FDS6912A-NB5E0121 [FAIRCHILD]
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET;
| 型号： | FDS6912A-NB5E0121 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
| 文件： | 总5页 (文件大小：120K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
July 2003
FDS6912A
Dual N-Channel Logic Level PowerTrenchÒ MOSFET
General Description
Features
These N-Channel Logic Level MOSFETs are produced
·
6 A, 30 V.
RDS(ON) = 28 mW @ VGS = 10 V
RDS(ON) = 35 mW @ VGS = 4.5 V
using
Fairchild
Semiconductor’s
advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
·
·
Fast switching speed
Low gate charge
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
·
High performance trench technology for extremely
low RDS(ON)
·
High power and current handling capability
D1
5
6
7
8
4
3
2
1
D1
D2
Q1
Q2
D2
G1
SO-8
S1
G2
S2
Pin 1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
Parameter
Drain-Source Voltage
Ratings
Units
30
V
V
A
VGSS
Gate-Source Voltage
± 20
ID
Drain Current – Continuous
– Pulsed
(Note 1a)
6
20
1.6
PD
W
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
1.0
0.9
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
°C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1)
78
40
RqJA
°C/W
°C/W
Thermal Resistance, Junction-to-Case
RqJC
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS6912A
FDS6912A
13’’
12mm
2500 units
FDS6912A Rev D(W)
Ó2003 Fairchild Semiconductor Corporation
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
30
V
VGS = 0 V,
ID = 250 mA
Breakdown Voltage Temperature
Coefficient
25
DBVDSS
DTJ
ID = 250 mA, Referenced to 25°C
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 24 V, VGS = 0 V
1
mA
10
VDS = 24 V, VGS = 0 V, TJ = 55°C
nA
IGSS
Gate–Source Leakage
VGS = ±20 V, VDS = 0 V
±100
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
1
1.9
3
V
VDS = VGS
,
ID = 250 mA
Gate Threshold Voltage
Temperature Coefficient
–4.5
DVGS(th)
DTJ
ID = 250 mA, Referenced to 25°C
mV/°C
RDS(on)
Static Drain–Source
On–Resistance
VGS = 10 V, ID = 6 A
VGS = 4.5 V, ID = 5 A
VGS = 10 V, ID = 6 A,TJ = 125°C
19
24
27
28
35
44
mW
ID(on)
gFS
On–State Drain Current
VGS = 10 V, VDS = 5 V
VDS = 10 V, ID = 6 A
20
A
S
Forward Transconductance
25
Dynamic Characteristics
Ciss
Coss
Crss
RG
Input Capacitance
575
145
65
pF
pF
pF
W
VDS = 15 V, V GS = 0 V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS = 15 mV, f = 1.0 MHz
2.1
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
8
5
16
10
37
6
ns
ns
VDD = 15 V, ID = 1 A,
VGS = 10 V, RGEN = 6 W
23
3
ns
ns
Qg
Qgs
Qgd
5.8
1.7
2.1
8.1
nC
nC
nC
VDS = 15 V, ID = 6 A,
VGS = 5 V
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
1.3
1.2
A
V
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = 1.3 A
(Note 2)
0.75
trr
Diode Reverse Recovery Time
IF = 6 A, diF/dt = 100 A/µs
20
10
nS
nC
Qrr
Diode Reverse Recovery Charge
Notes:
1. RqJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RqJC is guaranteed by design while RqCA is determined by the user's board design.
a) 78°C/W when
mounted on a 0.5in2
pad of 2 oz copper
b) 125°C/W when
mounted on a 0.02
in2 pad of 2 oz
copper
c) 135°C/W when mounted on a
minimum mounting pad.
Scale 1 : 1 on letter size paper
Pulse Test: Pulse Width < 300ms, Duty Cycle < 2.0%
FDS6912A Rev D(W)
Typical Characteristics
20
2.2
1.8
1.4
1
VGS = 10.0V
4.0V
3.5V
16
VGS = 3.5V
6.0V
4.5V
12
8
4.0
4.5V
5.0
6.0V
3.0V
10.0V
16
4
0.6
0
0
4
8
12
20
0
0.5
1
1.5
2
V
DS, DRAIN-SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
ID = 3A
ID = 6A
VGS = 10.0V
1.4
1.2
1
TA = 125oC
TA = 25oC
0.8
0.6
2
4
6
8
10
-50
-25
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
20
16
12
8
100
10
VGS = 0V
VDS = 5V
TA = 125oC
1
TA = 125oC
-55oC
25oC
0.1
25oC
0.01
0.001
0.0001
-55oC
4
0
0
0.2
0.4
0.6
0.8
1
1.2
1.5
2
2.5
3
3.5
4
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6912A Rev D(W)
Typical Characteristics
10
800
600
400
200
0
ID = 6A
f = 1MHz
VGS = 0 V
8
VDS = 10V
20V
Ciss
6
15V
4
2
0
Coss
Crss
0
5
10
15
20
0
2
4
6
8
10
12
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
50
40
30
20
10
0
SINGLE PULSE
RqJA = 135°C/W
RDS(ON) LIMIT
100ms
TA = 25°C
10
1ms
10ms
100ms
1s
1
10s
DC
VGS = 10V
0.1
0.01
SINGLE PULSE
R
qJA = 135oC/W
TA = 25oC
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RqJA(t) = r(t) * RqJA
0.2
R
qJA = 135°C/W
0.1
0.1
0.05
0.02
P(pk)
t1
0.01
t2
0.01
SINGLE PULSE
TJ - TA = P * RqJA(t)
Duty Cycle, D = t1 / t2
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6912A Rev D(W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Power247™
PowerTrench
QFET
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC
OPTOPLANAR™
PACMAN™
POP™
FACT Quiet Series™
FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
ActiveArray™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
EcoSPARK™
E2CMOSTM
EnSignaTM
FACT™
QS™
QT Optoelectronics™ TINYOPTO™
Quiet Series™
RapidConfigure™
RapidConnect™
TruTranslation™
UHC™
UltraFET
HiSeC™
I2C™
SILENT SWITCHER VCX™
SMART START™
SPM™
ImpliedDisconnect™
ISOPLANAR™
Across the board. Around the world.™
The Power Franchise™
ProgrammableActive Droop™
Stealth™
SuperSOT™-3
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVESTHE RIGHTTO MAKE CHANGES WITHOUTFURTHER NOTICETOANY
PRODUCTS HEREINTO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOTASSUMEANYLIABILITY
ARISING OUTOFTHEAPPLICATION OR USE OFANYPRODUCTOR CIRCUITDESCRIBED HEREIN; NEITHER DOES IT
CONVEYANYLICENSE UNDER ITS PATENTRIGHTS, NORTHE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I5
相关型号：
FDS6912AD84Z
Small Signal Field-Effect Transistor, 6A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
FAIRCHILD
FDS6912AL86Z
Small Signal Field-Effect Transistor, 6A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
FAIRCHILD
FDS6912AL99Z
Small Signal Field-Effect Transistor, 6A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
FAIRCHILD
FDS6912AS62Z
Small Signal Field-Effect Transistor, 6A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
FAIRCHILD
FDS6912A_NL
Small Signal Field-Effect Transistor, 6A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
FAIRCHILD
FDS6912D84Z
Power Field-Effect Transistor, 6A I(D), 30V, 0.028ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8
FAIRCHILD
FDS6912L86Z
Power Field-Effect Transistor, 6A I(D), 30V, 0.028ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明