown Voltage
VGE = 0V, IC = 250uA
VGE = 0V, IC = 1mA
600
--
--
--
--
V
∆BVCES
∆TJ
/
Temperature Coefficient of Breakdown]
Voltage
0.6
V/°C
ICES
IGES
Collector Cut-Off Current
G-E Leakage Current
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
--
--
--
--
250
uA
nA
± 100
On Characteristics
VGE(th)
G-E Threshold Voltage
IC = 7mA, VCE = VGE
5.0
--
6.5
1.4
8.0
2.0
V
V
VCE(sat)
Collector to Emitter
Saturation Voltage
IC = 7A,
VGE = 15V
IC = 7A,
VGE = 15V,
--
--
1.47
1.85
--
--
V
V
TC = 125°C
IC = 14 A,
VGE = 15V
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
--
--
--
--
--
--
pF
pF
pF
510
55
Output Capacitance
Reverse Transfer Capacitance
15
Switching Characteristics
td(on) Turn-On Delay Time
tr
td(off)
tf
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
ns
ns
ns
ns
uJ
mJ
mJ
ns
ns
ns
ns
uJ
mJ
mJ
120
44
Rise Time
Turn-Off Delay Time
Fall Time
535
3480
--
410
2320
0.27
3.8
VCC = 300 V, IC = 7A,
RG = 470Ω, VGE = 15V,
Inductive Load, TC = 25°C
Eon
Eoff
Ets
td(on)
tr
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
--
6.1
--
4.07
105
50
--
td(off)
tf
Turn-Off Delay Time
Fall Time
--
420
3745
0.22
5.94
VCC = 300 V, IC = 7 A,
RG =470Ω, VGE = 15V,
Inductive Load, TC = 125°C
--
Eon
Eoff
Ets
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
--
--
--
6.16
24
4
Qg
Total Gate Charge
--
--
--
--
nC
nC
nC
nH
36
6
VCE = 300 V, IC = 7A,
VGE = 15V
Qge
Qgc
Le
Gate-Emitter Charge
Gate-Collector Charge
Internal Emitter Inductance
10
7.5
15
--
Measured 5mm from PKG
2
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FGPF7N60LSD Rev. A
Electrical Characteristics of DIODE
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
VFM
Diode Forward Voltage
TC
TC = 100°C
TC 25°C
TC = 100°C
TC 25°C
TC = 100°C
TC 25°C
TC = 100°C
=
25°C
--
--
--
--
--
--
--
--
V
ns
A
1.65
1.58
50
2.1
--
IF = 7A
trr
Diode Reverse Recovery Time
=
65
--
58
Irr
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
=
2.5
3.75
--
IF = 7A
dI/dt = 200 A/µs
3.3
Qrr
=
nC
62.5
95.7
122
--
3
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FGPF7N60LSD Rev. A
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 2. Typical Saturation Voltage
Characteristics
40
40
TC = 25oC
Common Emitter
VGe = 15V
Tc = 25oC
Tc = 125oC
20V
12V
15V
30
30
20
20
10
0
10V
10
VGE= 8V
0
0
2
4
6
8
0
2
4
6
Collector-Em itter Voltage, VC E [V]
Collector-Emitter Voltage, VCE [V]
Figure 3. Typical Saturation Voltage
Characteristics
Figure 4. Load Current vs Frequency
2.2
15
Vcc = 300V
load Current : peak of square wave
14A
2.0
Duty cycle : 50%
Tc = 100oC
Power Dissipation = 9W
1.8
1.6
10
7A
1.4
5
0
Ic= 3.5A
1.2
1.0
0
25
50
75
100
125
150
0.1
1
10
100
1000
Case Temperature, TC (oC)
Frequency [kHz]
Figure 5. Saturation Voltage vs. Vge
Figure 6. Saturation Voltage vs. Vge
10
Common Emitter
TC = 25oC
10
Common Emitter
TC = 125oC
8
6
4
2
8
6
4
2
5
10
15
20
5
10
15
20
Gate - Emitter Voltage, VGE [V]
Gate - Emitter Voltage, VGE [V]
4
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FGPF7N60LSD Rev. A
Typical Performance Characteristics (Continued)
Figure 7. Capacitance Characteristics
Figure 8. Turn-On Characteristics vs. Gate
Resistance
1000
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
td(on)
800
Ciss
600
tr
100
Coss
Crss
400
200
0
Common Emitter
VCC = 300V, VGE = +/-15V
IC = 7A
TC = 25oC
TC = 125oC
1
10
Collector-Emitter Voltage, VCE [V]
10
100
Gate Resistance, RG [Ω]
1000
Figure 9. Turn-Off Characteristics vs.
