BCW71S62Z [FAIRCHILD]
Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon;
| 型号： | BCW71S62Z |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon 放大器 光电二极管 晶体管 |
| 文件： | 总4页 (文件大小：61K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BCW71
C
E
SOT-23
Mark: K1
B
NPN General Purpose Amplifier
This device is designed for general purpose amplifier
applications at collector currents to 300 mA. Sourced from
Process 10.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
VCES
VEBO
IC
Collector-Emitter Voltage
45
50
V
V
3
Collector-Base Voltage
Emitter-Base Voltage
5.0
V
Collector Current - Continuous
Operating and Storage Junction Temperature Range
500
mA
-55 to +150
TJ, Tstg
°
C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
*BCW71
PD
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
350
2.8
357
mW
mW/°C
°C/W
RθJA
*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
1997 Fairchild Semiconductor Corporation
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown
IC = 1.0 mA, IB = 0
45
V
Voltage
V(BR)CBO
V(BR)EBO
ICBO
Collector-Base Breakdown Voltage
50
V
V
IC = 10 µA, IE = 0
IE = 10 µA, IC = 0
Emitter-Base Breakdown Voltage
Collector-Cutoff Current
5.0
VCB = 20 V, IE = 0
VCB = 20 V, IE = 0, TA = 100°C
100
10
µA
ON CHARACTERISTICS
hFE
DC Current Gain
IC = 2.0 mA, VCE = 5.0 V
110
0.6
220
Collector-Emitter Saturation Voltage IC = 10 mA, IB = 0.5 mA
0.25
V
V
V
VCE(sat)
VBE(sat)
VBE(on)
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
IC = 50 mA, IB = 2.5 mA
IC = 2.0 mA, VCE = 5.0 V
0.85
0.75
SMALL SIGNAL CHARACTERISTICS
Current Gain - Bandwidth Product
IC = 10 mA, VCE = 5.0 V,
f = 35 MHz
VCE = 10 V, IE = 0, f = 1.0 MHz
330
9.0
MHz
fT
Output Capacitance
Input Capacitance
Noise Figure
4.0
10
pF
pF
dB
Cobo
Cibo
NF
VEB = 0.5 V, IC = 0, f = 1.0 MHz
IC = 0.2 mA, VCE = 5.0 V,
RS = 2.0 kΩ, f = 1.0 kHz,
BW = 200 Hz
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
Collector-Emitter Saturation
Voltage vs Collector Current
400
300
200
100
0
0.4
0.3
0.2
0.1
Vce = 5V
125 °C
β = 10
25 °C
25 °C
- 40 °C
125 °C
- 40 °C
10
20 30
50
100
200 300 500
1
10
100
400
IC - COLLECTOR CURRENT (mA)
I C- COLLECTOR CURRENT (mA)
NPN General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Base-Emitter Saturation
Voltage vs Collector Current
Base-Emitter ON Voltage vs
Collector Current
1
1
0.8
0.6
0.4
0.2
- 40 °C
- 40 °C
0.8
25 °C
25 °C
0.6
125 °C
125 °C
0.4
V
= 5V
β = 10
CE
0.2
1
10
100
500
0.1
1
10
100
300
I C - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
Input and Output Capacitance
vs Reverse Voltage
Collector-Cutoff Current
vs Ambient Temperature
100
10
1
10
f = 1.0 MHz
VCB = 60V
3
Cib
1
Cob
0.1
25
0.1
50
75
100
125
150
0.1
1
10
100
TA - AMBIE NT TEMP ERATURE ( C)
V
ce
- COLLECTOR VOLTAGE (V)
°
Power Dissipation vs
Ambient Temperature
Switching Times vs
Collector Current
350
300
250
200
150
100
50
300
270
240
210
180
150
120
90
t
s
SOT-23
IB1 = IB2 = Ic / 10
V
= 10 V
cc
t
f
t
r
60
30
t
d
0
10
0
20
30
50
100
200 300
0
25
50
75
100
125
150
TEMPERATURE (oC)
IC - COLLECTOR CURRENT (mA)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
PowerTrench
QFET™
QS™
SyncFET™
TinyLogic™
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FASTr™
GlobalOptoisolator™
GTO™
Bottomless™
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DOME™
QT Optoelectronics™
VCX™
HiSeC™
Quiet Series™
SILENT SWITCHER
SMART START™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
ISOPLANAR™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
FAST
DISCLAIMER
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DOES NOTASSUMEANY LIABILITYARISING OUT OF THEAPPLICATION OR USE OFANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. G
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