BD17610STU [FAIRCHILD]
PNP Epitaxial Silicon Transistor, TO-126 (SOT32) UNIFIED DRAWING (TSTU, TSSTU, STANDARD), 1920/RAIL;型号: | BD17610STU |
厂家: | FAIRCHILD SEMICONDUCTOR |
描述: | PNP Epitaxial Silicon Transistor, TO-126 (SOT32) UNIFIED DRAWING (TSTU, TSSTU, STANDARD), 1920/RAIL 局域网 开关 晶体管 |
文件: | 总4页 (文件大小:38K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BD176/178/180
Medium Power Linear and Switching
Applications
•
Complement to BD 175/177/179 respectively
TO-126
1. Emitter 2.Collector 3.Base
1
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings T =25°C unless otherwise noted
C
Symbol
Parameter
Value
Units
V
V
*Collector-Base Voltage
Collector-Emitter Voltage
: BD176
: BD178
: BD180
- 45
- 60
- 80
V
V
V
CBO
: BD176
: BD178
: BD180
- 45
- 60
- 80
V
V
V
CEO
V
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
- 5
- 3
V
A
EBO
I
I
C
- 7
A
C
P
Collector Dissipation (T =25°C)
30
W
C
C
R
R
Junction to Ambient
Junction to Case
70
°C/W
°C/W
°C
θja
θjc
8.5
T
Junction Temperature
Storage Temperature
150
J
T
- 65 ~ 150
°C
STG
Electrical Characteristics T =25°C unless otherwise noted
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max. Units
V
(sus)
* Collector-Emitter Sustaining Voltage
CEO
: BD176
: BD178
: BD180
I = - 100mA, I = 0
- 45
- 60
- 80
V
V
V
C
B
I
Collector Cut-off Current : BD176
V
V
V
= - 45V, I = 0
- 100
- 100
- 100
µA
µA
µA
CBO
CB
CB
CB
E
: BD178
: BD180
= - 60V, I = 0
E
= - 80V, I = 0
E
I
Emitter Cut-off Current
* DC Current Gain
V
= - 5V, I = 0
- 1
mA
EBO
EB
C
h
h
V
V
= - 2V, I = - 150mA
40
15
250
FE1
FE2
CE
CE
C
= - 2V, I = - 1A
C
V
V
(sat)
* Collector-Emitter Saturation Voltage
* Base-Emitter On Voltage
I = -1 A , I = - 0.1A
- 0.8
- 1.3
V
V
CE
C
B
(on)
V
= - 2V, I = -1 A
C
BE
CE
CE
f
Current Gain Bandwidth Product
V
= -10V, I = - 250mA
3
MHz
T
C
* Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed
h
Classificntion
FE
Classification
6
10
16
100 ~ 250
h
40 ~ 100
63 ~ 160
FE1
* Classification 16: Only BD 176
©2002 Fairchild Semiconductor Corporation
Rev. B1, October 2002
Typical Characteristics
1000
100
10
-10
VCE = -2V
IC = 10 IB
VBE(sat)
VCE(sat)
-1
-0.1
-0.01
-0.1
-1
-10
1
-0.01
-0.1
-1
-10
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
-10
40
35
30
25
20
15
10
5
IC MAX. (Pulsed)
10µs
IC MAX. (Continuous)
-1
-0.1
0
-1
-10
-100
0
25
50
75
100
125
150
175
TC[oC], CASE TEMPERATURE
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Safe Operating Area
Figure 4. Power Derating
©2002 Fairchild Semiconductor Corporation
Rev. B1, October 2002
Package Dimensions
TO-126
8.00 ±0.30
3.25 ±0.20
ø3.20 ±0.10
(1.00)
(0.50)
0.75 ±0.10
1.75 ±0.20
1.60 ±0.10
0.75 ±0.10
#1
+0.10
–0.05
0.50
2.28TYP
[2.28±0.20]
2.28TYP
[2.28±0.20]
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. B1, October 2002
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The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™
FACT™
ImpliedDisconnect™ PACMAN™
SPM™
ActiveArray™
Bottomless™
CoolFET™
CROSSVOLT™ FRFET™
DOME™
FACT Quiet series™ ISOPLANAR™
POP™
Stealth™
FAST®
LittleFET™
MicroFET™
MicroPak™
Power247™
PowerTrench®
QFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
FASTr™
GlobalOptoisolator™ MICROWIRE™
QS™
EcoSPARK™
E2CMOS™
EnSigna™
Across the board. Around the world.™
The Power Franchise™
GTO™
HiSeC™
I2C™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC®
OPTOPLANAR™
QT Optoelectronics™ TinyLogic™
Quiet Series™
TruTranslation™
RapidConfigure™
RapidConnect™
UHC™
UltraFET®
SILENT SWITCHER® VCX™
SMART START™
Programmable Active Droop™
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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. I1
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