FDZ372NZ [FAIRCHILD]
N-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET; N沟道1.5 V额定PowerTrench®薄WL- CSP MOSFET
| 型号： | FDZ372NZ |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | N-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET |
| 文件： | 总7页 (文件大小：297K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
March 2010
FDZ372NZ
N-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET
20 V, 4.7 A, 50 mΩ
Features
General Description
Designed on Fairchild's advanced 1.5 V PowerTrench® process
with state of the art "fine pitch" Thin WLCSP packaging process,
the FDZ372NZ minimizes both PCB space and rDS(on). This
advanced WLCSP MOSFET embodies a breakthrough in
packaging technology which enables the device to combine
excellent thermal transfer characteristics, ultra-low profile
Max rDS(on) = 50 mΩ at VGS = 4.5 V, ID = 2 A
Max rDS(on) = 60 mΩ at VGS = 2.5 V, ID = 2 A
Max rDS(on) = 72 mΩ at VGS = 1.8 V, ID = 1 A
Max rDS(on) = 93 mΩ at VGS = 1.5 V, ID = 1 A
packaging, low gate charge, and low rDS(on)
.
Occupies only 1.0 mm2 of PCB area. Less than 30% of the
area of 2x2 BGA
Applications
Ultra-thin package: less than 0.4 mm height when mounted
Battery management
Load switch
to PCB
HBM ESD protection level > 3200V (Note3)
RoHS Compliant
Battery protection
Pin 1
S
S
D
G
Pin 1
TOP
BOTTOM
WL-CSP 1.0X1.0 Thin
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
Parameter
Ratings
Units
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
20
V
V
±8
4.7
TA = 25 °C
(Note 1a)
ID
A
12
Power Dissipation
TA = 25 °C
TA = 25 °C
(Note 1a)
(Note 1b)
1.7
PD
W
Power Dissipation
0.5
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
(Note 1a)
(Note 1b)
75
°C/W
260
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
7 ’’
Tape Width
8 mm
Quantity
L
FDZ372NZ
WL-CSP 1.0x1.0 Thin
5000 units
1
©2010 Fairchild Semiconductor Corporation
FDZ372NZ Rev.C2
www.fairchildsemi.com
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 µA, VGS = 0 V
20
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
I
D = 250 µA, referenced to 25 °C
18
mV/°C
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
VDS = 16 V, VGS = 0 V
VGS = ±8 V, VDS = 0 V
1
µA
µA
±10
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 µA
0.4
0.7
-3
1
V
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
I
D = 250 µA, referenced to 25 °C
VGS = 4.5 V, ID = 2 A
GS = 2.5 V, ID = 2 A
mV/°C
40
45
53
63
57
22
50
60
72
93
81
V
rDS(on)
Drain to Source On Resistance
Forward Transconductance
VGS = 1.8 V, ID = 1 A
mΩ
VGS = 1.5 V, ID = 1 A
VGS = 4.5V, ID = 2 A, TJ = 125°C
VDS = 5 V, ID = 4.7 A
gFS
S
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
515
85
685
115
100
pF
pF
pF
VDS = 10 V, VGS = 0 V,
f = 1 MHz
Output Capacitance
Reverse Transfer Capacitance
65
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
6.2
3.6
26
12
10
42
12
9.8
ns
ns
VDD = 10 V, ID = 4.7 A
V
GS = 4.5 V, RGEN = 6 Ω
Turn-Off Delay Time
Fall Time
ns
5.6
7
ns
Qg
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
nC
nC
nC
VGS = 4.5 V, VDD = 10 V
D = 4.7 A
Qgs
Qgd
0.8
1.6
I
Drain-Source Diode Characteristics
VSD
trr
Source to Drain Diode Forward Voltage
Reverse Recovery Time
VGS = 0 V, IS = 1.4 A (Note 2)
0.7
11
1.2
20
10
V
ns
nC
IF = 4.7 A, di/dt = 100 A/µs
Qrr
Reverse Recovery Charge
2.6
Notes:
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
is guaranteed by design while R
is determined by
θJA
θJC
θCA
the user's board design.
b. 260 °C/W when mounted on a
minimum pad of 2 oz copper.
a. 75 °C/W when mounted on
a 1 in pad of 2 oz copper.
2
2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only as protection ESD. No gate overvoltage rating is implied.
