BF199 [FAIRCHILD]
NPN RF Transistor; NPN晶体管RF型号: | BF199 |
厂家: | FAIRCHILD SEMICONDUCTOR |
描述: | NPN RF Transistor |
文件: | 总3页 (文件大小:27K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BF199
NPN RF Transistor
TO-92
1. Collector 2. Emitter 3. Base
1
Absolute Maximum Ratings* T =25°C unless otherwise noted
C
Symbol
Parameter
Value
25
Units
V
V
V
V
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
CEO
40
V
CBO
EBO
4.0
V
I
- Continuous
50
mA
°C
C
T , T
Operating and Storage Junction Temperature Range
- 55 ~ 150
J
STG
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics T =25°C unless otherwise noted
C
Symbol
Parameter
Test Condition
Min.
Max.
Units
Off Characteristics
V
V
V
Collector-Emitter Breakdown Voltage *
Collector-Base BreakdownVoltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
I
I
I
= 1.0mA, I = 0
25
40
V
V
(BR)CEO
(BR)CBO
(BR)EBO
CES
C
C
E
B
= 100µA, I = 0
E
= 10µA, I = 0
4.0
V
C
I
V
= 30V, I = 0
50
nA
CE
E
On Characteristics
h
DC Current Gain
I
= 7.0mA, V = 10V
38
FE
C
CE
V
V
V
(sat)
(sat)
(on)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
I
I
I
= 10mA, I = 5.0mA
0.2
0.92
V
V
V
CE
BE
BE
C
C
C
B
= 10mA, I = 5.0mA
B
= 7.0mA, V = 10V
0.925
CE
Small Signal Characteristics
f
Current gain Bandwidth Product
I
= 7.0mA, V = 10V,
1100
0.4
MHz
pF
T
C
CE
f = 100MHz
C
Common-Emitter Ruerse
Transfer Capacitance
V
CB
= 10V, I = 0, f = 1.0MHz
re
E
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
Thermal Characteristics T =25°C unless otherwise noted
A
Symbol
Parameter
Max.
Units
P
Total Device Dissipation
Derate above 25°C
350
2.8
mW
mW/°C
D
R
R
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
125
357
°C/W
°C/W
θJC
θJA
©2002 Fairchild Semiconductor Corporation
Rev. A, September 2002
Package Dimensions
TO-92
+0.25
–0.15
4.58
0.46 ±0.10
+0.10
–0.05
1.27TYP
1.27TYP
0.38
[1.27 ±0.20
]
[1.27 ±0.20]
3.60 ±0.20
(R2.29)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. A, September 2002
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. I1
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