BU406H [FAIRCHILD]

High Voltage Switching; 高压开关
BU406H
型号: BU406H
厂家: FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述:

High Voltage Switching
高压开关

晶体 开关 晶体管 功率双极晶体管 高压 局域网
文件: 总5页 (文件大小:50K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BU406/406H/408  
High Voltage Switching  
Use In Horizontal Deflection Output Stage  
TO-220  
1.Base 2.Collector 3.Emitter  
1
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
Collector Current (Pulse)  
Base Current  
400  
V
V
CBO  
CEO  
EBO  
200  
6
V
I
I
I
7
A
C
10  
A
CP  
B
4
60  
A
P
Collector Dissipation  
Junction Temperature  
Storage Temperature  
W
°C  
°C  
C
T
T
150  
J
- 55 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
Min.  
Max.  
Units  
I
Collector Cut-off Current  
V
V
V
= 400V, V = 0  
5
100  
1
mA  
µA  
mA  
CES  
CE  
CE  
CE  
BE  
= 250V, V = 0  
BE  
= 250V, V = 0 @ T =150°C  
BE  
C
I
Emitter Cut-off Current  
V
= 6V, I = 0  
1
mA  
EBO  
BE  
C
V
(sat)  
Collector-Emitter Saturation Voltage  
CE  
: BU406  
: BU406H  
: BU408  
I
I
I
= 5A, I = 0.5A  
1
1
1
V
V
V
C
C
C
B
= 5A, I = 0.8A  
B
= 6A, I = 1.2A  
B
V
(sat)  
Base-Emitter Saturation Voltage  
BE  
: BU406  
: BU406H  
: BU408  
I
I
I
= 5A, I = 0.5A  
1.2  
1.2  
1.5  
V
V
V
C
C
C
B
= 5A, I = 0.5A  
B
= 6A, I = 1.2A  
B
f
Current Gain Bandwidth Product  
V
= 10V, I = 0.5A  
10  
MHz  
T
CE  
C
t
Turn OFF Time  
: BU406  
OFF  
I
I
I
= 5A, I = 0.5A  
0.75  
0.4  
0.4  
µs  
µs  
µs  
C
C
C
B
: BU406H  
: BU408  
= 5A, I = 0.8A  
B
= 6A, I = 1.2A  
B
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  
Typical Characteristics  
5
4
3
2
1
0
1000  
100  
10  
VCE = 5V  
1
0
1
2
3
4
5
6
7
8
9
10  
1
10  
100  
1000  
10000  
VCE[V], COLLECTOR-EMITTER VOLTAGE  
IC[mA], COLLECTOR CURRENT  
Figure 1. Static Characteristic  
Figure 2. DC current Gain  
1000  
100  
10  
10000  
1000  
100  
f = 1MHz  
IC = 10 IB  
VBE(sat)  
VCE(sat)  
1
10  
1
10  
100  
1000  
10000  
1
10  
100  
IC[mA], COLLECTOR CURRENT  
VCB[V], COLLECTOR-BASE VOLTAGE  
Figure 3. Base-Emitter Saturation Voltage  
Collector-Emitter Saturation Voltage  
Figure 4. Collector Output Capacitance  
80  
70  
60  
50  
40  
30  
20  
10  
0
IC Max. (Pulsed)  
10  
IC Max. (Continuous)  
1
0
25  
50  
75  
100  
125  
150  
175  
200  
0.1  
1
10  
100  
TC[oC], CASE TEMPERATURE  
VCE[V], COLLECTOR-EMITTER VOLTAGE  
Figure 5. Safe Operating Area  
Figure 6. Power Derating  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  
Typical Characteristics(Continued)  
Figure 7. Static Characteristic  
Figure 8. DC current Gain  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  
Package Demensions  
TO-220  
4.50 ±0.20  
9.90 ±0.20  
(8.70)  
+0.10  
1.30  
–0.05  
ø3.60 ±0.10  
(45  
°
)
1.27 ±0.10  
1.52 ±0.10  
0.80 ±0.10  
+0.10  
–0.05  
0.50  
2.40 ±0.20  
2.54TYP  
2.54TYP  
[2.54 ±0.20  
]
[2.54 ±0.20]  
10.00 ±0.20  
Dimensions in Millimeters  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  
TRADEMARKS  
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is  
not intended to be an exhaustive list of all such trademarks.  
ACEx™  
HiSeC™  
SuperSOT™-8  
SyncFET™  
TinyLogic™  
UHC™  
Bottomless™  
CoolFET™  
CROSSVOLT™  
E2CMOS™  
FACT™  
ISOPLANAR™  
MICROWIRE™  
POP™  
PowerTrench®  
QFET™  
VCX™  
FACT Quiet Series™  
QS™  
FAST®  
Quiet Series™  
SuperSOT™-3  
SuperSOT™-6  
FASTr™  
GTO™  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY  
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY  
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;  
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR  
INTERNATIONAL.  
As used herein:  
1. Life support devices or systems are devices or systems  
which, (a) are intended for surgical implant into the body,  
or (b) support or sustain life, or (c) whose failure to perform  
when properly used in accordance with instructions for use  
provided in the labeling, can be reasonably expected to  
result in significant injury to the user.  
2. A critical component is any component of a life support  
device or system whose failure to perform can be  
reasonably expected to cause the failure of the life support  
device or system, or to affect its safety or effectiveness.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
Advance Information  
Formative or In  
Design  
This datasheet contains the design specifications for  
product development. Specifications may change in  
any manner without notice.  
Preliminary  
First Production  
This datasheet contains preliminary data, and  
supplementary data will be published at a later date.  
Fairchild Semiconductor reserves the right to make  
changes at any time without notice in order to improve  
design.  
No Identification Needed  
Obsolete  
Full Production  
This datasheet contains final specifications. Fairchild  
Semiconductor reserves the right to make changes at  
any time without notice in order to improve design.  
Not In Production  
This datasheet contains specifications on a product  
that has been discontinued by Fairchild semiconductor.  
The datasheet is printed for reference information only.  
©2000 Fairchild Semiconductor International  
Rev. E  

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