Gate Resistance
Figure 10. Switching Loss vs. Gate Resistance
tf
1000
1000
Eoff
td(off)
Common Emitter
Common Emitter
VCC=300V,VGE=+/-15V
VCC = 300V, VGE = +/-15V
100
Eon
IC=7A
IC = 7A
100
TC = 25oC
TC = 125oC
TC=25oC
TC=125oC
100
1000
100
Gate Resistance, RG [Ω]
1000
Gate Resistance, RG [Ω]
Figure 11. Turn-On Characteristics vs.
Collector Current
Figure 12. Turn-Off Characteristics vs.
Collector Current
td(on)
1000
tf
tr
100
td(off)
Common Emitter
Common Emitter
VGE = +/-15V, RG = 470Ω
TC = 25oC
VGE = +/-15V, RG = 470Ω
TC = 25oC
100
TC = 125oC
TC = 125oC
4
6
8
10
12
14
16
4
6
8
10
12
14
16
Collector Current, IC [A]
Collector Current, IC [A]
5
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FGPF7N60LSD Rev. A
Typical Performance Characteristics (Continued)
Figure 13. Switching Loss vs. Collector Current
Figure 14. Gate Charge Characteristics
15
Common Emitter
RL = 43 ohm
TC = 25oC
200V
300V
Eoff
Vcc = 100V
10
1000
Eon
5
0
Common Emitter
VGE = +/-15V, RG = 470Ω
TC = 25oC
TC = 125oC
100
4
8
12
16
0
4
8
12
16
20
24
Gate Charge, Qg [nC]
Collector Current, IC [A]
Figure 15. SOA Characteristics
100
Ic MAX (Pulsed)
50µs
Ic MAX (Continuous)
10
1
100µs
1ms
DC Operation
Single Nonrepetitive
0.1
0.01
Pulse Tc = 25oC
Curves must be derated
linearly with increase
in temperature
0.1
1
10
100
1000
Collector - Emitter Voltage, VCE [V]
Figure 16. Transient Thermal Impedance of IGBT
10
0.5
1
0.2
0.1
Pdm
0.05
0.1
t1
0.02
0.01
t2
Duty factor D = t1 / t2
Peak Tj = Pdm
× Zthjc + T
C
single pulse
1E-4
0.01
1E-5
1E-3
0.01
0.1
1
10
Rectangular Pulse Duration [sec]
6
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FGPF7N60LSD Rev. A
Typical Performance Characteristics (Continued)
Figure 17. Forward Voltage Characteristics
Figure 18. Reverse Recovery Current
3.0
10
di/dt=200A/us
2.5
2.0
TC = 100oC
1
di/dt=100A/us
TC = 25oC
1.5
0.1
1.0
0.5
1.0
1.5
2.0
2.5
3.0
2
4
6
8
10
12
14
Forward Voltage , VF [V]
Forward Current , IF [A]
Figure 19. Stored Charge
Figure 20. Reverse Recovery Time
80
60
70
60
di/dt=100A/us
50
di/dt=200A/us
50
40
30
40
30
di/dt=200A/us
di/dt=100A/us
2
4
6
8
10
12
14
2
4
6
8
10
12
14
Forward Current , IF [A]
Forward Current , IF [A]
7
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FGPF7N60LSD Rev. A
Mechanical Dimensions
TO-220F
2.54 ±0.20
10.16 ±0.20
ø3.18 ±0.10
(7.00)
(0.70)
(1.00x45°)
MAX1.47
0.80 ±0.10
#1
0.35 ±0.10
+0.10
–0.05
0.50
2.76 ±0.20
2.54TYP
2.54TYP
[2.54 ±0.20]
[2.54 ±0.20]
9.40 ±0.20
Dimensions in Millimeters
8
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FGPF7N60LSD Rev. A
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or sustain life, or (c) whose failure to perform when properly used
in accordance with instructions for use provided in the labeling,
can be reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably expected
to cause the failure of the life support device or system, or to
affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I17
9
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FGPF7N60LSD Rev. A
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