FFPF10UP30STTU [FAIRCHILD]
10 A, 300 V, Ultrafast Diode; 10 A， 300 V超快二极管
| 型号： | FFPF10UP30STTU |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | 10 A, 300 V, Ultrafast Diode |
| 文件： | 总5页 (文件大小：1962K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
September 2005
FFPF10UP30ST
tm
Features
10 A, 300 V, Ultrafast Diode
• Ultrafast Recovery trr = 45 ns (@ IF = 10 A)
• Max Forward Voltage, VF = 1.4 V (@ TC = 25°C)
• Reverse Voltage, VRRM = 300 V
• Avalanche Energy Rated
The FFPF10UP30S is an ultrafast diode with low forward voltage
drop and rugged UIS capability. This device is intended for use
as freewheeling and clamping diodes in a variety of switching
power supplies and other power switching applications. It is
specially suited for use in switching power supplies and industrial
applicationa as welder and UPS application.
• RoHS Compliant
Applications
•
•
•
•
General Purpose
Switching Mode Power Supply
Free-Wheeling Diode for Motor Application
Power Switching Circuits
1
2
TO-220F
2. Anode
1
1. Cathode
2. Anode
1. Cathode
Absolute Maximum Ratings (per diode) T = 25°C unless otherwise noted
a
Symbol
VRRM
VRWM
VR
IF(AV)
IFSM
Parameter
Peak Repetitive Reverse Voltage
Value
Unit
V
300
300
300
10
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
Average Rectified Forward Current
@ TC = 125°C
A
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
100
A
TJ, TSTG
Operating Junction and Storage Temperature
- 65 to +150
°C
Thermal Characteristics
T = 25°C unless otherwise noted
a
Symbol
Parameter
Maximum Thermal Resistance, Junction to Case
Max
Unit
RθJC
4.0
°C/W
©2005 Fairchild Semiconductor Corporation
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FFPF10UP30ST Rev. A
Electrical Characteristics (per diode) T = 25°C unless otherwise noted
a
Symbol
VF *
Parameter
Min.
Typ.
Max.
Unit
IF = 10 A
IF = 10 A
T
C = 25 °C
-
-
-
-
1.4
1.2
V
V
TC = 150 °C
IR
VR = 300 V
VR = 300 V
T
C = 25 °C
-
-
-
-
100
500
μA
μA
*
TC = 150 °C
IF =1 A, di/dt = 100 A/μs, VCC = 30 V
IF =10 A, di/dt = 200 A/μs, VCC = 195 V
trr
T
C = 25 °C
-
-
-
-
35
45
ns
ns
TC = 25 °C
ta
tb
Qrr
TC = 25 °C
TC = 25 °C
-
-
-
11
13
20
-
-
-
ns
ns
nC
IF =10 A, di/dt = 200 A/μs, VCC = 195 V
T
C = 25 °C
WAVL
Avalanche Energy (L = 20 mH)
20
-
-
mJ
*Pulse Test: Pulse Width=300 μs, Duty Cycle=2%
©2005 Fairchild Semiconductor Corporation
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FFPF10UP30ST Rev. A
Typical Performance Characteristics
Figure 1. Typical Forward Voltage Drop
Figure 2. Typical Reverse Current
20
10
1
10
TC = 100oC
TC = 100oC
TC = 25oC
0.1
1
TC = 25oC
0.01
0.001
0.1
0.0
0.5
1.0
1.5
2.0
0
50
100
150
200
250
300
Forward Voltage , VF [V]
Reverse Voltage , VR [V]
Figure 3. Typical Junction Capacitance
Figure 4. Typical Reverse Recovery Time
400
36
Typical Capacitance
at 0V = 197. 2 pF
IF = 10A
Tc = 25oC
32
28
24
100
10
0.1
1
10
100
100
200
300
400
500
Reverse Voltage , VR [V]
di/dt [A/μs]
Figure 5. Typical Reverse Recovery Current
Figure 6. Forward Current Deration Curve
5
14
12
10
IF = 10A
TC = 25oC
4
3
2
1
0
8
DC
6
4
2
0
100
200
300
400
500
100
110
120
130
140
150
Case Temperature, TC [oC]
di/dt [A/μs]
3
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©2005 Fairchild Semiconductor Corporation
FFPF10UP30ST Rev. A
Package Demensions
TO-220F 2L
ø3.18 0.10
10.16 0.20
2.54 0.20
(0.70)
(1.00x45°)
2.76 0.20
MAX1.47
0.80 0.10
0.35 0.10
2.54TYP
2.54TYP
[2.54 0.20
]
[2.54 0.20]
+0.10
–0.05
0.50
9.40 0.20
Dimensions in Millimeters
©2005 Fairchild Semiconductor Corporation
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FFPF10UP30ST Rev. A
5
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©2005 Fairchild Semiconductor Corporation
FFPF10UP30ST Rev. A
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