FDS4141 [FAIRCHILD]
P-Channel PowerTrench㈢ MOSFET -40V, -10.8A, 13.0mヘ; P沟道MOSFET PowerTrench㈢ -40V ， -10.8A ， 13.0米ヘ
| 型号： | FDS4141 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | P-Channel PowerTrench㈢ MOSFET -40V, -10.8A, 13.0mヘ |
| 文件： | 总6页 (文件大小：217K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
November 2007
FDS4141
P-Channel PowerTrench® MOSFET
-40V, -10.8A, 13.0mΩ
Features
General Description
Max rDS(on) = 13.0mΩ at VGS = -10V, ID = -10.5A
Max rDS(on) = 19.0mΩ at VGS = -4.5V, ID = -8.4A
High performance trench technology for extremely low rDS(on)
RoHS Compliant
This P-Channel MOSFET has been produced using Fairchild
Semiconductor’s proprietary PowerTrench® technology to
deliver low rDS(on) and optimized BVDSS capability to offer
superior performance benefit in the applications and optimized
switching performance capability reducing power dissipation
losses in converter/inverter applications.
Applications
Control switch in synchronous & non-synchronous buck
Load switch
Inverter
D
D
G
S
S
S
D
D
5
6
7
8
4
3
2
1
D
D
D
D
G
SO-8
S
S
Pin 1
S
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
Parameter
Ratings
Units
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
-40
±20
V
V
-10.8
-36
ID
A
mJ
W
EAS
PD
Single Pulse Avalanche Energy
Power Dissipation
(Note 3)
294
TA = 25°C
TA = 25°C
(Note 1a)
(Note 1b)
5
Power Dissipation
2.5
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1)
25
50
°C/W
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
12mm
Quantity
FDS4141
FDS4141
SO-8
13’’
2500units
1
©2007 Fairchild Semiconductor Corporation
FDS4141 Rev.C
www.fairchildsemi.com
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = -250µA, VGS = 0V
-40
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = -250µA, referenced to 25°C
-33
mV/°C
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
VDS = -32V,
-1
µA
VGS = ±20V, VDS = 0V
±100
nA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = -250µA
-1.0
-1.6
5.3
-3.0
V
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = -250µA, referenced to 25°C
mV/°C
VGS = -10V, ID = -10.5A
VGS = -4.5V, ID = -8.4A
11.0
15.2
16.8
37
13.0
19.0
19.9
rDS(on)
gFS
Static Drain to Source On Resistance
Forward Transconductance
mΩ
VGS = -10V, ID = -10.5A, TJ= 125°C
VDD = -5V, ID = -10.5A
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
2005
355
190
5
2670
475
pF
pF
pF
Ω
VDS = -20V, VGS = 0V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
285
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
10
5
20
10
68
22
49
27
ns
ns
VDD = -20V, ID = -10.5A,
VGS = -10V, RGEN = 6Ω
Turn-Off Delay Time
Fall Time
42
12
35
19
6
ns
ns
Qg
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VGS = 0V to -10V
nC
nC
nC
nC
Qg
VGS = 0V to -5V
VDD = -20V,
ID = -10.5A
Qgs
Qgd
7
Drain-Source Diode Characteristics
VGS = 0V, IS = -10.5A
VGS = 0V, IS = -2.1A
(Note 2)
(Note 2)
-0.8
-0.7
26
-1.3
-1.2
42
VSD
Source to Drain Diode Forward Voltage
V
trr
Reverse Recovery Time
ns
IF = -10.5A, di/dt = 100A/µs
Qrr
Reverse Recovery Charge
14
26
nC
NOTES:
2
1. R
is determined with the device mounted on a 1in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
is guaranteed by design while R is determined by
θCA
θJA
θJC
the user's board design.
a) 50°C/W when mounted on a
1in pad of 2 oz copper.
b) 125°C/W when mounted on a
minimum pad.
2
2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3. UIL condition: Starting T = 25°C, L = 3mH, I = -14A, V = -40V, V = -10V.