©2010 Fairchild Semiconductor Corporation
FDZ372NZ Rev.C2
www.fairchildsemi.com
2
Typical Characteristics TJ = 25 °C unless otherwise noted
12
2.0
1.5
1.0
0.5
VGS = 4.5 V
VGS = 3 V
VGS = 1.5 V
VGS = 2.5 V
VGS = 1.8 V
VGS = 2 V
VGS = 2 V
8
VGS = 1.8 V
VGS = 1.5 V
4
VGS = 2.5 V
VGS = 3 V
VGS = 4.5 V
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
0
0.0
0.5
1.0
1.5
0
4
8
12
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
Figure2. N o r m a l i z e d O n - R e s i s ta n c e
vs Drain Current and Gate Voltage
1.6
200
ID = 2 A
GS = 4.5 V
PULSE DURATION = 80 µs
V
DUTY CYCLE = 0.5% MAX
ID = 2 A
1.4
1.2
1.0
0.8
0.6
150
100
50
TJ = 125 o
C
TJ = 25 o
C
0
0.0
-75 -50 -25
TJ
0
25 50 75 100 125 150
1.5
3.0
4.5
,
JUNCTION TEMPERATURE ( )
oC
VGS
, GATE TO SOURCE VOLTAGE (V)
F i gu re 3 . N orma li zed On - Res is ta nc e
vs Junction Temperature
Figure4. On-Resistance vs Gate to
Source Voltage
12
20
10
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
VGS = 0 V
VDS = 5 V
1
8
4
0
TJ = 150 o
C
TJ = 25 oC
TJ = 150 o
C
0.1
TJ = 25 o
C
0.01
TJ = -55 o
C
TJ = -55 o
C
0.001
0.5
1.0
1.5
2.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure6. Source to Drain Diode
Forward Voltage vs Source Current
©2010 Fairchild Semiconductor Corporation
FDZ372NZ Rev.C2
www.fairchildsemi.com
3
Typical Characteristics TJ = 25 °C unless otherwise noted
4.5
1000
100
10
ID = 4.7 A
VDD = 8 V
Ciss
3.0
VDD = 10 V
Coss
VDD = 12 V
1.5
Crss
f = 1 MHz
= 0 V
V
GS
0.0
20
0
2
4
6
8
0.01
0.1
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
Figure8. C a p a c i t a n c e v s D r a i n
to Source Voltage
20
10
10-1
VDS = 0 V
10-2
10-3
10-4
10-5
10-6
10-7
10-8
10-9
10-10
100 us
1 ms
1
0.1
TJ = 125 oC
THIS AREA IS
LIMITED BY r
10 ms
DS(on)
SINGLE PULSE
TJ = MAX RATED
RθJA = 260 oC/W
100 ms
1 s
10 s
TJ = 25 o
C
T
A = 25 oC
DC
0.01
0.01
0.1
1
10
100
0
3
6
9
12
15
VDS, DRAIN to SOURCE VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 10. Forward Bias Safe Operating Area
Figure 9. Gate Leakage Current vs
Gate to Source Voltage
200
100
SINGLE PULSE
RθJA = 260 oC/W
T
A = 25 o
C
10
1
0.4
10-4
10-3
10-2
10-1
t, PULSE WIDTH (sec)
1
10
100
1000
Figure 11. Single Pulse Maximum Power Dissipation
©2010 Fairchild Semiconductor Corporation
FDZ372NZ Rev.C2
www.fairchildsemi.com
4
Typical Characteristics TJ = 25 °C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.1
P
DM
0.05
0.02
0.01
t
1
0.01
t
2
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t /t
1 2
R
θJA = 260 oC/W
PEAK T = P
J
x Z
x R
+ T
DM
θJA
θJA A
0.001
10-4
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (sec)
1
10
100
1000
Figure 12. Junction-to-Ambient Transient Thermal Response Curve
©2010 Fairchild Semiconductor Corporation
FDZ372NZ Rev.C2
www.fairchildsemi.com
5
Dimensional Outline and Pad Layout
©2010 Fairchild Semiconductor Corporation
FDZ372NZ Rev.C2
www.fairchildsemi.com
6
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower™
Auto-SPM™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
F-PFS™
FRFET
Global Power Resource
Green FPS™
Green FPS™ e-Series™
Gmax™
Power-SPM™
PowerTrench
PowerXS™
®*
®
®
SM
®
The Power Franchise
®
Programmable Active Droop™
®
QFET
QS™
Quiet Series™
RapidConfigure™
TinyBoost™
TinyBuck™
TinyCalc™
GTO™
Current Transfer Logic™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
®
DEUXPEED
®
™
TinyLogic
Dual Cool™
TINYOPTO™
TinyPower™
TinyPWM™
®
EcoSPARK
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
EfficentMax™
ESBC™
®
MicroPak™
TinyWire™
MicroPak2™
MillerDrive™
MotionMax™
Motion-SPM™
OptiHiT™
SMART START™
TriFault Detect™
TRUECURRENT™*
µSerDes™
®
SPM
®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
Fairchild
®
Fairchild Semiconductor
FACT Quiet Series™
®
®
OPTOLOGIC
FACT
FAST
®
®
UHC
®
OPTOPLANAR
®
Ultra FRFET™
UniFET™
VCX™
FastvCore™
FETBench™
tm
®
Sync-Lock™
FlashWriter
FPS™
*
PDP SPM™
VisualMax™
XS™
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Preliminary
First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
No Identification Needed
Obsolete
Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I48
www.fairchildsemi.com
©2010 Fairchild Semiconductor Corporation
FDZ372NZ Rev.C2
相关型号：
FDZ375P_10
P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET -20 V, -3.7 A, 78 mΩ
FAIRCHILD
FDZ37PG1E-K1019
D Subminiature Connector, 37 Contact(s), Male, Solder Terminal, ROHS COMPLIANT
MOLEX
FDZ37PG1L-K1019
D Subminiature Connector, 37 Contact(s), Male, Solder Terminal, ROHS COMPLIANT
MOLEX
FDZ37PG1M-K1019
D Subminiature Connector, 37 Contact(s), Male, Solder Terminal, ROHS COMPLIANT
MOLEX
FDZ37PG1S-K1019
D Subminiature Connector, 37 Contact(s), Male, Solder Terminal, ROHS COMPLIANT
MOLEX
FDZ37PG1SL-K1019
CONNECTOR,D-SHELL,PCB MNT,RECEPT,37+37 CONTACTS,PIN,0.109 PITCH,PC TAIL TERMINAL,M3
MOLEX
FDZ37PG1SR-K1019
CONNECTOR,D-SHELL,PCB MNT,RECEPT,37+37 CONTACTS,PIN,0.109 PITCH,PC TAIL TERMINAL,M3
MOLEX
FDZ37PG2E-K1019
D Subminiature Connector, 37 Contact(s), Male, Solder Terminal, ROHS COMPLIANT
MOLEX
©2020 ICPDF网 联系我们和版权申明