FDS6676SD84Z [FAIRCHILD]
Small Signal Field-Effect Transistor, 14.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8;
| 型号： | FDS6676SD84Z |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Small Signal Field-Effect Transistor, 14.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 |
| 文件： | 总6页 (文件大小：179K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
February 2002
FDS6676S
30V N-Channel PowerTrench SyncFET™
General Description
Features
The FDS6676S is designed to replace a single SO-8
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
RDS(ON) and low gate charge. The FDS6676S includes
an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology.
•
14.5 A, 30 V.
RDS(ON) = 7.5 mΩ @ VGS = 10 V
RDS(ON) = 9.0 mΩ @ VGS = 4.5 V
•
•
•
Includes SyncFET Schottky body diode
Low gate charge (43nC typical)
High performance trench technology for extremely low
RDS(ON) and fast switching
Applications
•
High power and current handling capability
• DC/DC converter
• Motor drives
D
D
D
5
6
7
8
4
3
2
1
D
G
S
S
SO-8
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
30
V
VGSS
ID
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
V
A
16
14.5
50
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
2.5
1.2
1
W
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
°C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
RθJA
RθJC
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS6676S
FDS6676S
13’’
12mm
2500 units
FDS6676S Rev D (W)
2002 Fairchild Semiconductor Corporation
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V,
ID = 1 mA
30
V
∆BVDSS
Breakdown Voltage Temperature
21
ID = 1 mA, Referenced to 25°C
mV/°C
Coefficient
∆TJ
IDSS
IGSSF
IGSSR
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
VDS = 24 V,
VGS = 16 V,
VGS = 0 V
VDS = 0 V
500
100
–100
µA
nA
nA
VGS = –16 V, VDS = 0 V
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS
,
ID = 1 mA
1
1.4
2
V
∆VGS(th)
Gate Threshold Voltage
–3.8
ID = 1 mA, Referenced to 25°C
mV/°C
Temperature Coefficient
∆TJ
RDS(on)
Static Drain–Source
On–Resistance
VGS = 10 V,
ID = 14.5 A
5.5
6.0
8.0
7.5
9.0
12
mΩ
VGS = 4.5 V, ID = 13.2 A
VGS=10 V, ID =14.5A, TJ=125°C
ID(on)
gFS
On–State Drain Current
Forward Transconductance
VGS = 10 V,
VDS = 10 V,
VDS = 5 V
ID = 14.5 A
50
A
S
80
Dynamic Characteristics
Ciss
Coss
Crss
RG
Input Capacitance
4665
826
304
1.4
pF
pF
pF
Ω
VDS = 15 V,
f = 1.0 MHz
V GS = 0 V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS = 15 mV,
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
11
10
82
30
43
10
11
20
20
131
48
ns
ns
ns
VDD = 15 V,
VGS = 10 V,
ID = 1 A,
RGEN = 6 Ω
ns
Qg
Qgs
Qgd
60
nC
nC
nC
VDS = 15 V,
ID = 14.5 A,
V
GS = 5 V
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
3.5
0.7
A
V
VSD
Drain–Source Diode Forward
VGS = 0 V, IS = 3.5 A
VGS = 0 V, IS = 7 A
IF = 14.5A,
(Note 2)
(Note 2)
0.4
0.5
31
Voltage
trr
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
nS
nC
diF/dt = 300 A/µs
(Note 3)
Qrr
60
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 50°/W when
b) 105°/W when
c) 125°/W when mounted on a
minimum pad.
mounted on a 1 in2
pad of 2 oz copper
mounted on a .04 in2
pad of 2 oz copper
See “SyncFET Schottky body diode
characteristics” below
Scale 1 : 1 on letter size paper
Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS6676S Rev D (W)
Typical Characteristics
50
2.4
2.2
2
VGS = 10V
4.5V
3.0V
3.5V
2.5V
40
30
20
10
0
VGS = 2.5V
1.8
1.6
1.4
1.2
1
3.0V
3.5V
4.5V
10V
0.8
0
10
20
30
40
50
0
0.5
1
1.5
120
3
ID, DRAIN CURRENT (A)
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.016
1.6
1.4
1.2
1
ID = 14.5A
VGS =10V
ID = 7.3 A
0.014
0.012
0.01
TA = 125oC
0.008
0.006
0.004
0.8
0.6
TA = 25oC
-55
-35
-15
5
25
45
65
85
105
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
V
GS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
50
100
VGS = 0V
VDS = 5V
40
30
10
1
TA = 125oC
TA = 125oC
25oC
20
0.1
25oC
-55oC
10
-55oC
0.01
0.001
0
1
1.5
V
2
2.5
0
0.2
0.4
0.6
0.8
GS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6676S Rev D (W)
Typical Characteristics (continued)
6400
5600
4800
4000
3200
2400
1600
800
10
f = 1MHz
VGS = 0 V
ID = 14.5A
VDS = 10V
15V
CISS
8
6
4
2
0
20V
COSS
CRSS
0
0
5
10
15
20
25
30
0
20
40
Qg, GATE CHARGE (nC)
60
80
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
10
50
40
30
20
10
0
SINGLE PULSE
100us
R
θJA = 125°C/W
RDS(ON) LIMIT
1ms
TA = 25°C
10ms
100ms
1s
10s
1
DC
VGS = 10V
0.1
0.01
SINGLE PULSE
R
θJA = 125oC/W
T
A = 25oC
0.01
0.1
V
1
10
100
0.001
0.01
0.1
1
10
100
1000
DS, DRAIN-SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
R
R
θJC(t) = r(t) * RθJC
θJC = 125 °C/W
0.2
0.1
0.01
0.1
0.05
P(pk
0.02
0.01
t1
t2
TJ - TC = P * RθJC(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6676S Rev D (W)
Typical Characteristics (continued)
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in
parallel with PowerTrench MOSFET. This diode exhibits
similar characteristics to a discrete external Schottky
diode in parallel with a MOSFET. Figure 12 shows the
reverse recovery characteristic of the FDS6676S.
Schottky barrier diodes exhibit significant leakage at high
temperature and high reverse voltage. This will increase
the power in the device.
0.1
TA = 125oC
0.01
TA = 100oC
0.001
TA = 25oC
0.0001
0.00001
0
5
10
15
20
25
30
VDS, REVERSE VOLTAGE (V)
Figure 14. SyncFET body diode reverse
leakage versus drain-source voltage and
temperature.
TIME : 12.5ns/div
Figure 12. FDS6676S SyncFET body diode
reverse recovery characteristic.
For comparison purposes, Figure 13 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDS6676).
TIME : 12.5ns/div
Figure 13. Non-SyncFET (FDS6676) body
diode reverse recovery characteristic.
FDS6676S Rev D (W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
â
SMART START™
STAR*POWER™
Stealth™
VCX™
FAST
ACEx™
Bottomless™
CoolFET™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
FASTr™
FRFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
CROSSVOLT™
DenseTrench™
DOME™
POP™
Power247™
PowerTrenchâ
QFET™
EcoSPARK™
E2CMOSTM
TinyLogic™
QS™
EnSignaTM
TruTranslation™
UHC™
QT Optoelectronics™
Quiet Series™
SILENTSWITCHERâ
FACT™
FACT Quiet Series™
UltraFETâ
STAR*POWER is used under license
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DOES NOT ASSUME ANY LIABILITYARISING OUT OF THE APPLICATION OR USE OFANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
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As used herein:
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failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
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