J
AS
DD
GS
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©2007 Fairchild Semiconductor Corporation
FDS4141 Rev.C
2
Typical Characteristics TJ = 25°C unless otherwise noted
36
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
VGS = -3.5V
VGS = -4V
VGS = -3V
27
VGS = -4.5V
VGS = -10V
VGS = -3.5V
18
VGS = -3V
VGS = -4V
9
VGS = -4.5V
VGS = -10V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
0
0
1
2
3
0
9
18
27
36
-ID, DRAIN CURRENT(A)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
Figure2. N o r m a l i z e d O n - R e s i s ta n c e
vs Drain Current and Gate Voltage
50
1.8
ID = -10.5A
GS = -10V
PULSE DURATION = 80µs
ID = -10.5A
V
DUTY CYCLE = 0.5%MAX
1.6
1.4
1.2
1.0
0.8
0.6
40
30
TJ = 125oC
20
10
TJ = 25oC
0
2
4
6
8
10
-75 -50 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure4. On-Resistance vs Gate to
Source Voltage
F i gu re 3 . N orma li zed On - Res is ta nc e
vs Junction Temperature
100
36
VGS = 0V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
10
1
27
VDS = -5V
TJ = 150oC
TJ = 150oC
TJ = 25oC
18
0.1
TJ = 25oC
9
TJ = -55oC
0.01
0.001
TJ = -55oC
0
0
1
2
3
4
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure6. Source to Drain Diode
Forward Voltage vs Source Current
Figure 5. Transfer Characteristics
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©2007 Fairchild Semiconductor Corporation
FDS4141 Rev.C
3
Typical Characteristics TJ = 25°C unless otherwise noted
10
5000
1000
ID = -10.5A
Ciss
8
VDD = -20V
6
Coss
VDD = -15V
VDD = -25V
4
2
0
Crss
f = 1MHz
= 0V
V
GS
100
60
0
5
10
15
20
25
30
35
40
0.1
1
10
40
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Q , GATE CHARGE(nC)
g
Figure8. C a p a c i t a n c e v s D r a i n
to Source Voltage
Figure 7. Gate Charge Characteristics
12
9
20
10
VGS = -10V
6
TJ = 25oC
VGS = -4.5V
TJ = 125oC
3
R
θJA = 50oC/W
0
25
1
0.01
50
75
100
125
150
0.1
1
10
100 500
TA, AMBIENT TEMPERATURE (oC)
tAV, TIME IN AVALANCHE(ms)
Figure9. U n c l a m p e d I n d u c t i v e
Switching Capability
Figure10. Maximum Continuous Drain
Current vs Ambient Temperature
100
10
2000
1000
100
10
VGS = -10V
SINGLE PULSE
θJA = 125oC/W
TA = 25oC
R
1ms
10ms
100ms
1
THIS AREA IS
LIMITED BY r
DS(on)
SINGLE PULSE
TJ = MAX RATED
1s
0.1
RθJA = 125oC/W
TA = 25oC
10s
DC
1
0.5
0.01
10-4
10-3
10-2
t, PULSE WIDTH (sec)
10-1
1
10
100 1000
200
100
0.01
0.1
1
10
-VDS, DRAIN to SOURCE VOLTAGE (V)
Figure12. Single Pulse Maximum
Power Dissipation
Figure 11. Forward Bias Safe
Operating Area
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©2007 Fairchild Semiconductor Corporation
FDS4141 Rev.C
4
Typical Characteristics TJ = 25°C unless otherwise noted
2
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
P
DM
0.01
t
1
t
2
NOTES:
DUTY FACTOR: D = t /t
SINGLE PULSE
0.001
1
2
R
θJA = 125oC/W
PEAK T = P
J
x Z
x R
+ T
θJA A
DM
θJA
0.0001
10-4
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (sec)
1
10
100
1000
Figure 13. Transient Thermal Response Curve
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©2007 Fairchild Semiconductor Corporation
FDS4141 Rev.C
5
Preliminary Datasheet
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
This datasheet contains the design specifications for product
development. Specifications may change in any manner without notice.
Advance Information
Formative or In Design
This datasheet contains preliminary data; supplementary data will be pub-
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Preliminary
First Production
Full Production
Not In Production
This datasheet contains final specifications. Fairchild Semiconductor reserves
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Obsolete
This datasheet contains specifications on a product that has been discontin-
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mation only.
Rev. I31
6
©2007 Fairchild Semiconductor Corporation
FDS4141 Rev.C
www.fairchildsemi.com
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